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2. DEEP ANISOTROPIC ETCHING OF SILICON USING LOW PRESSURE HIGH DENSITY PLASMA. PRESENTATION OF COMPLEMENTARY TECHNIQUES AND THEIR APPLICATIONS IN MICROTECHNOLOGY

Author

HIBERT, C, DUFOUR, W, and FLUCKIGER, Ph

Abstract

The flexibility of the new available Inductively Coupled Plasma (ICP) reactors provides a lot of possibilities for process development in dry etching field. Deep anisotropic etching of silicon is now possible under control (etch rate, profiles, uniformity) that offers a lot of possibilities for microsystems development. The purpose of this presentation is to give an overview of bulk silicon processing techniques using new ICP etching equipment in the field of microsystems development.

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