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This paper presents a receiver that covers both 26 GHz and 28 GHz frequency bands assigned for 5G applications, e.g. microwave backhauling, fixed wireless access and moving hotspot. It is fabricated in SiGe 130nm BiCMOS technology that provides a high frequency HBT with fT of 230 GHz. The device can manage a wide range of input signals thanks to its very high linearity and gain dynamic range. The receiver, measured on VQFN, exhibits 36.7±3 dB of conversion gain (I+jQ) with a noise figure of 4.2±0.6 dB, 56 dB of gain dynamic range, 18 dBc of image rejection, 13 dBm output intermodulation point (with a pick of 18 dB at 25 GHz), 5 dBm output-referred 1dB compression point over the entire 24–30 GHz RF band and 1 GHz of intermediate output frequency band. The power consumption amounts to 1.27 W with 2.5 and 3.3-V supply voltages

This paper presents a fully integrated and spur-free fractional frequency synthesizer based on a low noise 42.5-GHz SiGe quad-core VCO locked on a standard 40-MHz crystal unit. Consequently, optimal SNR is obtained for narrow bandwidth. Reference spurs are below −80 dBc thanks to a programmable digital loop filter in the range of 0.5 kHz to 50 kHz. The PLL architecture digitally controls the phase offset for beam forming and linearizes the VCO to ensure constant cut-off frequency and optimal SNR. Contrary to two-point modulation which requires calibration, radar modulation is simply added in one point after loop filter and before VCO linearizer. These blocks - XO, PLL and frequency doubler - are packaged in a BGA substrate.

This paper describes the analysis and the design of an integrated antenna on 0.13 µm SiGe BICMOS technology. A non-resonant dipole antenna integrated on SiGe is electromagnetically coupled to a radiating element reported on a printed circuit board (PCB) substrate. This integrated solution, also compatible with system in package (SIP) concept, provides significant improvements with respect to direct System On Chip (SoC) integration. The main objective of this SIP antenna lies on the optimization of integrated millimeter wave front-ends modules, considering the immediate antenna environment (especially the lossy substrate and technological dielectric/metallic levels), in order to achieve performances compatible with short range radar specifications at 79–81 GHz. One solution, using a RT/Rogers Duroid 6006 PCB (er = 6, thickness h = 127 µm), is presented, providing a 2.93 dBi gain, and 45% radiation efficiency antenna.

This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/μm2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details are given on HBT integration, reliability and models as well as on back-end devices models.

This paper presents a complete 2.5-V 77-GHz chipset for Doppler radar and imaging applications fabricated in SiGe HBT and SiGe BiCMOS technologies. The chipset includes a 123-mW single-chip receiver with 24-dB gain and an IP1 dB of -21.7 dBm at 76-GHz local oscillator (LO) and 77-GHz RF, 4.8-dB double-sideband noise figure at 76-GHz LO and 1-GHz IF, and worst case -98.5 dBc/Hz phase noise at 1-MHz offset over the entire voltage-controlled oscillator tuning range at room temperature. Monolithic spiral inductors and transformers result in a receiver core area of 450 mum times 280 mum. For integration of an entire 77-GHz transceiver, a power amplifier with 19-dB gain, +14.5-dBm saturated output power, and 15.7% power-added efficiency is demonstrated. Frequency divider topologies for 2.5-V operation are investigated and measurement results show a 105-GHz static frequency divider consuming 75 mW, and a 107-GHz Miller divider consuming 33 mW. Measurements on all circuits confirm operation up to 100 deg C. Low-power low-noise design techniques for each circuit block are discussed.

Nd1.67Sr0.33NiO4 polycrystals have been prepared by modified sol–gel method and subsequent annealing. X-ray diffraction analysis, electrical resistivity, magnetic susceptibility and thermal magnetisation have been measured. Rietveld analyses show a tetragonal or pseudo-tetragonal K2NiF4-type structure. The resistivity measurements present a change in conduction mode close to 230 K, which corresponds to the charge ordering temperature. Below this temperature, the material adopts a variable range hopping conduction mode; and above, the conduction follows adiabatic thermal activated mode. The magnetic measurements show paramagnetic behaviour in the range of 80–300 K. Moreover, the magnetic susceptibility data show a sign of the charge ordering transition about 230 K.

