1. Electron Mobility in γ-Al2O3/SrTiO3
- Author
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Christensen, Dennis Valbjørn, Frenkel, Y., Schütz, P., Trier, Felix, Wissberg, S., Claessen, R., Kalisky, B., Smith, A., Chen, Y. Z., Pryds, Nini, Christensen, Dennis Valbjørn, Frenkel, Y., Schütz, P., Trier, Felix, Wissberg, S., Claessen, R., Kalisky, B., Smith, A., Chen, Y. Z., and Pryds, Nini
- Abstract
One of the key issues in engineering oxide interfaces for electronic devices is achieving high electron mobility. SrTiO3-based interfaces with high electron mobility have gained a lot of interest due to the possibility of combining quantum phenomena with the many functionalities exhibited by SrTiO3. To date, the highest electron mobility (140 000 cm2/V s at 2 K) is obtained by interfacing perovskite SrTiO3 with spinel γ-Al2O3. The origin of the high mobility, however, remains poorly understood. Here, we investigate the scattering mechanisms limiting the mobility in γ-Al2O3/SrTiO3 at temperatures between 2 and 300 K and over a wide range of sheet carrier densities. For T>150 K, we find that the mobility is limited by longitudinal optical phonon scattering. For large sheet carrier densities (>8×1013 cm−2), the screened electron-phonon coupling leads to room-temperature mobilities up to μ∼12 cm2/V s. For 5 K
- Published
- 2018