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This thesis focuses on employing a new patterning technique called block copolymer lithography to transfer the nano-porous pattern from the polymer template to the underlying oxide thin film. Nano-porous block copolymer films are produced by spin-coating polymer solution on wafers followed by annealing, UV exposure and development processes. Reactive-ion etching is then used to etch the oxide films based on the pattern of polymer template and the polymer is then removed. The obtained oxide microstructure is characterized by SEM, showing a nanomesh of microdomains with the same hole size and density as the initial block copolymer layer. The advantages of block copolymer lithography include uniform nanopatterning, cost efficiency and simple processing. The nano-porous oxide thin films could be used as hard mask for nanopatterning in microelectronics and for energy storage applications., Denna avhandling fokuserar på användningen av en ny mönstringsteknik som kallas block-sampolymerlitografi som används för att överföra nano-porösa mönster från polymermaller till en underliggande oxidtunnfilm. Nano-porösa blocksampolymerfilmer framställs genom spinbeläggningspolymerlösning på skivor följt av glödgning, UV-exponering och utvecklingsprocesser. Reaktionjon etsning används sedan för att etsa oxidfilmerna baserat på mönstret av polymermaller och därefter blir polymeren avlägsnad. Den erhållna oxidmikrostrukturen karakteriseras av SEM, som visar en nanomesh av mikrodomäner med samma hålstorlek och densitet som det ursprungliga blocksampolymerskiktet. Fördelarna med block-sampolymerlitografi innefattar likformig nanomönstring, kostnadseffektivitet och enkel bearbetning. De nanoporösa oxidtunnfilmerna kan användas som en hard mask för nanomönstring i mikroelektronik och för energilagringsapplikationer.

This thesis focuses on employing a new patterning technique called block copolymer lithography to transfer the nano-porous pattern from the polymer template to the underlying oxide thin film. Nano-porous block copolymer films are produced by spin-coating polymer solution on wafers followed by annealing, UV exposure and development processes. Reactive-ion etching is then used to etch the oxide films based on the pattern of polymer template and the polymer is then removed. The obtained oxide microstructure is characterized by SEM, showing a nanomesh of microdomains with the same hole size and density as the initial block copolymer layer. The advantages of block copolymer lithography include uniform nanopatterning, cost efficiency and simple processing. The nano-porous oxide thin films could be used as hard mask for nanopatterning in microelectronics and for energy storage applications., Denna avhandling fokuserar på användningen av en ny mönstringsteknik som kallas block-sampolymerlitografi som används för att överföra nano-porösa mönster från polymermaller till en underliggande oxidtunnfilm. Nano-porösa blocksampolymerfilmer framställs genom spinbeläggningspolymerlösning på skivor följt av glödgning, UV-exponering och utvecklingsprocesser. Reaktionjon etsning används sedan för att etsa oxidfilmerna baserat på mönstret av polymermaller och därefter blir polymeren avlägsnad. Den erhållna oxidmikrostrukturen karakteriseras av SEM, som visar en nanomesh av mikrodomäner med samma hålstorlek och densitet som det ursprungliga blocksampolymerskiktet. Fördelarna med block-sampolymerlitografi innefattar likformig nanomönstring, kostnadseffektivitet och enkel bearbetning. De nanoporösa oxidtunnfilmerna kan användas som en hard mask för nanomönstring i mikroelektronik och för energilagringsapplikationer.

This study has evaluated self-assembled peptide nanotubes (PNTS) and nanowires (PNWS) as etching mask materials for the rapid and low-cost fabrication of silicon wires using reactive ion etching (RIE). The self-assembled peptide structures were fabricated under mild conditions and positioned on clean silicon wafers, after which these biological nanostructures were exposed to an RIE etching process. Following this treatment, the structure of the remaining nanotubes and nanowires were analyzed by scanning electron microscopy (SEM). Important differences in the behavior of the nanotubes and the nanowires were observed after the RIE process. The nanotubes remained intact while the nanowires were destroyed by the RIE process. The instability of the peptide nanowires during this process was further confirmed with focused ion beam (FIB) milling experiments. The PNTS could stand energetic argon ions for around 32 seconds while the PNWS resisted only 4 seconds before becoming milled. Based on these results, self-assembled PNTS were further used as an etching mask to fabricate silicon wires in a rapid and low-cost manner. The obtained silicon wires were subjected to structural and electrical characterization by SEM and I-V measurements. Additionally, the fabricated silicon structures were functionalized with fluorescent molecules via a biotin-streptavidin interaction in order to probe their potential in the development of biosensing devices.