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A (Mo0.24Cr0.76)0.40Al0.32B0.28 thin film was deposited by direct current magnetron sputtering at 600 °C substrate temperature. Analysis by X-ray diffraction, energy-dispersive X-ray spectroscopy, elastic recoil detection analysis, and high-resolution scanning transmission electron microscopy revealed the formation of the previously unreported (Mo,Cr)2AlB2 MAB phase, along with Cr3AlB4, CrB4, and Mo, in good agreement with density functional theory (DFT) calculations. Hence, the MAB phase family in the Mo-Cr-Al-B system is extended by a novel, quaternary member.

A (Mo0.24Cr0.76)0.40Al0.32B0.28 thin film was deposited by direct current magnetron sputtering at 600 °C substrate temperature. Analysis by X-ray diffraction, energy-dispersive X-ray spectroscopy, elastic recoil detection analysis, and high-resolution scanning transmission electron microscopy revealed the formation of the previously unreported (Mo,Cr)2AlB2 MAB phase, along with Cr3AlB4, CrB4, and Mo, in good agreement with density functional theory (DFT) calculations. Hence, the MAB phase family in the Mo-Cr-Al-B system is extended by a novel, quaternary member.

A (Mo0.24Cr0.76)0.40Al0.32B0.28 thin film was deposited by direct current magnetron sputtering at 600 °C substrate temperature. Analysis by X-ray diffraction, energy-dispersive X-ray spectroscopy, elastic recoil detection analysis, and high-resolution scanning transmission electron microscopy revealed the formation of the previously unreported (Mo,Cr)2AlB2 MAB phase, along with Cr3AlB4, CrB4, and Mo, in good agreement with density functional theory (DFT) calculations. Hence, the MAB phase family in the Mo-Cr-Al-B system is extended by a novel, quaternary member.

Recent developments in Sb2Se3 van der Waals material as an absorber candidate for thin film photovoltaic applications have demonstrated the importance of surface management for improving the conversion efficiency of this technology. Sb2Se3 thin films’ versatility in delivering good efficiencies in both superstrate and substrate configurations, coupled with a compatibility with various low-temperature deposition techniques (below 500 °C and often below 350 °C), makes them highly attractive for advanced photovoltaic applications. This study presents a comparative analysis of the most effective chemical etchings developed for related thin film chalcogenide technologies to identify and understand the most appropriate surface chemical treatments for Sb2Se3 in substrate configuration, synthesized using a sequential process at very low temperatures (320 °C). Eight different chemical etchings were tested and investigated, and the results show that only KCN-based solutions lead to an improvement in the solar cell’s performance, primarily due to an increase in the fill factor. Surface analysis of the samples shows that KCN etching produces very Sb-rich surfaces that do not affect the properties of the bulk. It is proposed that this Sb-rich interface inverts the surface polarity, creating a “buried junction” with CdS, thereby explaining the improvement of the fill factor of the devices, as confirmed by device modeling. The results of this study underscore the importance of surface management in low-temperature synthesized Sb2Se3 absorbers, where Sb-rich interfaces are crucial for achieving high-efficiency devices. This research contributes to ongoing efforts to improve the performance of Sb2Se3 thin film photovoltaic technology and could pave the way for the development of more efficient solar cells with optimized interfaces., Postprint (published version)

A (Mo0.24Cr0.76)0.40Al0.32B0.28 thin film was deposited by direct current magnetron sputtering at 600 °C substrate temperature. Analysis by X-ray diffraction, energy-dispersive X-ray spectroscopy, elastic recoil detection analysis, and high-resolution scanning transmission electron microscopy revealed the formation of the previously unreported (Mo,Cr)2AlB2 MAB phase, along with Cr3AlB4, CrB4, and Mo, in good agreement with density functional theory (DFT) calculations. Hence, the MAB phase family in the Mo-Cr-Al-B system is extended by a novel, quaternary member.

Complexes like iron (II)-triazoles exhibit spin crossover behavior at ambient temperature and are often considered for possible application. In previous studies, we implemented complexes of this type into polymer nanofibers and first polymer-based optical waveguide sensor systems. In our current study, we synthesized complexes of this type, implemented them into polymers and obtained composites through drop casting and doctor blading. We present that a certain combination of polymer and complex can lead to composites with high potential for optical devices. For this purpose, we used two different complexes [Fe(atrz)3](2ns)2 and [Fe(atrz)3]Cl1.5(BF4)0.5 with different polymers for each composite. We show through transmission measurements and UV/VIS spectroscopy that the optical properties of these composite materials can reversibly change due to the spin crossover effect.

Combining theoretical ab initio calculations with high-purity thin film sample synthesis and in situ measurements is a compelling way to bridge the gap in our understanding concerning hydrogen in metallic glasses, which is the primary work of this dissertation thesis. The main emphasis has been on how hydrogen affects the structure of metallic glasses, and how those changes influence not only the electronic properties of the amorphous metals but also their thermal stability. The real-space correlations in the form of the pair distribution functions in thin metallic films have primarily only been accessible through synchrotron radiation. An effective methodological procedure using laboratory-based x-ray sources is here brought forth, which, for the first time, can produce accessible and accurate pair distribution functions from thin films down to a thickness of 80 nm. The underpinning mechanisms behind the hydrogen-induced volume expansion of metallic glasses in the form of the dipole force tensor and an elastic hydrogen-hydrogen interaction were examined using in situ neutron reflectometry and first-principles calculations of expanding V80Zr20 amorphous structures. The dipole force tensor was concluded to be similar in magnitude to a mole-fraction-weighted sum of the ones found in hydrogen-contained vanadium and zirconium crystals, and the theoretical calculations demonstrated that it and the interaction energy varies with hydrogen concentration. The electronic structure of the metallic glass V80Zr20 was determined via hard x-ray photoemission spectrometry and confirmed by first-principles calculations to be modified by the presence of hydrogen, in which a collection of s-d hybridized states 7 eV below the Fermi level was formed. The changes closer to the Fermi level, together with the volume expansion, were via experiments and ab initio calculations established to cause a parabolic change in resistance and a strong wavelength dependence on the optical tr

Among the lead-free alternatives currently under research, silver niobate (AgNbO3) is a promising candidate to replace lead-based ceramics in dielectric capacitors for energy storage. Homogeneity and phase-purity of the used thin films are vital for optimal performance of these devices. In this study, a systematic variation of oxygen partial pressure and bias voltage during reactive d.c. magnetron co-sputtering from metallic targets is employed to synthesise AgNbO3 thin films. Structural and chemical composition of the films are investigated using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, elastic recoil detection analysis, and Rutherford backscattering spectrometry. The findings emphasise the necessity of precise parameter control during deposition to avoid the presence of undesirable secondary phases like Ag and Ag2Nb4O11 and to ensure the formation of homogeneous and phase-pure AgNbO3 thin films. The gained insights demonstrate the potential of reactive d.c. magnetron sputtering for the deposition of lead-free AgNbO3 thin films, offering pathways for enhanced environmental compatibility of future dielectric capacitors.