Relaxor ferroelectric 0.60Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.40PbTiO{sub 3} single crystal was synthesized by Bridgman method. The segregation along the length of this crystal was observed by various physico-chemical characterization techniques. First, we note the evolution of the crystalline structure along the length of the as-grown crystals. The tetragonality factor c/a increases from 1.013 to 1.020. This evolution has been correlated with the Ti content determination by flame atomic absorption spectrometry, and it is shown that this is due to the evolution of Ti concentration along the crucible. Furthermore, a continuous increase of the fraction of tetragonal phase with increasing Ti content was observed. Hence, we could compare the experimental data with a standard segregation model and therefore calculate the effective segregation coefficient k {sub eff} for this composition. This coefficient was found to be equal to 0.849. The variation of the titanium content along the ingot causes an inevitable fluctuation of the dielectric and piezoelectric properties of the single crystal. Due to the increase of Ti concentration, the Curie point was 186 deg. C at the bottom of the ingot and 222 deg. C at the top. The piezoelectric coefficient of oriented and poled samples varies from 1500more » to 250 pC/N.« less

This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-nm BiCMOS technology. The technical choices such as the selective epitaxial growth of the base and the use of an arsenic-doped monocrystalline emitter are presented and discussed with respect to BiCMOS performance objectives and integration constraints. DC and high-frequency device performances at room and cryogenic temperatures are given. HICUM model agreement with the measurements is also discussed. Finally, building blocks with state-of-the-art performances for a CMOS compatible technology are presented: A ring oscillator with a minimum stage delay of 4.4 ps and a 40-GHz low-noise amplifier with a noise figure of 3.9 dB and an associated gain of 9.2 dB were fabricated.

Novel 3D metal-oxide-metal capacitors for 60 GHz applications in a CMOS 45 nm process are proposed. Relatively high capacitances density of 3 fF/μm2 and quality factors from 3.2 to 10.2 at 60 GHz are measured. The study is validated up to 110 GHz for different capacitance values. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26029

This work presents a single-ended active mixer realized with a 0.13 /spl mu/m BiCMOS SiGeC heterojunction bipolar transistor (HBT) technology. This mixer is designed to be integrated in a superheterodyne receiver for 40 GHz wireless communication systems. Local oscillator (LO) and RF signals are directly applied to the base of the HBT through two coupled lines. The mixer provides a down-conversion from 42 GHz to 2 GHz. The mixer exhibits a power conversion gain better than 2.4 dB and a measured double-sideband noise figure less than 8.3 dB for P/sub LO/=3 dBm (power of the local oscillator) under a global power consumption lower than 9.5 mW. This architecture exhibits good linearity performance with a measured IP/sub 1dB/ of about -7 dBm and an IIP3 of +4 dBm. The linear dynamic range for a 2 GHz system bandwidth is approximately 65 dB for P/sub LO/=+2 dBm and T/sub 0/=290 K. The third order spurious free dynamic range is calculated to be better than 52 dB.

A 142GHz fully-integrated wireless chip-to-chip solution is demonstrated for short range and low power communication. Implemented in 0.13μm SiGe:C BiCMOS technology, the Tx and Rx silicon area including dipole antennas is 0.31mm2. The OOK transceiver achieves a data rate of 14Gbps for a communication distance of 0.6mm with an energy efficiency of 5.7pJ/bit.

A direct conversion demodulator at 60GHz based on Gilbert cells down-converter is presented in this paper. The OOK modulation allows using a single detector on receiver side to discriminate the 0 or 1 data. The conventional diode based detector presents conversion losses and obviously a high noise figure. Derived from the classic Gilbert cell mixer the demodulator presents a conversion gain of 9.7dB, a Noise Figure of 10dB for an input signal as low as −28dBm. This high sensitivity allows applications as chip to chip communications with high data rate. A data rate of 10Gbps has been measured without significant degradation with an efficiency of 2.1pJ/bit.

