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The paper studies the classical problem of determining the extrinsic resistances (RG, RS and RD) of field-effect transistors (FETs), and in particular of high-electron mobility transistors (HEMTs). In articular, this study relies on small-signal measurements of open-channel transistors.

This paper proposes EM mechanism to improve the isolation between transmitting and receiving array antennas using metamaterial EM band gap (MTM-EBG). The proposed mechanism can be applied to full-duplex array antenna system with very closely spaced arrays (0.33λo) with no degradation in radiation pattern. Using the proposed technique the isolation is shown to improve by >30 dB in an antenna array consisting of three-element microstrip patches designed to operate across 9.7 to 12.3 GHz. Parametric analysis was used to optimise the decoupling arrays performances. The proposed antenna array has physical dimensions of 65×22.5×1.6 mm3 and an electrical size of 2.16λo×0.75λo×0.053λo, where λo is free space-wavelength at mid-band of 10 GHz.