Search

Your search keyword '"Hwang, Cheol Seong"' showing total 23 results
Start Over Author "Hwang, Cheol Seong" Database OAIster
23 results on '"Hwang, Cheol Seong"'

1. Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Author

Ministerio de Ciencia, Innovación y Universidades (España), Ministerio de Ciencia e Innovación (España), Agencia Estatal de Investigación (España), European Commission, Generalitat de Catalunya, Silva, José P.B. [0000-0002-3485-7032], Alcala, Ruben [0000-0003-2799-9793], Avci, Uygar E. [0000-0002-0109-1923], Barrett, Nick [0000-0002-8228-0805], Bégon-Lours, Laura [0000-0003-2520-3317], Borg, Mattias [0000-0003-1217-369X], Byun, Seungyong [0009-0002-9590-2690], Chang, Sou Chi 0000-[0001-8128-7784], Cheong, Sang Wook [0000-0001-9905-6175], Choe, Duk Hyun [0000-0002-2775-8976], Coignus, Jean [0000-0001-8898-5999], Deshpande, Veeresh [0000-0002-0349-4857], Dimoulas, Athanasios [0000-0003-3199-1356], Dubourdieu, Catherine [0000-0002-4642-6897], Fina, Ignasi [0000-0003-4182-6194], Funakubo, Hiroshi [0000-0002-1106-200X], Grenouillet, Laurent [0000-0001-6721-0393], Gruverman, Alexei [0000-0003-0492-2750], Heo, Jinseong [0000-0003-2530-488X], Hoffmann, Michael 0000-0001-6493-3457], Hsain, H. Alex [0000-0002-6745-829X], Huang, Fei Ting [0000-0[001-9810-2811], Hwang, Cheol Seong [0000-0002-6254-9758], Íñiguez, Jorge [0000-0001-6435-3604], Jones, Jacob L. [0000-0002-9182-0957], Karpov, Ilya V. [0000-0003-3146-7992], Kersch, Alfred [0000-0003-4407-555X], Kwon, Taegyu [0000-0002-8988-0977], Lancaster, Suzanne [0000-0002-5689-2795], Lederer, Maximilian [0000-0002-1739-2747], Lee, Younghwan [0000-0001-8485-6807], Lomenzo, Patrick D. [0000-0001-8208-3871], Martin, Lane W. [0000-0003-1889-2513], Martin, Simon [0009-0000-6928-3836], Migita, Shinji [0000-0002-5936-9182], Mikolajick, Thomas [0000-0003-3814-0378], Noheda, Beatriz [0000-0001-8456-2286], Park, Min Hyuk [0000-0001-6333-2668], Rabe, Karin M. [0000-0002-7809-7282], Salahuddin, Sayeef [0000-0002-0315-2208], Sánchez Barrera, Florencio [0000-0002-5314-453X], Seidel, Konrad [0009-0003-5889-4414], Shimizu, Takao [0000-0001-9508-7601], Shiraishi, Takahisa [0000-0002-2154-0589], Slesazeck, Stefan [0000-0002-0414-0321], Toriumi, Akira [0009-0005-0275-0854], Uchida, Hiroshi [0000-0002-5448-2987], Vilquin, Bertrand [0000-0002-7404-0019], Xu, Xianghan [0000-0001-6854-300X], Ye, Kun Hee [0000-0003-4953-2983], Schroeder, Uwe [0000-0002-6824-2386], Silva, José P.B., Alcala, Ruben, Avci, Uygar E., Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou Chi, Cheong, Sang Wook, Choe, Duk Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H. Alex, Huang, Fei Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L., Karpov, Ilya V., Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D., Martin, Lane W., Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M., Salahuddin, Sayeef, Sánchez Barrera, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, Schroeder, Uwe, Ministerio de Ciencia, Innovación y Universidades (España), Ministerio de Ciencia e Innovación (España), Agencia Estatal de Investigación (España), European Commission, Generalitat de Catalunya, Silva, José P.B. [0000-0002-3485-7032], Alcala, Ruben [0000-0003-2799-9793], Avci, Uygar E. [0000-0002-0109-1923], Barrett, Nick [0000-0002-8228-0805], Bégon-Lours, Laura [0000-0003-2520-3317], Borg, Mattias [0000-0003-1217-369X], Byun, Seungyong [0009-0002-9590-2690], Chang, Sou Chi 0000-[0001-8128-7784], Cheong, Sang Wook [0000-0001-9905-6175], Choe, Duk Hyun [0000-0002-2775-8976], Coignus, Jean [0000-0001-8898-5999], Deshpande, Veeresh [0000-0002-0349-4857], Dimoulas, Athanasios [0000-0003-3199-1356], Dubourdieu, Catherine [0000-0002-4642-6897], Fina, Ignasi [0000-0003-4182-6194], Funakubo, Hiroshi [0000-0002-1106-200X], Grenouillet, Laurent [0000-0001-6721-0393], Gruverman, Alexei [0000-0003-0492-2750], Heo, Jinseong [0000-0003-2530-488X], Hoffmann, Michael 0000-0001-6493-3457], Hsain, H. Alex [0000-0002-6745-829X], Huang, Fei Ting [0000-0[001-9810-2811], Hwang, Cheol Seong [0000-0002-6254-9758], Íñiguez, Jorge [0000-0001-6435-3604], Jones, Jacob L. [0000-0002-9182-0957], Karpov, Ilya V. [0000-0003-3146-7992], Kersch, Alfred [0000-0003-4407-555X], Kwon, Taegyu [0000-0002-8988-0977], Lancaster, Suzanne [0000-0002-5689-2795], Lederer, Maximilian [0000-0002-1739-2747], Lee, Younghwan [0000-0001-8485-6807], Lomenzo, Patrick D. [0000-0001-8208-3871], Martin, Lane W. [0000-0003-1889-2513], Martin, Simon [0009-0000-6928-3836], Migita, Shinji [0000-0002-5936-9182], Mikolajick, Thomas [0000-0003-3814-0378], Noheda, Beatriz [0000-0001-8456-2286], Park, Min Hyuk [0000-0001-6333-2668], Rabe, Karin M. [0000-0002-7809-7282], Salahuddin, Sayeef [0000-0002-0315-2208], Sánchez Barrera, Florencio [0000-0002-5314-453X], Seidel, Konrad [0009-0003-5889-4414], Shimizu, Takao [0000-0001-9508-7601], Shiraishi, Takahisa [0000-0002-2154-0589], Slesazeck, Stefan [0000-0002-0414-0321], Toriumi, Akira [0009-0005-0275-0854], Uchida, Hiroshi [0000-0002-5448-2987], Vilquin, Bertrand [0000-0002-7404-0019], Xu, Xianghan [0000-0001-6854-300X], Ye, Kun Hee [0000-0003-4953-2983], Schroeder, Uwe [0000-0002-6824-2386], Silva, José P.B., Alcala, Ruben, Avci, Uygar E., Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou Chi, Cheong, Sang Wook, Choe, Duk Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H. Alex, Huang, Fei Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L., Karpov, Ilya V., Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D., Martin, Lane W., Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M., Salahuddin, Sayeef, Sánchez Barrera, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, and Schroeder, Uwe

