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The future regional sea level (RSL) rise in the western North Pacific is investigated by dynamical downscaling with the Regional Ocean Modeling System (ROMS) with an eddy-permitting resolution based on three global climate models—MIROC-ESM, CSIRO-Mk3.6.0, and GFDL-CM3—under the highest greenhouse-gas emission scenario. The historical run is forced by the air-sea fluxes calculated from Coordinated Ocean Reference Experiment version 2 (COREv2) data. Three future runs—ROMSMIROC, ROMS-CSIRO, and ROMS-GFDL—are forced with an atmospheric field constructed by adding the difference between the climate model parameters for the twentyfirst and twentieth century to fields in the historical run. In all downscaling, the RSL rise along the eastern coast of Japan is generally half or less of the RSL rise maxima off the eastern coast. The projected regional (total) sea level rises along the Honshu coast during 2081–2100 relative to 1981–2000 are 19–25 (98–104), 6–15 (71–80), and 8–14 (80–86) cm in ROMS-MIROC, ROMS-CSIRO, and ROMS-GFDL, respectively. The discrepancies of the RSL rise along the Honshu coast between the climate models and downscaling are less than 10 cm. The RSL changes in the Kuroshio Extension (KE) region in all downscaling simulations are related to the changes of KE (northward shift or intensification) with climate change.

The future regional sea level (RSL) rise in the western North Pacific is investigated by dynamical downscaling with the Regional Ocean Modeling System (ROMS) with an eddy-permitting resolution based on three global climate models—MIROC-ESM, CSIRO-Mk3.6.0, and GFDL-CM3—under the highest greenhouse-gas emission scenario. The historical run is forced by the air-sea fluxes calculated from Coordinated Ocean Reference Experiment version 2 (COREv2) data. Three future runs—ROMSMIROC, ROMS-CSIRO, and ROMS-GFDL—are forced with an atmospheric field constructed by adding the difference between the climate model parameters for the twentyfirst and twentieth century to fields in the historical run. In all downscaling, the RSL rise along the eastern coast of Japan is generally half or less of the RSL rise maxima off the eastern coast. The projected regional (total) sea level rises along the Honshu coast during 2081–2100 relative to 1981–2000 are 19–25 (98–104), 6–15 (71–80), and 8–14 (80–86) cm in ROMS-MIROC, ROMS-CSIRO, and ROMS-GFDL, respectively. The discrepancies of the RSL rise along the Honshu coast between the climate models and downscaling are less than 10 cm. The RSL changes in the Kuroshio Extension (KE) region in all downscaling simulations are related to the changes of KE (northward shift or intensification) with climate change.

This paper presents the fabrication and characteristics of self-aligned gate-last AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) featuring regrown source/drain for low ON-state resistance (R-ON). Previously, we demonstrated conventional enhancement-mode AlN/GaN MOSHEMTs on Si substrate with excellent DC performance but limited RF characteristics by large parasitic gate-to-source/drain overlap capacitance. In this paper, the self-aligned gate-last process was developed to minimize the parasitic capacitance. SiNx sidewall and supporting layer were inserted to separate the gate head and source/drain. In the gate-last devices, f(T) has been improved to be similar to 40 GHz with a channel length (L-g) of 210 nm. Delay time analysis showed that drain delay was relatively small compared with gate transit and parasitic charging time because of the self-aligned structure.

This paper presents the fabrication and characteristics of self-aligned gate-last AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) featuring regrown source/drain for low ON-state resistance (R-ON). Previously, we demonstrated conventional enhancement-mode AlN/GaN MOSHEMTs on Si substrate with excellent DC performance but limited RF characteristics by large parasitic gate-to-source/drain overlap capacitance. In this paper, the self-aligned gate-last process was developed to minimize the parasitic capacitance. SiNx sidewall and supporting layer were inserted to separate the gate head and source/drain. In the gate-last devices, f(T) has been improved to be similar to 40 GHz with a channel length (L-g) of 210 nm. Delay time analysis showed that drain delay was relatively small compared with gate transit and parasitic charging time because of the self-aligned structure.