Cu2MnSnS4 (CMTS) is a promising candidate for application in thin film for photovoltaics (PV), thanks to sustainability and low cost of its components. Nevertheless, reported efficiencies are still poor, with a current world-record of 1.13% for a solar cell with CMTS absorber layer made by sputtering and sulfurization [1]. This work reports about a simple and low-cost synthesis procedure, starting from a solution containing all the precursors, without the need of hazardous external sulfurizing agents. CMTS thin films were made by blade coating of the solution on molybdenum substrate and followed by an annealing at 550°C under argon atmosphere, without the aid of external sulphurating agents. After annealing, samples were quenched at RT, but some selected samples underwent a slow cooling inside the furnace. Some selected CMTS thin films were subjected to HCl etching (3% HCl, at 75°C for 10 minutes). Prototype devices were made with the architecture Mo/CMTS/CdS/i-ZnO/AZO/Al grid: CdS was deposited by chemical bath deposition, i-ZnO and AZO by sputtering and Al grid was thermally evaporated. Some selected devices were subjected to a thermal treatment at 260°C for 10 minutes on titanium hotplate. After measurements of photovoltaic performances, upper layers were removed and CMTS thin films were extensively studied employing the GI-XRD technique to determine the lattice constants as well as microstructural properties like microstrain and size of coherent scattering domains. These results of the evaluation of GI-XRD data and photovoltaic performances were correlated to precursor composition, cooling conditions after annealing and post deposition treatments (i.e. HCl etching of the absorber before CdS deposition and thermal treatment of the complete device). All CMTS thin films analyzed by GI-XRD exhibited stannite structure, as expected [2], with a very good crystalline quality. The impact of metal ratio in the solution of precursors was studied, keeping copper poor condi

Combining theoretical ab initio calculations with high-purity thin film sample synthesis and in situ measurements is a compelling way to bridge the gap in our understanding concerning hydrogen in metallic glasses, which is the primary work of this dissertation thesis. The main emphasis has been on how hydrogen affects the structure of metallic glasses, and how those changes influence not only the electronic properties of the amorphous metals but also their thermal stability. The real-space correlations in the form of the pair distribution functions in thin metallic films have primarily only been accessible through synchrotron radiation. An effective methodological procedure using laboratory-based x-ray sources is here brought forth, which, for the first time, can produce accessible and accurate pair distribution functions from thin films down to a thickness of 80 nm. The underpinning mechanisms behind the hydrogen-induced volume expansion of metallic glasses in the form of the dipole force tensor and an elastic hydrogen-hydrogen interaction were examined using in situ neutron reflectometry and first-principles calculations of expanding V80Zr20 amorphous structures. The dipole force tensor was concluded to be similar in magnitude to a mole-fraction-weighted sum of the ones found in hydrogen-contained vanadium and zirconium crystals, and the theoretical calculations demonstrated that it and the interaction energy varies with hydrogen concentration. The electronic structure of the metallic glass V80Zr20 was determined via hard x-ray photoemission spectrometry and confirmed by first-principles calculations to be modified by the presence of hydrogen, in which a collection of s-d hybridized states 7 eV below the Fermi level was formed. The changes closer to the Fermi level, together with the volume expansion, were via experiments and ab initio calculations established to cause a parabolic change in resistance and a strong wavelength dependence on the optical tr

Reuse and/or recycling of spent adsorbents is taking a central role in modern thinking and catalyzed carbonization is the way forward. Herein we explore the carbonization of adsorbed acetamiprid, in an inert atmosphere, as a way of recycling and producing nitrogen-rich carbon material for potential use in supercapacitors. Added value material and the reuse of the adsorbent were achieved by carbonization at 700 °C under argon. The formation of a nitrogen-doped carbon layer as an active material on the adsorbent, bonded through a C-Si linkage, has been conclusively verified through elemental composition quantification using XPS and EDX measurements. Two-stage catalytic decomposition and condensation of the adsorbed pesticide is followed by TGA and TPD-MS. Attained carbon-based materials give stable Faradaic capacitance with a slight dependency on the number of adsorbing cycles. Capacitance calculated with respect to the adlayer carbon material reaches values as high as 610 F g−1. Galvanostatic Charge/Discharge measurement confirmed the stability of explored materials with a slight increase in capacitance over 1000 cycles. The presented results envisage electroactive materials preparation from environmental pollutants, adding value to spent adsorbents.

The dynamics of cellular aggregates is driven by the interplay of mechanochemical processes and cellular activity. Although deterministic models may capture mechanical features, local chemical fluctuations trigger random cell responses, which determine the overall evolution. Incorporating stochastic cellular behavior in macroscopic models of biological media is a challenging task. Herein, we propose hybrid models for bacterial biofilm growth, which couple a two phase solid/fluid mixture description of mechanical and chemical fields with a dynamic energy budget-based cellular automata treatment of bacterial activity. Thin film and plate approximations for the relevant interfaces allow us to obtain numerical solutions exhibiting behaviors observed in experiments, such as accelerated spread due to water intake from the environment, wrinkle formation, undulated contour development, and the appearance of inhomogeneous distributions of differentiated bacteria performing varied tasks.

Biofilms are bacterial aggregates encased in a self-produced polymeric matrix which attach to moist surfaces and are extremely resistant to chemicals and antibiotics. Recent experiments show that their structure is defined by the interplay of elastic deformations and liquid transport within the biofilm, in response to the cellular activity and the interaction with the surrounding environment. We propose a poroelastic model for elastic deformation and liquid transport in three dimensional biofilms spreading on agar surfaces. The motion of the boundaries can be described by the combined use of Von Kármán type approximations for the agar/biofilm interface and thin film approximations for the biofilm/air interface. Bacterial activity informs the macroscopic continuous model through source terms and residual stresses, either phenomenological or derived from microscopic models. We present a procedure to estimate the structure of such residual stresses, based on a simple cellular automata description of bacterial activity. Inspired by image processing, we show that a filtering strategy effectively smooths out the rough tensors provided by the stochastic cellular automata rules, allowing us to insert them in the macroscopic model without numerical instability., This research has been supported by MINECO grants No. MTM2014-56948-C2-1-P, No. MTM2017-84446-C2-1-R and No. PRX18-00112.

