Search

In this work, we report a self-powered quasi-solid-state photodetector (PD) device prepared from flexible two-dimensional (2D) nanocomposites of a zinc oxide nanowire (ZnO-NW) in various weight percents (5, 10, 30, 50%) and Ti3C2Tx (MXene) paper, constructed with manganese (Mn)-doped zinc oxide nanorods (ZnO NRs) using an ionic gel electrolyte and carbon paper. All PD performance tests revealed that 5% ZnO-MXene-based devices were superior to the other samples. The maximum detectivity of 1.44 x 10(13) Jones at 367 nm (0.1 mW cm(-2)) and zero bias was calculated for the 5% ZnO-MXene-based device. Additionally, a very high on/off ratio of nearly 10(6), which is approximately 35-fold higher than that of the 50% ZnO-MXene-based PDs, was achieved for 5% ZnO-MXene PD at a zero bias under 367 nm (2.52 mW cm(-2)) illumination. The rise time for this device was 9.25 ms. Furthermore, the PD device exhibited excellent stability by enduring 1000 s of light on/off cycles. As a result, a simple, compact, and cost-effective self-powered ZnO-NW:MXene-based PD configuration showed fast photoresponse and excellent detecting performance., Trkiye Bilimsel ve Teknolojik Arastirma Kurumu [122F390]; TUBITAK, N.D.S. and M.S. would like to acknowledge the partial financial support of TUBITAK under research contract number 122F390.

In this work, we report a self-powered quasi-solid-state photodetector (PD) device prepared from flexible two-dimensional (2D) nanocomposites of a zinc oxide nanowire (ZnO-NW) in various weight percents (5, 10, 30, 50%) and Ti3C2Tx (MXene) paper, constructed with manganese (Mn)-doped zinc oxide nanorods (ZnO NRs) using an ionic gel electrolyte and carbon paper. All PD performance tests revealed that 5% ZnO-MXene-based devices were superior to the other samples. The maximum detectivity of 1.44 x 10(13) Jones at 367 nm (0.1 mW cm(-2)) and zero bias was calculated for the 5% ZnO-MXene-based device. Additionally, a very high on/off ratio of nearly 10(6), which is approximately 35-fold higher than that of the 50% ZnO-MXene-based PDs, was achieved for 5% ZnO-MXene PD at a zero bias under 367 nm (2.52 mW cm(-2)) illumination. The rise time for this device was 9.25 ms. Furthermore, the PD device exhibited excellent stability by enduring 1000 s of light on/off cycles. As a result, a simple, compact, and cost-effective self-powered ZnO-NW:MXene-based PD configuration showed fast photoresponse and excellent detecting performance., Trkiye Bilimsel ve Teknolojik Arastirma Kurumu [122F390]; TUBITAK, N.D.S. and M.S. would like to acknowledge the partial financial support of TUBITAK under research contract number 122F390.

In this study, we investigate a Schottky junction based on solution-processed multilayered graphene (MLG). We present a rectifying device obtained with a straightforward approach, that is drop-casting a few microliters of MLG solution simultaneously onto Si, Si-SiO2 and Si-SiO2-Cr/Au surface. Monitoring the modulation of Schottky barrier height while operating in reverse bias, we study the behavior of such prepared MLG-Si/junction (MLG-Si/J) when exposed to oxidizing atmosphere, especially to nitrogen oxide (NO2). We finally compare the sensing behavior of MLG-Si/J at 1 ppm of NO2 with that of a chemiresistor-based on similarly prepared solution-processed MLG. Our study thus opens the path towards low-cost highly sensitive graphene-based heterojunctions advantageously fabricated without any complexity in the technological process., Electronic Instrumentation

In this study, we investigate a Schottky junction based on solution-processed multilayered graphene (MLG). We present a rectifying device obtained with a straightforward approach, that is drop-casting a few microliters of MLG solution simultaneously onto Si, Si-SiO2 and Si-SiO2-Cr/Au surface. Monitoring the modulation of Schottky barrier height while operating in reverse bias, we study the behavior of such prepared MLG-Si/junction (MLG-Si/J) when exposed to oxidizing atmosphere, especially to nitrogen oxide (NO2). We finally compare the sensing behavior of MLG-Si/J at 1 ppm of NO2 with that of a chemiresistor-based on similarly prepared solution-processed MLG. Our study thus opens the path towards low-cost highly sensitive graphene-based heterojunctions advantageously fabricated without any complexity in the technological process., Electronic Instrumentation

Graphitic carbon nitride based heterojunction photocatalysts have gained increasing attention in producing the clean energy source of hydrogen. Coupling carbon nitride (g-C3N4) with other semiconductor materials or metals as co-catalysts is considered as an effective strategy to overcome the drawbacks of g-C3N4 such as the quick recombination of photogenerated charges. In this review, the recent research advancements in the construction of g-C3N4-based heterojunctions as well as their different charge separation/transfer mechanisms will be systematically discussed, making special emphasis on the design and fabrication of type-II, Z-scheme, S-scheme and Schottky heterojunctions and their application towards H2 generation from water splitting. Finally, a summary and some crucial issues, which should be further resolved for developing advanced g-C3N4-based heterojunction photocatalysts, are presented.

Запропоновано структуру комірки пам’яті, в якій як елемент розв’язки, використовується тонкоплівковий польовий транзистор (ТПТ) з бар’єром Шотткі на базі аморфного напівпровідника (АН), а як перемикаючий елемент - плівка халькогенідного склоподібного напівпровідника. Розроблена фізична модель комірки пам’яті. Проведено дослідження залежності параметрів транзистора та комірки пам’яті від дози опромінення потоком нейтронів та  – квантів. Показано, що при зміні дози опромінення потоком нейтронів крутість стік-заслінної характеристики (СЗХ) зменшується на 10% при дозах порядку 1015 н/с, в той же час коефіцієнт передачі біполярного n-p-n транзистора зменшується на 20% вже при дозах 1013 н/c, що свідчить про значне підвищення радіаційної стійкості запропонованої комірки пам’яті. При опроміненні  – квантами в діапазоні до 2,6 Мрад  крутість СЗХ запропонованої структури змінюється лише на 10%. У випадку використання, як елемента розв’язки - ТПТ з ізольованим заслоном, крутість СЗХ зменшується на 50%. Показано, що струм запису інформації запропонованої структури при зміні дози потоку  – квантів до 2,6 Мрад змінюється приблизно на 10%, в той же час, у випадку застосування ТПТ з ізольованим заслоном, струм запису інформації змінюється на 50%. Проведене дослідження залежності струму заслону від дози опромінення  – квантами. При зміні дози опромінення від 0 до 2,6 Мрад струм заслону змінюється лише на 10%, що свідчить про високу стійкість запропонованої структури до дії проникної радіації.

