201. Low frequency noise in SOI transistors (Invited Paper)
- Author
-
J. C. S. Woo and Tony Tseng
- Subjects
Engineering ,business.industry ,Infrasound ,Transistor ,Electrical engineering ,Silicon on insulator ,Hardware_PERFORMANCEANDRELIABILITY ,Noise (electronics) ,law.invention ,CMOS ,law ,Hardware_INTEGRATEDCIRCUITS ,Overshoot (microwave communication) ,Baseband ,Electronic engineering ,Radio frequency ,business - Abstract
With the inherent advantages in SOI CMOS technology, minimizing DC and switching floating body effects have enabled high speed digital processors with more than a 25% improvement over bulk silicon CMOS design. Currently, there is a need for a more comprehensive understanding of AC characteristics on SOI CMOS technology for mixed-mode baseband and RF (radio frequency) applications. The objective of this paper is to present a study of unique AC floating body effects and the resultant low-frequency noise overshoot phenomenon in SOI CMOS technology. Further study of their impact on the RF arena will also be discussed.
- Published
- 2005