Abstract

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

Published
2023

2. Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Author

Silva, José PB, Silva, José PB, Alcala, Ruben, Avci, Uygar E, Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou-Chi, Cheong, Sang-Wook, Choe, Duk-Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H Alex, Huang, Fei-Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L, Karpov, Ilya V, Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D, Martin, Lane W, Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M, Salahuddin, Sayeef, Sánchez, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, Schroeder, Uwe, Silva, José PB, Silva, José PB, Alcala, Ruben, Avci, Uygar E, Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou-Chi, Cheong, Sang-Wook, Choe, Duk-Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H Alex, Huang, Fei-Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L, Karpov, Ilya V, Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D, Martin, Lane W, Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M, Salahuddin, Sayeef, Sánchez, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, and Schroeder, Uwe

Abstract

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

Published
2023

3. Broad Phase Transition of Fluorite-Structured Ferroelectrics for Large Electrocaloric Effect

Author

Park, Min Hyuk, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong, Park, Min Hyuk, Mikolajick, Thomas, Schroeder, Uwe, and Hwang, Cheol Seong

Abstract

Field-induced ferroelectricity in (doped) hafnia and zirconia has attracted increasing interest in energy-related applications, including energy harvesting and solid-state cooling. It shows a larger isothermal entropy change in a much wider temperature range compared with those of other promising candidates. The field-induced phase transition occurs in an extremely wide temperature range, which contributes to the giant electrocaloric effect. This article examines the possible origins of a large isothermal entropy change, which can be related to the extremely broad phase transitions in fluorite-structured ferroelectrics. While the materials possess a high entropy change associated with the polar–nonpolar phase transition, which can contribute to the high energy performance, the higher breakdown field compared with perovskites practically determines the available temperature range.

Published
2019

4. Broad Phase Transition of Fluorite-Structured Ferroelectrics for Large Electrocaloric Effect

Author

Park, Min Hyuk, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong, Park, Min Hyuk, Mikolajick, Thomas, Schroeder, Uwe, and Hwang, Cheol Seong

Abstract

Field-induced ferroelectricity in (doped) hafnia and zirconia has attracted increasing interest in energy-related applications, including energy harvesting and solid-state cooling. It shows a larger isothermal entropy change in a much wider temperature range compared with those of other promising candidates. The field-induced phase transition occurs in an extremely wide temperature range, which contributes to the giant electrocaloric effect. This article examines the possible origins of a large isothermal entropy change, which can be related to the extremely broad phase transitions in fluorite-structured ferroelectrics. While the materials possess a high entropy change associated with the polar–nonpolar phase transition, which can contribute to the high energy performance, the higher breakdown field compared with perovskites practically determines the available temperature range.

Published
2019

5. Broad Phase Transition of Fluorite-Structured Ferroelectrics for Large Electrocaloric Effect

Author

Park, Min Hyuk, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong, Park, Min Hyuk, Mikolajick, Thomas, Schroeder, Uwe, and Hwang, Cheol Seong

Abstract

Field-induced ferroelectricity in (doped) hafnia and zirconia has attracted increasing interest in energy-related applications, including energy harvesting and solid-state cooling. It shows a larger isothermal entropy change in a much wider temperature range compared with those of other promising candidates. The field-induced phase transition occurs in an extremely wide temperature range, which contributes to the giant electrocaloric effect. This article examines the possible origins of a large isothermal entropy change, which can be related to the extremely broad phase transitions in fluorite-structured ferroelectrics. While the materials possess a high entropy change associated with the polar–nonpolar phase transition, which can contribute to the high energy performance, the higher breakdown field compared with perovskites practically determines the available temperature range.

Published
2019

6. Review and perspective on ferroelectric HfO₂-based thin films for memory applications

Author

Park, Min Hyuk, Lee, Young Hwan, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong, Park, Min Hyuk, Lee, Young Hwan, Mikolajick, Thomas, Schroeder, Uwe, and Hwang, Cheol Seong

Abstract

The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material’s point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.

Published
2018

7. Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

Author

Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Hyun, Seung Dam, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong, Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Hyun, Seung Dam, Mikolajick, Thomas, Schroeder, Uwe, and Hwang, Cheol Seong

Abstract

Hf₁₋ₓZrₓO₂ (x ∼ 0.5–0.7) has been the leading candidate of ferroelectric materials with a fluorite crystal structure showing highly promising compatibility with complementary metal oxide semiconductor devices. Despite the notable improvement in device performance and processing techniques, the origin of its ferroelectric crystalline phase (space group: Pca2₁) formation has not been clearly elucidated. Several recent experimental and theoretical studies evidently showed that the interface and grain boundary energies of the higher symmetry phases (orthorhombic and tetragonal) contribute to the stabilization of the metastable non-centrosymmetric orthorhombic phase or tetragonal phase. However, there was a clear quantitative discrepancy between the theoretical expectation and experiment results, suggesting that the thermodynamic model may not provide the full explanation. This work, therefore, focuses on the phase transition kinetics during the cooling step after the crystallization annealing. It was found that the large activation barrier for the transition from the tetragonal/orthorhombic to the monoclinic phase, which is the stable phase at room temperature, suppresses the phase transition, and thus, plays a critical role in the emergence of ferroelectricity.

Published
2018

8. Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

Author

Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Hyun, Seung Dam, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong, Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Hyun, Seung Dam, Mikolajick, Thomas, Schroeder, Uwe, and Hwang, Cheol Seong

Abstract

Hf₁₋ₓZrₓO₂ (x ∼ 0.5–0.7) has been the leading candidate of ferroelectric materials with a fluorite crystal structure showing highly promising compatibility with complementary metal oxide semiconductor devices. Despite the notable improvement in device performance and processing techniques, the origin of its ferroelectric crystalline phase (space group: Pca2₁) formation has not been clearly elucidated. Several recent experimental and theoretical studies evidently showed that the interface and grain boundary energies of the higher symmetry phases (orthorhombic and tetragonal) contribute to the stabilization of the metastable non-centrosymmetric orthorhombic phase or tetragonal phase. However, there was a clear quantitative discrepancy between the theoretical expectation and experiment results, suggesting that the thermodynamic model may not provide the full explanation. This work, therefore, focuses on the phase transition kinetics during the cooling step after the crystallization annealing. It was found that the large activation barrier for the transition from the tetragonal/orthorhombic to the monoclinic phase, which is the stable phase at room temperature, suppresses the phase transition, and thus, plays a critical role in the emergence of ferroelectricity.