A (Mo0.24Cr0.76)0.40Al0.32B0.28 thin film was deposited by direct current magnetron sputtering at 600 °C substrate temperature. Analysis by X-ray diffraction, energy-dispersive X-ray spectroscopy, elastic recoil detection analysis, and high-resolution scanning transmission electron microscopy revealed the formation of the previously unreported (Mo,Cr)2AlB2 MAB phase, along with Cr3AlB4, CrB4, and Mo, in good agreement with density functional theory (DFT) calculations. Hence, the MAB phase family in the Mo-Cr-Al-B system is extended by a novel, quaternary member.

Cadmium Selenide thin films were deposited on glass substrates and p-type silicon substrates using pulsed laser deposition technique (Nd: YAG laser). Some of these samples were exposed to different intervals (10,20,30,40) days of gamma radiation using a 226Ra source emitting 186 KeV ?-ray. For comparison purposes, the other diodes were kept without any irradiation. Results have shown all these thin films exhibit a hexagonal structure. However, there is a new (102-SiO2) peak appeared in the irradiated thin film pattern. The crystallite size of pristine and irradiated CdSe thin films were (26.9,25.8,28.4,35.3 and 22.2) nm respectively, whereas the average grain size of the pristine film was (112.3-29.24) nm whereas for the irradiated films (45.58-33.72) nm, (61.16-42.8) nm, (55.7-36.03) nm and (53.31-43.45) nm. Results also show that the band gap increased from 2.17eV for pristine thin films to 2.28, 2.45, 2.2, and 2.28 eV for the irradiated thin films. also, I-V characteristics show the dark current decreases for the irradiated thin films. The forward current under illumination increases when exposed to small gamma radiation values and then decreases with higher exposure values. In contrast, the reverse current increases with the irradiation.

The overexpression of folate receptors on cell surfaces is associated with abnormalities linked to epithelial cancers. This study reports on a capacitive biosensor that employs folic acid as a recognition molecule for the biosensing of folate receptors. The biosensor is composed of a thin film of Ti–W oxides conjugated with folic acid that serves as a working electrode in a three-electrode electrochemical cell configuration. The thin film of Ti–W oxides, featuring a mixture of TiO2 anatase and rutile phases, was fabricated using the pulsed laser deposition method and subsequently functionalized with folic acid. Characterization of the thin film before and after functionalization was conducted using AFM, XPS, and contact angle measurements. The functionalization study confirmed a stable bond between folic acid and the surface of the thin film. The interaction between the functionalized transducer and the folate receptor was investigated by determining the electrochemical capacitance using an electrochemical capacitance spectroscopy setup. Folate receptor recognition assays demonstrated that the biosensor response signal, or chemical hardness (in terms of electrochemical capacitance), is selective and directly proportional to the folate receptor concentration, with a limit of detection of 200 pM (0.2 nM). These findings are promising for the application of this detector in the recognition of folate receptors, particularly for point-of-care analysis.

Recent developments in Sb2Se3 van der Waals material as an absorber candidate for thin film photovoltaic applications have demonstrated the importance of surface management for improving the conversion efficiency of this technology. Sb2Se3 thin films' versatility in delivering good efficiencies in both superstrate and substrate configurations, coupled with a compatibility with various low-temperature deposition techniques (below 500 °C and often below 350 °C), makes them highly attractive for advanced photovoltaic applications. This study presents a comparative analysis of the most effective chemical etchings developed for related thin film chalcogenide technologies to identify and understand the most appropriate surface chemical treatments for Sb2Se3 in substrate configuration, synthesized using a sequential process at very low temperatures (320 °C). Eight different chemical etchings were tested and investigated, and the results show that only KCN-based solutions lead to an improvement in the solar cell's performance, primarily due to an increase in the fill factor. Surface analysis of the samples shows that KCN etching produces very Sb-rich surfaces that do not affect the properties of the bulk. It is proposed that this Sb-rich interface inverts the surface polarity, creating a "buried junction" with CdS, thereby explaining the improvement of the fill factor of the devices, as confirmed by device modeling. The results of this study underscore the importance of surface management in low-temperature synthesized Sb2Se3 absorbers, where Sb-rich interfaces are crucial for achieving high-efficiency devices. This research contributes to ongoing efforts to improve the performance of Sb2Se3 thin film photovoltaic technology and could pave the way for the development of more efficient solar cells with optimized interfaces.

Raman spectroscopy was employed to investigate nanometric thick films of the organic semiconductor 2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiophene, following a comprehensive vibrational characterization of the compound condensed phases at various excitation wavelengths. UV Raman excitation enabled the characterization of the thin films, revealing that the molecular orientation at the film/air interface is characterized by a different organization and/or a high degree of disorder compared to the bulk phase. The low penetration depth of the UV Raman excitation allows for the retrieval of this information, unlike the XRD data.

Combining theoretical ab initio calculations with high-purity thin film sample synthesis and in situ measurements is a compelling way to bridge the gap in our understanding concerning hydrogen in metallic glasses, which is the primary work of this dissertation thesis. The main emphasis has been on how hydrogen affects the structure of metallic glasses, and how those changes influence not only the electronic properties of the amorphous metals but also their thermal stability. The real-space correlations in the form of the pair distribution functions in thin metallic films have primarily only been accessible through synchrotron radiation. An effective methodological procedure using laboratory-based x-ray sources is here brought forth, which, for the first time, can produce accessible and accurate pair distribution functions from thin films down to a thickness of 80 nm. The underpinning mechanisms behind the hydrogen-induced volume expansion of metallic glasses in the form of the dipole force tensor and an elastic hydrogen-hydrogen interaction were examined using in situ neutron reflectometry and first-principles calculations of expanding V80Zr20 amorphous structures. The dipole force tensor was concluded to be similar in magnitude to a mole-fraction-weighted sum of the ones found in hydrogen-contained vanadium and zirconium crystals, and the theoretical calculations demonstrated that it and the interaction energy varies with hydrogen concentration. The electronic structure of the metallic glass V80Zr20 was determined via hard x-ray photoemission spectrometry and confirmed by first-principles calculations to be modified by the presence of hydrogen, in which a collection of s-d hybridized states 7 eV below the Fermi level was formed. The changes closer to the Fermi level, together with the volume expansion, were via experiments and ab initio calculations established to cause a parabolic change in resistance and a strong wavelength dependence on the optical tr