A memory cell structure is proposed that uses a Schottky barrier thin film transistor based on an amorphous semiconductor as a junction element, and a chalcogenide glassy semiconductor film as a switching element. A physical storage cell model has been developed. The dependence of the transistor and memory cell parameters on the dose of neutron flux and γ - quanta was investigated. It is shown that when the dose of neutron irradiation is changed, the steepness of the drain-gate characteristic (DGC) decreases by 10% at a dose of the order of 1015 n/s, at the same time, the transfer coefficient of the bipolar n-p-n transistor decreases by 20% already at doses of 1013 n/s, indicating a significant increase in the radiation resistance of the proposed memory cell. In the case of irradiation with γ - quanta in the range up to 2.6 Mrad, the steepness of the DGC of the proposed structure changes by only 10%. When used as an isolation element, a field-effect transistor with an insulated gate, the slope of the DGC is reduced by 50%, that it is bad result. It is shown that the current of recording information of the proposed structure when changing the dose of γ - quantum flux to 2.6 Mrad changes by about 10%, at the same time, in the case of using a field-effect transistor with an isolated cover, the information recording current changes by 50%. The study of the dependence of the gate current on the dose of γ – quanta is showed. When the radiation dose changes from 0 to 2.6 Mrad, the gate current changes only by 10%, which indicates the high resistance of the proposed structure to the action of permeable radiation.

Silicon nanowire (SiNW) field-effect transistors (SiNWFETs) are of great potential as a high-sensitivity charge sensor. The signal-to-noise ratio (SNR) of an SiNWFET sensor is ultimately limited by the intrinsic device noise generated by carrier trapping/detrapping processes at the gate oxide/silicon interface. This carrier trapping/detrapping-induced noise can be significantly reduced by replacing the noisy oxide/silicon interface with a Schottky junction gate (SJG) on the top of the SiNW. In this paper, we present a tri-SJG SiNWFET (Tri-SJGFET) with the SJG formed on both the top surface and the two sidewalls of the SiNW so as to enhance the gate control over the SiNW channel. Both experiment and simulation confirm that the additional sidewall gates in a narrow Tri-SJGFET indeed can confine the conduction path within the bulk of the SiNW channel away from the interfaces and significantly improve the immunity to the traps at the bottom buried oxide/silicon interface. Therefore, the optimal low-frequency noise performance can be achieved without the need for any substrate bias. This new gating structure holds promises for further development of robust SiNWFET-based charge sensors with low noise and low operation voltage., Title in thesis list of papers: Low Noise Schottky Junction Tri-gate Silicon Nanowire Field-effect Transistor for Charge Sensing

Quantum dots are very important in modern technology, which is driven by decreasing machinery size, while enhancing performance. Quantum dots form an integral part of nanoparticles (NPs) with a particle size that varies between 2-10 nm. The preparation of these materials is very important, with structural, optical and morphological studies showing dependence on synthesis conditions. In this work, cadmium sulphide (CdS) NPs were prepared using the chemical precipitation method. To control the particle size, thioglycerol (TG) was used as a capping agent with particle size dependent on the TG concentration. Scanning electron microscope and transmission electron microscope investigations showed that agglomerated particles were formed due to the high surface energies that are associated with very small particles. In order to study the role of the reaction conditions on the stabilizing of the particle surface, the particles were prepared using two different solvents: water and ethanol. X-ray diffraction (XRD) data showed that the use of water solvent resulted in particles consisting of a mixed phases of wurtzite and cubic structures. The quantum confinement effect was first observed in the colour change of the prepared samples. In the absence of TG, the sample had an orange colour, however, by introducing 0.1 mL of TG, the colour of the particles turned yellow while at 0.8 mL of TG the particles had a whitish-lemon colour. This effect was confirmed by the blue shift to lower wavelengths of the absorbance spectra obtained with the ultraviolet-visible (UV-Vis) technique. The blue shift is associated with a decreasing particle size. The increased sulphur content with an increasing TG concentration also increased the photoluminescence (PL) recombination rate. Thus preparation of CdS NPs with the water solvent resulted in luminescence from green, yellow, and red emission. The annealing of the 0.3 mL sample resulted in sintering of the small particles making up bulk particles w, Department of Science and Technology (DST)

To complement scaling of field effect transistors, new device concepts were introduced recently. One such concept is the reconfigurable field effect transistor (RFET). These transistors are based on nickel silicide-Si-nickel silicide Schottky junctions and their polarity can be switched between p- and n- type at runtime by the application of an electrostatic potential [1]. Control over silicide length and phase is important for scaling and proper functioning of these devices [2]. NiSi2 is the desirable silicide phase as its metal work function aligns itself near mid bandgap of Si, which enables reconfigurability of the device [1, 3]. We report on fabrication and electrical characterization results of RFETs. Si nanowires (SiNWs) are fabricated on undoped silicon-on-insulator (SOI) substrates by a top-down process based on electron beam lithography and inductively coupled plasma etching. Then, Ni is placed at both ends of the SiNWs by metal evaporation and lift-off processes. Afterwards, flash lamp annealing (FLA) is performed for silicidation of the NWs. FLA has enabled better control over silicidation length since flash times are much shorter (of the order of milli-seconds) than rapid thermal annealing (RTA) times. Transmission electron microscopy (TEM) shows the formation of the desired NiSi2 phase near the silicide-Si interface. Electrical characterization of the devices with back gating shows ambipolar behaviour. For unipolar behaviour, top gates need to be fabricated, results of which will be presented at the conference.

We present results of our investigations on nickel (Ni) silicidation of top-down fabricated silicon nanowires (SiNWs). Control over the silicidation process is important for the applications of SiNWs in reconfigurable field effect transistors (RFETs). Silicidation is performed using a rapid thermal annealing (RTA) process on the SiNWs fabricated by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The effect of variations in crystallographic orientations of SiNWs and different NW designs on the silicidation process is studied. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) are done to study Ni diffusion, silicide phases and silicide-silicon interface. Control over the silicide phase is achieved together with atomically sharp interfaces between the silicide and silicon. We find that {111} interfaces are predominantly formed, which are energetically most favorable according to density functional theory calculations. However, control over the silicide length remains a challenge.

To complement scaling of field effect transistors, new device concepts were introduced recently. One such concept is the reconfigurable field effect transistor (RFET). These transistors are based on nickel silicide-Si-nickel silicide Schottky junctions and their polarity can be switched between p- and n- type at runtime by the application of an electrostatic potential [1]. Control over silicide length and phase is important for scaling and proper functioning of these devices [2]. NiSi2 is the desirable silicide phase as its metal work function aligns itself near mid bandgap of Si, which enables reconfigurability of the device [1, 3]. We report on fabrication and electrical characterization results of RFETs. Si nanowires (SiNWs) are fabricated on undoped silicon-on-insulator (SOI) substrates by a top-down process based on electron beam lithography and inductively coupled plasma etching. Then, Ni is placed at both ends of the SiNWs by metal evaporation and lift-off processes. Afterwards, flash lamp annealing (FLA) is performed for silicidation of the NWs. FLA has enabled better control over silicidation length since flash times are much shorter (of the order of milli-seconds) than rapid thermal annealing (RTA) times. Transmission electron microscopy (TEM) shows the formation of the desired NiSi2 phase near the silicide-Si interface. Electrical characterization of the devices with back gating shows ambipolar behaviour. For unipolar behaviour, top gates need to be fabricated, results of which will be presented at the conference.

