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While halide perovskites attract significant academic attention, examples of at-scale industrial production are still sparse. In this perspective, we review practical challenges hindering the commercialization of halide perovskites, and discuss how machine-learning (ML) tools could help: (1) active-learning algorithms that blend institutional knowledge and human expertise could help stabilize and rapidly update baseline manufacturing processes; (2) ML-powered metrology, including computer imaging, could help narrow the performance gap between large- and small-area devices; and (3) inference methods could help accelerate root-cause analysis by reconciling multiple data streams and simulations, focusing research effort on areas with highest probability for improvement. We conclude that to satisfy many of these challenges, incremental -- not radical -- adaptations of existing ML and statistical methods are needed. We identify resources to help develop in-house data-science talent, and propose how industry-academic partnerships could help adapt "ready-now" ML tools to specific industry needs, further improve process control by revealing underlying mechanisms, and develop "gamechanger" discovery-oriented algorithms to better navigate vast materials combination spaces and the literature., 21 pages, 2 figures

Perovskite solar cells have drawn much attention recently owing to their world-record-setting photovoltaic performances, whereas their practicality is still limited by the structural instability that often arises from ion migration and defect formation. Despite the general understanding that ion instability is a primary cause for degradation, there is no observation of structural transformation at the atomistic scale. Such observation is crucial to understand how instabilities are induced by external perturbations such as illumination or electrical bias, allowing researchers to devise effective strategies to mitigate them. Here, we designed an in situ transmission electron microscopy setup to enable real-time observation of amorphization in perovskite materials under electrical biasing. To reverse the device performance degradation due to such structural changes, the samples were heated at 50 °C and were found to recrystallize, effectively regaining their performance losses. This work presents vital insights on understanding ion-migration phenomena and addressing instability challenges of perovskite optoelectronics.

Perovskite solar cells have drawn much attention in recent years, owing to its world-record setting photovoltaic performances. Despite its promising use in tandem applications and flexible devices, its practicality is still limited by its structural instability often arising from ion migration and defect formation. While it is generally understood that ion instability is a primary cause for degradation, there is still a lack of direct evidence of structural transformation at the atomistic scale. Such an understanding is crucial to evaluate and pin-point how such instabilities are induced relative to external perturbations such as illumination or electrical bias with time, allowing researchers to devise effective strategies to mitigate them. Here, we designed an in-situ TEM setup to enable real-time observation of amorphization in double cation mixed perovskite materials under electrical biasing at 1 V. It is found that amorphization occurs along the (001) and (002) planes, which represents the observation of in-situ facet-dependent amorphization of a perovskite crystal. To reverse the degradation, the samples were heated at 50 oC and was found to recrystallize, effectively regaining its performance losses. This work is vital toward understanding fundamental ion-migration phenomena and address instability challenges of perovskite optoelectronics.

Using nanoprobe X-ray diffraction microscopy, we investigate the relationship between residual strains from crystal growth in CsPbBr$_3$ thin film crystals, their stability, and local bandgap. We find that out-of-plane compressive strain that arises from cooldown from crystallization is detrimental to material stability under X-ray irradiation. We also find that the optical photoluminescence red shifts as a result of the out-of-plane compressive strain. The sensitivity of bandgap to strain suggests possible applications such as stress-sensitive sensors. Mosaicity, the formation of small misorientations in neighboring crystalline domains we observe in some CsPbBr$_3$ single crystals, indicates the significant variations in crystal quality that can occur even in single-crystal halide perovskites. The nano-diffraction results suggest that reducing local strains is a necessary path to enhance the stability of perovskite optoelectronic materials and devices from light-emitting diodes to high-energy detectors.

Perovskite solar cells have shown remarkable efficiencies beyond 22%, through organic and inorganic cation alloying. However, the role of alkali-metal cations is not well-understood. By using synchrotron-based nano-X-ray fluorescence and complementary measurements, we show that when adding RbI and/or CsI the halide distribution becomes homogenous. This homogenization translates into long-lived charge carrier decays, spatially homogenous carrier dynamics visualized by ultrafast microscopy, as well as improved photovoltaic device performance. We find that Rb and K phase-segregate in highly concentrated aggregates. Synchrotron-based X-ray-beam-induced current and electron-beam-induced current of solar cells show that Rb clusters do not contribute to the current and are recombination active. Our findings bring light to the beneficial effects of alkali metal halides in perovskites, and point at areas of weakness in the elemental composition of these complex perovskites, paving the way to improved performance in this rapidly growing family of materials for solar cell applications., Comment: updated author metadata

Solar cells based on n-type multicrystalline silicon (mc-Si) wafers are a promising path to reduce the cost per kWh of photovoltaics; however, the full potential of the material and how to optimally process it are still unknown. Process optimization requires knowledge of the response of the metal-silicide precipitate distribution to processing, which has yet to be directly measured and quantified. To supply this missing piece, we use synchrotron-based micro-X-ray fluorescence (μ-XRF) to quantitatively map >250 metal-rich particles in n-type mc-Si wafers before and after phosphorus diffusion gettering (PDG). We find that 820 °C PDG is sufficient to remove precipitates of fast-diffusing impurities and that 920 °C PDG can eliminate precipitated Fe to below the detection limit of μ-XRF. Thus, the evolution of precipitated metal impurities during PDG is observed to be similar for n- and p-type mc-Si, an observation consistent with calculations of the driving forces for precipitate dissolution and segregation gettering. Measurements show that minority-carrier lifetime increases with increasing precipitate dissolution from 820 °C to 880 °C PDG, and that the lifetime after PDG at 920 °C is between the lifetimes achieved after 820 °C and 880 °C PDG.