Published
2018

9. Review and perspective on ferroelectric HfO₂-based thin films for memory applications

Author

Park, Min Hyuk, Lee, Young Hwan, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong, Park, Min Hyuk, Lee, Young Hwan, Mikolajick, Thomas, Schroeder, Uwe, and Hwang, Cheol Seong

Abstract

The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material’s point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.

Published
2018

10. Recommended reading list of early publications on atomic layer deposition-Outcome of the 'Virtual Project on the History of ALD'

Author

Ahvenniemi, Esko, Akbashev, Andrew R., Ali, Saima, Bechelany, Mikhael, Berdova, Maria, Boyadjiev, Stefan, Cameron, David C., Chen, Rong, Chubarov, Mikhail, Cremers, Veronique, Devi, Anjana, Drozd, Viktor, Elnikova, Liliya, Gottardi, Gloria, Grigoras, Kestutis, Hausmann, Dennis M., Hwang, Cheol Seong, Jen, Shih-Hui, Kallio, Tanja, Kanervo, Jaana, Khmelnitskiy, Ivan, Kim, Do Han, Klibanov, Lev, Koshtyal, Yury, Krause, A. Outi I., Kuhs, Jakob, Kaerkkaenen, Irina, Kaariainen, Marja-Leena, Kaariainen, Tommi, Lamagna, Luca, Lapicki, Adam A., Leskela, Markku, Lipsanen, Harri, Lyytinen, Jussi, Malkov, Anatoly, Malygin, Anatoly, Mennad, Abdelkader, Militzer, Christian, Molarius, Jyrki, Norek, Malgorzata, Ozgit-Akgun, Cagla, Panov, Mikhail, Pedersen, Henrik, Piallat, Fabien, Popov, Georgi, Puurunen, Riikka L., Rampelberg, Geert, Ras, Robin H. A., Rauwel, Erwan, Roozeboom, Fred, Sajavaara, Timo, Salami, Hossein, Savin, Hele, Schneider, Nathanaelle, Seidel, Thomas E., Sundqvist, Jonas, Suyatin, Dmitry B., Törndahl, Tobias, van Ommen, J. Ruud, Wiemer, Claudia, Ylivaara, Oili M. E., Yurkevich, Oksana, Ahvenniemi, Esko, Akbashev, Andrew R., Ali, Saima, Bechelany, Mikhael, Berdova, Maria, Boyadjiev, Stefan, Cameron, David C., Chen, Rong, Chubarov, Mikhail, Cremers, Veronique, Devi, Anjana, Drozd, Viktor, Elnikova, Liliya, Gottardi, Gloria, Grigoras, Kestutis, Hausmann, Dennis M., Hwang, Cheol Seong, Jen, Shih-Hui, Kallio, Tanja, Kanervo, Jaana, Khmelnitskiy, Ivan, Kim, Do Han, Klibanov, Lev, Koshtyal, Yury, Krause, A. Outi I., Kuhs, Jakob, Kaerkkaenen, Irina, Kaariainen, Marja-Leena, Kaariainen, Tommi, Lamagna, Luca, Lapicki, Adam A., Leskela, Markku, Lipsanen, Harri, Lyytinen, Jussi, Malkov, Anatoly, Malygin, Anatoly, Mennad, Abdelkader, Militzer, Christian, Molarius, Jyrki, Norek, Malgorzata, Ozgit-Akgun, Cagla, Panov, Mikhail, Pedersen, Henrik, Piallat, Fabien, Popov, Georgi, Puurunen, Riikka L., Rampelberg, Geert, Ras, Robin H. A., Rauwel, Erwan, Roozeboom, Fred, Sajavaara, Timo, Salami, Hossein, Savin, Hele, Schneider, Nathanaelle, Seidel, Thomas E., Sundqvist, Jonas, Suyatin, Dmitry B., Törndahl, Tobias, van Ommen, J. Ruud, Wiemer, Claudia, Ylivaara, Oili M. E., and Yurkevich, Oksana

Abstract

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.

Published
2017
Full Text
View/download PDF

11. Recommended reading list of early publications on atomic layer deposition-Outcome of the 'Virtual Project on the History of ALD'

Author

Ahvenniemi, Esko, Akbashev, Andrew R., Ali, Saima, Bechelany, Mikhael, Berdova, Maria, Boyadjiev, Stefan, Cameron, David C., Chen, Rong, Chubarov, Mikhail, Cremers, Veronique, Devi, Anjana, Drozd, Viktor, Elnikova, Liliya, Gottardi, Gloria, Grigoras, Kestutis, Hausmann, Dennis M., Hwang, Cheol Seong, Jen, Shih-Hui, Kallio, Tanja, Kanervo, Jaana, Khmelnitskiy, Ivan, Kim, Do Han, Klibanov, Lev, Koshtyal, Yury, Krause, A. Outi I., Kuhs, Jakob, Kaerkkaenen, Irina, Kaariainen, Marja-Leena, Kaariainen, Tommi, Lamagna, Luca, Lapicki, Adam A., Leskela, Markku, Lipsanen, Harri, Lyytinen, Jussi, Malkov, Anatoly, Malygin, Anatoly, Mennad, Abdelkader, Militzer, Christian, Molarius, Jyrki, Norek, Malgorzata, Ozgit-Akgun, Cagla, Panov, Mikhail, Pedersen, Henrik, Piallat, Fabien, Popov, Georgi, Puurunen, Riikka L., Rampelberg, Geert, Ras, Robin H. A., Rauwel, Erwan, Roozeboom, Fred, Sajavaara, Timo, Salami, Hossein, Savin, Hele, Schneider, Nathanaelle, Seidel, Thomas E., Sundqvist, Jonas, Suyatin, Dmitry B., Törndahl, Tobias, van Ommen, J. Ruud, Wiemer, Claudia, Ylivaara, Oili M. E., Yurkevich, Oksana, Ahvenniemi, Esko, Akbashev, Andrew R., Ali, Saima, Bechelany, Mikhael, Berdova, Maria, Boyadjiev, Stefan, Cameron, David C., Chen, Rong, Chubarov, Mikhail, Cremers, Veronique, Devi, Anjana, Drozd, Viktor, Elnikova, Liliya, Gottardi, Gloria, Grigoras, Kestutis, Hausmann, Dennis M., Hwang, Cheol Seong, Jen, Shih-Hui, Kallio, Tanja, Kanervo, Jaana, Khmelnitskiy, Ivan, Kim, Do Han, Klibanov, Lev, Koshtyal, Yury, Krause, A. Outi I., Kuhs, Jakob, Kaerkkaenen, Irina, Kaariainen, Marja-Leena, Kaariainen, Tommi, Lamagna, Luca, Lapicki, Adam A., Leskela, Markku, Lipsanen, Harri, Lyytinen, Jussi, Malkov, Anatoly, Malygin, Anatoly, Mennad, Abdelkader, Militzer, Christian, Molarius, Jyrki, Norek, Malgorzata, Ozgit-Akgun, Cagla, Panov, Mikhail, Pedersen, Henrik, Piallat, Fabien, Popov, Georgi, Puurunen, Riikka L., Rampelberg, Geert, Ras, Robin H. A., Rauwel, Erwan, Roozeboom, Fred, Sajavaara, Timo, Salami, Hossein, Savin, Hele, Schneider, Nathanaelle, Seidel, Thomas E., Sundqvist, Jonas, Suyatin, Dmitry B., Törndahl, Tobias, van Ommen, J. Ruud, Wiemer, Claudia, Ylivaara, Oili M. E., and Yurkevich, Oksana

