1. KPFM - Raman Spectroscopy Coupled Technique for the Characterization of Wide Bandgap Semiconductor Devices
- Author
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Bercu, Nicolas, Lazar, Mihai, Simonetti, Olivier, Adam, Pierre-Michel, Brouillard, Mélanie, Giraudet, Louis, Laboratoire de Recherche en Nanosciences - EA 4682 (LRN), Université de Reims Champagne-Ardenne (URCA)-SFR CAP Santé (Champagne-Ardenne Picardie Santé), Université de Reims Champagne-Ardenne (URCA)-Université de Reims Champagne-Ardenne (URCA)-SFR Condorcet, Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS)-Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS), Lumière, nanomatériaux et nanotechnologies (L2n), and Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
KPFM ,[SPI]Engineering Sciences [physics] ,Condensed Matter::Materials Science ,SiC device characterization ,Mechanics of Materials ,Mechanical Engineering ,Raman spectroscopy ,General Materials Science ,[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det] ,AFM ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Condensed Matter Physics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience; A non-destructive technique for the characterization of the doped regions inside wide bandgap (WBG) semiconductor structures of power devices is presented. It consists in local measurements of the surface potential by Kelvin Probe Force Microscopy (KPFM) coupled to micro-Raman spectroscopy. The combined experiments allow to visualize the space charge extent of the doped region using the near-field mapping and to estimate its dopant concentration using the Raman spectroscopy. The technique has been successfully applied for the characterization of a WBG SiC (silicon carbide) device.
- Published
- 2022