Semiconductors have been successfully demonstrated as the electrolytes for solid oxide fuel cells (SOFCs) in recent years. Many such semiconductors have shown their potentials as a competent ionic conductor for fuel cell operation, indicated by the appreciable ionic conduction and electrochemical performance. In the present study, we depart from traditional electrolyte concept to introduce a new semiconductor electrolyte, Li-doped ZnO to low-operating-temperature SOFCs. The used material was synthesized via a co-precipitation method and investigated from phase structure, morphology and UV-vis absorption perspectives. Utilizing Li-doped ZnO as electrolyte layer, we found the corresponding fuel cell exhibited a remarkable maximum power density of 443 mW cm(-2) along with open circuit voltage (OCV) of 1.07 V at 550 degrees C, and represented a lower-temperature operation feasibility with power outputs of 138-165 mW cm(-2) at 425-450 degrees C. Besides, high ionic conductivities of 0.028-0.087 S cm(-1) and low activation energy of 0.5 eV were also found in the synthesized Li-doped ZnO at 425-550 degrees C. Our investigation in terms of electrochemical impedance spectra (EIS) analysis manifested that Li-doped ZnO as the electrolyte layer boosted the electrode reactions of the device, which resulted in rather small polarization resistances and eventually realized good low-temperature performances. Further study based on the rectification characteristic of Ni/Li-doped ZnO contact verified the Schottky junction formation of Li-doped ZnO with anodic Ni, which can avoid the underlying electronic short-circuiting problem. These findings show a profound significance of using doped semiconductor for the future exploitation of SOFC electrolytes., QC 20181217

Understanding the electronic structure and charge carrier dynamics of supported clusters is important due to their many potential applications in photochemistry and catalysis. In this investigation, photoemission spectroscopy, in conjunction with femtosecond extreme ultraviolet (XUV) laser pulses, is used to investigate the electronic structure and ultrafast charge carrier dynamics at a Si(100) surface decorated with Zn clusters. Static photoemission spectroscopy is used to investigate the changes in the electronic structure as the dimensionality of the Zn is increased from small clusters composed of a very few atoms to metallic Zn particles. Furthermore, femtosecond optical-pump XUV-probe photoemission spectroscopy is employed to induce a charge transfer from the p-Si(100) substrate to the Zn clusters and to measure in real time the charge trapping at the Zn cluster as well as the subsequent charge relaxation. The ultrafast charge carrier dynamics are also investigated for small clusters and metallic Zn particles. Significant transient charging of the Zn clusters after excitation of the Si(100) substrate by 800 nm light is observed for Zn coverages greater than 0.12 ML Zn, which coincides with the formation of a Schottky barrier at the interface between the Zn particle and the p-Si(100) substrate. The transient signals show that the charge trapping time at the Zn cluster varies with the cluster size, which is rationalized based on the electronic structure of the cluster as well as the band energy alignment at the Zn cluster-Si(100) junction.

After experimental discovery in 2004, graphene is one of the most extensively studied materials in last 15 years. The sp2 bonded carbon atoms in honeycomb geometry in the atomic thickness leads to use of graphene in many applications including but not limited to sensors, field effect transistor, batteries, photo detectors, super capacitors, diodes. In particular, the highly conductive, highly transparent (97.7%) and mechanical flexibility of graphene indicated its use as a transparent conductive electrode (TCE). As a new emerging material for TCE applications, the incorporation of graphene with well-studied silicon leads to a new photovoltaic area: Graphene/Silicon (Gr/Si) solar cell. Over the course of 8 years, the efficiency has been improved up to 17%. After a brief introduction in chapter 1 and 2, chapter 3 introduces a promising alternative as incorporation of two-dimensional materials for Gr/Si solar cell. It is shown that applying graphene oxide via a simple spin coating process increases the efficiency of solar cell by a factor of three. A detail analysis of factors that contributions PCE enhancement are discussed. This chapter highlights the use of graphene oxide as an antireflection coating in Gr/Si solar cell. In chapter 4, the highest efficiency Gr/Si solar cell is presented. Through a detail analysis and addressing the efficiency limiting parameters, a more effective doping along with an engineered design is discussed. The experimental studies and related discussions of the highest efficiency graphene/n-silicon (Gr/n-Si) solar cell is highlighted.In chapter 5, It is demonstrated that the modifying the work function of graphene through an n doping allows us to use graphene as an electron extraction layer. A detail analysis and effective doping methodologies yielded the highest efficiency Gr/p-Si solar cell obtained so far. In addition, it is demonstrated that the one of most critical aspect of Gr/Si solar cells, stability, can be address through the use

After experimental discovery in 2004, graphene is one of the most extensively studied materials in last 15 years. The sp2 bonded carbon atoms in honeycomb geometry in the atomic thickness leads to use of graphene in many applications including but not limited to sensors, field effect transistor, batteries, photo detectors, super capacitors, diodes. In particular, the highly conductive, highly transparent (97.7%) and mechanical flexibility of graphene indicated its use as a transparent conductive electrode (TCE). As a new emerging material for TCE applications, the incorporation of graphene with well-studied silicon leads to a new photovoltaic area: Graphene/Silicon (Gr/Si) solar cell. Over the course of 8 years, the efficiency has been improved up to 17%. After a brief introduction in chapter 1 and 2, chapter 3 introduces a promising alternative as incorporation of two-dimensional materials for Gr/Si solar cell. It is shown that applying graphene oxide via a simple spin coating process increases the efficiency of solar cell by a factor of three. A detail analysis of factors that contributions PCE enhancement are discussed. This chapter highlights the use of graphene oxide as an antireflection coating in Gr/Si solar cell. In chapter 4, the highest efficiency Gr/Si solar cell is presented. Through a detail analysis and addressing the efficiency limiting parameters, a more effective doping along with an engineered design is discussed. The experimental studies and related discussions of the highest efficiency graphene/n-silicon (Gr/n-Si) solar cell is highlighted.In chapter 5, It is demonstrated that the modifying the work function of graphene through an n doping allows us to use graphene as an electron extraction layer. A detail analysis and effective doping methodologies yielded the highest efficiency Gr/p-Si solar cell obtained so far. In addition, it is demonstrated that the one of most critical aspect of Gr/Si solar cells, stability, can be address through the use

Understanding the electronic structure and charge carrier dynamics of supported clusters is important due to their many potential applications in photochemistry and catalysis. In this investigation, photoemission spectroscopy, in conjunction with femtosecond extreme ultraviolet (XUV) laser pulses, is used to investigate the electronic structure and ultrafast charge carrier dynamics at a Si(100) surface decorated with Zn clusters. Static photoemission spectroscopy is used to investigate the changes in the electronic structure as the dimensionality of the Zn is increased from small clusters composed of a very few atoms to metallic Zn particles. Furthermore, femtosecond optical-pump XUV-probe photoemission spectroscopy is employed to induce a charge transfer from the p-Si(100) substrate to the Zn clusters and to measure in real time the charge trapping at the Zn cluster as well as the subsequent charge relaxation. The ultrafast charge carrier dynamics are also investigated for small clusters and metallic Zn particles. Significant transient charging of the Zn clusters after excitation of the Si(100) substrate by 800 nm light is observed for Zn coverages greater than 0.12 ML Zn, which coincides with the formation of a Schottky barrier at the interface between the Zn particle and the p-Si(100) substrate. The transient signals show that the charge trapping time at the Zn cluster varies with the cluster size, which is rationalized based on the electronic structure of the cluster as well as the band energy alignment at the Zn cluster-Si(100) junction.