Cadmium Selenide thin films were deposited on glass substrates and p-type silicon substrates using pulsed laser deposition technique (Nd: YAG laser). Some of these samples were exposed to different intervals (10,20,30,40) days of gamma radiation using a 226Ra source emitting 186 KeV ?-ray. For comparison purposes, the other diodes were kept without any irradiation. Results have shown all these thin films exhibit a hexagonal structure. However, there is a new (102-SiO2) peak appeared in the irradiated thin film pattern. The crystallite size of pristine and irradiated CdSe thin films were (26.9,25.8,28.4,35.3 and 22.2) nm respectively, whereas the average grain size of the pristine film was (112.3-29.24) nm whereas for the irradiated films (45.58-33.72) nm, (61.16-42.8) nm, (55.7-36.03) nm and (53.31-43.45) nm. Results also show that the band gap increased from 2.17eV for pristine thin films to 2.28, 2.45, 2.2, and 2.28 eV for the irradiated thin films. also, I-V characteristics show the dark current decreases for the irradiated thin films. The forward current under illumination increases when exposed to small gamma radiation values and then decreases with higher exposure values. In contrast, the reverse current increases with the irradiation.

To celebrate the 10th anniversary of the journal Inorganics and its first Impact Factor (Clerivate Analytics), the “Inorganic Materials” section has taken the initiative to launch a Special Issue entitled “10th Anniversary of Inorganics: Inorganic Materials”. The recent and numerous public demonstrations in support of climate and ecological justice and the recent energetic crisis revealed the actual importance of technological sustainability. The “Inorganic Materials” section in Inorganics strongly supports a transition towards a 'green' and sustainable future based on renewable energy and with closed life cycles for all used material. Therefore, this Special Issue focuses on the sustainable production of inorganic materials following alternative ecofriendly methods. In particular, the development of new protocols and strategies for the reuse of materials is important in order to save minerals and raw materials and reduce the production of waste and pollution of the environment. The aim of this Special Issue is to increase the knowledge of the latest advances, highlight challenges, address unresolved issues, and provide evidence for newly emerging areas of interest involving the sustainable use of inorganic materials.

Cadmium Selenide thin films were deposited on glass substrates and p-type silicon substrates using pulsed laser deposition technique (Nd: YAG laser). Some of these samples were exposed to different intervals (10,20,30,40) days of gamma radiation using a 226Ra source emitting 186 KeV ?-ray. For comparison purposes, the other diodes were kept without any irradiation. Results have shown all these thin films exhibit a hexagonal structure. However, there is a new (102-SiO2) peak appeared in the irradiated thin film pattern. The crystallite size of pristine and irradiated CdSe thin films were (26.9,25.8,28.4,35.3 and 22.2) nm respectively, whereas the average grain size of the pristine film was (112.3-29.24) nm whereas for the irradiated films (45.58-33.72) nm, (61.16-42.8) nm, (55.7-36.03) nm and (53.31-43.45) nm. Results also show that the band gap increased from 2.17eV for pristine thin films to 2.28, 2.45, 2.2, and 2.28 eV for the irradiated thin films. also, I-V characteristics show the dark current decreases for the irradiated thin films. The forward current under illumination increases when exposed to small gamma radiation values and then decreases with higher exposure values. In contrast, the reverse current increases with the irradiation.

Combining theoretical ab initio calculations with high-purity thin film sample synthesis and in situ measurements is a compelling way to bridge the gap in our understanding concerning hydrogen in metallic glasses, which is the primary work of this dissertation thesis. The main emphasis has been on how hydrogen affects the structure of metallic glasses, and how those changes influence not only the electronic properties of the amorphous metals but also their thermal stability. The real-space correlations in the form of the pair distribution functions in thin metallic films have primarily only been accessible through synchrotron radiation. An effective methodological procedure using laboratory-based x-ray sources is here brought forth, which, for the first time, can produce accessible and accurate pair distribution functions from thin films down to a thickness of 80 nm. The underpinning mechanisms behind the hydrogen-induced volume expansion of metallic glasses in the form of the dipole force tensor and an elastic hydrogen-hydrogen interaction were examined using in situ neutron reflectometry and first-principles calculations of expanding V80Zr20 amorphous structures. The dipole force tensor was concluded to be similar in magnitude to a mole-fraction-weighted sum of the ones found in hydrogen-contained vanadium and zirconium crystals, and the theoretical calculations demonstrated that it and the interaction energy varies with hydrogen concentration. The electronic structure of the metallic glass V80Zr20 was determined via hard x-ray photoemission spectrometry and confirmed by first-principles calculations to be modified by the presence of hydrogen, in which a collection of s-d hybridized states 7 eV below the Fermi level was formed. The changes closer to the Fermi level, together with the volume expansion, were via experiments and ab initio calculations established to cause a parabolic change in resistance and a strong wavelength dependence on the optical tr

The fabrication of ultrathin metal films is decisive in enormous fields such as microelectronic devices, plasmonics, and biosciences. Prevalent lithographic methods were principally designed to form patterns on ultraflat semiconductor surfaces. However, high costs and intricate processes are needed to adapt these lithographic methods to emerging applications like flexible electronics fabrication. Over the past decades, soft lithography techniques and relevant microcontact and nanotransfer printing processes have rapidly developed and are widely utilized in large-area metal film patterning and transfer with high fidelity and nanoscale resolution. This chapter introduces advances that employ a stamp with specially tailored surface structures and chemistries to pattern ultrathin metal films on various substrates, including metals, semiconductors, and polymers. Critical steps such as metallization, surface treatment, film/substrate delamination, bonding mechanics, and high-throughput and precise contact printing processes will be discussed. Further, we overview the mechanical behaviors of metal films bonded on the elastomeric substrates.

Over recent decades, the scientific community has managed to make great progress in the theoretical investigation and practical characterization of bismuth ferrite thin films. However, there is still much work to be completed in the field of magnetic property analysis. Under a normal operational temperature, the ferroelectric properties of bismuth ferrite could overcome the magnetic properties due to the robustness of ferroelectric alignment. Therefore, investigation of the ferroelectric domain structure is crucial for functionality of any potential devices. This paper reports deposition and analyzation of bismuth ferrite thin films by Piezoresponse Force Microscopy (PFM) and XPS methods, aiming to provide a characterization of deposited thin films. In this paper, thin films of 100 nm thick bismuth ferrite material were prepared by pulsed laser deposition on multilayer substrates Pt/Ti(TiO2)/Si. Our main purpose for the PFM investigation in this paper is to determine which magnetic pattern will be observed on Pt/Ti/Si and Pt/TiO2/Si multilayer substrates under certain deposition parameters by utilizing the PLD method and using samples of a deposited thickness of 100 nm. It was also important to determine how strong the measured piezoelectric response will be, considering parameters mentioned previously. By establishing a clear understanding of how prepared thin films react on various biases, we have provided a foundation for future research involving the formation of piezoelectric grains, thickness-dependent domain wall formations, and the effect of the substrate topology on the magnetic properties of bismuth ferrite films.