Abstract

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.

Published
2017
Full Text
View/download PDF

12. Interfacial chemical bonding-mediated ionic resistive switching.

Author

Moon, Hyeongjoo, Moon, Hyeongjoo, Zade, Vishal, Kang, Hung-Sen, Han, Jin-Woo, Lee, Eunseok, Hwang, Cheol Seong, Lee, Min Hwan, Moon, Hyeongjoo, Moon, Hyeongjoo, Zade, Vishal, Kang, Hung-Sen, Han, Jin-Woo, Lee, Eunseok, Hwang, Cheol Seong, and Lee, Min Hwan

Abstract

In this paper, we present a unique resistive switching (RS) mechanism study of Pt/TiO2/Pt cell, one of the most widely studied RS system, by focusing on the role of interfacial bonding at the active TiO2-Pt interface, as opposed to a physico-chemical change within the RS film. This study was enabled by the use of a non-conventional scanning probe-based setup. The nanoscale cell is formed by bringing a Pt/TiO2-coated atomic force microscope tip into contact with a flat substrate coated with Pt. The study reveals that electrical resistance and interfacial bonding status are highly coupled together. An oxygen-mediated chemical bonding at the active interface between TiO2 and Pt is a necessary condition for a non-polar low-resistance state, and a reset switching process disconnects the chemical bonding. Bipolar switching mode did not involve the chemical bonding. The nature of chemical bonding at the TiO2-metal interface is further studied by density functional theory calculations.

Published
2017

13. Review Article: Recommended reading list of early publications on atomic layer deposition - Outcome of the 'virtual Project on the History of ALD'

Author

Ahvenniemi, Esko (author), Akbashev, Andrew R. (author), Ali, Saima (author), Bechelany, Mikhael (author), Berdova, Maria (author), Boyadjiev, Stefan (author), Cameron, David C. (author), Chen, R. (author), Chubarov, Mikhail (author), Cremers, Veronique (author), Devi, Anjana (author), Drozd, Viktor (author), Elnikova, Liliya (author), Gottardi, Gloria (author), Grigoras, Kestutis (author), Hausmann, Dennis M. (author), Hwang, Cheol Seong (author), Jen, Shih Hui (author), Kallio, Tanja (author), Kanervo, Jaana (author), Khmelnitskiy, Ivan (author), Kim, Do Han (author), Klibanov, Lev (author), Koshtyal, Yury (author), Krause, A. Outi I (author), Kuhs, Jakob (author), Kärkkänen, Irina (author), Kääriäinen, Marja Leena (author), Kääriäinen, Tommi (author), Lamagna, Luca (author), Łapicki, Adam A. (author), Leskelä, Markku (author), Lipsanen, Harri (author), Lyytinen, Jussi (author), Malkov, Anatoly (author), Malygin, Anatoly (author), Mennad, Abdelkader (author), Militzer, Christian (author), Molarius, Jyrki (author), Norek, Małgorzata (author), Özgit-Akgün, Çaǧla (author), Panov, Mikhail (author), Pedersen, Henrik (author), Piallat, Fabien (author), Popov, Georgi (author), Puurunen, Riikka L. (author), Rampelberg, Geert (author), Ras, Robin H A (author), Rauwel, Erwan (author), Roozeboom, Fred (author), Sajavaara, Timo (author), Salami, Hossein (author), Savin, Hele (author), Schneider, Nathanaelle (author), Seidel, Thomas E. (author), Sundqvist, Jonas (author), Suyatin, Dmitry B. (author), Törndahl, Tobias (author), van Ommen, J.R. (author), Wiemer, Claudia (author), Ylivaara, Oili M E (author), Yurkevich, Oksana (author), Ahvenniemi, Esko (author), Akbashev, Andrew R. (author), Ali, Saima (author), Bechelany, Mikhael (author), Berdova, Maria (author), Boyadjiev, Stefan (author), Cameron, David C. (author), Chen, R. (author), Chubarov, Mikhail (author), Cremers, Veronique (author), Devi, Anjana (author), Drozd, Viktor (author), Elnikova, Liliya (author), Gottardi, Gloria (author), Grigoras, Kestutis (author), Hausmann, Dennis M. (author), Hwang, Cheol Seong (author), Jen, Shih Hui (author), Kallio, Tanja (author), Kanervo, Jaana (author), Khmelnitskiy, Ivan (author), Kim, Do Han (author), Klibanov, Lev (author), Koshtyal, Yury (author), Krause, A. Outi I (author), Kuhs, Jakob (author), Kärkkänen, Irina (author), Kääriäinen, Marja Leena (author), Kääriäinen, Tommi (author), Lamagna, Luca (author), Łapicki, Adam A. (author), Leskelä, Markku (author), Lipsanen, Harri (author), Lyytinen, Jussi (author), Malkov, Anatoly (author), Malygin, Anatoly (author), Mennad, Abdelkader (author), Militzer, Christian (author), Molarius, Jyrki (author), Norek, Małgorzata (author), Özgit-Akgün, Çaǧla (author), Panov, Mikhail (author), Pedersen, Henrik (author), Piallat, Fabien (author), Popov, Georgi (author), Puurunen, Riikka L. (author), Rampelberg, Geert (author), Ras, Robin H A (author), Rauwel, Erwan (author), Roozeboom, Fred (author), Sajavaara, Timo (author), Salami, Hossein (author), Savin, Hele (author), Schneider, Nathanaelle (author), Seidel, Thomas E. (author), Sundqvist, Jonas (author), Suyatin, Dmitry B. (author), Törndahl, Tobias (author), van Ommen, J.R. (author), Wiemer, Claudia (author), Ylivaara, Oili M E (author), and Yurkevich, Oksana (author)

