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Phonons confined in mechanical resonators can be coupled to a variety of quantum systems and are expected to be applied to hybrid quantum systems. Diamond surface acoustic wave (SAW) devices are capable of high efficiency in phonon interaction with color centers in diamond. The temperature dependence of the quality factor is crucial for inferring the governing mechanism of coupling efficiency between phonons and color centers in diamond. In this paper, we report on the temperature dependence of the quality factor of an AlN/diamond SAW device from room temperature to 5 K. The temperature dependence of the quality factor and resonant frequency suggests that the mechanism of SAW dissipation in the AlN/diamond SAW resonator at 5 GHz is the phonon-phonon scattering in the Akheiser region, and that further cooling can be expected to improve the quality factor. This result provides a crucial guideline for the future design of AlN/diamond SAW devices., 10 pages, 5 figures

Charge state instabilities have been a bottleneck for the implementation of solid-state spin systems and pose a major challenge to the development of spin-based quantum technologies. Here we investigate the stabilization of negatively charged nitrogen-vacancy (NV$^-$) centers in phosphorus-doped diamond at liquid helium temperatures. Photoionization of phosphorous donors in conjunction with charge diffusion at the nanoscale enhances NV$^0$ to NV$^-$ conversion and stabilizes the NV$^-$ charge state without the need for an additional repump laser. The phosphorus-assisted stabilization is explored and confirmed both with experiments and our theoretical model. Stable photoluminescence-excitation spectra are obtained for NV$^-$ centers created during the growth. The fluorescence is continuously recorded under resonant excitation to real-time monitor the charge state and the ionization and recombination rates are extracted from time traces. We find a linear laser power dependence of the recombination rate as opposed to the conventional quadratic dependence, which is attributed to the photo-ionization of phosphorus atoms., 8 pages, 4 figures

The coherent control of the orbital state is crucial for color centers in diamonds for realizing extremely low-power manipulation. Here, we propose the neutrally charged nitrogen-vacancy center, NV$^0$, as an ideal system for orbital control through electric fields. We estimate electric susceptibility in the ground state of NV$^0$ to be comparable to that in the excited state of NV$^-$. Also, we demonstrate coherent control of the orbital states of NV$^0$. The required power for orbital control is three orders of magnitude smaller than that for spin control, highlighting the potential for interfacing a superconducting qubit operated in a dilution refrigerator., Comment: 12 pages, 6 figures

Study on electron spin control method for high-sensitivity diamond quantum sensor, The 4th International Forum on Quantum Metrology and Sensing

We successfully fabricated the inversion-type p-channel metal-oxide-semiconductor field-effect transistor(MOSFET) on heteroepitaxially grown free-standing diamond using silicon-based substrates. The drain currented rain voltage (IdseVds) and drain current egate voltage (IdseVgs) characteristics were examined. The maximum drain current density and the peak field effect mobility (mFE) were around 0.35 mA/mm and 2.7 cm2 V 1s 1, which were lower than our reported results of the homoepitaxial diamond MOSFETs fabricated on high-pressure, high-temperature (HPHT) substrates. The interface state density (Dit) extracted from the subthreshold region was around 5.5 1012 cm 2eV 1, comparable to our reported results of the homoepitaxial diamond MOSFET. To further examine the reason for the low mFE, atomic force microscopy (AFM) measurements were performed for the n-type body of the heteroepitaxial diamond MOSFET, and we found that the surface roughness was much larger than our reported ones of the homoepitaxial diamond MOSFET. It can be deduced that the surface roughness would be one main limiting factor for the field effect mobility of the heteroepitaxial diamond MOSFET. The imperfect diamond heteroepitaxy would also degrade the field effect mobility. This work explores the potential of the inversion-type p-channel heteroepitaxial diamond MOSFETs, which would facilitate the practical application of diamond power devices.

平成30年度宇宙輸送シンポジウム（2019年1月17日-18日. 宇宙航空研究開発機構宇宙科学研究所（JAXA)(ISAS)）, 相模原市, 神奈川県, Space Transportation Symposium FY2018 (January 17-18, 2019. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS)), Sagamihara, Kanagawa Japan, 資料番号: SA6000136074, レポート番号: STEP-2018-018

We demonstrate electrical detection of the $^{14}$N nuclear spin coherence of NV centers at room temperature. Nuclear spins are candidates for quantum memories in quantum-information devices and quantum sensors, and hence the electrical detection of nuclear spin coherence is essential to develop and integrate such quantum devices. In the present study, we used a pulsed electrically detected electron-nuclear double resonance technique to measure the Rabi oscillations and coherence time ($T_2$) of $^{14}$N nuclear spins in NV centers at room temperature. We observed $T_2 \approx$ 0.9 ms at room temperature. Our results will pave the way for the development of novel electron- and nuclear-spin-based diamond quantum devices., 8 pages, 9 figures

制度:新 ; 文部省報告番号:甲1750号 ; 学位の種類:博士(工学) ; 授与年月日:2003/3/15 ; 早大学位記番号:新3513