1. Response of a Commercial 0.25 um Thin-Film Silicon-on-Sapphire CMOS Technology to Total Ionizing Dose
- Author
-
King, Michael P., Gong, Datao, Liu, Chonghan, Liu, Tiankuan, Xiang, Annie C., Ye, Jinbo, Schrimpf, Ronald D., Reed, Robert A., Alles, Michael L., and Fleetwood, Daniel M.
- Subjects
Physics - Instrumentation and Detectors ,Hardware_INTEGRATEDCIRCUITS ,FOS: Physical sciences ,Hardware_PERFORMANCEANDRELIABILITY ,Instrumentation and Detectors (physics.ins-det) - Abstract
The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change of less than 170 mV and leakage current change of less than 1 nA for individual nMOSFET and pMOSFET devices at a total dose of 100 krad(SiO2). The increase in power supply current at the circuit level was less than 5%, consistent with the small change in off-state transistor leakage current. The technology exhibits good characteristics for use in the electronics of the ATLAS experiment at the Large Hadron Collider., Comment: 5 pages, 5 figures
- Published
- 2022
- Full Text
- View/download PDF