Abstract

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency., Railway Engineering, ChemE/Product and Process Engineering

Published
2017
Full Text
View/download PDF

14. Interfacial chemical bonding-mediated ionic resistive switching.

Author

Moon, Hyeongjoo, Moon, Hyeongjoo, Zade, Vishal, Kang, Hung-Sen, Han, Jin-Woo, Lee, Eunseok, Hwang, Cheol Seong, Lee, Min Hwan, Moon, Hyeongjoo, Moon, Hyeongjoo, Zade, Vishal, Kang, Hung-Sen, Han, Jin-Woo, Lee, Eunseok, Hwang, Cheol Seong, and Lee, Min Hwan

Abstract

In this paper, we present a unique resistive switching (RS) mechanism study of Pt/TiO2/Pt cell, one of the most widely studied RS system, by focusing on the role of interfacial bonding at the active TiO2-Pt interface, as opposed to a physico-chemical change within the RS film. This study was enabled by the use of a non-conventional scanning probe-based setup. The nanoscale cell is formed by bringing a Pt/TiO2-coated atomic force microscope tip into contact with a flat substrate coated with Pt. The study reveals that electrical resistance and interfacial bonding status are highly coupled together. An oxygen-mediated chemical bonding at the active interface between TiO2 and Pt is a necessary condition for a non-polar low-resistance state, and a reset switching process disconnects the chemical bonding. Bipolar switching mode did not involve the chemical bonding. The nature of chemical bonding at the TiO2-metal interface is further studied by density functional theory calculations.

Published
2017

15. Recommended reading list of early publications on atomic layer deposition-Outcome of the 'Virtual Project on the History of ALD'

Author

Ahvenniemi, Esko, Akbashev, Andrew R., Ali, Saima, Bechelany, Mikhael, Berdova, Maria, Boyadjiev, Stefan, Cameron, David C., Chen, Rong, Chubarov, Mikhail, Cremers, Veronique, Devi, Anjana, Drozd, Viktor, Elnikova, Liliya, Gottardi, Gloria, Grigoras, Kestutis, Hausmann, Dennis M., Hwang, Cheol Seong, Jen, Shih-Hui, Kallio, Tanja, Kanervo, Jaana, Khmelnitskiy, Ivan, Kim, Do Han, Klibanov, Lev, Koshtyal, Yury, Krause, A. Outi I., Kuhs, Jakob, Kaerkkaenen, Irina, Kaariainen, Marja-Leena, Kaariainen, Tommi, Lamagna, Luca, Lapicki, Adam A., Leskela, Markku, Lipsanen, Harri, Lyytinen, Jussi, Malkov, Anatoly, Malygin, Anatoly, Mennad, Abdelkader, Militzer, Christian, Molarius, Jyrki, Norek, Malgorzata, Ozgit-Akgun, Cagla, Panov, Mikhail, Pedersen, Henrik, Piallat, Fabien, Popov, Georgi, Puurunen, Riikka L., Rampelberg, Geert, Ras, Robin H. A., Rauwel, Erwan, Roozeboom, Fred, Sajavaara, Timo, Salami, Hossein, Savin, Hele, Schneider, Nathanaelle, Seidel, Thomas E., Sundqvist, Jonas, Suyatin, Dmitry B., Törndahl, Tobias, van Ommen, J. Ruud, Wiemer, Claudia, Ylivaara, Oili M. E., Yurkevich, Oksana, Ahvenniemi, Esko, Akbashev, Andrew R., Ali, Saima, Bechelany, Mikhael, Berdova, Maria, Boyadjiev, Stefan, Cameron, David C., Chen, Rong, Chubarov, Mikhail, Cremers, Veronique, Devi, Anjana, Drozd, Viktor, Elnikova, Liliya, Gottardi, Gloria, Grigoras, Kestutis, Hausmann, Dennis M., Hwang, Cheol Seong, Jen, Shih-Hui, Kallio, Tanja, Kanervo, Jaana, Khmelnitskiy, Ivan, Kim, Do Han, Klibanov, Lev, Koshtyal, Yury, Krause, A. Outi I., Kuhs, Jakob, Kaerkkaenen, Irina, Kaariainen, Marja-Leena, Kaariainen, Tommi, Lamagna, Luca, Lapicki, Adam A., Leskela, Markku, Lipsanen, Harri, Lyytinen, Jussi, Malkov, Anatoly, Malygin, Anatoly, Mennad, Abdelkader, Militzer, Christian, Molarius, Jyrki, Norek, Malgorzata, Ozgit-Akgun, Cagla, Panov, Mikhail, Pedersen, Henrik, Piallat, Fabien, Popov, Georgi, Puurunen, Riikka L., Rampelberg, Geert, Ras, Robin H. A., Rauwel, Erwan, Roozeboom, Fred, Sajavaara, Timo, Salami, Hossein, Savin, Hele, Schneider, Nathanaelle, Seidel, Thomas E., Sundqvist, Jonas, Suyatin, Dmitry B., Törndahl, Tobias, van Ommen, J. Ruud, Wiemer, Claudia, Ylivaara, Oili M. E., and Yurkevich, Oksana

Abstract

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.

Published
2017
Full Text
View/download PDF

16. Review Article: Recommended reading list of early publications on atomic layer deposition - Outcome of the 'virtual Project on the History of ALD'

