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A fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP-DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100 GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10 �� 1 dB within the frequency from 82 to 95 GHz with a saturated output power of -1 dBm at 86 GHz and >5 dB conversion gain between 75 and 100 GHz. The up-converter exhibits 25 GHz of IF bandwidth. The DC power consumption is only 51 mW. �� 2020 The Authors. Microwave and Optical Technology Letters published by Wiley Periodicals, Inc.

This document is the deliverable “D7.3 – Data Management Plan (Version 2)” of the European project ULTRAWAVE (H2020 ICT-09-2017 762119) " Ultra Capacity Wireless Layer beyond 100 GHz based on Millimeter-wave Travelling Wave Tubes".

This document is the deliverable “D7.6 – Dissemination & Communication Report” of the European project ULTRAWAVE (H2020 ICT-09-2017 762119) " Ultra Capacity Wireless Layer beyond 100 GHz based on Millimeter-wave Travelling Wave Tubes".

This document is the deliverable “D7.3 – Data Management Plan (Version 1)” of the European project ULTRAWAVE (H2020 ICT-09-2017 762119) " Ultra Capacity Wireless Layer beyond 100 GHz based on Millimeter-wave Travelling Wave Tubes".

This document is the deliverable “D7.1 – Press Release” of the European project ULTRAWAVE (H2020 ICT-09-2017 762119) " Ultra Capacity Wireless Layer beyond 100 GHz based on Millimeter-wave Travelling Wave Tubes".

This document is the deliverable “D7.2 – Project Website” of the European project ULTRAWAVE (H2020 ICT-09-2017 762119) " Ultra Capacity Wireless Layer beyond 100 GHz based on Millimeter-wave Travelling Wave Tubes".

We report on the realization mymargin of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4- mu m -wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies. © 1963-2012 IEEE.