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The direct preparation of p-type transparent conducting Ga-doped SnO2 thin films and their fundamental application in transparent p–n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO2:F-coated glass, transparent p–n homojunction diode was obtained. It exhibits a distinct current–voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications.

With increasing film thickness of the epitaxial BiFeO3 (001) films deposited on SrTiO3 substrates from 30 to 720 nm, the crystal structure evolutes from a fully strained tetragonal lattice to partially relaxed monoclinic one with rotated twins. Although the mismatch strain results in a significant lattice distortion and twinning evolution, the polarization does not show a direct correlation with strain. Instead, there is a strong dependence of polarization on the body diagonal length of the distorted pseudocubic unit cell. The distortion in the polarization direction is the critical parameter, other than strain, that determines the polarization in the monoclinic phase ferroelectric thin films.