Author

Ahvenniemi, Esko (author), Akbashev, Andrew R. (author), Ali, Saima (author), Bechelany, Mikhael (author), Berdova, Maria (author), Boyadjiev, Stefan (author), Cameron, David C. (author), Chen, R. (author), Chubarov, Mikhail (author), Cremers, Veronique (author), Devi, Anjana (author), Drozd, Viktor (author), Elnikova, Liliya (author), Gottardi, Gloria (author), Grigoras, Kestutis (author), Hausmann, Dennis M. (author), Hwang, Cheol Seong (author), Jen, Shih Hui (author), Kallio, Tanja (author), Kanervo, Jaana (author), Khmelnitskiy, Ivan (author), Kim, Do Han (author), Klibanov, Lev (author), Koshtyal, Yury (author), Krause, A. Outi I (author), Kuhs, Jakob (author), Kärkkänen, Irina (author), Kääriäinen, Marja Leena (author), Kääriäinen, Tommi (author), Lamagna, Luca (author), Łapicki, Adam A. (author), Leskelä, Markku (author), Lipsanen, Harri (author), Lyytinen, Jussi (author), Malkov, Anatoly (author), Malygin, Anatoly (author), Mennad, Abdelkader (author), Militzer, Christian (author), Molarius, Jyrki (author), Norek, Małgorzata (author), Özgit-Akgün, Çaǧla (author), Panov, Mikhail (author), Pedersen, Henrik (author), Piallat, Fabien (author), Popov, Georgi (author), Puurunen, Riikka L. (author), Rampelberg, Geert (author), Ras, Robin H A (author), Rauwel, Erwan (author), Roozeboom, Fred (author), Sajavaara, Timo (author), Salami, Hossein (author), Savin, Hele (author), Schneider, Nathanaelle (author), Seidel, Thomas E. (author), Sundqvist, Jonas (author), Suyatin, Dmitry B. (author), Törndahl, Tobias (author), van Ommen, J.R. (author), Wiemer, Claudia (author), Ylivaara, Oili M E (author), Yurkevich, Oksana (author), Ahvenniemi, Esko (author), Akbashev, Andrew R. (author), Ali, Saima (author), Bechelany, Mikhael (author), Berdova, Maria (author), Boyadjiev, Stefan (author), Cameron, David C. (author), Chen, R. (author), Chubarov, Mikhail (author), Cremers, Veronique (author), Devi, Anjana (author), Drozd, Viktor (author), Elnikova, Liliya (author), Gottardi, Gloria (author), Grigoras, Kestutis (author), Hausmann, Dennis M. (author), Hwang, Cheol Seong (author), Jen, Shih Hui (author), Kallio, Tanja (author), Kanervo, Jaana (author), Khmelnitskiy, Ivan (author), Kim, Do Han (author), Klibanov, Lev (author), Koshtyal, Yury (author), Krause, A. Outi I (author), Kuhs, Jakob (author), Kärkkänen, Irina (author), Kääriäinen, Marja Leena (author), Kääriäinen, Tommi (author), Lamagna, Luca (author), Łapicki, Adam A. (author), Leskelä, Markku (author), Lipsanen, Harri (author), Lyytinen, Jussi (author), Malkov, Anatoly (author), Malygin, Anatoly (author), Mennad, Abdelkader (author), Militzer, Christian (author), Molarius, Jyrki (author), Norek, Małgorzata (author), Özgit-Akgün, Çaǧla (author), Panov, Mikhail (author), Pedersen, Henrik (author), Piallat, Fabien (author), Popov, Georgi (author), Puurunen, Riikka L. (author), Rampelberg, Geert (author), Ras, Robin H A (author), Rauwel, Erwan (author), Roozeboom, Fred (author), Sajavaara, Timo (author), Salami, Hossein (author), Savin, Hele (author), Schneider, Nathanaelle (author), Seidel, Thomas E. (author), Sundqvist, Jonas (author), Suyatin, Dmitry B. (author), Törndahl, Tobias (author), van Ommen, J.R. (author), Wiemer, Claudia (author), Ylivaara, Oili M E (author), and Yurkevich, Oksana (author)

Abstract

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency., Railway Engineering, ChemE/Product and Process Engineering

Published
2017
Full Text
View/download PDF

17. Recommended reading list of early publications on atomic layer deposition-Outcome of the 'Virtual Project on the History of ALD'

Author

Ahvenniemi, Esko, Akbashev, Andrew R., Ali, Saima, Bechelany, Mikhael, Berdova, Maria, Boyadjiev, Stefan, Cameron, David C., Chen, Rong, Chubarov, Mikhail, Cremers, Veronique, Devi, Anjana, Drozd, Viktor, Elnikova, Liliya, Gottardi, Gloria, Grigoras, Kestutis, Hausmann, Dennis M., Hwang, Cheol Seong, Jen, Shih-Hui, Kallio, Tanja, Kanervo, Jaana, Khmelnitskiy, Ivan, Kim, Do Han, Klibanov, Lev, Koshtyal, Yury, Krause, A. Outi I., Kuhs, Jakob, Kaerkkaenen, Irina, Kaariainen, Marja-Leena, Kaariainen, Tommi, Lamagna, Luca, Lapicki, Adam A., Leskela, Markku, Lipsanen, Harri, Lyytinen, Jussi, Malkov, Anatoly, Malygin, Anatoly, Mennad, Abdelkader, Militzer, Christian, Molarius, Jyrki, Norek, Malgorzata, Ozgit-Akgun, Cagla, Panov, Mikhail, Pedersen, Henrik, Piallat, Fabien, Popov, Georgi, Puurunen, Riikka L., Rampelberg, Geert, Ras, Robin H. A., Rauwel, Erwan, Roozeboom, Fred, Sajavaara, Timo, Salami, Hossein, Savin, Hele, Schneider, Nathanaelle, Seidel, Thomas E., Sundqvist, Jonas, Suyatin, Dmitry B., Törndahl, Tobias, van Ommen, J. Ruud, Wiemer, Claudia, Ylivaara, Oili M. E., Yurkevich, Oksana, Ahvenniemi, Esko, Akbashev, Andrew R., Ali, Saima, Bechelany, Mikhael, Berdova, Maria, Boyadjiev, Stefan, Cameron, David C., Chen, Rong, Chubarov, Mikhail, Cremers, Veronique, Devi, Anjana, Drozd, Viktor, Elnikova, Liliya, Gottardi, Gloria, Grigoras, Kestutis, Hausmann, Dennis M., Hwang, Cheol Seong, Jen, Shih-Hui, Kallio, Tanja, Kanervo, Jaana, Khmelnitskiy, Ivan, Kim, Do Han, Klibanov, Lev, Koshtyal, Yury, Krause, A. Outi I., Kuhs, Jakob, Kaerkkaenen, Irina, Kaariainen, Marja-Leena, Kaariainen, Tommi, Lamagna, Luca, Lapicki, Adam A., Leskela, Markku, Lipsanen, Harri, Lyytinen, Jussi, Malkov, Anatoly, Malygin, Anatoly, Mennad, Abdelkader, Militzer, Christian, Molarius, Jyrki, Norek, Malgorzata, Ozgit-Akgun, Cagla, Panov, Mikhail, Pedersen, Henrik, Piallat, Fabien, Popov, Georgi, Puurunen, Riikka L., Rampelberg, Geert, Ras, Robin H. A., Rauwel, Erwan, Roozeboom, Fred, Sajavaara, Timo, Salami, Hossein, Savin, Hele, Schneider, Nathanaelle, Seidel, Thomas E., Sundqvist, Jonas, Suyatin, Dmitry B., Törndahl, Tobias, van Ommen, J. Ruud, Wiemer, Claudia, Ylivaara, Oili M. E., and Yurkevich, Oksana

Abstract

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.

