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Photoluminescence (PL) has been observed at room temperature from a Ga0.96In0.04As0.11Sb0.89 quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga0.96In0.04As0.11Sb0.89 with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature.

Photoluminescence (PL) has been observed at room temperature from a Ga0.96In0.04As0.11Sb0.89 quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga0.96In0.04As0.11Sb0.89 with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature.

A hybrid double heterostructure with large asymmetric band offsets, combining AlAsSb/InAs (as a III-V part) and CdMgSe/CdSe (as a II-VI part), has been proposed as a basic element of a mid-infrared laser structure design. The p-i-n diode structure has been successfully grown by molecular beam epitaxy (MBE) and exhibited an intense long-wavelength electroluminescence at 3.12 micrometers (300 K). A II-VI MBE growth initiation with a thin ZnTe buffer layer prior to the CdMgSe deposition results in a dramatic reduction of defect density originating at the II-VI/III-V interface, as demonstrated by transmission electron microscopy. A less than 10 times reduction of electroluminescence intensity from 77 to 300 K indicates an efficient carrier confinement in the InAs active layer due to high potential barriers in conduction and valence bands, estimated as delta E(sub c) = 1.28 eV and delta E(sub v) ^ 1.6 eV. An increase in the pumping current results in a super-linear raising the EL intensity. The type of band line up at the coherent InAs/Cd(1-x)Mg(x)Se interface is discussed for 0 <- <- 0.2, using experimental data and theoretical estimations within a model-solid theory., Pub in: Materials Research Society Symposium Proceedings, Volume 692. This article is from ADA405047 Progress in Semiconductor Materials for Optoelectronic Applications Symposium held in Boston, Massachusetts on November 26-29, 2001.

Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hnu(A) which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 heterointerface, while the emission band hnu(B) originates from radiative transitions involving acceptor states in the narrow gap In0.83Ga0.17As0.82Sb0.18 near the type II heteroboundary.

Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hnu(A) which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 heterointerface, while the emission band hnu(B) originates from radiative transitions involving acceptor states in the narrow gap In0.83Ga0.17As0.82Sb0.18 near the type II heteroboundary.

Mid-infrared photoluminescence has been observed from interface transitions in high quality, abrupt P-Ga0.84In0.16As0.22Sb0.78/p-InAs heterojunctions grown by liquid phase epitaxy from an In-rich melt. The Ga0.84In0.16As0.22Sb0.78 quaternary epitaxial layer was unintentionally doped and grown lattice matched on to a (100) oriented p-type InAs substrate, resulting in a P-p isotype heterojunction. The photoluminescence emission spectra were investigated and exhibited three pronounced emission bands in the spectral region from 0.30 to 0.68 eV; h nu (1) = 0.317 eV, h nu (2) = 0.380 eV, and h nu (L) = 0.622 eV. The emission band h nu (1) was identified with radiative transitions between electron and hole quantum well subbands in the semimetal channel at the P-GaIn0.03As0.10Sb/p-InAs interface, while the h nu (2) band originates from radiative transitions involving deep acceptor states in the InAs substrate. The high-energy recombination h nu (L) is characteristic of the Ga0.84In0.16As0.22Sb0.78 bulk quaternary layer. (C) 2001 American Institute of Physics.

Mid-infrared photoluminescence has been observed from interface transitions in high quality, abrupt P-Ga0.84In0.16As0.22Sb0.78/p-InAs heterojunctions grown by liquid phase epitaxy from an In-rich melt. The Ga0.84In0.16As0.22Sb0.78 quaternary epitaxial layer was unintentionally doped and grown lattice matched on to a (100) oriented p-type InAs substrate, resulting in a P-p isotype heterojunction. The photoluminescence emission spectra were investigated and exhibited three pronounced emission bands in the spectral region from 0.30 to 0.68 eV; h nu (1) = 0.317 eV, h nu (2) = 0.380 eV, and h nu (L) = 0.622 eV. The emission band h nu (1) was identified with radiative transitions between electron and hole quantum well subbands in the semimetal channel at the P-GaIn0.03As0.10Sb/p-InAs interface, while the h nu (2) band originates from radiative transitions involving deep acceptor states in the InAs substrate. The high-energy recombination h nu (L) is characteristic of the Ga0.84In0.16As0.22Sb0.78 bulk quaternary layer. (C) 2001 American Institute of Physics.

Pres: 8th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia, 19-23 Jun 2000, p109-112. This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings

Pres: 6th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 22-26 Jun 1998. p406-409. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings