Search

Your search keyword '"Griffin N"' showing total 10 results
Start Over Author "Griffin N" Database OAIster
10 results on '"Griffin N"'

1. Visual Cultures: Feminist Perspectives

Author

ICON - Gender Studies, LS Kunst, cultuur en diversiteit, Buikema, R.L., Zarzycka, M., R. Buikema, G. Griffin, N. Lykke, ICON - Gender Studies, LS Kunst, cultuur en diversiteit, Buikema, R.L., Zarzycka, M., and R. Buikema, G. Griffin, N. Lykke

Published
2011

2. Visual Cultures: Feminist Perspectives

Author

ICON - Gender Studies, LS Kunst, cultuur en diversiteit, Buikema, R.L., Zarzycka, M., R. Buikema, G. Griffin, N. Lykke, ICON - Gender Studies, LS Kunst, cultuur en diversiteit, Buikema, R.L., Zarzycka, M., and R. Buikema, G. Griffin, N. Lykke

Published
2011

3. Visual Cultures: Feminist Perspectives

Author

ICON - Gender Studies, LS Kunst, cultuur en diversiteit, R. Buikema, G. Griffin, N. Lykke, Buikema, R.L., Zarzycka, M., ICON - Gender Studies, LS Kunst, cultuur en diversiteit, R. Buikema, G. Griffin, N. Lykke, Buikema, R.L., and Zarzycka, M.

Published
2011

6. n-type Si/SiGe resonant tunnelling diodes

Author

Paul, D.J., See, P., Zozoulenko, Igor, Berggren, Karl-Fredrik, Hollander, B., Mantl, S., Griffin, N., Coonan, B.P., Redmond, G., Crean, G.M., Paul, D.J., See, P., Zozoulenko, Igor, Berggren, Karl-Fredrik, Hollander, B., Mantl, S., Griffin, N., Coonan, B.P., Redmond, G., and Crean, G.M.

Abstract

Resonant tunnelling diodes (RTDs) have been fabricated using Si/SiGe heterolayers which demonstrate room temperature performance comparable to III-V technology. Peak current densities up to 282 kA cm-2 with peak-to-valley current ratios (PVCRs) of 2.4 have been demonstrated at room temperature in devices with dimensions of 5 × 5 µm2. Scaling the device size demonstrates that the peak current density is inversely proportional to the device area. It is suggested that this is related to thermal limitations in the device structure. Estimates are also produced for the maximum frequency of oscillations of the diodes which suggest that oscillators may operate with speeds comparable to III-V diodes. © 2002 Elsevier Science B.V. All rights reserved.

Published
2002
Full Text
View/download PDF

7. Si/SiGe electron resonant tunneling diodes with graded spacer wells

Author

Paul, D.J., See, P., Bates, R., Griffin, N., Coonan, B.P., Redmond, G., Crean, G.M., Zozoulenko, Igor, Berggren, Karl-Fredrik, Hollander, B., Mantl, S., Paul, D.J., See, P., Bates, R., Griffin, N., Coonan, B.P., Redmond, G., Crean, G.M., Zozoulenko, Igor, Berggren, Karl-Fredrik, Hollander, B., and Mantl, S.

Abstract

Resonant tunneling diodes have been fabricated using graded Si1 - xGex (x = 0.3?0.0) spacer wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.7Ge0.3 n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08 A/cm2 with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. © 2001 American Institute of Physics.

Published
2001
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results