Coupled device and process silumation tools, collectively known as technology computer-aided design (TCAD), have been used in the integrated circuit industry for over 30 years. These tools allow researchers to quickly converge on optimized devide designs and manufacturing processes with minimal experimental expenditures. The PV industry has been slower to adopt these tools, but is quickly developing competency in using them. This paper introduces a predictive defect engineering paradigm and simulation tool, while demonstrating its effectiveness at increasing the performance and throughput of current industrial processes. the impurity-to-efficiency (I2E) simulator is a coupled process and device simulation tool that links wafer material purity, processing parameters and cell desigh to device performance. The tool has been validated with experimental data and used successfully with partners in industry. The simulator has also been deployed in a free web-accessible applet, which is available for use by the industrial and academic communities.

We present a fast and simple 1D simulation tool to predict solar cell performance as a function of the initial iron content and distribution in the as-grown silicon wafer, the time-temperature profiles applied during the fabrication process, and several parameters related to cell architecture. The applied model consists of three parts that are validated by comparison to experimental results from literature. Assuming a time-temperature profile of a standard solar cell fabrication process, we calculate the redistribution of iron and the evolution of minority carrier lifetime for different as-grown Fe distributions. The solar cell performance as a function of the total iron concentration and the final lifetime distribution is also simulated and compared to experimental results for multicrystalline Si. Keywords: simulation, crystalline silicon solar cell, gettering

There is no doubt about the potential offered by the low-cost fabrication and high efficiency of hybrid organic inorganic perovskite solar cells. However, the service lifetimes of these devices must be increased from months to years to capitalize on their potential. The archetypal hybrid perovskite for solar cells, methylammonium lead iodide (CH3NH3PbI3, abbreviated MAPI), readily degrades in ambient atmosphere under standard operating conditions. Understanding the origin and effects of this degradation can pave the way to better engineer photovoltaic devices and the perovskite material itself. Herein we present the effects of varying pressure on the electrical performance of MAPI solar cells. Solar cell parameters, especially open circuit voltage, are significantly affected by the total ambient pressure and present an unexpected reversible behavior upon pressure cycling. We complement photoluminescence studies as a function of ambient atmosphere and temperature with first principles density functional theory (DFT) calculations. The results suggest that the reversible intercalation of water in MAPI is a necessary component underlying this behavior.

Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer., United States. Department of Energy. Office of Basic Energy Sciences (Contract No. DE-AC02-06CH11357), National Science Foundation (U.S.) (CA No. EEC-1041895), Finnish Cultural Foundation, Fulbright-Technology Industries of Finland Grant, University of California, San Diego. Start Up Funds

Chromium (Cr) can degrade silicon wafer-based solar cell efficiencies at concentrations as low as 10¹⁰cm⁻³. In this contribution, we employ synchrotron-based X-ray fluorescence microscopy to study chromium distributions in multicrystalline silicon in as-grown material and after phosphorous diffusion. We complement quantified precipitate size and spatial distribution with interstitial Cr concentration and minority carrier lifetime measurements to provide insight into chromium gettering kinetics and offer suggestions for minimizing the device impacts of chromium. We observe that Cr-rich precipitates in as-grown material are generally smaller than iron-rich precipitates and that Cr[subscript i] point defects account for only one-half of the total Cr in the as-grown material. This observation is consistent with previous hypotheses that Cr transport and CrSi₂ growth are more strongly diffusion-limited during ingot cooling. We apply two phosphorous diffusion gettering profiles that both increase minority carrier lifetime by two orders of magnitude and reduce [Cr[subscript i]] by three orders of magnitude to 10¹⁰cm⁻³. Some Cr-rich precipitates persist after both processes, and locally high [Cr[subscript i]] after the high-temperature process indicates that further optimization of the chromium gettering profile is possible., United States. Department of Energy (Contract DE-EE0005314), National Science Foundation (U.S.) (Contract EEC-1041895), United States. Department of Energy (Contract EEC-1041895), National Science Foundation (U.S.) (Grant 1122374)

http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6318036, Defect engineering is essential for the production of high-performance silicon photovoltaic (PV) devices with cost-effective solar-grade Si input materials. Phosphorus diffusion gettering (PDG) can mitigate the detrimental effect of metal impurities on PV device performance. Using the Impurity-to-Efficiency (I2E) simulator, we investigate the effect of gettering temperature on minority carrier lifetime while maintaining an approximately constant sheet resistance. We simulate a typical constant temperature plateau profile and an alternative “volcano” profile that consists of a ramp up to a peak temperature above the typical plateau temperature followed by a ramp down with no hold time. Our simulations show that for a given PDG process time, the “volcano” produces an increase in minority carrier lifetime compared to the standard plateau profile for as-grown iron distributions that are typical for multicrystalline silicon. For an initial total iron concentration of 5×1013 cm-3, we simulate a 30% increase in minority carrier lifetime for a fixed PDG process time and a 43% reduction in PDG process cost for a given effective minority carrier lifetime while achieving a constant sheet resistance of 100 Ω/□., National Science Foundation (U.S.), United States. Dept. of Energy (NSF CA No. EEC-1041895), Massachusetts Institute of Technology. School of Engineering (SMA2 Fellowship), National Science Foundation (U.S.) (NSF Graduate Research Fellowship), Alexander von Humboldt-Stiftung (Feodor Lynen Fellowship Program), United States. Dept. of Defense (National Defense Science and Engineering Graduate Fellowship)