Over recent decades, the scientific community has managed to make great progress in the theoretical investigation and practical characterization of bismuth ferrite thin films. However, there is still much work to be completed in the field of magnetic property analysis. Under a normal operational temperature, the ferroelectric properties of bismuth ferrite could overcome the magnetic properties due to the robustness of ferroelectric alignment. Therefore, investigation of the ferroelectric domain structure is crucial for functionality of any potential devices. This paper reports deposition and analyzation of bismuth ferrite thin films by Piezoresponse Force Microscopy (PFM) and XPS methods, aiming to provide a characterization of deposited thin films. In this paper, thin films of 100 nm thick bismuth ferrite material were prepared by pulsed laser deposition on multilayer substrates Pt/Ti(TiO2)/Si. Our main purpose for the PFM investigation in this paper is to determine which magnetic pattern will be observed on Pt/Ti/Si and Pt/TiO2/Si multilayer substrates under certain deposition parameters by utilizing the PLD method and using samples of a deposited thickness of 100 nm. It was also important to determine how strong the measured piezoelectric response will be, considering parameters mentioned previously. By establishing a clear understanding of how prepared thin films react on various biases, we have provided a foundation for future research involving the formation of piezoelectric grains, thickness-dependent domain wall formations, and the effect of the substrate topology on the magnetic properties of bismuth ferrite films.

Extracting mechanical data of thin films on rigid substrates using nanoindentation is compromised by the mechanical properties of underlying substrates, which may falsify the obtained results. With ongoing miniaturization, the substrate influence becomes more pronounced. In this study we present an experimental approach to extract the true Youngs modulus of crystalline-amorphous multilayers by means of nanoindentation. We used 1 µm thick multilayers comprised of amorphous CuZr and nanocrystalline Cu. All films were deposited onto two rigid substrate types with Youngs moduli below and above the ones expected for the deposits (film-to-substrate hardness and elastic moduli ratios between 0.3 to 1.1 and 0.6 to 1.5, respectively). Linear extrapolation of indentation data to zero indentation depth allows to precisely determine the real films Youngs modulus. Same investigations were performed on monolithic Cu and CuZr films of same thickness. While the hardness values change with the variation of the bilayer thickness of the multilayer structures, the Youngs modulus is not affected by the interfaces.

This study provides principles for designing new corrosion resistant high entropy alloys. The theoretical framework is a percolation model developed by Newman and Sieradzki that predicts the ability of an alloy to passivate, i.e., to form a protective surface oxide, based on its composition. Here, their model is applied to more complex materials than previously, namely amorphous CrFeNiTa and CrFeNiW alloys. Furthermore, the model describes a more complex passivation process: reforming the oxide layer above the transpassive potential of Cr. The model is used to predict the lowest concentration of Ta or W required to extend the passive region, yielding 11–14 at% Ta and 14–17 at% W. For CrFeNiTa, experiments reveal a threshold value of 13–15 at% Ta, which agrees with the prediction. For CrFeNiW, the experimentally determined threshold value is 37–45 at% W, far above the predicted value. Further investigations explore why the percolation model fails to describe the CrFeNiW system; key factors are the higher nobility and the pH sensitivity of W. These results demonstrate some limitations of the percolation model and offer complementary passivation criteria, while providing a design route for combining the properties of the 3d transition metal and refractory metal groups., Title in the list of papers of León Zendejas Medina's thesis: Extending the passive region of CrFeNi-based high entropy alloys by including Ta or W

This study provides principles for designing new corrosion resistant high entropy alloys. The theoretical framework is a percolation model developed by Newman and Sieradzki that predicts the ability of an alloy to passivate, i.e., to form a protective surface oxide, based on its composition. Here, their model is applied to more complex materials than previously, namely amorphous CrFeNiTa and CrFeNiW alloys. Furthermore, the model describes a more complex passivation process: reforming the oxide layer above the transpassive potential of Cr. The model is used to predict the lowest concentration of Ta or W required to extend the passive region, yielding 11–14 at% Ta and 14–17 at% W. For CrFeNiTa, experiments reveal a threshold value of 13–15 at% Ta, which agrees with the prediction. For CrFeNiW, the experimentally determined threshold value is 37–45 at% W, far above the predicted value. Further investigations explore why the percolation model fails to describe the CrFeNiW system; key factors are the higher nobility and the pH sensitivity of W. These results demonstrate some limitations of the percolation model and offer complementary passivation criteria, while providing a design route for combining the properties of the 3d transition metal and refractory metal groups., Title in the list of papers of León Zendejas Medina's thesis: Extending the passive region of CrFeNi-based high entropy alloys by including Ta or W

This study provides principles for designing new corrosion resistant high entropy alloys. The theoretical framework is a percolation model developed by Newman and Sieradzki that predicts the ability of an alloy to passivate, i.e., to form a protective surface oxide, based on its composition. Here, their model is applied to more complex materials than previously, namely amorphous CrFeNiTa and CrFeNiW alloys. Furthermore, the model describes a more complex passivation process: reforming the oxide layer above the transpassive potential of Cr. The model is used to predict the lowest concentration of Ta or W required to extend the passive region, yielding 11–14 at% Ta and 14–17 at% W. For CrFeNiTa, experiments reveal a threshold value of 13–15 at% Ta, which agrees with the prediction. For CrFeNiW, the experimentally determined threshold value is 37–45 at% W, far above the predicted value. Further investigations explore why the percolation model fails to describe the CrFeNiW system; key factors are the higher nobility and the pH sensitivity of W. These results demonstrate some limitations of the percolation model and offer complementary passivation criteria, while providing a design route for combining the properties of the 3d transition metal and refractory metal groups., Title in the list of papers of León Zendejas Medina's thesis: Extending the passive region of CrFeNi-based high entropy alloys by including Ta or W

We study magnetic multilayers, incorporating dilute ferromagnetic spacers between strongly-ferromagnetic layers exhibiting a proximity-enhanced magnetocaloric effect (MCE). Using magnetometry and direct measurements of the adiabatic temperature change based on a nanomembrane-calorimetry, we find that the MCE in the studied multilayer is indeed enhanced compared to that in the bulk spacer material. We develop a phenomenological numerical model of the studied trilayer and find that a long-range exchange interaction through the weakly-ferromagnetic spacer is required to adequately describe the magnetic and magnetocaloric properties of the system.

