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Laser cooled atoms have proven transformative for precision metrology, playing a pivotal role in state-of-the-art clocks and interferometers, and having the potential to provide a step-change in our modern technological capabilities. To successfully explore their full potential, laser cooling platforms must be translated from the laboratory environment and into portable, compact quantum sensors for deployment in practical applications. This transition requires the amalgamation of a wide range of components and expertise if an unambiguously chip-scale cold atom sensor is to be realized. We present recent developments in cold-atom sensor miniaturization, focusing on key components that enable laser cooling on the chip-scale. The design, fabrication and impact of the components on sensor scalability and performance will be discussed with an outlook to the next generation of chip-scale cold atom devices., 29 pages, 16 figures

We demonstrate a tuneable, chip-scale wavelength reference to greatly reduce the complexity and volume of cold-atom sensors. A 1 mm optical path length micro-fabricated cell provides an atomic wavelength reference, with dynamic frequency control enabled by Zeeman shifting the atomic transition through the magnetic field generated by the printed circuit board (PCB) coils. The dynamic range of the laser frequency stabilization system is evaluated and used in conjunction with an improved generation of chip-scale cold atom platforms that traps 4 million 87Rb atoms. The scalability and component consolidation provide a key step forward in the miniaturization of cold atom sensors., Comment: 6 pages, 3 figures

High-Q microring resonators have applications in gyroscopes, frequency comb generation, and feedback systems to control narrow linewidth integrated lasers [1–3]. This paper demonstrates the highest Q values measured for microring resonators at 780 nm wavelength. These sub mm integrated cavities can be used to provide an error signal for locking a distributed feedback laser (DFB), Fig. 1(a), using the Pound-Drever-Hall (PDH) method. High stability DFBs can also be achieved using a micro-electro-mechanical system (MEMS) cell containing 87 Rb vapour and taking advantage of the absorption line at 780.24 nm. This provides an absolute reference for locking the laser but only to the 87 Rb transition wavelengths. The microring resonator can be tailor made for any wavelength but is susceptible to thermal effects; this could in part be overcome using a top cladding with a thermo-optic coefficient that counteracts that of the waveguide core.

780 nm wavelength distributed feedback lasers have been integrated onto a Si3N4 photonic platform on a Si substrate and coupled into waveguides for laser locking to either a ring resonator or rubidium vacuum cell.

Silicon offers a compelling platform for developing hybrid architectures that exploit novel functionalities. Heteroepitaxial growth of Ge on Si is a prominent approach to tailor material properties to achieve this goal. However, designing Ge-based heterostructures, which fulfill ever-demanding photonic and electronic applications, demands crucial control over the unavoidable non-radiative recombinations occurring at free surfaces and growth defects like dislocations. Yet the mitigation over such parasitic optical activity remains an open issue. Here we tackle this problem and demonstrate a more than 2 orders of magnitude photoluminescence (PL) enhancement achieved via confinement of threading dislocations and carefully controlled surface passivation of micron-scale Ge on Si crystals. By spectrally resolving interband and dislocation-related PL, we underpin the role played by dislocations in limiting the radiative emission, and we identify effective solutions based upon bandgap engineering to further boosting light emission efficiency. Noticeably, by combining steady state and time-resolved PL we disentangle non-radiative channels due to free surfaces and dislocations, eventually shining light on their relative impact at various temperature regimes. These findings have the potential of being beneficial for numerous applications of Ge-based heterostructures, in particular for moving forward their exploitation within the fast-growing field of Si-photonics.

Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into microdisks and strained using silicon nitride stressors. The strained disks are measured to be tensile by Raman spectroscopy, and demonstrate direct bandgap emission in the 3-5 μm gas sensing window.

