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We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller.

© 2021 Additive manufacturing is having a dramatic impact on research and industry across multiple sectors, but the production of additively manufactured systems for ultra-high vacuum applications has so far proved elusive and widely been considered impossible. We demonstrate the first additively manufactured vacuum chamber operating at a pressure below 10−10 mbar, measured via an ion pump current reading, and show that the corresponding upper limit on the total gas output of the additively manufactured material is 3.6 × 10−13 mbar l/(s mm2). The chamber is produced from AlSi10Mg by laser powder bed fusion. Detailed surface analysis reveals that an oxidised, Mg-rich surface layer forms on the additively manufactured material and plays a key role in enabling vacuum compatibility. Our results not only enable lightweight, compact versions of existing systems, but also facilitate rapid prototyping and unlock hitherto inaccessible options in experimental science by removing the constraints that traditional manufacturing considerations impose on component design. This is particularly relevant to the burgeoning field of portable quantum sensors — a point that we illustrate by using the chamber to create a magneto-optical trap for cold 85Rb atoms — and will impact significantly on all application areas of high and ultra-high vacuum.

Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magnetoelectronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations. The optical spin transfer torque acts over a picosecond recombination time of the spin polarized photo-carriers which only leads to a deformation of the internal domain wall structure. We show that subsequent depinning and micro-meter distance displacement without an applied magnetic field or any other external stimuli can only occur due to the inertia of the domain wall.

The magnetic order in antiferromagnetic materials is hard to control with external magnetic fields. Using X-ray Magnetic Linear Dichroism microscopy, we show that staggered effective fields generated by electrical current can induce modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film. A clear correlation between the average domain orientation and the anisotropy of the electrical resistance is demonstrated, with both showing reproducible switching in response to orthogonally applied current pulses. However, the behavior is inhomogeneous at the submicron level, highlighting the complex nature of the switching process in multi-domain antiferromagnetic films.

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature (TC) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of TC with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of TC below 10 K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture.

The UK National Quantum Technology Hub in Sensors and Metrology is one of four flagship initiatives in the UK National of Quantum Technology Program. As part of a 20-year vision it translates laboratory demonstrations to deployable practical devices, with game-changing miniaturized components and prototypes that transform the state-of-the-art for quantum sensors and metrology. It brings together experts from the Universities of Birmingham, Glasgow, Nottingham, Southampton, Strathclyde and Sussex, NPL and currently links to over 15 leading international academic institutions and over 70 companies to build the supply chains and routes to market needed to bring 10–1000x improvements in sensing applications. It seeks, and is open to, additional partners for new application development and creates a point of easy open access to the facilities and supply chains that it stimulates or nurtures.

24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 7-14, The development of the intermediate band solar cell is attracting more attention every day as new results appear. In this paper we aim to describe the evolution of the research from an initial theoretical proposal to the first stages of implementation using quantum dots and the experimental proof of the concepts, followed by the effort of finding bulk intermediate band materials and cells, and the demonstration of how the achievement of an intermediate band suppresses the non-radiative recombination attributed to deep centres. Finally, the project IBPOWER that continues EC support for the intermediate band concept is also described.

Time-resolved pump-probe magneto-optical method was used to study Fe/CuMnAs bilayer. The probe polarization dependence was used to identify and separate parts of detected signals due to Faraday and Voigt magneto-optical effects that provide information about pump-induced magnetization precession in ferromagnetic (FM) Fe and demagnetization in antiferromagnetic (AF) CuMnAs layers, respectively. We observed a 180 deg phase shift in the precession signal at non-zero magnetic field that we interpreted as a signature of the magnetic anisotropy induced in the FM by the adjacent AF layer. Unlike in x-ray magnetic linear dichroism experiments, we did not observe any significant reorientation of magnetic moments in CuMnAs by external magnetic field due to the interlayer exchange coupling with Fe. Differences between these two experimental techniques, providing the distinct pictures, are discussed.

Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which is antiparallel to the Fe magnetization. The staggered magnetization of the 5?nm thick CuMnAs layer is rotatable under small magnetic fields, due to the interlayer exchange coupling. This allows us to obtain the x-ray magnetic linear dichroism spectra for different crystalline orientations of CuMnAs in the (001) plane. This is a key parameter for enabling the understanding of domain structures in CuMnAs imaged using x-ray magnetic linear dichroism microscopy techniques.