Search

Boron neutron capture therapy (BNCT) was clinically approved in 2020 and exhibits remarkable tumour rejection in preclinical and clinical studies. It is binary radiotherapy that may selectively deposit two deadly high-energy particles (4He and 7Li) within a cancer cell. As a radiotherapy induced by localized nuclear reaction, few studies have reported its abscopal anti-tumour effect, which has limited its further clinical applications. Here, we engineer a neutron-activated boron capsule that synergizes BNCT and controlled immune adjuvants release to provoke a potent anti-tumour immune response. This study demonstrates that boron neutron capture nuclear reaction forms considerable defects in boron capsule that augments the drug release. The following single-cell sequencing unveils the fact and mechanism that BNCT heats anti-tumour immunity. In female mice tumour models, BNCT and the controlled drug release triggered by localized nuclear reaction causes nearly complete regression of both primary and distant tumour grafts.

Boron neutron capture therapy (BNCT) was clinically approved in 2020 and exhibits remarkable tumour rejection in preclinical and clinical studies. It is binary radiotherapy that may selectively deposit two deadly high-energy particles (4He and 7Li) within a cancer cell. As a radiotherapy induced by localized nuclear reaction, few studies have reported its abscopal anti-tumour effect, which has limited its further clinical applications. Here, we engineer a neutron-activated boron capsule that synergizes BNCT and controlled immune adjuvants release to provoke a potent anti-tumour immune response. This study demonstrates that boron neutron capture nuclear reaction forms considerable defects in boron capsule that augments the drug release. The following single-cell sequencing unveils the fact and mechanism that BNCT heats anti-tumour immunity. In female mice tumour models, BNCT and the controlled drug release triggered by localized nuclear reaction causes nearly complete regression of both primary and distant tumour grafts.

Researches on caesium lead bromide (CsPbBr3) demonstrated that it could be used as a scintillator or direct detector for radiation detection. Exploring the combination of caesium lead bromide and radiation-resistant semiconductors for gamma and neutron detection in the nuclear reactor core is a new research direction. The radiation resistance of CsPbBr3 will determine its suitability as a radiation detection material for high-intensity radiation environments such as in reactor core monitoring. To demonstrate the radiation-resistant performance of the caesium lead bromide, this research studied the effects of neutron irradiation with different energy levels on CsPbBr3 (1 eV, 1 keV, and 1 MeV). Geant4 is used to obtain the PKA (Primary Knock-on Atoms) energy spectrum of CsPbBr3 under neutron irradiations. These data were used by Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) to simulate the distribution of vacancies and interstitial atoms at the molecular level of the material. The vacancy formation energy for CsPbBr3 was studied as well by LAMMPS. The research will contribute to further study the performance changes of caesium lead bromide under neutron irradiation to verify the possibility of using it for radiation-resistant reactor core gamma and neutron detectors.

p-i-n AlxGa1-xAs/GaAs detectors with graded compositions and graded doping were grown and prepared. From the current–voltage and capacitance–voltage measurement results, the devices had good p–n junction diode characteristics, and the electric field strength under an unbiased voltage was 1.7 9 105 Vcm-1. The full width at half maximum and charge collection efficiency of the detectors obtained from energy spectrum measurements of 5.48-MeV alpha particles were 3.04 and approximately 93%, respectively. In this study, we created the most advanced and promising state-of-the-art unbiased detector reported to date.

The development of new fast neutron reactors and nuclear fusion reactors requires new neutron detectors in extreme environments. Due to its wide bandgap (3.4 eV) and radiation resistance capability, gallium nitride (GaN) is a candidate for neutron detection in extreme environments. This study introduces a novel simulation method of charge collection efficiency (CCE) for GaN pin thin-film neutron detector based on the Hecht equation and Monte Carlo simulation. A modified 2-carrier Hecht equation is used to simulate the CCE of the detector with a different depth depletion region. After obtaining the neutron energy deposition distribution in the sensitive volume of the detector, the Hecht equation is used to calculate the charge collection efficiency at different positions of the detector under a uniform electric field. The maximum relative error between the simulated CCE and the experimental CCE value is about 6.3%.

Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al2O3 substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.