A novel semiconductor-ionic La0.6Sr0.4Co0.2Fe0.8O3-delta (LSCF)-Sm/Ca co-doped CeO2 (SCDC) nanocomposite has been developed as a membrane, which is sandwiched between two layers of Ni0.8Co0.15Al0.05Li-oxide (NCAL) to construct semiconductor-ion membrane fuel cell (SIMFC). Such a device presented an open circuit voltage (OCV) above 1.0 V and maximum power density of 814 mW cm(-2) at 550 degrees C, which is much higher than 0.84 V and 300 mW cm(-2) for the fuel cell using the SCDC membrane. Moreover, the SIMFC has a relatively promising long-term stability, the voltage can maintain at 0.966 V for 60 hours without degradation during the fuel cells operation and the open-circuit voltage (OCV) can return to 1.06 V after long-term fuel cell operation. The introduction of LSCF electronic conductor into the membrane did not cause any short circuit but brought significant enhancement of fuel cell performances. The Schottky junction is proposed to prevent the internal electrons passing thus avoiding the device short circuiting problem.

A novel semiconductor-ionic La0.6Sr0.4Co0.2Fe0.8O3-delta (LSCF)-Sm/Ca co-doped CeO2 (SCDC) nanocomposite has been developed as a membrane, which is sandwiched between two layers of Ni0.8Co0.15Al0.05Li-oxide (NCAL) to construct semiconductor-ion membrane fuel cell (SIMFC). Such a device presented an open circuit voltage (OCV) above 1.0 V and maximum power density of 814 mW cm(-2) at 550 degrees C, which is much higher than 0.84 V and 300 mW cm(-2) for the fuel cell using the SCDC membrane. Moreover, the SIMFC has a relatively promising long-term stability, the voltage can maintain at 0.966 V for 60 hours without degradation during the fuel cells operation and the open-circuit voltage (OCV) can return to 1.06 V after long-term fuel cell operation. The introduction of LSCF electronic conductor into the membrane did not cause any short circuit but brought significant enhancement of fuel cell performances. The Schottky junction is proposed to prevent the internal electrons passing thus avoiding the device short circuiting problem., QC 20171024

Commercial double Perovskite Sr2Fe1.5Mo0.5O6-delta (SFM), a high performance and redox stable electrode material for solid oxide fuel cell (SOFC), has been used for the electrolyte (layer)-free fuel cell (EFFC) and also as the cathode for the electrolyte based SOFC in a comprehensive study. The EFFC with a homogeneous mixture of Ce0.8Sm0.2O2-delta (SDC) and SFM achieved a higher power density (841 mW cm(-2)) at 550 degrees C, while the SDC electrolyte based SOFC, using the SDC-SFM composite as cathode, just reached 326 mW cm(-2) at the same temperature. The crystal structure and the morphology of the SFM-SDC composite were characterized by X-ray diffraction analysis (XRD), and scanning electron microscope (SEM), respectively. The electrochemical impedance spectroscopy (EIS) results showed that the charge transfer resistance of EFFCs were much lower than that of the electrolyte-based SOFC. To illustrate the operating principle of EFFC, we also conducted the rectification characteristics test, which confirms the existence of a Schottky junction structure to avoid the internal electron short circuiting. This work demonstrated advantages of the semiconductor-ionic SDC-SFM material for advanced EFFCs., QC 20171102

Classical scaling down of CMOS technology is reaching its end in the next few years. To facilitate further the enhancement in the complexity and performance of electronic circuits without increasing the chip area, devices with new materials, new architectures, enhanced functionality and new computation principles have gained importance. Our work focuses on fabricating devices with new architectures and enhanced functionality i.e. devices which can be reconfigured as a p- or n-channel field effect transistor (FET). These reconfigurable FETs are based on Silicon (Si) nanowires (NWs), which are silicided at both ends to form Si-NiSi2-Si Schottky junctions. Formation of NiSi2 is a pre-requisite for proper functioning of these devices since fermi level of NiSi2 aligns itself near the mid-bandgap of Si, thereby enabling tuning of band by application of electrostatic potential for its function as a p/n FET [1]. Moreover, control over silicide length is also important to scale the Si channel and to have symmetric contacts on both sides of the nanowire [2]. These issues are the focus of our recent work. In this paper, we report on comparison between silicidation of undoped Si NWs using rapid thermal annealing (RTA) and flash lamp annealing (FLA). The nanowires are fabricated on silicon on insulator (SOI) substrates by a top down process based on electron beam lithography (EBL) and subsequent inductively coupled plasma (ICP) etching. Hydrogen silsesquioxane (HSQ), a negative tone EBL resist, is used to provide high quality sub-15nm lithographic nanowire patterns, which are transferred into SOI by optimised ICP etching based on C4F8/SF6/O2 mixed gas chemistry. Subsequently, nickel (Ni) is sputtered at lithographically defined areas followed by RTA, which yields atomically sharp NiSi2-Si Schottky junctions. However, the main drawback of this silicidation process is the poor control over Ni s

Classical scaling down of CMOS technology is reaching its end in the next few years. To facilitate further the enhancement in the complexity and performance of electronic circuits without increasing the chip area, devices with new materials, new architectures, enhanced functionality and new computation principles have gained importance. Our work focuses on fabricating devices with new architectures and enhanced functionality i.e. devices which can be reconfigured as a p- or n-channel field effect transistor (FET). These reconfigurable FETs are based on Silicon (Si) nanowires (NWs), which are silicided at both ends to form Si-NiSi2-Si Schottky junctions. Formation of NiSi2 is a pre-requisite for proper functioning of these devices since fermi level of NiSi2 aligns itself near the mid-bandgap of Si, thereby enabling tuning of band by application of electrostatic potential for its function as a p/n FET [1]. Moreover, control over silicide length is also important to scale the Si channel and to have symmetric contacts on both sides of the nanowire [2]. These issues are the focus of our recent work. In this paper, we report on comparison between silicidation of undoped Si NWs using rapid thermal annealing (RTA) and flash lamp annealing (FLA). The nanowires are fabricated on silicon on insulator (SOI) substrates by a top down process based on electron beam lithography (EBL) and subsequent inductively coupled plasma (ICP) etching. Hydrogen silsesquioxane (HSQ), a negative tone EBL resist, is used to provide high quality sub-15nm lithographic nanowire patterns, which are transferred into SOI by optimised ICP etching based on C4F8/SF6/O2 mixed gas chemistry. Subsequently, nickel (Ni) is sputtered at lithographically defined areas followed by RTA, which yields atomically sharp NiSi2-Si Schottky junctions. However, the main drawback of this silicidation process is the poor control over Ni s