A millimeter-wave Power Amplifier (PA) implemented in a 65nm CMOS process with 8-metal layers and transistor f T /f MAX of 160/200 GHz is reported. The PA operates from a 1.2V supply voltage. A power gain of 13.4 dB, an output P1dB of 12.2 dBm with 7.6 % PAE and a saturated output power of 13.8 dBm at 58 GHz are measured. S 11 and S 22 are lower than 10 dB, which ensures an input and output matching to a 50 Ω impedance. These results are obtained thanks to accurate millimeter wave models for MOS and integrated microstrip lines used as passive components. The amplifier design takes electromigration constraints at 105°C into account. Excellent agreement between measurement and simulation results is observed.

This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors.

mm-Wave applications claim for accurate and reliable device models for their very high frequency operation range. This is not possible without any representative measurement of the intrinsic device performances especially HF small-signal measurements. In this paper we determine major parasitic contributions of regular HF test structures. Parasitic investigation goes from the probes down to the transistor. Original dummies are described and HF/DC measurements are presented and analyzed. Based on this limited set of structures a scalable de-embedding approach is described. To account for DC/HF parasitics, a sub-circuit is proposed for modeling purpose.

This work summarizes upcoming millimeter wave and high speed applications which will benefit from advanced SiGe BiCMOS process. The performance of a 230 GHz fT 280 GHz fmax process is detailed and future improvements are discussed. Intrinsic transistor performance for millimeter wave design has been compared with that of advanced 65 nm Low-Power CMOS. To help process comparison, design examples are also given and circuit optimizations to reach optimum noise figure are discussed. Recent realizations at 24 GHz and 77 GHz in SiGe BiCMOS are presented, demonstrating state of the art results on both receivers.

This work presents the performance of a 24-GHz transceiver for automotive short-range radar. Complying with the pulsed radar sensor requirements, this single-chip is the first silicon realization with this high-level of integration. The single-chip results were obtained at 24 GHz using a standard 0.13 mum BiCMOS SiGe 170 GHz fT featuring 1.7 V BVceo. This allows a receive path of 47 dB gain with 3 dBDSB noise figure providing a dynamic range of 31 dB. In the transmission section, 1-ns pulses modulated at 24 GHz are also obtained using an RF switch, which is able to deliver a continuous wave output power of 0 dBm.

This paper presents the potentialities of advanced BiCMOS and CMOS technologies for millimeter-wave applications. To begin, the target applications in these frequency bands are presented: from automotive cruise control radars to wireless links. Then, a large overview of the technological offer to address these applications is presented: SiGe BiCMOS, nanometer bulk and SOI CMOS technologies. This work focuses both on active and passive devices (BEOL) behavior to suit for design above 20 GHz. The paper continues with a presentation of several solutions for integrated circuits on the presented topic: front-end receiver blocks, transmission blocks and frequency synthesis solutions. An overview of state of the art silicon circuits is given. As a conclusion, perspectives regarding future challenges in terms of system integration and applications are discussed.

This paper describes a 60 GHz ultra-wideband (UWB) transceiver for indoor communication using 0.13 mum SiGe BiCMOS technology. The main advantage of this technology is the full integration of the analog and digital functions required for a high data rate wireless transmission at 60 GHz. The transmitter architecture is based on single-ended circuit topology. This paper describes the different functions needed to realize the transmitter (oscillator, switch and amplifier) and its performance achieved with the BiCMOS process. Single-pole single-throw (SPST) switch measurements are also detailed. It presents a ON/OFF transmission ratio about 40 dB at 60 GHz.

This work presents the performance of an integrated low noise amplifier (LNA) and Gilbert cell mixer integration and also a voltage controlled oscillator (VCO) performance. Differential topology was used to achieve the down converter. LNA measurements report 22.5 dB gain and about 3.2 dB noise figure at 24 GHz. Large signal results give IP1dB of -15 dBm. The mixer measurements show very interesting results of 15 dB conversion gain and 5 dBDSB noise figure. This allows a down converter of 31.8 dB gain and 3.5 dBDSB noise figure which provides a dynamic range of 37 dB. The design of these circuits was performed considering temperature and process variations. Nevertheless, results obtained at 24 GHz have never been published using a standard 0.17 mum BiCMOS SiGe 170 GHz fT featuring 1.7 V Bvceo.

