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In this paper, a comparison between six finite element models of a representative wing structural component performed in the context of Optimised Design for Inspection (ODIN) project of the European Cooperation in Science and Technology (COST) is presented. Six partners from six different countries involved in the project received the drawing of the structure, the material properties, the loading and boundary conditions. Each partner, based on their background and experience in numerical analyses, developed a finite element model with different levels of details and accuracy and performed a blind prediction of the structural behaviour of the wing component. The numerical results are presented and compared with the experimental test data conducted at Cardiff University.

In order to track “small dose effect” leading to stabilization of RADFETs with 1 μm thick oxide fabricated at Tyndall National Institute, Cork, Ireland irradiation was performed with gamma-rays in the radiation dose interval from 1 to 5 cGy, followed with room temperature annealing for the time of 28 days. Gate bias during irradiation was 0, 2.5 and 5 V. Threshold voltage shift ΔVT determined from transfer characteristics in saturation were followed during irradiation and annealing. It was shown that there is significant increase in ΔVT for 1 cGy radiation dose and those are 36.3, 43.3 mV and 45.7 mV for gate bias 0, 2.5 V and 5 V, respectively. For higher radiation doses ΔVT also increases, however, such increase is much lower. RADFETs fading at room temperature lead to permanent decrease in ΔVT and after 28 days the threshold voltage for devices is returned to virgin device value. Small dose effect is confirmed and radiation dose of at least 5 cGy is necessary for RADFET stabilization before their use in dosimetric application. After RADFETs stabilization they were irradiated in dose interval from 10 to 50 cGy with gate bias of 0, 2.5 and 5 V. It was shown that there is a linear dependence between ΔVT and absorbed radiation dose D, for gate bias during irradiation 0, 2.5 and 5 V. Defects responsible for threshold voltage shift, formed during irradiation as well as their neutralization/compensation during annealing, are also discussed. © 2019

The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.

The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.

In this paper, the results of pMOS dosemeters sensitivity to X-ray radiation and 28-d fading at room temperature are presented. Two types of dosemeters were used, which differ in gate oxide layer thickness. The sensitivity of pMOS dosemeters with gate oxide layer thickness of 1 A mu m was followed in the dose intervals of 1 to 10 cGy and 10 to 100 cGy, whereas that of 400 nm was in the interval of 10 to 100 cGy. The sensitivity was characterised by the threshold voltage shift, which was determined as a function of absorbed radiation dose and time after irradiation. Linear dependence between threshold voltage shift and absorbed radiation dose was established, as well as that considerable fading occurs during the first few days after irradiation. The mechanisms responsible for threshold voltage shift during irradiation and latter annealing have been also discussed.

In this paper, the results of pMOS dosemeters sensitivity to X-ray radiation and 28-d fading at room temperature are presented. Two types of dosemeters were used, which differ in gate oxide layer thickness. The sensitivity of pMOS dosemeters with gate oxide layer thickness of 1 A mu m was followed in the dose intervals of 1 to 10 cGy and 10 to 100 cGy, whereas that of 400 nm was in the interval of 10 to 100 cGy. The sensitivity was characterised by the threshold voltage shift, which was determined as a function of absorbed radiation dose and time after irradiation. Linear dependence between threshold voltage shift and absorbed radiation dose was established, as well as that considerable fading occurs during the first few days after irradiation. The mechanisms responsible for threshold voltage shift during irradiation and latter annealing have been also discussed.

In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using Co-60 source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift Delta V-T and radiation dose D. The application of positive bias of +5 Vat the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in Delta V-T and also, approximately a linear dependence between Delta V-T and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range.

In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using Co-60 source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift Delta V-T and radiation dose D. The application of positive bias of +5 Vat the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in Delta V-T and also, approximately a linear dependence between Delta V-T and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range.

In the article titled “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation” there was an error in the drawing of Figure 2

Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.

This paper examines the effects of irradiating indium oxide films of nanoscale thickness by ion beams, when these films are in the Cooper-pair insulator state. Radiation effects are predicted on the basis of Monte Carlo simulations of ion transport. Results of numerical experiments are interpreted within the theoretical model of a Cooper-pair insulator. The study suggests that radiation-induced changes in InOx films exposed to ion beams could significantly alter their current-voltage characteristics and that a transition to a metallic state is possible, due to radiation-induced perturbation of the fine-tuned granular structure. Furthermore, incident and displaced ions can break up enough Cooper pairs in InOx films to cause dissolution of this specific insulating state.

In the article titled “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation” there was an error in the drawing of Figure 2

Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.

This paper examines the effects of irradiating indium oxide films of nanoscale thickness by ion beams, when these films are in the Cooper-pair insulator state. Radiation effects are predicted on the basis of Monte Carlo simulations of ion transport. Results of numerical experiments are interpreted within the theoretical model of a Cooper-pair insulator. The study suggests that radiation-induced changes in InOx films exposed to ion beams could significantly alter their current-voltage characteristics and that a transition to a metallic state is possible, due to radiation-induced perturbation of the fine-tuned granular structure. Furthermore, incident and displaced ions can break up enough Cooper pairs in InOx films to cause dissolution of this specific insulating state.

Low-temperature thermodynamics of the asymmetric next-nearest-neighbor Ising (ASYNNNI) model is analyzed. It is demonstrated that this model at low temperatures is equivalent to one-dimensional (1D) NN Ising model in zero external held with the NN interaction being a copper mediated NNN interaction of the ASYNNNI model, V-2<0. It is also shown that the spin correlation function xi v(2)(r) = (sigma(i)sigma(i+r)) - (sigma(i))(2) along Cu-O(1) chains decays exponentially with interspin distance r at T approximate to 0.