Semiconductor industry reaches the end of physical scaling soon and it is expected that future development will be based on new concepts: (i) new materials (high-mobility channel materials accompanied by metal gates with high-k gate dielectrics), (ii) new architectures (e.g. 3D integration), (iii) new functionality (e.g. reconfigurability), (iv) new computation principles (e.g. spintronics, quantum computing), etc [1]. In our work we focus on new functionality, specifically reconfigurable logic. The most promising industry compatible hardware for this logic is silicon nanowire based Schottky junction FET [2]. However, NiSi2-Si Schottky junctions in axial heterostructures (metal/intrinsic silicon/metal) are still complex and detailed studies of these structures are essential. We report on heterostructure (NixSiy-Si) characterisation of reconfigurable, undoped silicon nanowire Schottky junction FETs. The nanowires are fabricated on silicon on insulator (SOI) substrates by electron beam lithography (EBL) using hydrogen silsesquioxane (HSQ), a negative-tone electron beam resist, followed by inductively-coupled plasma (ICP) etching. We produced silicon nanowires of 20 nm width and arrays of them with a pitch of ≈ 200 nm. Nickel was sputtered on the Si nanowires at lithographically defined areas followed by thermal annealing to create nickel-silicide Schottky junctions inside the nanowires, which also act as source-drain contacts. Silicidation was done on single nanowires and nanowire arrays with varying cross-sections and also for different annealing times. We investigated the corresponding devices using SEM and TEM concerning their morphology and silicidation and determined the necessary parameters to allow for a reproducible scaling of these structures. Furthermore, some cross-sections of nanowire samples were prepared by the standard FIB technique followed by low voltage FIB cleaning to preserve the crystal structure. We observed that the interface between the Ni sili

Semiconductor industry reaches the end of physical scaling soon and it is expected that future development will be based on new concepts: (i) new materials (high-mobility channel materials accompanied by metal gates with high-k gate dielectrics), (ii) new architectures (e.g. 3D integration), (iii) new functionality (e.g. reconfigurability), (iv) new computation principles (e.g. spintronics, quantum computing), etc [1]. In our work we focus on new functionality, specifically reconfigurable logic. The most promising industry compatible hardware for this logic is silicon nanowire based Schottky junction FET [2]. However, NiSi2-Si Schottky junctions in axial heterostructures (metal/intrinsic silicon/metal) are still complex and detailed studies of these structures are essential. We report on heterostructure (NixSiy-Si) characterisation of reconfigurable, undoped silicon nanowire Schottky junction FETs. The nanowires are fabricated on silicon on insulator (SOI) substrates by electron beam lithography (EBL) using hydrogen silsesquioxane (HSQ), a negative-tone electron beam resist, followed by inductively-coupled plasma (ICP) etching. We produced silicon nanowires of 20 nm width and arrays of them with a pitch of ≈ 200 nm. Nickel was sputtered on the Si nanowires at lithographically defined areas followed by thermal annealing to create nickel-silicide Schottky junctions inside the nanowires, which also act as source-drain contacts. Silicidation was done on single nanowires and nanowire arrays with varying cross-sections and also for different annealing times. We investigated the corresponding devices using SEM and TEM concerning their morphology and silicidation and determined the necessary parameters to allow for a reproducible scaling of these structures. Furthermore, some cross-sections of nanowire samples were prepared by the standard FIB technique followed by low voltage FIB cleaning to preserve the crystal structure. We observed that the interface between the Ni sili

Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.

The method of simulation for the DLTS signal is described for the electron traps having a single sharp energy level and/or a broadened energy level in the p+n (or schottky) junction. From the result of the simulation for the sharp level, the effects of the parameters used for the simulation on the shapes of DLTS signals are demonstrated. The temperature and the half width of the DLTS peak depend systematically on all the parameters, while the height of the peak depends only on the ratio t1/t2 of the sampling times. The experimental DLTS signals are obtained for the GaP Schottky junctions before and after electron irradiation. There are two kinds of the experimental DLTS peaks in the irradiated GaP, one is the narrow peak which can be reproduced by the simulated curve for the sharp level, and the other is the broad peak which can be reproduced by the composed simulation curve for the broadened level. The level broadening is estimated by the simulation to be 0.134 eV for the defect introduced by the electron irradiation at 10MeV. It is suggested that the simple and very complex defects coexist in the irradiated GaP.

Tato práce se zabývá přípravou a charakterizací Schottkyho solárních článků s přechodem grafen/křemík. Pro tuto studii byla navržena a vyrobena aparatura pro měření I-V charakteristik solárního článku. Rozhraní grafen/křemík bylo dále modifikováno nanokrystaly galium nitridu a byl studován vliv těchto krystalů na vlastnosti solárního článku., This bachelor thesis deals with fabrication and characterization of Schottky solar cells with graphene/silicon junction. For this study, the I-V characteristic measuring device was designed and assembled. Also, the graphene/silicon junction was modified by GaN nanocrystals and properties of such a solar cell was studied.

Táto bakalárska práca sa zameriava na štúdium rozhrania grafén/kremík nachádzajúcom sa na solárnom článku s grafénovou vrstvou. Toto rozhranie bolo študované pomocou metódy EBIC a Ramanovej spektroskopie. Solárne články s grafénovou vrstvou boli vyrobené použitím elektrónovej litografie, chemického leptania a grafénu vyrobeného metódou CVD. Práca popisuje výrobu solárnych článkov s grafénovou vrstvou, metódu EBIC meranú pomocou SEM-u a analýzu zmien rozhrania grafén/kremík zapríčinených osvietením elektrónovým lúčom pomocou Ramanovej spektroskopie. V teoretickej časti je popísaný p-n prechod a Schottkyho prechod na solárnom článku, grafén a jeho výroba, ako aj základy metódy EBIC., This bachelor thesis is dedicated to study of interface graphene-on-silicon located on solar cell with graphene layer. The interface was studied by EBIC method and Raman spectroscopy. Solar cells with graphene sheet was fabricated using electron litography, chemical etching and graphene made by CVD method. The thesis describes fabrication of solar cells with graphene layer, method EBIC measured on SEM and analysis of changes graphene-on-silicon interface caused by enlightenment electron beam by Raman spectroscopy. In theorethical part is described p-n junction and Schottky junction of solar cell, graphene and its fabrication, as well as EBIC method fundamentals.

Obsahem této bakalářské práce je výroba, charakterizace a úprava Schottkyho solárních článků s rozhraním grafen-Si. Nanesením grafenu vyrobeného metodou CVD na křemíkový substrát s elektrodami bylo vytvořeno základní Schottkyho rozhraní solárního článku. Toto rozhraní grafen-Si bylo poté modifikováno žíháním v UHV a byla stanovena závislost účinnosti na teplotě. Dále byly studovány vlivy atomu galia na Schottkyho přechod. Proměřením voltampérových charakteristik byla srovnána účinnost takto vyrobených a upravených článků, načež byla provedena analýza ochuzené zóny Schottkyho přechodu pomocí metody X-EBIC., Main focus of this bachelor thesis is on fabrication, characterization and modification of graphene-on-silicon Schottky solar cells. By transfering CVD graphene onto silicon wafer with electrodes, a basic Schottky junction was created. The junction was then modified by annealing in UHV chamber as well as by gallium deposition. Information about power conversion efficiency of such Schottky solar cells was then obtained by IV measurement. Schottky junction itself was analyzed using X-EBIC method.