Impurities can be incorporated during thin film deposition, but also can originate from atmosphere exposure. As impurities can strongly affect the composition-structure-property relations in magnetron sputter deposited thin films, it is important to distinguish between both incorporation channels. Therefore, the impurity incorporation by atmosphere exposure into sputtered Mg, Al, and Ca thin films is systematically studied by a variation of the deposition temperatures and atmosphere exposure times. Deposition temperature variation results in morphological modifications explained by considering surface and bulk diffusion as well as grain boundary motion and evaporation. The film morphologies exhibiting the lowest oxygen concentrations, as measured by energy dispersive X-ray spectroscopy, are obtained at a homologous temperature of 0.4 for both Mg and Al thin films. For Ca, preventing atmosphere exposure is essential to hinder impurity incorporation: By comparing the impurity concentration in Al-capped and uncapped thin films, it is demonstrated that Ca thin films are locally protected by Al-capping, while Mg (and Al) form native passivation layers. Furthermore, it can be learned that the capping (or self-passivation) efficiency in terms of hindering further oxidation of the films in atmosphere is strongly dependent on the underlying morphology, which in turn is defined by the growth temperature.

In this study, the effect of AlN buffer layer structure and morphology on the GaN films deposited on Si (111) substrate by reactive DC magnetron sputtering have been studied. For structural and morphological characterization X-ray diffraction (XRD) and Scanning electron microscope (SEM) were used. It is found that AlN films without Al pre-deposition on Si have a poor crystalline quality due to the formation of an amorphous layer at Si/AlN interface. Various initial Al sputtering durations on Si substrate result in changing the AlN buffer layer’s quality and morphology and choosing proper deposition duration can improve AlN buffer layer and the subsequent GaN layer quality. It is found that more than 15 s Al pre deposition can suppress the amorphous layer formation and enhance the film quality. The Rocking curve FWHM for both in-plane and out-of-plane orientation decreased from 1.86 and 1.56 to 0.4 and 0.3 , respectively, by 4 minutes Al pre-deposition on Si, however, overlong Al deposition results in poor surface morphology. It is found that 15s Al deposition is sufficient to enhance the quality as well as keeping the surface relatively smooth. In addition, AlN films deposited at 1000 showed the best film quality. GaN films directly grown on Si showed a poor crystalline quality and surface morphology, improvement of quality and morphology was observed for GaN samples deposited on AlN buffer layer. Also, melt-back etching observed on the surface of GaN grown on Si without AlN buffer layer. It is found that duration of Al deposition has a significant effect on GaN surface morphology, Al layer deposition more than 15 s result in a rough surface for GaN films. With choosing the optimum duration of Al pre-deposition and proper growth temperature a good quality GaN with a smooth surface morphology can be produced.

Impurities can be incorporated during thin film deposition, but also can originate from atmosphere exposure. As impurities can strongly affect the composition-structure-property relations in magnetron sputter deposited thin films, it is important to distinguish between both incorporation channels. Therefore, the impurity incorporation by atmosphere exposure into sputtered Mg, Al, and Ca thin films is systematically studied by a variation of the deposition temperatures and atmosphere exposure times. Deposition temperature variation results in morphological modifications explained by considering surface and bulk diffusion as well as grain boundary motion and evaporation. The film morphologies exhibiting the lowest oxygen concentrations, as measured by energy dispersive X-ray spectroscopy, are obtained at a homologous temperature of 0.4 for both Mg and Al thin films. For Ca, preventing atmosphere exposure is essential to hinder impurity incorporation: By comparing the impurity concentration in Al-capped and uncapped thin films, it is demonstrated that Ca thin films are locally protected by Al-capping, while Mg (and Al) form native passivation layers. Furthermore, it can be learned that the capping (or self-passivation) efficiency in terms of hindering further oxidation of the films in atmosphere is strongly dependent on the underlying morphology, which in turn is defined by the growth temperature.

This study explores the influence of a 316L stainless steel substrate on the magnetron sputtering of the Cantor alloy CoCrFeMnNi at different substrate bias. The study was carried out on a polycrystalline 316L substrate where the growth behavior of the coating could be investigated on grains with different orientations. By combining electron backscatter diffraction (EBSD) before and after deposition and characterization of the same area, it was possible to determine growth behaviour and surface morphologies on individual substrate grains. No strong influence of the substrate was observed at a floating bias. At a bias of -100V, however, the coating was strongly influenced by the orientation of the individual substrate grains. Epitaxial coating grains with a smooth surface were observed on the [102]-oriented grains while a more columnar growth was observed on [111]-oriented grains. Furthermore, a small difference in growth rate was observed on different substrate orientations. The growth behaviour could be related to differences in surface energies and diffusion rates on different surface orientations.

This study provides principles for designing new corrosion resistant high entropy alloys. The theoretical framework is a percolation model developed by Newman and Sieradzki that predicts the ability of an alloy to passivate, i.e., to form a protective surface oxide, based on its composition. Here, their model is applied to more complex materials than previously, namely amorphous CrFeNiTa and CrFeNiW alloys. Furthermore, the model describes a more complex passivation process: reforming the oxide layer above the transpassive potential of Cr. The model is used to predict the lowest concentration of Ta or W required to extend the passive region, yielding 11–14 at% Ta and 14–17 at% W. For CrFeNiTa, experiments reveal a threshold value of 13–15 at% Ta, which agrees with the prediction. For CrFeNiW, the experimentally determined threshold value is 37–45 at% W, far above the predicted value. Further investigations explore why the percolation model fails to describe the CrFeNiW system; key factors are the higher nobility and the pH sensitivity of W. These results demonstrate some limitations of the percolation model and offer complementary passivation criteria, while providing a design route for combining the properties of the 3d transition metal and refractory metal groups., Title in the list of papers of León Zendejas Medina's thesis: Extending the passive region of CrFeNi-based high entropy alloys by including Ta or W

Impurities can be incorporated during thin film deposition, but also can originate from atmosphere exposure. As impurities can strongly affect the composition-structure-property relations in magnetron sputter deposited thin films, it is important to distinguish between both incorporation channels. Therefore, the impurity incorporation by atmosphere exposure into sputtered Mg, Al, and Ca thin films is systematically studied by a variation of the deposition temperatures and atmosphere exposure times. Deposition temperature variation results in morphological modifications explained by considering surface and bulk diffusion as well as grain boundary motion and evaporation. The film morphologies exhibiting the lowest oxygen concentrations, as measured by energy dispersive X-ray spectroscopy, are obtained at a homologous temperature of 0.4 for both Mg and Al thin films. For Ca, preventing atmosphere exposure is essential to hinder impurity incorporation: By comparing the impurity concentration in Al-capped and uncapped thin films, it is demonstrated that Ca thin films are locally protected by Al-capping, while Mg (and Al) form native passivation layers. Furthermore, it can be learned that the capping (or self-passivation) efficiency in terms of hindering further oxidation of the films in atmosphere is strongly dependent on the underlying morphology, which in turn is defined by the growth temperature.