This paper presents a 60 GHz ultra-wideband (UWB) transceiver for indoor communication using SiGe BiCMOS technology. To simplify the design, the transmitter architecture is based on single-ended functions. This work describes a single-pole single-throw (SPST) switch and a low noise amplifier (LNA) at 60 GHz. These two circuits were designed in SiGe BiCMOS 0.13 μm technology. The RF-switch presents a 40 dB ON/OFF ratio at 60 GHz and the LNA exhibits a 16 dB gain and a noise figure of 8 dB.

This paper presents a low area, low consumption, 40 GHz low noise amplifier (LNA), a down-converter and an oscillator, from which the performance of a 40 GHz wireless receiver can be estimated. The circuits were realized using a post-processing BCB above-IC technology and 0.13 mum SiGe:C BiCMOS HBT process, and their performance are compared with those obtained on circuits without post-processing. The 40 GHz LNA exhibits a noise figure of 2.2 dB with an associated gain of 17 dB and a DC power consumption of 20 mW. The measured double-sideband noise figure of the mixer is 4.7 dB with an associated conversion gain of 6.5 dB and a DC consumption of 4.8 mW. The 40 GHz oscillator has a phase noise of -107 dBc/Hz at 1 MHz offset from the carrier measured on a 50 Ohms load. The oscillator output power is 0 dBm for a DC consumption of 15 mW. Beyond these never published results in term of noise figure at 40 GHz, this post-processing technology gives the opportunity to determine the intrinsic noise figure value of the active device (HBT).

This paper presents the status of most advanced CMOS and BiCMOS technologies able to address very high-speed optical communications and millimeter-wave applications. The performance of active and passive devices available on bulk Si and high-resistivity SOI is reviewed and HF characteristics of state-of-the-art SiGe HBTs and MOSFETs are compared. The performance of building blocks designed in different CMOS and BiCMOS platforms are also presented. Finally, we conclude on the suitability of different Si technologies to address such high-frequency applications.

This paper presents a superheterodyne down-converter realized using SiGe:C BiCMOS HBT. Based on a single-ended architecture, the low noise amplifier (LNA), the fundamental oscillator and the mixer were first characterized separately and finally the down-converter. The down-converter exhibits conversion gain of 13 dB and NF/sub DSB/ of 7 dB, and the associated oscillator performs phase noise of -90 dBc/Hz at 1 MHz from the 40 GHz carrier frequency.

This work demonstrates the feasibility of a low area, low consumption, low noise amplifier (LNA) for 40 GHz wireless communications in SiGe:C BiCMOS Technology. The two stage LNA was achieved using a simple approach due to the micro-strip line characteristics and exhibits a gain of 23 dB and 3.7 dB noise figure at 40 GHz for a total DC power consumption less than 20 mW. Linearity measurements provide an IIP1 of -12 dBm and an IIP3 better than 14 dBm. This allows a dynamic range of 62 dB and a third order free spurious dynamic range around 51 dB.

In this letter, the microwave and noise performance of SiGe heterojunction bipolar transistors (HBTs) has been characterized when cooling down the temperature. It was found that SiGe HBTs (fabricated in the framework of BiCMOS process) exhibit a maximum oscillation frequency f/sub max/ of about 292 GHz at 78 K, which represents an increase of about 30% with the value measured at room temperature. The noise performance has also been characterized at cryogenic temperatures, using an original de-embedding approach. Then, using the Hawkin's noise model in conjunction with an accurate small signal equivalent extraction, the four noise parameters have been estimated. The noise figure with a 50 /spl Omega/ source impedance was measured to be equal to 1.5 dB at 40 GHz at 78 K, which is one of the lowest value reported for BiCMOS SiGe HBT in the millimeter-wave range.

This work presents a 1‐stage Low Noise Amplifier (LNA) realized using a 0.13μm SiGe:C Heterojunction Bipolar Transistor (HBT). Measured under cryogenic temperature this LNA exhibits a noise figure of 1.8dB at 78K and 40GHz which corresponds to 70% improvement compared with result achieved at room temperature. The associated gain stands higher than 5dB at 78K and 40GHz while it was better than 7.5dB at room temperature. This was explained by the passive components variation with the temperature which shifts the maximum gain around the 25GHz frequency range.