Researches on caesium lead bromide (CsPbBr3) demonstrated that it could be used as a scintillator or direct detector for radiation detection. Exploring the combination of caesium lead bromide and radiation-resistant semiconductors for gamma and neutron detection in the nuclear reactor core is a new research direction. The radiation resistance of CsPbBr3 will determine its suitability as a radiation detection material for high-intensity radiation environments such as in reactor core monitoring. To demonstrate the radiation-resistant performance of the caesium lead bromide, this research studied the effects of neutron irradiation with different energy levels on CsPbBr3 (1 eV, 1 keV, and 1 MeV). Geant4 is used to obtain the PKA (Primary Knock-on Atoms) energy spectrum of CsPbBr3 under neutron irradiations. These data were used by Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) to simulate the distribution of vacancies and interstitial atoms at the molecular level of the material. The vacancy formation energy for CsPbBr3 was studied as well by LAMMPS. The research will contribute to further study the performance changes of caesium lead bromide under neutron irradiation to verify the possibility of using it for radiation-resistant reactor core gamma and neutron detectors.

The development of new fast neutron reactors and nuclear fusion reactors requires new neutron detectors in extreme environments. Due to its wide bandgap (3.4 eV) and radiation resistance capability, gallium nitride (GaN) is a candidate for neutron detection in extreme environments. This study introduces a novel simulation method of charge collection efficiency (CCE) for GaN pin thin-film neutron detector based on the Hecht equation and Monte Carlo simulation. A modified 2-carrier Hecht equation is used to simulate the CCE of the detector with a different depth depletion region. After obtaining the neutron energy deposition distribution in the sensitive volume of the detector, the Hecht equation is used to calculate the charge collection efficiency at different positions of the detector under a uniform electric field. The maximum relative error between the simulated CCE and the experimental CCE value is about 6.3%.

p-i-n AlxGa1-xAs/GaAs detectors with graded compositions and graded doping were grown and prepared. From the current–voltage and capacitance–voltage measurement results, the devices had good p–n junction diode characteristics, and the electric field strength under an unbiased voltage was 1.7 9 105 Vcm-1. The full width at half maximum and charge collection efficiency of the detectors obtained from energy spectrum measurements of 5.48-MeV alpha particles were 3.04 and approximately 93%, respectively. In this study, we created the most advanced and promising state-of-the-art unbiased detector reported to date.

Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al2O3 substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.

Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga2O3) and gallium nitride (GaN), and the converter layer materials are boron carbide (B4C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.

Gallium nitride (GaN) is a direct energy gap semiconductor material with a wide bandgap, high thermal conductivity, high chemical stability, and strong resistance to radiation. It has broad prospects in the application of optoelectronics, high temperature and high power devices, and particle detectors. In this work, an early-stage GaN radiation-hardened neutron detector is described. Monte Carlo simulations using Geant4 10.6 are used to investigate and optimize the converter layers and active volume for the detector and the suggested thickness needed to achieve the highest detection efficiency is given. Further, the gamma rejection ability for GaN has been studied, and the spatial distribution of the partial reaction type of gamma rays with GaN are shown for the first time. This work will aid the design and fabrication of radiation-resistant GaN neutron detectors and will benefit reactor monitoring, high-energy physics experiments, and nuclear fusion research.

Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga2O3) and gallium nitride (GaN), and the converter layer materials are boron carbide (B4C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.

Gallium nitride (GaN) is a direct energy gap semiconductor material with a wide bandgap, high thermal conductivity, high chemical stability, and strong resistance to radiation. It has broad prospects in the application of optoelectronics, high temperature and high power devices, and particle detectors. In this work, an early-stage GaN radiation-hardened neutron detector is described. Monte Carlo simulations using Geant4 10.6 are used to investigate and optimize the converter layers and active volume for the detector and the suggested thickness needed to achieve the highest detection efficiency is given. Further, the gamma rejection ability for GaN has been studied, and the spatial distribution of the partial reaction type of gamma rays with GaN are shown for the first time. This work will aid the design and fabrication of radiation-resistant GaN neutron detectors and will benefit reactor monitoring, high-energy physics experiments, and nuclear fusion research.

The symbiotic interaction between arbuscular mycorrhizal fungi (AMF) and land plants is essential for efficient nutrient acquisition and utilisation. Our understanding of key processes controlling the AMF colonisation in rice is still limited. Dongxiang wild rice (DY) exhibited a stronger colonisation with Rhizophagus irregularis than the rice cultivar Zhongzao 35 (ZZ35). Chromosome segment substitution lines were constructed and the OsCERK1 gene from DY was mapped. Transgenic plants in the japonica rice Zhonghua 11 (ZZ11) were constructed to compare root colonisation by AMF. Chromosome single-segment substitution lines containing OsCERK1(DY) showed higher phosphorus content and grain yield relative to ZZ35. Four amino acids substitutions were identified among the OsCERK1 haplotypes of DY, ZZ35 and ZH11 and two of these were in the second lysine-motif domain, which is essential for the differences of AMF colonisation level among rice varieties. Heterologous expression of OsCERK1(DY) in ZH11 significantly enhanced AMF colonisation and increased resistance against the pathogenic fungi Magnaporthe oryzae. Notably, the OsCERK1(DY) haplotype was absent from 4660 cultivated rice varieties. We conclude that OsCERK1 is a key gene affecting the symbiotic interaction with AMF and OsCERK1(DY) has the biotechnological potential to increase rice phosphorus acquisition and utilisation efficiency for sustainable agriculture.