Impurities can be incorporated during thin film deposition, but also can originate from atmosphere exposure. As impurities can strongly affect the composition-structure-property relations in magnetron sputter deposited thin films, it is important to distinguish between both incorporation channels. Therefore, the impurity incorporation by atmosphere exposure into sputtered Mg, Al, and Ca thin films is systematically studied by a variation of the deposition temperatures and atmosphere exposure times. Deposition temperature variation results in morphological modifications explained by considering surface and bulk diffusion as well as grain boundary motion and evaporation. The film morphologies exhibiting the lowest oxygen concentrations, as measured by energy dispersive X-ray spectroscopy, are obtained at a homologous temperature of 0.4 for both Mg and Al thin films. For Ca, preventing atmosphere exposure is essential to hinder impurity incorporation: By comparing the impurity concentration in Al-capped and uncapped thin films, it is demonstrated that Ca thin films are locally protected by Al-capping, while Mg (and Al) form native passivation layers. Furthermore, it can be learned that the capping (or self-passivation) efficiency in terms of hindering further oxidation of the films in atmosphere is strongly dependent on the underlying morphology, which in turn is defined by the growth temperature.

Glow and filamentary regimes of atmospheric pressure plasma-enhanced chemical vapor deposition in a planar dielectric barrier discharge configuration were compared for thin-film deposition from ethyl lactate (EL). EL decomposition in the plasma phase and thin-film composition were both characterized by Fourier- transform infrared spectroscopy. EL chemical bonds' concentration along the gas flow decreases progressively in the glow dielectric barrier discharge (GDBD), whereas it drastically oscillates in the filamentary dielectric barrier discharge (FDBD), with values higher than that of the initial mixture. EL decomposition route depends on the discharge regime, as the decrease of the concentration of the different investigated bonds is different for an identical amount of energy provided to EL molecules. CO2 is systematically formed reaching concentrations of 25 and 40 ppm, respectively, in FDBD and GDBD.

A hetero-bimetallic alkoxide CrAl3(OiPr)12 was synthesised through metathesis of achromium(III)chloride THF complex (CrCl3 . 3 THF) and 3 KAl(OiPr)4.It was used as a single sourceprecursor to make oxide powders and films with 1:3 chromium/aluminium compositionthrough sol-gel synthesis. The final materials obtained and heat-treated samples of these wasstudied with thermogravimetric analysis (TG), X-ray diffraction (XRD) and IR spectroscopy. Itwas found that the as synthesised material was amorphous and elementally homogeneousand could be described as hydrated (oxo)-hydroxide with some loosely bonded carbonate,but no organics remaining. Above 600 oC crystallisation starts and eventually splits into twocorundum structured phases starting around 800 oC. At 1400 oC, the phases had joined backtogether in accordance with the Cr-Al-O phase diagram. Scanning Transmission ElectronMicroscopy with Electron Dispersive X-ray (STEM-EDX) tomography showed that the powderswere homogenous up to 800 oC, while after heating to 1000 oC showed chromiumenrichment in some crystals. Gracing Incidence X-ray diffraction (GI-XRD) on spin-coated filmsshowed that epitaxial growth might be achieved based on -Al2O3 (0001) substrate. The results show that the synthesis of the precursor and subsequent oxides was successful andyielded highly homogeneous gels that could be converted into oxide at ca. 600 oC andsubsequently be phase separated through spinodal decomposition at 1000 oC. The next stepwould be to try the precursor in the industrially used chemical vapour deposition (CVD)method.

Over recent decades, the scientific community has managed to make great progress in the theoretical investigation and practical characterization of bismuth ferrite thin films. However, there is still much work to be completed in the field of magnetic property analysis. Under a normal operational temperature, the ferroelectric properties of bismuth ferrite could overcome the magnetic properties due to the robustness of ferroelectric alignment. Therefore, investigation of the ferroelectric domain structure is crucial for functionality of any potential devices. This paper reports deposition and analyzation of bismuth ferrite thin films by Piezoresponse Force Microscopy (PFM) and XPS methods, aiming to provide a characterization of deposited thin films. In this paper, thin films of 100 nm thick bismuth ferrite material were prepared by pulsed laser deposition on multilayer substrates Pt/Ti(TiO2)/Si. Our main purpose for the PFM investigation in this paper is to determine which magnetic pattern will be observed on Pt/Ti/Si and Pt/TiO2/Si multilayer substrates under certain deposition parameters by utilizing the PLD method and using samples of a deposited thickness of 100 nm. It was also important to determine how strong the measured piezoelectric response will be, considering parameters mentioned previously. By establishing a clear understanding of how prepared thin films react on various biases, we have provided a foundation for future research involving the formation of piezoelectric grains, thickness-dependent domain wall formations, and the effect of the substrate topology on the magnetic properties of bismuth ferrite films.

Over recent decades, the scientific community has managed to make great progress in the theoretical investigation and practical characterization of bismuth ferrite thin films. However, there is still much work to be completed in the field of magnetic property analysis. Under a normal operational temperature, the ferroelectric properties of bismuth ferrite could overcome the magnetic properties due to the robustness of ferroelectric alignment. Therefore, investigation of the ferroelectric domain structure is crucial for functionality of any potential devices. This paper reports deposition and analyzation of bismuth ferrite thin films by Piezoresponse Force Microscopy (PFM) and XPS methods, aiming to provide a characterization of deposited thin films. In this paper, thin films of 100 nm thick bismuth ferrite material were prepared by pulsed laser deposition on multilayer substrates Pt/Ti(TiO2)/Si. Our main purpose for the PFM investigation in this paper is to determine which magnetic pattern will be observed on Pt/Ti/Si and Pt/TiO2/Si multilayer substrates under certain deposition parameters by utilizing the PLD method and using samples of a deposited thickness of 100 nm. It was also important to determine how strong the measured piezoelectric response will be, considering parameters mentioned previously. By establishing a clear understanding of how prepared thin films react on various biases, we have provided a foundation for future research involving the formation of piezoelectric grains, thickness-dependent domain wall formations, and the effect of the substrate topology on the magnetic properties of bismuth ferrite films.

