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1. Laser Desorption Ionization Time-of-Flight Mass Spectrometry of Glasses and Amorphous Films from Ge-As-Se System

Author

Emeline Baudet, Virginie Nazabal, Petr Němec, Lubomír Prokeš, Josef Havel, Katarína Šútorová, Department of Chemistry (A14/107), Masaryk University [Brno] (MUNI), Department of Physical Electronics, R&D Center for Low-Cost Plasma and Nanotechnology Surface Modifications, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Department of Graphic Arts and Photophysics [University of Pardubice], Faculty of Chemical Technology [University of Pardubice], University of Pardubice-University of Pardubice, Czech Science Foundation [13-05082S], CEPLANT, th project R&D center for low-cost plasma and nanotechnology surface modifications - European Regional Development Fund [CZ.1.05/2.1.00/03.0086], Czech Ministry of Education, Youth, and Sports of the Czech Republic [LM2015082, CZ.1.05/4.1.00/11.0251], Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Chalcogenide, Analytical chemistry, 02 engineering and technology, Mass spectrometry, 01 natural sciences, deposition, Ion, Pulsed laser deposition, chemistry.chemical_compound, telecommunications, [CHIM.ANAL]Chemical Sciences/Analytical chemistry, 0103 physical sciences, Materials Chemistry, Thin film, 010302 applied physics, photonic applications, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, chalcogenide glasses, switch, Amorphous solid, optical-properties, chemistry, thin-films, Ceramics and Composites, Time-of-flight mass spectrometry, 0210 nano-technology, light, Stoichiometry
Abstract

International audience; Laser Desorption Ionization Time-of-Flight Mass Spectrometry was exploited for the characterization of Ge-As-Se chalcogenide glasses and corresponding thin films fabricated using pulsed laser deposition. Main achievement of the paper is the determination of laser generated clusters' stoichiometry. The clusters observed were As-b(+) (b = 1-3), Se-2(-), binary AsbSe+ (b = 1-3), AsbSec- (b = 1-3, c = 1-4), Ge2Sec- (c = 2-3), As3Se2+, Ge2Asb- (b = 2-3), Ge3Asb- (b = 1-2), Ge3Se4-, As5Sec- (c = 4-5), GeAsSe4-, GeaAsSe5- (a = 1-4), GeAs2Se3-, GeAs3Se2-, Ge2As2Se2-, Ge2AsSec- (c = 6-7), and GeAs3Sec- (c = 5-6) (in positive as well as in negative ion mode). The stoichiometries of identified species are compared with the structural units of the glasses/thin films revealed via Raman scattering spectra analysis. Some species are suggested to be fragments of bulk glass as well as thin films. Described method is useful also for the evaluation of the contamination of chalcogenide glasses or their thin films.

Published
2016
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2. Laser Desorption Ionisation Time-​of-​Flight Mass Spectrometry of Chalcogenide Glasses from (GeSe2)​100-​x(Sb2Se3)​x System

Author

Marek Bouška, Virginie Nazabal, Katarína Šútorová, Petr Němec, Lubomír Prokeš, Josef Havel, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), R&D Center for Low-Cost Plasma and Nanotechnology Surface Modifications, Masaryk University [Brno] (MUNI), Department of Physical Electronics, Department of Chemistry (A14/107), Department of Graphic Arts and Photophysics [University of Pardubice], Faculty of Chemical Technology [University of Pardubice], University of Pardubice-University of Pardubice, 13-05082S, Grantová Agentura České Republiky, CZ.1.05/2.1.00/03.0086, European Regional Development Fund, CEPLANT, CZ.1.07/2.3.00/30.0058, Ministry of Education, Youth and Sports of the Czech Republic, Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)

Subjects
Materials science, Chalcogenide, Analytical chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, Mass spectrometry, chemistry.chemical_compound, chemistry, Desorption, Ionization, Materials Chemistry, Ceramics and Composites, Time-of-flight mass spectrometry, Thin film, Ternary operation, Stoichiometry
Abstract

