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UV curable cycloaliphatic epoxy functionalized oligosiloxane resin is synthesized by non-hydrolytic sol–gel reaction for application in encapsulation of organic light emitting devices (OLEDs). The physical and chemical properties of polymerized cycloaliphatic epoxy hybrid materials (hybrimers) are easily tunable by controlling the precursors. A single hybrimer coating on a PET film is optically transparent and shows low permeability of up to 0.68 g m−2 day−1 per mil measured by a Ca degradation test. It is found that the permeability is influenced by the siloxane and epoxy network density, and the surface energy of the coating. An optimized hybrimer barrier coated film is applied to the encapsulation of an OLED with the aim of extending life-time.

This study describes the use of fluorinated silicon nitride film as a bottom antireflective layer (BARL) material suitable for line-patterning in quarter-micron KrF excimer laser lithography. For the structures of photoresist/BARL (300Å)/c-Si and photoresist/BARL (300 Å )/W-Si at a wavelength of 248nm, 0% reflectance could be achieved when the refractive index (n) and extinction coefficient (k) values of the film are 2.11 and 0.68 or 2.05 and 0.59, respectively. The fluorinated silicon nitride thin films on p-type (100) Si substrates obtained by inductively coupled plasma enhanced CVD have been evaluated with the variations of NF3 flow rates under the two conditions of SiH4:N2=2:15 and 3:20 (seem). The films optical constants and reflectance were investigated by spectroscopic ellipsometry combined with a reflectance simulation program. The film n and k values at 248nm vary in the ranges of 1.67~2.35 and 0.01~0.69, respectively, depending on gas flow ratio of SiH4:N2:NF3. Low reflectance of below 5% can be obtained from reflectance simulation for two deposition conditions with a BARL thickness of 300Å. In addition, the reflectance could be reduced to almost 0% by controlling film thickness. Finally, the antireflective layer performance was investigated using KrF excimer laser lithography.

C using an ultraviolet(UV) photo-annealing process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to theincorporation of a chelating agent, acetylacetone, which also acts as a UV-activator. The UV photo-annealing and vacuum annealingimprove the electrical performance of the ZTO TFT with mobility of 2 cm

The hydrosilylation reaction is a dominant curing method for the light-emitting diode (LED) silicone encapsulant, which requires characteristics of high transparency, high refractive index, and thermal stability against the LED junction temperature. In this research, we synthesized a hydrogen containing oligosiloxane resin through non-hydrolytic sol–gel condensation. Methyldiethoxysilane (MDES) and diphenylsilanediol (DPSD) were used as precursors and a non-hydrolytic sol–gel condensation reaction was performed under acidic conditions. The synthesized hydrogen oligosiloxane resin was mixed with a phenyl and vinyl containing oligosiloxane (PVO) resin, which was prepared by a sol–gel condensation between vinyltrimethoxysilane (VTMS) and the DPSD. This blended solution was cured at 150 °C for 4 hours to complete the hydrosilylation reaction. The cured material (phenyl hybrimer) shows low shrinkage during the curing reaction and provides excellent transparency (∼90% at 450 nm) and thermal stability (440 °C) with a high refractive index (n = 1.58 at 632.8 nm).

Thin-film transistors (TFTs) with indium based metal oxide, aluminum indium oxide, channel layers were fabricated via a simple and low-cost solution process. The process temperature was reduced to 250°C, an applicable temperature to plastic substrates, by applying post-annealing. Post-annealing under various atmospheric conditions effectively converts the remaining In(OH) species to a metal oxide at low temperature. It was revealed that humid O2 post-annealing mostly facilitated the conversion of In(OH) species to a metal oxide. The optimized low temperature (i.e., 250°C) solution processed AIO TFT exhibits a channel mobility of 2.37 cm2/Vs, a sub-threshold slope of 0.6 V/decade, and an on-to-off current ratio greater than 106.

Thin-film transistors (TFTs) with aluminum indium oxide channel layers were fabricated via a simple and low cost solution process. The substitution of Al on In sites in the In 2 O 3 lattice was verified by X-ray diffraction analysis. The maximum heat-treatment temperature of these transistors was 350°C, and the resultant thin films were highly transparent (with >90% transmittance). The fabricated TFTs operated in an enhancement mode on a positive bias and showed an n-type semiconductor behavior. They exhibited a channel mobility of 19.6 cm 2 /V s, a subthreshold slope of 0.3 V/decade, and an on-to-off current ratio greater than 10 8 .