Tato práce se zabývá přípravou a charakterizací Schottkyho solárních článků s přechodem grafen/křemík. Pro tuto studii byla navržena a vyrobena aparatura pro měření I-V charakteristik solárního článku. Rozhraní grafen/křemík bylo dále modifikováno nanokrystaly galium nitridu a byl studován vliv těchto krystalů na vlastnosti solárního článku., This bachelor thesis deals with fabrication and characterization of Schottky solar cells with graphene/silicon junction. For this study, the I-V characteristic measuring device was designed and assembled. Also, the graphene/silicon junction was modified by GaN nanocrystals and properties of such a solar cell was studied.

Obsahem této bakalářské práce je výroba, charakterizace a úprava Schottkyho solárních článků s rozhraním grafen-Si. Nanesením grafenu vyrobeného metodou CVD na křemíkový substrát s elektrodami bylo vytvořeno základní Schottkyho rozhraní solárního článku. Toto rozhraní grafen-Si bylo poté modifikováno žíháním v UHV a byla stanovena závislost účinnosti na teplotě. Dále byly studovány vlivy atomu galia na Schottkyho přechod. Proměřením voltampérových charakteristik byla srovnána účinnost takto vyrobených a upravených článků, načež byla provedena analýza ochuzené zóny Schottkyho přechodu pomocí metody X-EBIC., Main focus of this bachelor thesis is on fabrication, characterization and modification of graphene-on-silicon Schottky solar cells. By transfering CVD graphene onto silicon wafer with electrodes, a basic Schottky junction was created. The junction was then modified by annealing in UHV chamber as well as by gallium deposition. Information about power conversion efficiency of such Schottky solar cells was then obtained by IV measurement. Schottky junction itself was analyzed using X-EBIC method.

Tato práce se zabývá výrobou a charakterizací Schottkyho solárního článku na rozhraní grafen/křemík. Schottkyho solární články byly vyrobeny s přední sběrnou elektrodou ze zlata, stříbra a uhlíku. Na rozhraní grafen/křemík Schottkyho solárního článku byla dále nadeponována mezivrstva Al2O3 resp. SiO2. Za účelem I-V charakterizace vyrobených Schottkyho solárních článků byla sestavena měřicí aparatura., This diploma thesis concerns itself with fabrication and characterization of Schottky solar cell on the graphene/silicon interface. Schottky solar cells were manufactured using a front collector electrode from gold, silver and carbon. On the graphene/silicon interface of the Schottky solar cell an interlayer of Al2O3 or SiO2. For the purpose of IV characterization of the manufactured Schottky solar cell a measuring apparatus was assembled.

Tato práce se zabývá výrobou a charakterizací Schottkyho solárního článku na rozhraní grafen/křemík. Schottkyho solární články byly vyrobeny s přední sběrnou elektrodou ze zlata, stříbra a uhlíku. Na rozhraní grafen/křemík Schottkyho solárního článku byla dále nadeponována mezivrstva Al2O3 resp. SiO2. Za účelem I-V charakterizace vyrobených Schottkyho solárních článků byla sestavena měřicí aparatura., This diploma thesis concerns itself with fabrication and characterization of Schottky solar cell on the graphene/silicon interface. Schottky solar cells were manufactured using a front collector electrode from gold, silver and carbon. On the graphene/silicon interface of the Schottky solar cell an interlayer of Al2O3 or SiO2. For the purpose of IV characterization of the manufactured Schottky solar cell a measuring apparatus was assembled.

Táto bakalárska práca sa zameriava na štúdium rozhrania grafén/kremík nachádzajúcom sa na solárnom článku s grafénovou vrstvou. Toto rozhranie bolo študované pomocou metódy EBIC a Ramanovej spektroskopie. Solárne články s grafénovou vrstvou boli vyrobené použitím elektrónovej litografie, chemického leptania a grafénu vyrobeného metódou CVD. Práca popisuje výrobu solárnych článkov s grafénovou vrstvou, metódu EBIC meranú pomocou SEM-u a analýzu zmien rozhrania grafén/kremík zapríčinených osvietením elektrónovým lúčom pomocou Ramanovej spektroskopie. V teoretickej časti je popísaný p-n prechod a Schottkyho prechod na solárnom článku, grafén a jeho výroba, ako aj základy metódy EBIC., This bachelor thesis is dedicated to study of interface graphene-on-silicon located on solar cell with graphene layer. The interface was studied by EBIC method and Raman spectroscopy. Solar cells with graphene sheet was fabricated using electron litography, chemical etching and graphene made by CVD method. The thesis describes fabrication of solar cells with graphene layer, method EBIC measured on SEM and analysis of changes graphene-on-silicon interface caused by enlightenment electron beam by Raman spectroscopy. In theorethical part is described p-n junction and Schottky junction of solar cell, graphene and its fabrication, as well as EBIC method fundamentals.

Tato práce se zabývá výrobou a charakterizací Schottkyho solárního článku na rozhraní grafen/křemík. Schottkyho solární články byly vyrobeny s přední sběrnou elektrodou ze zlata, stříbra a uhlíku. Na rozhraní grafen/křemík Schottkyho solárního článku byla dále nadeponována mezivrstva Al2O3 resp. SiO2. Za účelem I-V charakterizace vyrobených Schottkyho solárních článků byla sestavena měřicí aparatura., This diploma thesis concerns itself with fabrication and characterization of Schottky solar cell on the graphene/silicon interface. Schottky solar cells were manufactured using a front collector electrode from gold, silver and carbon. On the graphene/silicon interface of the Schottky solar cell an interlayer of Al2O3 or SiO2. For the purpose of IV characterization of the manufactured Schottky solar cell a measuring apparatus was assembled.

Obsahem této bakalářské práce je výroba, charakterizace a úprava Schottkyho solárních článků s rozhraním grafen-Si. Nanesením grafenu vyrobeného metodou CVD na křemíkový substrát s elektrodami bylo vytvořeno základní Schottkyho rozhraní solárního článku. Toto rozhraní grafen-Si bylo poté modifikováno žíháním v UHV a byla stanovena závislost účinnosti na teplotě. Dále byly studovány vlivy atomu galia na Schottkyho přechod. Proměřením voltampérových charakteristik byla srovnána účinnost takto vyrobených a upravených článků, načež byla provedena analýza ochuzené zóny Schottkyho přechodu pomocí metody X-EBIC., Main focus of this bachelor thesis is on fabrication, characterization and modification of graphene-on-silicon Schottky solar cells. By transfering CVD graphene onto silicon wafer with electrodes, a basic Schottky junction was created. The junction was then modified by annealing in UHV chamber as well as by gallium deposition. Information about power conversion efficiency of such Schottky solar cells was then obtained by IV measurement. Schottky junction itself was analyzed using X-EBIC method.

