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Background: Diffuse large B cell lymphoma (DLBCL) is considered the most common type of non-Hodgkin lymphoma. The global incidence of DLBCL has been doubled in the past decades, highlighting the need for more effective treatment regimens. The curability of DLBCL is heavily influenced by a number of factors, such as the age, the international prognostic index (IPI) score, the molecular cell of origin (COO) subtype, and presence/ absence of specific chromosomal rearrangements or protein expression. Recent gene profiling studies have classified DLBCL into two main categories, germinal center B-cell type (GCB) and activated B-cell type (ABC). Validation of these subtypes has become more applicable after the immunohistochemical algorithm suggested by Hans, which included three commercially available markers, CD10, BCL6, and MUM-1/IRF4. In addition to this classification, DLBCL prognostic models based on different sets of genes or immunohistochemical markers have been proposed. More recently, DLBCLs with translocations of MYC, along with a B-cell lymphoma 2 (BCL2) and/or B-cell lymphoma 6 (BCL6) rearrangement, are now called double-hit lymphoma (DHL) or triple-hit lymphoma (THL), respectively. Furthermore, the co-expre sion of MYC and BCL2 proteins without underlying rearrangements is considered a new adverse prognostic indicator termed double-expressor lymphoma (DEL). The present study is aiming to combine morphological, immunophenotypical, and genetic features of DLBCLs to reach a more reproducible subtyping. Aim: To identify the relation between clinicopathological features as patient age, sex, site of tumor, clinical presentation and tumor stage and the germinal center differentiation in DLBCL (germinal center B-cell (GCB) or activated B-cell (ABC)) and the double/triple genetic hits status.Material and Methods: The material of this study comprised 52 formalin-fixed paraffin- embedded blocks representative of diffuse large B cell lymphoma cases retrieved from the archival material available at the Pathology Department, Faculty of Medicine, Alexandria University. Subclassification of cases into (germinal center / and post-germinal center types) using a panel of immunohistochemical markers including CD10, BCL6 and MUM1 was done and scoring of double/triple hit expression using a panel of immunohistochemical markers including c-MYC, BCL6 and BCL2 was also done and correlation with their subtypes and clinical data was performed.Results: there was significant association between germinal center differentiation and tumor stage (MCp= 0.018).Conclusion: Germinal center differentiation status is a valid method to evaluate the prognosis of DLBCL.

To examine the effects of the nonlocal thermoelastic parameters in a nanoscale semiconductor material, a novel nonlocal model with variable thermal conductivity is provided in this study. The photothermal diffusion (PTD) processes in a chemical action are utilized in the framework of the governing equations. When elastic, thermal, and plasma waves interact, the nonlocal continuum theory is used to create this model. For the main formulations to get the analytical solutions of the thermal stress, displacement, carrier density, and temperature during the nanoscale thermo-photo-electric medium, the Laplace transformation approach in one dimension (1D) of a thin circular plate is utilized. To create the physical fields, mechanical forces and thermal loads are applied to the semiconductor’s free surface. To acquire the full solutions of the research areas in the time-space domains, the inverse of the Laplace transform is applied with several numerical approximation techniques. Under the impact of nonlocal factors, the principal physical fields are visually depicted and theoretically explained.

BACKGROUND: Venous thromboembolism (VTE), encompassing both deep vein thrombosis (DVT) and pulmonary embolism (PE), is a leading cause of morbidity and mortality worldwide. METHODS: GARFIELD-VTE is a prospective, non-interventional observational study of real-world treatment practices. We aimed to capture the 36-month clinical outcomes of 10,679 patients with objectively confirmed VTE enrolled between May 2014 and January 2017 from 415 sites in 28 countries. FINDINGS: A total of 6582 (61.6 %) patients had DVT alone, 4097 (38.4 %) had PE ± DVT. At baseline, 98.1 % of patients received anticoagulation (AC) with or without other modalities of therapy. The proportion of patients on AC therapy decreased over time: 87.6 % at 3 months, 73.0 % at 6 months, 54.2 % at 12 months and 42.0 % at 36 months. At 12-months follow-up, the incidences (95 % confidence interval [CI]) of all-cause mortality, recurrent VTE and major bleeding were 6.5 (7.0-8.1), 5.4 (4.9-5.9) and 2.7 (2.4-3.0) per 100 person-years, respectively. At 36-months, these decreased to 4.4 (4.2-4.7), 3.5 (3.2-2.7) and 1.4 (1.3-1.6) per 100 person-years, respectively. Over 36-months, the rate of all-cause mortality and major bleeds were highest in patients treated with parenteral therapy (PAR) versus oral anti-coagulants (OAC) and no OAC, and the rate of recurrent VTE was highest in patients on no OAC versus those on PAR and OAC. The most frequent cause of death after 36-month follow-up was cancer (n = 565, 48.6 %), followed by cardiac (n = 94, 8.1 %), and VTE (n = 38, 3.2 %). Most recurrent VTE events were DVT alone (n = 564, 63.3 %), with the remainder PE, (n = 236, 27.3 %), or PE in combination with DVT (n = 63, 7.3 %). INTERPRETATION: GARFIELD-VTE provides a global perspective of anticoagulation patterns and highlights the accumulation of events within the first 12 months after diagnosis. These findings may help identify treatment gaps for subsequent interventions to improve patient outcomes in this patient population. ispartof: THROMBOSIS RESEARCH vol:222 pages:31-39 ispartof: location:United States status: published