Published
2017
Full Text
View/download PDF

18. Recommended reading list of early publications on atomic layer deposition-Outcome of the 'Virtual Project on the History of ALD'

Author

Ahvenniemi, Esko, Akbashev, Andrew R., Ali, Saima, Bechelany, Mikhael, Berdova, Maria, Boyadjiev, Stefan, Cameron, David C., Chen, Rong, Chubarov, Mikhail, Cremers, Veronique, Devi, Anjana, Drozd, Viktor, Elnikova, Liliya, Gottardi, Gloria, Grigoras, Kestutis, Hausmann, Dennis M., Hwang, Cheol Seong, Jen, Shih-Hui, Kallio, Tanja, Kanervo, Jaana, Khmelnitskiy, Ivan, Kim, Do Han, Klibanov, Lev, Koshtyal, Yury, Krause, A. Outi I., Kuhs, Jakob, Kaerkkaenen, Irina, Kaariainen, Marja-Leena, Kaariainen, Tommi, Lamagna, Luca, Lapicki, Adam A., Leskela, Markku, Lipsanen, Harri, Lyytinen, Jussi, Malkov, Anatoly, Malygin, Anatoly, Mennad, Abdelkader, Militzer, Christian, Molarius, Jyrki, Norek, Malgorzata, Ozgit-Akgun, Cagla, Panov, Mikhail, Pedersen, Henrik, Piallat, Fabien, Popov, Georgi, Puurunen, Riikka L., Rampelberg, Geert, Ras, Robin H. A., Rauwel, Erwan, Roozeboom, Fred, Sajavaara, Timo, Salami, Hossein, Savin, Hele, Schneider, Nathanaelle, Seidel, Thomas E., Sundqvist, Jonas, Suyatin, Dmitry B., Törndahl, Tobias, van Ommen, J. Ruud, Wiemer, Claudia, Ylivaara, Oili M. E., Yurkevich, Oksana, Ahvenniemi, Esko, Akbashev, Andrew R., Ali, Saima, Bechelany, Mikhael, Berdova, Maria, Boyadjiev, Stefan, Cameron, David C., Chen, Rong, Chubarov, Mikhail, Cremers, Veronique, Devi, Anjana, Drozd, Viktor, Elnikova, Liliya, Gottardi, Gloria, Grigoras, Kestutis, Hausmann, Dennis M., Hwang, Cheol Seong, Jen, Shih-Hui, Kallio, Tanja, Kanervo, Jaana, Khmelnitskiy, Ivan, Kim, Do Han, Klibanov, Lev, Koshtyal, Yury, Krause, A. Outi I., Kuhs, Jakob, Kaerkkaenen, Irina, Kaariainen, Marja-Leena, Kaariainen, Tommi, Lamagna, Luca, Lapicki, Adam A., Leskela, Markku, Lipsanen, Harri, Lyytinen, Jussi, Malkov, Anatoly, Malygin, Anatoly, Mennad, Abdelkader, Militzer, Christian, Molarius, Jyrki, Norek, Malgorzata, Ozgit-Akgun, Cagla, Panov, Mikhail, Pedersen, Henrik, Piallat, Fabien, Popov, Georgi, Puurunen, Riikka L., Rampelberg, Geert, Ras, Robin H. A., Rauwel, Erwan, Roozeboom, Fred, Sajavaara, Timo, Salami, Hossein, Savin, Hele, Schneider, Nathanaelle, Seidel, Thomas E., Sundqvist, Jonas, Suyatin, Dmitry B., Törndahl, Tobias, van Ommen, J. Ruud, Wiemer, Claudia, Ylivaara, Oili M. E., and Yurkevich, Oksana

Abstract

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.

Published
2017
Full Text
View/download PDF

19. Markov chain Hebbian learning algorithm with ternary synaptic units

Author

Kim, Guhyun, Kornijcuk, Vladimir, Kim, Dohun, Kim, Inho, Kim, Jaewook, Woo, Hyo Cheon, Kim, Ji Hun, Hwang, Cheol Seong, Jeong, Doo Seok, Kim, Guhyun, Kornijcuk, Vladimir, Kim, Dohun, Kim, Inho, Kim, Jaewook, Woo, Hyo Cheon, Kim, Ji Hun, Hwang, Cheol Seong, and Jeong, Doo Seok

Abstract

In spite of remarkable progress in machine learning techniques, the state-of-the-art machine learning algorithms often keep machines from real-time learning (online learning) due in part to computational complexity in parameter optimization. As an alternative, a learning algorithm to train a memory in real time is proposed, which is named as the Markov chain Hebbian learning algorithm. The algorithm pursues efficient memory use during training in that (i) the weight matrix has ternary elements (-1, 0, 1) and (ii) each update follows a Markov chain--the upcoming update does not need past weight memory. The algorithm was verified by two proof-of-concept tasks (handwritten digit recognition and multiplication table memorization) in which numbers were taken as symbols. Particularly, the latter bases multiplication arithmetic on memory, which may be analogous to humans' mental arithmetic. The memory-based multiplication arithmetic feasibly offers the basis of factorization, supporting novel insight into the arithmetic., Comment: 25 pages, 4 figures

Published
2017

20. Bioresorbable Electronic Stent Integrated with Therapeutic Nanoparticles for Endovascular Diseases

Author

Son, Donghee, Lee, Jongha, Lee, Dong Jun, Ghaffari, Roozbeh, Yun, Sumin, Kim, Seok Joo, Lee, Ji Eun, Cho, Hye Rim, Yoon, Soonho, Yang, Shixuan, Lee, Seunghyun, Qiao, Shutao, Ling, Daishun, Shin, Sanghun, Song, Jun-Kyul, Kim, Jaemin, Kim, Taeho, Lee, Hakyong, Kim, Jonghoon, Soh, Min, Lee, Nohyun, Hwang, Cheol Seong, Nam, Sangwook, Lu, Nanshu, Hyeon, Taeghwan, Choi, Seung Hong, Kim, Dae-Hyeong, Son, Donghee, Lee, Jongha, Lee, Dong Jun, Ghaffari, Roozbeh, Yun, Sumin, Kim, Seok Joo, Lee, Ji Eun, Cho, Hye Rim, Yoon, Soonho, Yang, Shixuan, Lee, Seunghyun, Qiao, Shutao, Ling, Daishun, Shin, Sanghun, Song, Jun-Kyul, Kim, Jaemin, Kim, Taeho, Lee, Hakyong, Kim, Jonghoon, Soh, Min, Lee, Nohyun, Hwang, Cheol Seong, Nam, Sangwook, Lu, Nanshu, Hyeon, Taeghwan, Choi, Seung Hong, and Kim, Dae-Hyeong