Táto bakalárska práca sa zameriava na štúdium rozhrania grafén/kremík nachádzajúcom sa na solárnom článku s grafénovou vrstvou. Toto rozhranie bolo študované pomocou metódy EBIC a Ramanovej spektroskopie. Solárne články s grafénovou vrstvou boli vyrobené použitím elektrónovej litografie, chemického leptania a grafénu vyrobeného metódou CVD. Práca popisuje výrobu solárnych článkov s grafénovou vrstvou, metódu EBIC meranú pomocou SEM-u a analýzu zmien rozhrania grafén/kremík zapríčinených osvietením elektrónovým lúčom pomocou Ramanovej spektroskopie. V teoretickej časti je popísaný p-n prechod a Schottkyho prechod na solárnom článku, grafén a jeho výroba, ako aj základy metódy EBIC., This bachelor thesis is dedicated to study of interface graphene-on-silicon located on solar cell with graphene layer. The interface was studied by EBIC method and Raman spectroscopy. Solar cells with graphene sheet was fabricated using electron litography, chemical etching and graphene made by CVD method. The thesis describes fabrication of solar cells with graphene layer, method EBIC measured on SEM and analysis of changes graphene-on-silicon interface caused by enlightenment electron beam by Raman spectroscopy. In theorethical part is described p-n junction and Schottky junction of solar cell, graphene and its fabrication, as well as EBIC method fundamentals.

Tato práce se zabývá přípravou a charakterizací Schottkyho solárních článků s přechodem grafen/křemík. Pro tuto studii byla navržena a vyrobena aparatura pro měření I-V charakteristik solárního článku. Rozhraní grafen/křemík bylo dále modifikováno nanokrystaly galium nitridu a byl studován vliv těchto krystalů na vlastnosti solárního článku., This bachelor thesis deals with fabrication and characterization of Schottky solar cells with graphene/silicon junction. For this study, the I-V characteristic measuring device was designed and assembled. Also, the graphene/silicon junction was modified by GaN nanocrystals and properties of such a solar cell was studied.

Obsahem této bakalářské práce je výroba, charakterizace a úprava Schottkyho solárních článků s rozhraním grafen-Si. Nanesením grafenu vyrobeného metodou CVD na křemíkový substrát s elektrodami bylo vytvořeno základní Schottkyho rozhraní solárního článku. Toto rozhraní grafen-Si bylo poté modifikováno žíháním v UHV a byla stanovena závislost účinnosti na teplotě. Dále byly studovány vlivy atomu galia na Schottkyho přechod. Proměřením voltampérových charakteristik byla srovnána účinnost takto vyrobených a upravených článků, načež byla provedena analýza ochuzené zóny Schottkyho přechodu pomocí metody X-EBIC., Main focus of this bachelor thesis is on fabrication, characterization and modification of graphene-on-silicon Schottky solar cells. By transfering CVD graphene onto silicon wafer with electrodes, a basic Schottky junction was created. The junction was then modified by annealing in UHV chamber as well as by gallium deposition. Information about power conversion efficiency of such Schottky solar cells was then obtained by IV measurement. Schottky junction itself was analyzed using X-EBIC method.

Táto bakalárska práca sa zameriava na štúdium rozhrania grafén/kremík nachádzajúcom sa na solárnom článku s grafénovou vrstvou. Toto rozhranie bolo študované pomocou metódy EBIC a Ramanovej spektroskopie. Solárne články s grafénovou vrstvou boli vyrobené použitím elektrónovej litografie, chemického leptania a grafénu vyrobeného metódou CVD. Práca popisuje výrobu solárnych článkov s grafénovou vrstvou, metódu EBIC meranú pomocou SEM-u a analýzu zmien rozhrania grafén/kremík zapríčinených osvietením elektrónovým lúčom pomocou Ramanovej spektroskopie. V teoretickej časti je popísaný p-n prechod a Schottkyho prechod na solárnom článku, grafén a jeho výroba, ako aj základy metódy EBIC., This bachelor thesis is dedicated to study of interface graphene-on-silicon located on solar cell with graphene layer. The interface was studied by EBIC method and Raman spectroscopy. Solar cells with graphene sheet was fabricated using electron litography, chemical etching and graphene made by CVD method. The thesis describes fabrication of solar cells with graphene layer, method EBIC measured on SEM and analysis of changes graphene-on-silicon interface caused by enlightenment electron beam by Raman spectroscopy. In theorethical part is described p-n junction and Schottky junction of solar cell, graphene and its fabrication, as well as EBIC method fundamentals.

Tato práce se zabývá přípravou a charakterizací Schottkyho solárních článků s přechodem grafen/křemík. Pro tuto studii byla navržena a vyrobena aparatura pro měření I-V charakteristik solárního článku. Rozhraní grafen/křemík bylo dále modifikováno nanokrystaly galium nitridu a byl studován vliv těchto krystalů na vlastnosti solárního článku., This bachelor thesis deals with fabrication and characterization of Schottky solar cells with graphene/silicon junction. For this study, the I-V characteristic measuring device was designed and assembled. Also, the graphene/silicon junction was modified by GaN nanocrystals and properties of such a solar cell was studied.

Tato práce se zabývá přípravou a charakterizací Schottkyho solárních článků s přechodem grafen/křemík. Pro tuto studii byla navržena a vyrobena aparatura pro měření I-V charakteristik solárního článku. Rozhraní grafen/křemík bylo dále modifikováno nanokrystaly galium nitridu a byl studován vliv těchto krystalů na vlastnosti solárního článku., This bachelor thesis deals with fabrication and characterization of Schottky solar cells with graphene/silicon junction. For this study, the I-V characteristic measuring device was designed and assembled. Also, the graphene/silicon junction was modified by GaN nanocrystals and properties of such a solar cell was studied.

Obsahem této bakalářské práce je výroba, charakterizace a úprava Schottkyho solárních článků s rozhraním grafen-Si. Nanesením grafenu vyrobeného metodou CVD na křemíkový substrát s elektrodami bylo vytvořeno základní Schottkyho rozhraní solárního článku. Toto rozhraní grafen-Si bylo poté modifikováno žíháním v UHV a byla stanovena závislost účinnosti na teplotě. Dále byly studovány vlivy atomu galia na Schottkyho přechod. Proměřením voltampérových charakteristik byla srovnána účinnost takto vyrobených a upravených článků, načež byla provedena analýza ochuzené zóny Schottkyho přechodu pomocí metody X-EBIC., Main focus of this bachelor thesis is on fabrication, characterization and modification of graphene-on-silicon Schottky solar cells. By transfering CVD graphene onto silicon wafer with electrodes, a basic Schottky junction was created. The junction was then modified by annealing in UHV chamber as well as by gallium deposition. Information about power conversion efficiency of such Schottky solar cells was then obtained by IV measurement. Schottky junction itself was analyzed using X-EBIC method.