This paper reports the first GaN based active matrix light emitting diode (AMLED) array. The array, fabricated by CMOS compatible process and flip-chip technology, can control the LED pixel individually and exhibit excellent emission uniformity. (C) 2008 Optical Society of America

A monolithic high-resolution (individual pixel size 300 x 300 mu m(2)) active matrix (AM) programmed 8 x 8 micro-LED array was fabricated using flip-chip technology. The display was composed of an AM panel and a LED microarray. The AM panel included driving circuits composed of p-type MOS transistors for each pixel. The n-electrodes of the LED pixels in the microarray were connected together, and the p-electrodes were connected to individual outputs of the driving circuits on the AM panel. Using flip-chip technology, the LED microarray was then flipped onto the AM panel to create a microdisplay.

A monolithic high-resolution (individual pixel size 300 x 300 mu m(2)) active matrix (AM) programmed 8 x 8 micro-LED array was fabricated using flip-chip technology. The display was composed of an AM panel and a LED microarray. The AM panel included driving circuits composed of p-type MOS transistors for each pixel. The n-electrodes of the LED pixels in the microarray were connected together, and the p-electrodes were connected to individual outputs of the driving circuits on the AM panel. Using flip-chip technology, the LED microarray was then flipped onto the AM panel to create a microdisplay.

This paper reports the first GaN based active matrix light emitting diode (AMLED) array. The array, fabricated by CMOS compatible process and flip-chip technology, can control the LED pixel individually and exhibit excellent emission uniformity. (C) 2008 Optical Society of America

The importance of mitogen-activated protein kinase signaling in melanoma is underscored by the prevalence of activating mutations in N-Ras and B-Raf, yet clinical development of inhibitors of this pathway has been largely ineffective, suggesting that alternative oncogenes may also promote melanoma. Notch is an interesting candidate that has only been correlated with melanoma development and progression; a thorough assessment of tumor-initiating effects of activated Notch on human melanocytes would clarify the mounting correlative evidence and perhaps identify a novel target for an otherwise untreatable disease. Analysis of a substantial panel of cell lines and patient lesions showed that Notch activity is significantly higher in melanomas than their nontransformed counterparts. The use of a constitutively active, truncated Notch transgene construct (N(IC)) was exploited to determine if Notch activation is a "driving" event in melanocytic transformation or instead a "passenger" event associated with melanoma progression. N(IC)-infected melanocytes displayed increased proliferative capacity and biological features more reminiscent of melanoma, such as dysregulated cell adhesion and migration. Gene expression analyses supported these observations and aided in the identification of MCAM, an adhesion molecule associated with acquisition of the malignant phenotype, as a direct target of Notch transactivation. N(IC)-positive melanocytes grew at clonal density, proliferated in limiting media conditions, and also exhibited anchorage-independent growth, suggesting that Notch alone is a transforming oncogene in human melanocytes, a phenomenon not previously described for any melanoma oncogene. This new information yields valuable insight into the basic epidemiology of melanoma and launches a realm of possibilities for drug intervention in this deadly disease.

This paper reports the first GaN based active matrix light emitting diode (AMLED) array. The array, fabricated by CMOS compatible process and flip-chip technology, can control the LED pixel individually and exhibit excellent emission uniformity. (C) 2008 Optical Society of America

In this paper, the first full-color active matrix programmable monolithic Light Emitting Diodes on Silicon (LEDoS) displays are fabricated using flip-chip technology. The forward voltage uniformity of the LED pixels was greatly improved by a double-side ground structure. A basic LED micro-array module was fabricated and the AM substrate has scaling-up ability. By integrating a certain number of LED micro-array modules onto a large-scale AM substrate, a large-scale display is obtained. By this scaling-up method, the utilization rate of the LED wafers is increased significantly. The yield of the LED pixels is improved simultaneously. Red, green and blue phosphors were excited by UV light to realize a full-color display.

LED array displays made with individually packaged devices has been widely used for various applications. In recent years, different techniques are exploited to fabricate monolithic passive addressable LED arrays [1][2][3][4]. The array dimensions and pixel brightness in conventional passive addressable LED arrays were limited by the loading effect in the same row or column. Therefore, a new addressing scheme and fabrication technology are needed to improve the operating effectiveness of monolithic LED arrays.

R-G-B light emitting diode on silicon (LEDoS) micro-displays were fabricated and the world's first full color 3LED projection prototype is presented. LEDoS micro-displays were realized by flip-chip bonding of LED micro-arrays on silicon CMOS active-matrix drivers. Using trichroic prism, images generated from three self-emissive R-G-B LEDoS micro-displays were combined to form a color image, demonstrating great potential for high efficiency and high brightness projection applications.