In this study, a novel model is introduced when the Hall effect associated with a strong magnetic field is taken into account when the electrons and holes interact in the processes of semiconductor material. The plasma-elastic-thermal waves are investigated in the context of diffusive processes during optical-generated transport processes. The variable of thermal conductivity is obtained during graduated temperature due to the thermal impact of fallen light. The governing equations of the novel model are investigated in a unidimensional (1D) way when the electronics and elastic deformations have occurred. The Laplace transforms are used to convert the main dimensionless physical fields according to the initial conditions into the Laplace domain. When certain thermal, mechanical, holes, and electronic conditions are used, the analytical solutions of the fundamental fields can be produced to the outer surface of the semiconductor medium. Mathematically, the Laplacian computational inversion algorithm with a numerical approximation is used to achieve the fundamental physical quantities numerically in the time domain. The influences of several parameters (thermal relaxation times, Hall impact, and thermal conductivity parameters) on thermal conditions, mechanical stress, holes charge carrier field, and carrier density are prescribed with the help of graphical diagrams that are discussed theoretically.

The present work is devoted to a study of the induced temperature and stress fields in an elastic infinite medium with a cylindrical cavity under the purview of hyperbolic two-temperature thermoelasticity. The medium is an isotropic homogeneous thermoelastic material. The bounding plane surface of the cavity is loaded thermally by a non-Gaussian laser beam with a pulse duration of two ps. An exact solution to the problem is obtained in the Laplace transform space and the inversions of the Laplace transform have been carried out numerically. The derived expressions are computed numerically for copper and the results are presented in graphical form. The two-temperature parameter has significant effects on all the studied functions and plays a vital role in the speed propagation of the thermomechanical waves.

Outlined here is an innovative method for characterizing a layer of microelongated semiconductor material under excitation. Fractional time derivatives of a heat equation with a rotational field are used to probe the model during photo-excitation processes. Micropolar-thermoelasticity theory, which the model implements, introduces the microelongation scalar function to characterize the processes occurring inside the microelements. When the microelongation parameters are considered following the photo-thermoelasticity theory, the model investigates the interaction scenario between optical-thermo-mechanical waves under the impact of rotation parameters. During electronic and thermoelastic deformation, the key governing equations have been reduced to dimensionless form. Laplace and Fourier's transformations are used to solve this mathematical problem. Isotropic, homogeneous, and linear microelongated semiconductor medium's general solutions to their respective fundamental fields are derived in two dimensions (2D). To get complete solutions, several measurements must be taken at the free surface of the medium. As an example of numerical modeling of the important fields, we will use the silicon (Si) material’s physicomechanical characteristics. Several comparisons were made using different values of relaxation time and rotation parameters, and the results were graphically shown.

This study simulates the start of coronavirus infection using a mathematical model based on ordinary differential equations (Covid-19). Additionally, provide the numerical treatment and simulation of this model using the finite element approach (FEM). The goal of this research is to stop and slow the spread of a sickness that is ravaging the globe. A susceptible person may also transfer immediately to the quarantined class after the exposed person has been quarantined or moved to one of the contaminated classes. This model was employed by the researchers to account for both asymptomatic and symptomatic infected people. The proposed model is reduced to a set of algebraic equations using the FEM. The resulting system is then created as an optimization problem with constraints, which is subsequently optimized to obtain the solution and the unknown coefficients. The obtained findings are compared to those produced using the fourth-order Runge-Kutta method (RK4). Finally, we calculate the residual error function of the approximation in order to validate the FEM, and it is presented in symmetric forms. MSC 2010: 34A12; 41A30; 47H10; 65N20.