The symbiotic interaction between arbuscular mycorrhizal fungi (AMF) and land plants is essential for efficient nutrient acquisition and utilisation. Our understanding of key processes controlling the AMF colonisation in rice is still limited. Dongxiang wild rice (DY) exhibited a stronger colonisation with Rhizophagus irregularis than the rice cultivar Zhongzao 35 (ZZ35). Chromosome segment substitution lines were constructed and the OsCERK1 gene from DY was mapped. Transgenic plants in the japonica rice Zhonghua 11 (ZZ11) were constructed to compare root colonisation by AMF. Chromosome single-segment substitution lines containing OsCERK1(DY) showed higher phosphorus content and grain yield relative to ZZ35. Four amino acids substitutions were identified among the OsCERK1 haplotypes of DY, ZZ35 and ZH11 and two of these were in the second lysine-motif domain, which is essential for the differences of AMF colonisation level among rice varieties. Heterologous expression of OsCERK1(DY) in ZH11 significantly enhanced AMF colonisation and increased resistance against the pathogenic fungi Magnaporthe oryzae. Notably, the OsCERK1(DY) haplotype was absent from 4660 cultivated rice varieties. We conclude that OsCERK1 is a key gene affecting the symbiotic interaction with AMF and OsCERK1(DY) has the biotechnological potential to increase rice phosphorus acquisition and utilisation efficiency for sustainable agriculture.

Yunchen Luo,1 Rekha Bajoria,2 Yongrong Lai,3 Hongfei Pan,4 Qiaochuan Li,3 Zhongming Zhang,3 Pijian Yang,5 Ratna Chatterjee,2 Yuzhen Liang11Department of Endocrinology and Metabolism, Second Affiliated Hospital of Guangxi Medical University, Nanning, Guangxi, People’s Republic of China; 2Reproductive Medicine, Institute for Women’s Health, Haematology Unit, University College Hospitals and Royal Free Hospital, London, UK; 3Department of Haematology, First Affiliated Hospital of Guangxi Medical University, Nanning, Guangxi, People’s Republic of China; 4Department of Paediatrics, Affiliated Hospital of Youjiang Medical College for Nationality, Nanning, Guangxi, People’s Republic of China; 5Department of Geriatric Endocrinology, First Affiliated Hospital of Guangxi Medical University, Nanning, Guangxi, People’s Republic of ChinaPurpose: To determine the prevalence and underlying pathology of abnormal glucose homeostasis in Chinese patients with non-transfusion-dependent thalassemia (NTDT).Patients and methods: In this study, we enrolled 211 patients aged 4–63 years with NTDT, including 79 β thalassemia intermedia patients, 114 Hb H disease patients and 18 Hb E/β thalassemia patients. All had oral glucose tolerance test, serum ferritin (SF), homeostasis model assessment (HOMA) and liver iron concentration (LIC) measurement. One hundred and twenty healthy age-matched controls were also used for the comparative purpose. Iron load was assessed by using SF and hepatic load by LIC using validated MRI techniques.Results: The 211 patients were divided into three groups according to their fasting and 2 hrs postprandial blood glucose levels: hypoglycemic, normal glucose tolerance (NGT) and hyperglycemic groups. In this study, 149 patients had NGT, 33 had hypoglycemia, 4 had diabetes and 25 had impaired glucose tolerance (IGT). None had impaired fasting glucose. There was a significant correlation betwee

A geological map is presented showing the distribution of chromitite ore bodies, and representative compositions of Os-Ir, Os-Ir-Ru, Pt-Fe, Pt-Os-Fe and Ir-Ni-Fe alloys, Fe silicides and native Si and Fe in the chromitites are tabulated. Triangular diagrams illustrate the compositional variations in the alloys and their characteristics are described using reflected-light photomicrographs., A geological map is presented showing the distribution of chromitite ore bodies, and representative compositions of Os-Ir, Os-Ir-Ru, Pt-Fe, Pt-Os-Fe and Ir-Ni-Fe alloys, Fe silicides and native Si and Fe in the chromitites are tabulated. Triangular diagrams illustrate the compositional variations in the alloys and their characteristics are described using reflected-light photomicrographs.