Measurements recorded over monitoring networks often possess spatial and temporal correlation inducing redundancies in the information provided. For river water quality monitoring in particular, flow-connected sites may likely provide similar information. This paper proposes a novel approach to principal components analysis to investigate reducing dimensionality for spatiotemporal flow-connected network data in order to identify common spatiotemporal patterns. The method is illustrated using monthly observations of total oxidized nitrogen for the Trent catchment area in England. Common patterns are revealed that are hidden when the river network structure and temporal correlation are not accounted for. Such patterns provide valuable information for the design of future sampling strategies.

Measurements recorded over monitoring networks often possess spatial and temporal correlation inducing redundancies in the information provided. For river water quality monitoring in particular, flow-connected sites may likely provide similar information. This paper proposes a novel approach to principal components analysis to investigate reducing dimensionality for spatiotemporal flow-connected network data in order to identify common spatiotemporal patterns. The method is illustrated using monthly observations of total oxidized nitrogen for the Trent catchment area in England. Common patterns are revealed that are hidden when the river network structure and temporal correlation are not accounted for. Such patterns provide valuable information for the design of future sampling strategies.

Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands.

Background Treatment burden can be defined as the self-care practices that patients with chronic illness must perform to respond to the requirements of their healthcare providers, as well as the impact that these practices have on patient functioning and well being. Increasing levels of treatment burden may lead to suboptimal adherence and negative outcomes. Systematic review of the qualitative literature is a useful method for exploring the patient experience of care, in this case the experience of treatment burden. There is no consensus on methods for qualitative systematic review. This paper describes the methodology used for qualitative systematic reviews of the treatment burdens identified in three different common chronic conditions, using stroke as our exemplar. \ud Methods Qualitative studies in peer reviewed journals seeking to understand the patient experience of stroke management were sought. Limitations of English language and year of publication 2000 onwards were set. An exhaustive search strategy was employed, consisting of a scoping search, database searches (Scopus, CINAHL, Embase, Medline and PsycINFO) and reference, footnote and citation searching. Papers were screened, data extracted, quality appraised and analysed by two individuals, with a third party for disagreements. Data analysis was carried out using a coding framework underpinned by Normalization Process Theory (NPT). \ud Results A total of 4364 papers were identified, 54 were included in the review. Of these, 51 (94%) were retrieved from our database search. Methodological issues included: creating an appropriate search strategy; investigating a topic not previously conceptualised; sorting through irrelevant data within papers; the quality appraisal of qualitative research; and the use of NPT as a novel method of data analysis, shown to be a useful method for the purposes of this review. \ud Conclusion The creation of our search strategy may be of particular interest to other researchers carrying out synthesis of qualitative studies. Importantly, the successful use of NPT to inform a coding frame for data analysis involving qualitative data that describes processes relating to self management highlights the potential of a new method for analyses of qualitative data within systematic reviews.

The waveguide losses from a range of surface plasmon and double metal waveguides for Ge/Si1−xGe x THz quantum cascade laser gain media are investigated at 4.79 THz (62.6 μm wavelength). Double metal waveguides demonstrate lower losses than surface plasmonic guiding with minimum losses for a 10 μm thick active gain region with silver metal of 21 cm−1 at 300 K reducing to 14.5 cm−1 at 10 K. Losses for silicon foundry compatible metals including Al and Cu are also provided for comparison and to provide a guide for gain requirements to enable lasers to be fabricated in commercial silicon foundries. To allow these losses to be calculated for a range of designs, the complex refractive index of a range of nominally undoped Si1−xGe x with x = 0.7, 0.8 and 0.9 and doped Ge heterolayers were extracted from Fourier transform infrared spectroscopy measurements between 0.1 and 10 THz and from 300 K down to 10 K. The results demonstrate losses comparable to similar designs of GaAs/AlGaAs quantum cascade laser plasmon waveguides indicating that a gain threshold of 15.1 cm−1 and 23.8 cm−1 are required to produce a 4.79 THz Ge/SiGe THz laser at 10 K and 300 K, respectively, for 2 mm long double metal waveguide quantum cascade lasers with facet coatings.

We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.