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Artificial Recurrent Neural Networks are a powerful information processing abstraction, and Reservoir Computing provides an efficient strategy to build robust implementations by projecting external inputs into high dimensional dynamical system trajectories. In this paper, we propose an extension of the original approach, a local unsupervised learning mechanism we call Phase Transition Adaptation, designed to drive the system dynamics towards the `edge of stability'. Here, the complex behavior exhibited by the system elicits an enhancement in its overall computational capacity. We show experimentally that our approach consistently achieves its purpose over several datasets., Comment: Accepted at IJCNN 2021

This paper focuses on the affinities between Baron Hulot, one of the protagonists of Balzac's novel La Cousine Bette, and one of the main characters of À la recherche du temps perdu, Baron de Charlus, created by Marcel Proust. A first similarity between them had been noticed, in an allusive way, by Samuel Beckett, who in a letter to his friend McGreevy wrote: "I think that Charlus' elaboration owes a lot to Hulot". On the basis of this allusion, we aim, in particular, to analyse the process of physical and moral degradation that the two characters undergo throughout their lives; this process is motivated by the sexual obsession that characterizes them, and which leads them to commit morally reprehensible actions and to endanger their social position

To continuously improve the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs), innovative device architectures, gate stack engineering and mobility enhancement techniques are under investigation. In this framework, new physics-based models for Technology Computer-Aided-Design (TCAD) simulation tools are needed to accurately predict the performance of upcoming nanoscale devices and to provide guidelines for their optimization. In this thesis, advanced physically-based mobility models for ultrathin body (UTB) devices with either planar or vertical architectures such as single-gate silicon-on-insulator (SOI) field-effect transistors (FETs), double-gate FETs, FinFETs and silicon nanowire FETs, integrating strain technology and high-κ gate stacks are presented. The effective mobility of the two-dimensional electron/hole gas in a UTB FETs channel is calculated taking into account its tensorial nature and the quantization effects. All the scattering events relevant for thin silicon films and for high-κ dielectrics and metal gates have been addressed and modeled for UTB FETs on differently oriented substrates. The effects of mechanical stress on (100) and (110) silicon band structures have been modeled for a generic stress configuration. Performance will also derive from heterogeneity, coming from the increasing diversity of functions integrated on complementary metal-oxide-semiconductor (CMOS) platforms. For example, new architectural concepts are of interest not only to extend the FET scaling process, but also to develop innovative sensor applications. Benefiting from properties like large surface-to-volume ratio and extreme sensitivity to surface modifications, silicon-nanowire-based sensors are gaining special attention in research. In this thesis, a comprehensive analysis of the physical effects playing a role in the detection of gas molecules is carried out by TCAD simulations combined with interface characterization techniques. The complex i