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Zhong-Hui Li, Xin-Wei Zhang, Yue-Yan Weng, Lei Zhou, Fang Wang Department of Oncology, Wangjing Hospital, China Academy of Chinese Medical Sciences, Beijing, People’s Republic of ChinaCorrespondence: Fang Wang, Department of Oncology, Wangjing Hospital, China Academy of Chinese Medical Sciences, Huajiadi Road, Beijing, 100102, People’s Republic of China, Email wf074500@163.comObjective: In the direction of evaluating the current status of outcome indicators and control group selection in randomized controlled studies of Chinese herbal compounding (such as Sini plus Renshen Decoction, Jianpifuzhengfang, Bufei Jianzhong Decoction, etc) for cancer-caused fatigue and to provide a reference for clinical studies of Chinese herbal compounding for cancer-caused fatigue.Methods: Randomized controlled studies of Chinese herbal medicine for cancer-caused fatigue in the midst of 2012 and 2022 were searched in CNKI, PubMed, and EMBASE databases on the China Knowledge Network, and the literature was screened using NoteExpress. Two researchers independently conducted the literature review, and then the studies that met the criteria were grouped and analyzed adopting qualitative analysis of outcome indicators and control groups.Results: A total of 70 randomized controlled studies that met the requirements were included, and after doing statistical analysis, it can draw to the conclusion that the risk of bias in the included studies was high; at the same time, the TCM evidence score scale, objective indicators, and safety indicators were underutilized; additionally, there were no uniform standards for the fatigue scale, and the selection of control groups lacked balance and consistency.Conclusion: The outcome indicators of TCM compound treatment of cancer-caused fatigue should be on the basis of the principle of “diagnosis and treatment” in TCM, the proportion of objective indicators should be exaggerated, as well as the interventions in the control group should be unified.K

Novel homologues series of the highly soluble and coplanar oligo-phenylenevinylenes (OPV), containing up to eight phenyl rings symmetrically end-functionalized with multiple polyalkyleneoxy substituents (OPV(n)-OR), and containing up to six phenyl rings

We report the temperature dependence of the photoluminescence from our V-grooved GaAs/A1GaAs quantum wires. Based on the specially resolved luminescence results, our results show that in the processes of real space carrier transfer from the vertical quantum well region to quantum wire region, a 3.5 meV thermal activation energy has been experimentally observed in our sample. The thermal activation is attributed as the scattering process of carriers from two-dimensional states in the vertical quantum well to the one-dimensional quantum wire states. Based on numerical energy band structure analysis, a thermal activation energy of 2-9 meV is obtained theoretically, in good agreement with the experimental data.

The effects of intermixing of Al0.54Ga0.46As/GaAs/Al0.54Ga0.46A s QW enhanced by proton implantation and subsequent annealing have been investigated by PL and PR measurements. Comparing with as-grown QW, obvious blueshifts of all the transitions were observed. The H22 transition was found to be more sensitive to the implantation doses than that of H11. The experimental results are consistent with the theoretical results calculated by using the model of error function profile of Al composition. The results are fruitful to understand the potential profile after intermixing enhanced by proton implantation, and also to the application of implantation enhanced intermixing effects on devices.

Single Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid thermally annealing were investigated by spatially resolved microphotoluminescence (micro-PL). The PL from the necking region was clearly observed at room temperature. Optical properties of QWR and the adjacent quantum well structures were strongly degraded by the implantation. The recovery properties of the PL signals from all the structures were dependent on the implantation dose. A critical dose of 1 × 1013 cm-2 was found for the selective implantation, over which the PL from the necking region could not be recovered. Also the blueshifts of QWR and the necking-region PL peaks were observed for all the annealed samples. This blueshift is caused by the interface intermixing, which is very useful to increase the confinement of carriers in QWR region for optoelectronic device applications.