1. Effect of Annealing on Phase Separation in Ternary III-N Alloys
- Author
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RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Sakharov, A. V., Lundin, W. V., Krestnikov, I. L., Zavarin, E. E., Usikov, A. S., RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Sakharov, A. V., Lundin, W. V., Krestnikov, I. L., Zavarin, E. E., and Usikov, A. S.
- Abstract
The report investigated temperature dependence of photoluminescence for different types of structures with ternary III-N alloys. It is shown that optical properties can be strongly affected by composition fluctuations in AlGaN or InGaN alloys. For AlGaN layers rapid thermal annealing leads to effective decrease in nonuniformity. while for InGaN multilayer structure with dense arrays of quantum dots RTA leads to increase in phase separation., Pres: 8th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia, 19-23 Jun 2000, p216-218. This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings
- Published
- 2000