Tato práce se zabývá výrobou a charakterizací Schottkyho solárního článku na rozhraní grafen/křemík. Schottkyho solární články byly vyrobeny s přední sběrnou elektrodou ze zlata, stříbra a uhlíku. Na rozhraní grafen/křemík Schottkyho solárního článku byla dále nadeponována mezivrstva Al2O3 resp. SiO2. Za účelem I-V charakterizace vyrobených Schottkyho solárních článků byla sestavena měřicí aparatura., This diploma thesis concerns itself with fabrication and characterization of Schottky solar cell on the graphene/silicon interface. Schottky solar cells were manufactured using a front collector electrode from gold, silver and carbon. On the graphene/silicon interface of the Schottky solar cell an interlayer of Al2O3 or SiO2. For the purpose of IV characterization of the manufactured Schottky solar cell a measuring apparatus was assembled.

Obsahem této bakalářské práce je výroba, charakterizace a úprava Schottkyho solárních článků s rozhraním grafen-Si. Nanesením grafenu vyrobeného metodou CVD na křemíkový substrát s elektrodami bylo vytvořeno základní Schottkyho rozhraní solárního článku. Toto rozhraní grafen-Si bylo poté modifikováno žíháním v UHV a byla stanovena závislost účinnosti na teplotě. Dále byly studovány vlivy atomu galia na Schottkyho přechod. Proměřením voltampérových charakteristik byla srovnána účinnost takto vyrobených a upravených článků, načež byla provedena analýza ochuzené zóny Schottkyho přechodu pomocí metody X-EBIC., Main focus of this bachelor thesis is on fabrication, characterization and modification of graphene-on-silicon Schottky solar cells. By transfering CVD graphene onto silicon wafer with electrodes, a basic Schottky junction was created. The junction was then modified by annealing in UHV chamber as well as by gallium deposition. Information about power conversion efficiency of such Schottky solar cells was then obtained by IV measurement. Schottky junction itself was analyzed using X-EBIC method.

Táto bakalárska práca sa zameriava na štúdium rozhrania grafén/kremík nachádzajúcom sa na solárnom článku s grafénovou vrstvou. Toto rozhranie bolo študované pomocou metódy EBIC a Ramanovej spektroskopie. Solárne články s grafénovou vrstvou boli vyrobené použitím elektrónovej litografie, chemického leptania a grafénu vyrobeného metódou CVD. Práca popisuje výrobu solárnych článkov s grafénovou vrstvou, metódu EBIC meranú pomocou SEM-u a analýzu zmien rozhrania grafén/kremík zapríčinených osvietením elektrónovým lúčom pomocou Ramanovej spektroskopie. V teoretickej časti je popísaný p-n prechod a Schottkyho prechod na solárnom článku, grafén a jeho výroba, ako aj základy metódy EBIC., This bachelor thesis is dedicated to study of interface graphene-on-silicon located on solar cell with graphene layer. The interface was studied by EBIC method and Raman spectroscopy. Solar cells with graphene sheet was fabricated using electron litography, chemical etching and graphene made by CVD method. The thesis describes fabrication of solar cells with graphene layer, method EBIC measured on SEM and analysis of changes graphene-on-silicon interface caused by enlightenment electron beam by Raman spectroscopy. In theorethical part is described p-n junction and Schottky junction of solar cell, graphene and its fabrication, as well as EBIC method fundamentals.

Tato práce se zabývá výrobou a charakterizací Schottkyho solárního článku na rozhraní grafen/křemík. Schottkyho solární články byly vyrobeny s přední sběrnou elektrodou ze zlata, stříbra a uhlíku. Na rozhraní grafen/křemík Schottkyho solárního článku byla dále nadeponována mezivrstva Al2O3 resp. SiO2. Za účelem I-V charakterizace vyrobených Schottkyho solárních článků byla sestavena měřicí aparatura., This diploma thesis concerns itself with fabrication and characterization of Schottky solar cell on the graphene/silicon interface. Schottky solar cells were manufactured using a front collector electrode from gold, silver and carbon. On the graphene/silicon interface of the Schottky solar cell an interlayer of Al2O3 or SiO2. For the purpose of IV characterization of the manufactured Schottky solar cell a measuring apparatus was assembled.

Tato práce se zabývá přípravou a charakterizací Schottkyho solárních článků s přechodem grafen/křemík. Pro tuto studii byla navržena a vyrobena aparatura pro měření I-V charakteristik solárního článku. Rozhraní grafen/křemík bylo dále modifikováno nanokrystaly galium nitridu a byl studován vliv těchto krystalů na vlastnosti solárního článku., This bachelor thesis deals with fabrication and characterization of Schottky solar cells with graphene/silicon junction. For this study, the I-V characteristic measuring device was designed and assembled. Also, the graphene/silicon junction was modified by GaN nanocrystals and properties of such a solar cell was studied.

Táto bakalárska práca sa zameriava na štúdium rozhrania grafén/kremík nachádzajúcom sa na solárnom článku s grafénovou vrstvou. Toto rozhranie bolo študované pomocou metódy EBIC a Ramanovej spektroskopie. Solárne články s grafénovou vrstvou boli vyrobené použitím elektrónovej litografie, chemického leptania a grafénu vyrobeného metódou CVD. Práca popisuje výrobu solárnych článkov s grafénovou vrstvou, metódu EBIC meranú pomocou SEM-u a analýzu zmien rozhrania grafén/kremík zapríčinených osvietením elektrónovým lúčom pomocou Ramanovej spektroskopie. V teoretickej časti je popísaný p-n prechod a Schottkyho prechod na solárnom článku, grafén a jeho výroba, ako aj základy metódy EBIC., This bachelor thesis is dedicated to study of interface graphene-on-silicon located on solar cell with graphene layer. The interface was studied by EBIC method and Raman spectroscopy. Solar cells with graphene sheet was fabricated using electron litography, chemical etching and graphene made by CVD method. The thesis describes fabrication of solar cells with graphene layer, method EBIC measured on SEM and analysis of changes graphene-on-silicon interface caused by enlightenment electron beam by Raman spectroscopy. In theorethical part is described p-n junction and Schottky junction of solar cell, graphene and its fabrication, as well as EBIC method fundamentals.

Obsahem této bakalářské práce je výroba, charakterizace a úprava Schottkyho solárních článků s rozhraním grafen-Si. Nanesením grafenu vyrobeného metodou CVD na křemíkový substrát s elektrodami bylo vytvořeno základní Schottkyho rozhraní solárního článku. Toto rozhraní grafen-Si bylo poté modifikováno žíháním v UHV a byla stanovena závislost účinnosti na teplotě. Dále byly studovány vlivy atomu galia na Schottkyho přechod. Proměřením voltampérových charakteristik byla srovnána účinnost takto vyrobených a upravených článků, načež byla provedena analýza ochuzené zóny Schottkyho přechodu pomocí metody X-EBIC., Main focus of this bachelor thesis is on fabrication, characterization and modification of graphene-on-silicon Schottky solar cells. By transfering CVD graphene onto silicon wafer with electrodes, a basic Schottky junction was created. The junction was then modified by annealing in UHV chamber as well as by gallium deposition. Information about power conversion efficiency of such Schottky solar cells was then obtained by IV measurement. Schottky junction itself was analyzed using X-EBIC method.