1. Picosecond pulse generation with 1.5 μm passively modelocked surface-emitting semiconductor laser
- Author
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Hoogland, S., Garnache, A., Sagnes, I., Paldus, B., Weingarten, K.J., Grange, R., Haiml, M., Keller, U., Tropper, A.C., Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Astrophysique de Marseille (LAM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Aix Marseille Université (AMU)-Centre National d'Études Spatiales [Toulouse] (CNES), and Aix Marseille Université (AMU)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[SPI.TRON]Engineering Sciences [physics]/Electronics - Abstract
International audience; The authors report the first demonstration of an optically pumped passively modelocked surface-emitting semiconductor laser operating in the 1.5 μm region. The modelocked laser emits pulses of 6.5 ps full width at half maximum duration with an average power of 13.5 mW at a fundamental repetition rate of 1.342 GHz. The peak power was 1.6 W.
- Published
- 2003