Over recent decades, the scientific community has managed to make great progress in the theoretical investigation and practical characterization of bismuth ferrite thin films. However, there is still much work to be completed in the field of magnetic property analysis. Under a normal operational temperature, the ferroelectric properties of bismuth ferrite could overcome the magnetic properties due to the robustness of ferroelectric alignment. Therefore, investigation of the ferroelectric domain structure is crucial for functionality of any potential devices. This paper reports deposition and analyzation of bismuth ferrite thin films by Piezoresponse Force Microscopy (PFM) and XPS methods, aiming to provide a characterization of deposited thin films. In this paper, thin films of 100 nm thick bismuth ferrite material were prepared by pulsed laser deposition on multilayer substrates Pt/Ti(TiO2)/Si. Our main purpose for the PFM investigation in this paper is to determine which magnetic pattern will be observed on Pt/Ti/Si and Pt/TiO2/Si multilayer substrates under certain deposition parameters by utilizing the PLD method and using samples of a deposited thickness of 100 nm. It was also important to determine how strong the measured piezoelectric response will be, considering parameters mentioned previously. By establishing a clear understanding of how prepared thin films react on various biases, we have provided a foundation for future research involving the formation of piezoelectric grains, thickness-dependent domain wall formations, and the effect of the substrate topology on the magnetic properties of bismuth ferrite films.

Over recent decades, the scientific community has managed to make great progress in the theoretical investigation and practical characterization of bismuth ferrite thin films. However, there is still much work to be completed in the field of magnetic property analysis. Under a normal operational temperature, the ferroelectric properties of bismuth ferrite could overcome the magnetic properties due to the robustness of ferroelectric alignment. Therefore, investigation of the ferroelectric domain structure is crucial for functionality of any potential devices. This paper reports deposition and analyzation of bismuth ferrite thin films by Piezoresponse Force Microscopy (PFM) and XPS methods, aiming to provide a characterization of deposited thin films. In this paper, thin films of 100 nm thick bismuth ferrite material were prepared by pulsed laser deposition on multilayer substrates Pt/Ti(TiO2)/Si. Our main purpose for the PFM investigation in this paper is to determine which magnetic pattern will be observed on Pt/Ti/Si and Pt/TiO2/Si multilayer substrates under certain deposition parameters by utilizing the PLD method and using samples of a deposited thickness of 100 nm. It was also important to determine how strong the measured piezoelectric response will be, considering parameters mentioned previously. By establishing a clear understanding of how prepared thin films react on various biases, we have provided a foundation for future research involving the formation of piezoelectric grains, thickness-dependent domain wall formations, and the effect of the substrate topology on the magnetic properties of bismuth ferrite films.

Thin film LiPON and LLTO are promising solid electrolyte candidates in the development of next generation batteries. These materials can be deposited via RF magnetron sputtering, which is a technique suitable for thin film mass production. In this work, the deposition conditions for LiPON and LLTO are optimized to improve film quality. The thickness of LiPON films is shown to be tunable with the approximation of deposition rate. LiPON films as thin as 325 nm are produced to exhibit sufficient ionic conductivity and low electronic conductivity. Strong electrochemical performance means LiPON can remain a cohesive film even at very thin scales. With this, LiPON has potential to improve volumetric energy density when implemented into thin film batteries. Bulk LLTO is characterized to relate ionic conductivity to Li amount, and the composition with highest ionic conductivity influences the choice of LLTO sputtering target. LLTO film deposition rate is studied as a function of both RF power and deposition pressure, and RF power is shown to have a much stronger effect on deposition rate. Film delamination issues are addressed by decreasing LLTO film thickness, and adhesion to the Si substrate is maintained during the post annealing process. EDS analysis yields the La/Ti ratios of LLTO films, illustrating changes in LLTO composition due to deposition pressure.

Lithium-ion batteries have been growing rapidly for the past few decades, finding applications in portable devices such as cell phones, and laptop computers. Recently, the surging demand for electric vehicles and grid storage necessitates the development of safer batteries that offer higher performance, longer life, and lower cost. Spinel-type LiNi0.5Mn1.5O4 (LNMO) stands out as a promising cathode material for 5 V-class Li-ion batteries enabling high energy density and low material costs. However, common carbonate-based liquid electrolytes suffer from oxidative decomposition under high voltage, resulting in continuous cell degradation. In contrast, certain solid-state electrolytes have a wide electrochemical stability range and can withstand the required oxidative potential. In this study, we test a thin-film battery comprising an LNMO cathode with a solid lithium phosphorus oxynitride (LiPON) electrolyte and characterized their interface before and after cycling. Utilizing Li metal as the anode, this system can deliver stable performance for 600 cycles with an average Coulombic efficiency exceeding 99%. Neutron depth profiling reveals a slight overlithiated layer at the interface prior to cycling, a result that is consistent with the excess charge capacity measured during the first cycle. Additionally, cryogenic electron microscopy indicates intimate contact between LNMO and LiPON without any noticeable structure or chemical composition evolution after extended cycling, underscoring the superior stability of LiPON against a high voltage cathode. These findings accelerate the commercialization of a high voltage cell with solid or liquid electrolytes.In addition to thin film batteries, the thin film platform of battery materials offers another potential application in the form of a resistive switching device for future computing. With conventional silicon-based memory devices approaching their quantum mechanical limits, it is imperative to seek new functional materi

The development of metals that can overcome the strength-ductility-weight trade-off has been an ongoing challenge in engineering for many decades. A promising option for making such materials are Metal matrix composites (MMCs). MMCs contain dispersions of reinforcement in the form of fibers, particles, or platelets that significantly improve their thermal, electrical, or mechanical performance. This dissertation focuses on reinforcement with two-dimensional (2D) materials due to their unprecedented mechanical properties. For instance, compared to steel, the most well-studied 2D material, graphene, is nearly forty times stronger (130 GPa) and five times stiffer (1 TPa). Examples of reinforcement by graphene have achieved increases in strength of 60% due to load transfer at the metal/graphene interface and dislocation blocking by the graphene. However, the superior mechanical properties of graphene are not fully transferred to the matrix in conventional MMCs, a phenomenon known as the "valley of death." In an effort to develop key insight into how the relationships between composite design, processing, structure, properties, and mechanics can be used to more effectively transfer the intrinsic mechanical properties of reinforcements to bulk composite materials, nanolayered composite systems made of Ni, Cu, and NiTi reinforced with graphene or 2D hexagonal boron nitride h-BN is studied using experimental techniques and molecular dynamics (MD) simulations.