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1. ETSOI CMOS for System-on-Chip Applications Featuring 22nm Gate Length, Sub-100nm Gate Pitch, and 0.08mm2 RAM Cell

2. Impact of Inside Spacer Process on Fully Self-Aligned 250 GHz SiGe:C HBTs Reliability Performances: a - Si vs. Nitride.

3. How to Monitor Metal-Insulator-Metal (MIM) Capacitors Dielectric Reliability.

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