1. Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
- Author
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Jock, R. M., Shankar, S., Tyryshkin, A. M., He, Jianhua, Eng, K., Childs, K. D., Tracy, L. A., Lilly, M. P., Carroll, M. S., and Lyon, S. A.
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences - Abstract
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible., Comment: 6 pages, 3 figures
- Published
- 2011
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