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36th European Photovoltaic Solar Energy Conference and Exhibition; 251-254, Minimizing the resistivity of carrier-selective contacts (c) is crucial to achieve high-efficiency solar cells. In the case of silicon hetero-junction (SHJ) solar cells, a combination of thin-film silicon layers enables selective carrier collection by engineering the Fermi energy. However, this electrode structure also inherently yields potential barriers for carrier collection, which leads to resistive losses. Here, we present a rigorous modelling approach based on numerical simulations using Sentaurus TCAD. After demonstrating that our platform is capable of reasonably predicting experimentally-retrieved c values, we explain the transport phenomena involved for a wide range of contactstack combinations and their impact on the external parameters of interdigitated solar cells. We provide practical insights on how to minimize the contact resistivity in terms of the properties of the transparent conductive oxide and doped silicon thin film layers and thus increase the conversion efficiency of SHJ solar cells.