International audience; Laser Desorption Ionization Time-​of-​Flight Mass Spectrometry (LDI TOFMS) was used to characterize chalcogenide glasses from pseudobinary (GeSe2)​100-​x(Sb2Se3)​x system, where x = 5-​60, aiming description of their partial structure through the anal. of the plasma formed due to interaction of pulsed laser beam with studied glasses. The plasma contains pos. or neg. charged clusters; their stoichiometry was detd. as Sec-​ (c = 2-​3)​, Sb+, Se2+, and Sb3+; binary GeSec+, SbSec+​/-​ (c = 1-​2)​, SbbSec+ (b = 2-​3, c = 1-​4)​, GeaSb3+ (a = 1-​4)​, Sb2Sec-​ (c = 3-​4)​, SbSe3-​, and Sb3Se5+; ternary GeSbSe2+, GeSbSec-​ (c = 3-​5)​, GeSbbSe+ (b = 4-​5)​, and Ge9Sb2Sec+ (c = 5-​7) ones. Described method is generally useful not only for partial structural characterization of chalcogenide glasses and corresponding thin films but also for evaluation of their contamination with oxygen and​/or hydrogen.

Published
2015
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3. Laser desorption ionization time-of-flight mass spectrometry of erbium-doped Ga-Ge-Sb-S glasses

Author

Sachinkumar Dagurao, Pangavhane, Petr, Němec, Virginie, Nazabal, Alain, Moreac, Pál, Jóvári, Josef, Havel, Department of Graphic Arts and Photophysics [University of Pardubice], Faculty of Chemical Technology [University of Pardubice], University of Pardubice-University of Pardubice, Institut des Sciences Chimiques de Rennes (ISCR), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Institut de Physique de Rennes (IPR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Institute for Solid State Physics [Budapest], Wigner Research Centre for Physics [Budapest], Hungarian Academy of Sciences (MTA)-Hungarian Academy of Sciences (MTA), Department of Chemistry (A14/107), Masaryk University [Brno] (MUNI), Department of Physical Electronics, R&D Center for Low-Cost Plasma and Nanotechnology Surface Modifications, Support from Czech Science Foundation (Project No. 13-05082S) is greatly acknowledged. This research has been also supported by the project R&D center for low-cost plasma and nanotechnology surface modifications CZ.1.05/2.1.00/03.0086 funded by European Regional Development Fund. 10, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Antimony, Germanium, Lasers, Gallium, [CHIM.MATE]Chemical Sciences/Material chemistry, Mass Spectrometry, Molecular Weight, chalcogenide glass, EXAFS, Raman spectroscopy, erbium dopant, Glass, time-of-flight mass spectrometry, Sulfur
Abstract

International audience; RATIONALE: Rare earth-doped sulphide glasses in the Ga-Ge-Sb-S system present radiative emissions from the visible to the middle infrared range (mid-IR) range, which are of interest for a variety of applications including (bio)-chemical optical sensing, light detection, and military counter-measures. The aim of this work was to reveal structural motifs present during the fabrication of thin films by plasma deposition techniques as such knowledge is important for the optimization of thin film growth. METHODS: The formation of clusters in plasma plume from different concentrations of erbium-doped Ga5 Ge20 Sb10 S65 glasses (0.05, 0.1, and 0.5 wt. % of erbium) using laser (337 nm) desorption ionization (LDI) was studied by time-of-flight mass spectrometry (TOF MS) in both positive and negative ion mode. The stoichiometry of the Gam Gen Sbo Sp (+/-) clusters was determined via isotopic envelope analysis and computer modelling. RESULTS: Several Gam Gen Sbo Sp (+/-) singly charged clusters were found but, surprisingly, only four species (Sb3 S4 (+/-) , GaSb2 Sp (+/-) (p = 4, 5), Ga3 Sb2 S7 (+/-) ) were common to both ion modes. For the first time, species containing rare earths (GaSb2 SEr(+) and GaS6 Er2 (+) ) were identified in the plasma formed from rare earth-doped chalcogenide glasses, directly confirming the importance of gallium presence for rare earth bonding within the glassy matrix. CONCLUSIONS: The local structure of Ga-Ge-Sb-S glasses is at least partly different from the structure of species identified in plasma by mass spectrometry, as deduced from Raman scattering spectroscopy analysis; these glasses are mainly formed by [GeS4/2 ]/[GaS4/2 ] tetrahedra and [SbS3/2 ] pyramids. Extended X-ray absorption fine structure measurements show that Er(3+) ions in Ga-Ge-Sb-S glasses are surrounded by 7 sulphur atoms. Copyright © 2014 John Wiley & Sons, Ltd.

Published
2014
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