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Takuma Yuri,1,2 Nariyuki Mura,1,3,4 Kyosuke Hoshikawa,4 Hugo Giambini,2 Hiromi Fujii,1 Yoshiro Kiyoshige1,4 1Graduate School of Health Sciences, Yamagata Prefectural University of Health Sciences, Yamagata, Japan; 2Department of Biomedical Engineering, The University of Texas at San Antonio, San Antonio, TX, USA; 3Department of Orthopaedic Surgery, Yoshioka Hospital, Tendo, Japan; 4Department of Physical Therapy, Yamagata Prefectural University of Health Sciences, Yamagata, JapanCorrespondence: Takuma YuriGraduate School of Health Sciences, Yamagata Prefectural University of Health Sciences, 260 Kamiyanagi, Yamagata, 990-2212, JapanTel +81-23-686-6741Email d2167013@yachts.ac.jpPurpose: Ultrasound elastography has been used to evaluate the skeletal muscle stiffness as a biomarker for sarcopenia assessment. However, there is no consensus with respect to the size and location of the region of interest in assessing such fat infiltrated muscle. The objective of this study was to determine which cross-sectional area should be measured in torn disuse muscle with fat infiltration to accurately measure muscle activity using real-time tissue elastography (RTE).Methods: Twenty-seven patients, whose rotator cuff muscle with torn tendon was successfully repaired, were followed by programmed rehabilitation. RTE measurements of the supraspinatus muscle were obtained during muscle contraction before and one-year after surgery so that the activity value was defined as the difference between elastography measurements at rest and elastography measurements during contraction. Given that the patients with successfully repaired and completed rehabilitation showed an increased activity value, the sensitivity for three regions of interest; posterior portion of the anterior-middle subregion (AM-p), anterior region (AR), and whole cross-sectional area of the supraspinatus (whole) were compared with the number of patients showing an increase in activity values as sensitivity analysis.Results: The sensitivity showing an increase in activity values was 74.1% for the AM-p area, 70.4% for the AR area, and 81.5% for the whole area. Intraclass correlation coefficient1,3 was 0.87– 0.97 for the AM-p area, 0.88– 0.98 for the AR area and 0.92– 0.99 for the whole area.Conclusion: The whole cross-sectional area is suitable to measure muscle activity in muscle with fat infiltration. The results in this study will provide some beneficial information when ultrasound elastography is used for the assessment of sarcopenia muscle with fat infiltration.Keywords: ultrasound elastography, region of interest, sarcopenia, fat infiltration, supraspinatus muscle

A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. beta-Ga2O3 single crystals 25 mm in diameter were grown in platinum rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane. (C) 2016 Elsevier B.V. All rights reserved., Article, JOURNAL OF CRYSTAL GROWTH.447:36-41(2016)

Available online 3 July 2020, 50 mm-diameter Sn-doped beta-Ga2O3 crystals with growth orientation perpendicular to (001) plane were grown with the newly-developed resistance heating vertical Bridgeman furnace using platinum-rhodium alloy crucibles in ambient air. Weak low angle grain boundaries and several small grains were detected on the both-side mirror polished 50 mm-diameter (001) wafer, using high resolution refraction x-ray topography. However, no imperfections were observed over the whole wafer area when using crossed polarizer analysis. Measured values of both the full width at half maximum and the dislocation densities were widely distributed in the wafer, ranging from 10 to 50 arcsec and 100 to 2000/cm(2) respectively with no distinctive correlations among them. The Sndoped crystals with concentrations ranging from 5 x 10(17) to 5 x 10(18) atom/cm(3) could be grown by Sn-doping in a range from 0.05 to 0.1 mol%, and (001) oriented, 50 mm-diameter n-type oxide semiconductor wafers with a carrier density of 3.6 x 10(18)/cm(3), a mobility of 60 cm(2)/Vsec and a resistivity of 0.03 Omega.cm, were obtained from a 0.1 mol% Sn-doped crystal., Article, JOURNAL OF CRYSTAL GROWTH.546:125778(2020)

Available online 20 May 2020, Article, JOURNAL OF CRYSTAL GROWTH.545:125724(2020)

The growth of sapphire by the traditional vertical Bridgman (VB) method was studied by using various shapes of seed crystals and tungsten (W) crucibles shaped to match the seeds. Approximately 2-in. diameter, c-axis sapphire single crystals were reproducibly grown from three kinds of seed: thin, tapered and full diameter. Factors relating seed type to single-crystal growth are discussed, including the reproducibility of seeding processes, and the generation and elimination of low-angle grain boundaries (LAGBs). What was learned facilitated the subsequent growth of large-diameter, 3-, 4- and 6-in., c-axis single-crystal sapphires from full-diameter seeds., Article, JOURNAL OF CRYSTAL GROWTH. 395:80-89 (2014)

Towards improved fruit set efficiency using tomato genetic resources. 12. Solanaceae Conference SOL 2015