1. Amorphous-silicon gate-driver circuits of shared-node dual pull-down structure with overlapped output signals
- Author
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Binn Kim, Nam Wook Cho, Choi Seung Chan, Taewoong Moon, Kwon-Shik Park, Chun Min Doo, Hae Yeol Kim, Chang-Dong Kim, Ryoo Chang Il, Soo Young Yoon, In Byeong Kang, Sung Ki Kim, Yong Ho Jang, Cho Hyung Nyuck, and Sung Hak Jo
- Subjects
Amorphous silicon ,Materials science ,business.industry ,Controller (computing) ,Electrical engineering ,Hardware_PERFORMANCEANDRELIABILITY ,Atmospheric temperature range ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,Hardware_INTEGRATEDCIRCUITS ,Gate driver ,RGB color model ,Node (circuits) ,Electrical and Electronic Engineering ,business ,Electronic circuit ,Shift register - Abstract
— A novel gate-driver circuit using amorphous-silicon (a-Si) TFTs has been developed. The circuit has a shared-node dual pull-down AC (SDAC) structure with a common-node controller for two neighboring stages, resulting in a reduced number of TFTs. The overlapped clock signals widen the temperature range for stable operation due to the extended charging time of the inner nodes of the circuit. The accelerated lifetime was found to be over 1000 hours at 60°C with good bias-temperature-stress (BTS) characteristics. Accordingly, the a-Si gate-driver circuit was successfully integrated into a 14.1-in. XGA (1024 × RGB × 768) TFT-LCD panel having a single bank form.
- Published
- 2008