Indroduction: The novel model of a non-local elastic semiconductor material that is microelongated is created. The process of photothermal transfer is responsible for the stimulation of the material. Photo-thermoelastic theories are used when the thermal conductivity is changed for the non-local medium. Under the influence of laser pulses, the effective framework describes the nanoscale microelongation instance as well as the interference between the photo-thermoelastic propagation waves in the non-local medium. It is possible to think of thermal conductivity as a linear function of temperature when electronic and thermoelastic deformation mechanisms are described. Two-dimensional deformation (2D) is used to extract the main fields, which obtained in non-dimension.Methods: Harmonic wave analysis, which is described by the normal mode, has been used to convert the basic equations into non-homogeneous higher-order ordinary differential equations. Applying a small subset of the possible non-local semiconductor surface conditions leads to exhaustive solutions.Result and Discussion: The outcomes of numerical simulations for silicon (Si) are graphically shown. There are comparisons made and explanations given for the investigated physical factors like their thermal conductivity, laser pulses and microelongation parameters.

This article deals with the study of disturbance that travels through the transversely isotropic medium in the form of waves. The particles of the considered medium have an additional property of small-scale internal rotation along with macroscopic translational deformation. This extra translational freedom causes the medium to be micropolar in nature. Along with this, the medium is incompressible, and the dispersion relation of waves propagating through the medium is obtained under specific plan-strain conditions. From the dispersion relation, we can conclude that because of incompressibility, three transverse waves propagate through the medium. The velocity profile, attenuation coefficient, and specific heat loss for these waves are discussed for a particular medium. Later, the special normalized local sensitivity analysis (NLSA) technique is used to depict the effects of parameters on the outcomes of the mathematical model. The obtained results are represented graphically for a particular medium. The proposed model is used to model the mechanical behavior of complex materials with microstructural heterogeneity, such as composites and biological tissues.

The current study focuses on one-dimensional (1D) deformation in an excited microelongated semiconductor medium impacted by optoelectronics with exponential laser-pulsed heat. Diffusion effect is considered in a photothermal problem of a semiconducting media. Microelongated optoelectronics and a broad variety of concepts have been introduced. Appropriate solutions to a set of microelongated photothermal diffusion differential equations have been found. The homogeneous (thermal and mechanical) and isotropic characteristics of the medium are thought to be in the x-direction, including coupled diffusion equations. The linear photo-thermoelasticity (PTE) theory of semiconductors is used to describe thermo-elastodiffusive waves. As a case study, the developed theoretical framework may be used to explore the microelongation-photo-thermoelastic problem in a semiconductor medium caused by the laser pulse. The analytical linear solutions for the main quantities during thermoelastic (TD) and electronic (ED) deformation are obtained using Laplace transforms for dimensionless quantities. To obtain exact expressions of the important physical variables according to certain boundary surface conditions, numerical approximations solutions of the fundamental relevant relations are performed in the Laplace inverse time domain. To describe the wave propagation of the physical fields graphically, the computational results for silicon (Si) semiconductor material are derived using several cases of thermal memory and microelongation factors.

In this study, the modified Green and Lindsay model is utilized to discuss the effects of heating caused by surface absorption of laser radiation in a two-dimensional thermoelastic half-space. The temporal profile of the pulsed laser is taken as a non-Gaussian and the spatial one is a Gaussian. The medium surface is taken to be traction free. The integral transform method is utilized to obtain the general solution by applying the two transformations Hankel and Laplace, in which the inverse of Laplace is performed numerically. The Silicon material is considered as an example to verify the consistency of the obtained results of the new model.