Abstract

Implantable endovascular devices such as bare metal, drug eluting, and bioresorbable stents have transformed interventional care by providing continuous structural and mechanical support to many peripheral, neural, and coronary arteries affected by blockage. Although effective in achieving immediate restoration of blood flow, the long-term re-endothelialization and inflammation induced by mechanical stents are difficult to diagnose or treat. Here we present nanomaterial designs and integration strategies for the bioresorbable electronic stent with drug-infused functionalized nanoparticles to enable flow sensing, temperature monitoring, data storage, wireless power/data transmission, inflammation suppression, localized drug delivery, and hyperthermia therapy. In vivo and ex vivo animal experiments as well as in vitro cell studies demonstrate the previously unrecognized potential for bioresorbable electronic implants coupled with bioinert therapeutic nanoparticles in the endovascular system.

Published
2015
Full Text
View/download PDF

21. Bioresorbable Electronic Stent Integrated with Therapeutic Nanoparticles for Endovascular Diseases

Author

Son, Donghee, Lee, Jongha, Lee, Dong Jun, Ghaffari, Roozbeh, Yun, Sumin, Kim, Seok Joo, Lee, Ji Eun, Cho, Hye Rim, Yoon, Soonho, Yang, Shixuan, Lee, Seunghyun, Qiao, Shutao, Ling, Daishun, Shin, Sanghun, Song, Jun-Kyul, Kim, Jaemin, Kim, Taeho, Lee, Hakyong, Kim, Jonghoon, Soh, Min, Lee, Nohyun, Hwang, Cheol Seong, Nam, Sangwook, Lu, Nanshu, Hyeon, Taeghwan, Choi, Seung Hong, Kim, Dae-Hyeong, Son, Donghee, Lee, Jongha, Lee, Dong Jun, Ghaffari, Roozbeh, Yun, Sumin, Kim, Seok Joo, Lee, Ji Eun, Cho, Hye Rim, Yoon, Soonho, Yang, Shixuan, Lee, Seunghyun, Qiao, Shutao, Ling, Daishun, Shin, Sanghun, Song, Jun-Kyul, Kim, Jaemin, Kim, Taeho, Lee, Hakyong, Kim, Jonghoon, Soh, Min, Lee, Nohyun, Hwang, Cheol Seong, Nam, Sangwook, Lu, Nanshu, Hyeon, Taeghwan, Choi, Seung Hong, and Kim, Dae-Hyeong

Abstract

Implantable endovascular devices such as bare metal, drug eluting, and bioresorbable stents have transformed interventional care by providing continuous structural and mechanical support to many peripheral, neural, and coronary arteries affected by blockage. Although effective in achieving immediate restoration of blood flow, the long-term re-endothelialization and inflammation induced by mechanical stents are difficult to diagnose or treat. Here we present nanomaterial designs and integration strategies for the bioresorbable electronic stent with drug-infused functionalized nanoparticles to enable flow sensing, temperature monitoring, data storage, wireless power/data transmission, inflammation suppression, localized drug delivery, and hyperthermia therapy. In vivo and ex vivo animal experiments as well as in vitro cell studies demonstrate the previously unrecognized potential for bioresorbable electronic implants coupled with bioinert therapeutic nanoparticles in the endovascular system.

Published
2015
Full Text
View/download PDF

22. Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM.

Author

Song, Seul Ji, Song, Seul Ji, Seok, Jun Yeong, Yoon, Jung Ho, Kim, Kyung Min, Kim, Gun Hwan, Lee, Min Hwan, Hwang, Cheol Seong, Song, Seul Ji, Song, Seul Ji, Seok, Jun Yeong, Yoon, Jung Ho, Kim, Kyung Min, Kim, Gun Hwan, Lee, Min Hwan, and Hwang, Cheol Seong

Abstract

Unipolar resistance switching (RS) in TiO2 thin films originates from the repeated formation and rupture of the Magnéli phase conducting filaments through repeated nano-scale phase transitions. By applying the Johnson-Mehl-Avrami (JMA) type kinetic model to the careful analysis on the evolution of transient current in a pulse-switching, it was possible to elucidate the material specific evolution of the Magnéli phase filament. This methodology was applied to the two types of TiO2 films grown by plasma-enhanced atomic layer deposition (PEALD) and sputtering. These two samples have structurally and electrically distinctive properties: PEALD film exhibited high variability in switching parameters and required an electroforming while sputtered film showed higher uniformity without distinct electroforming process. The JMA-type kinetic analysis of the RS behaviors revealed that the rejuvenation of the filament is accomplished by repeated one-dimensional nucleation followed by a two-dimensional growth in PEALD samples, whereas one-dimensional nucleation-free mechanism dominates in sputtered films.

Published
2013

23. Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM.

Author

Song, Seul Ji, Song, Seul Ji, Seok, Jun Yeong, Yoon, Jung Ho, Kim, Kyung Min, Kim, Gun Hwan, Lee, Min Hwan, Hwang, Cheol Seong, Song, Seul Ji, Song, Seul Ji, Seok, Jun Yeong, Yoon, Jung Ho, Kim, Kyung Min, Kim, Gun Hwan, Lee, Min Hwan, and Hwang, Cheol Seong

Abstract

Unipolar resistance switching (RS) in TiO2 thin films originates from the repeated formation and rupture of the Magnéli phase conducting filaments through repeated nano-scale phase transitions. By applying the Johnson-Mehl-Avrami (JMA) type kinetic model to the careful analysis on the evolution of transient current in a pulse-switching, it was possible to elucidate the material specific evolution of the Magnéli phase filament. This methodology was applied to the two types of TiO2 films grown by plasma-enhanced atomic layer deposition (PEALD) and sputtering. These two samples have structurally and electrically distinctive properties: PEALD film exhibited high variability in switching parameters and required an electroforming while sputtered film showed higher uniformity without distinct electroforming process. The JMA-type kinetic analysis of the RS behaviors revealed that the rejuvenation of the filament is accomplished by repeated one-dimensional nucleation followed by a two-dimensional growth in PEALD samples, whereas one-dimensional nucleation-free mechanism dominates in sputtered films.

Published
2013

Catalog

Books, media, physical & digital resources
See catalog results