The key aim of this paper is to construct a modified version of the SEIQR essential disease dynamics model for the COVID-19 emergence. The modified SEIQR pandemic model takes a groundbreaking approach to evaluate and monitor the COVID-19 epidemic. The complex studies presented in this paper are based on real-world data from Saudi Arabia. A reproduction number and a systematic stability analysis are included in the new version of SEIQR model dynamics. Using the Jacobian linearization process, we can obtain the domain of the solution and the state of equilibrium based on the modified SEIQR model. The equilibrium and its importance have been identified, and the disease-free stability of the equilibrium has been investigated. The reproduction number was calculated using internal metrics, and the global stability of the current model's equilibrium was demonstrated using Lyapunov's stability theorem. To see how well the SEIQR proposed model went, it was compared to real COVID-19 spread data in Saudi Arabia. According to the results, the new SEIQR proposed model is a good match for researching the spread of epidemics like COVID-19. In the end, we presented an optimal protocol to prevent the dissemination of COVID-19. Staying at home and transporting sick people as far as possible to a safe region is the most effective strategy to prevent COVID-19 spread. It is critical to offer infected people safe and effective treatment, as well as antibiotics and nutrients to non-affected people. To detect confirmed infections, we must provide more effective and reliable diagnostic methods. Furthermore, increasing understanding of how to recognize the disease, its symptoms, and how to confirm the infection.

Reaching a sustainable industry is now possible through digitisation. The current era witnessed an increase in the impact of digital transformation on the economy; this encouraged various sectors to adopt Industry 4.0. Digital supply chain and Industry 4.0 are current buzzwords in all industries that can solve common drawbacks. The logistics sector in particular suffers from numerous weaknesses, one of which is cargo theft. Logistics companies started adopting technology in operations aiming to mitigate cargo thefts and reach a sustainable work environment through their digital supply chains. The Egyptian government intends to participate in the transition into a digital society. This case aims to demonstrate a best practice of digitisation in the logistics sector in the Egyptian market. Global Chains Company was one of the first logistics companies to apply a digital solution through ERP systems. Through the interviews conducted, cargo theft problems and consequences are demonstrated along with the results of applying digitisation to operations and the lessons learned.

In this work, a novel model is presented that describes thermal diffusion processes through non-local semiconductor materials. The material under study is subjected to the influence of a strong magnetic field, which creates a Hall current. Interference between the excited electrons and the excited holes of a non-local semiconductor that had been exposed to temperature was present, and thermal conductivity depending on changes in graduated temperature were accounted for. The governing equations are written in a dimensionless form in one dimension (1D) where the thermal conductivity is taken as a function of temperature through electronic and elastic deformation (ED and ED) processes. Laplace transforms in one dimension with initial conditions were used to convert partial differential equations to arrive at exact formulas of solutions. To obtain the exact linear solutions, some boundary conditions taken on the free surface of the non-local semiconductor were used. Using numerical methods of inverse Laplace transforms, the complete solutions of the physical quantities under study were obtained. To further understand how various variables (thermal memory, variable thermal conductivity, and Hall current) affect the non-local semiconductor, numerical physical fields were simulated, and are graphically depicted, and discussed herein.

This paper investigates an uncommon technique by using the influence of the random function (Weiner process function), on a two-temperature problem, at the free surface of the semiconducting medium, by using the photo-thermoelasticity theory. Using the Silicon material as an example of a semiconducting medium under the influence of a magnetic field, the novel model can be formulated. To make the problem more logical, the randomness of the Weiner process function is aged to the governing stochastic equation. A combining stochastic process with the boundary of the variables is studied. In this case, the stochastic and deterministic solutions were obtained for all physical quantities. The additional noise is regarded as white noise. The problem is investigated according to a two-dimensional (2D) deformation. The normal mode method can be used mathematically to obtain numerically the deterministic, stochastic, and variance solutions of all physical quantities. Three sample paths are obtained by making a comparison between the stochastic and deterministic distributions of the field variables. The impacts of adding randomization to the boundary conditions are highlighted. The numerical results are shown graphically and discussed in consideration of the two-temperature parameter effect.

To examine the effects of the nonlocal thermoelastic parameters in a nanoscale semiconductor material, a novel nonlocal model with variable thermal conductivity is provided in this study. The photothermal diffusion (PTD) processes in a chemical action are utilized in the framework of the governing equations. When elastic, thermal, and plasma waves interact, the nonlocal continuum theory is used to create this model. For the main formulations to get the analytical solutions of the thermal stress, displacement, carrier density, and temperature during the nanoscale thermo-photo-electric medium, the Laplace transformation approach in one dimension (1D) of a thin circular plate is utilized. To create the physical fields, mechanical forces and thermal loads are applied to the semiconductor’s free surface. To acquire the full solutions of the research areas in the time-space domains, the inverse of the Laplace transform is applied with several numerical approximation techniques. Under the impact of nonlocal factors, the principal physical fields are visually depicted and theoretically explained.