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Extreme ultraviolet lithography is one of the most promising printing techniques for high volume semiconductor manufacturing at the 14 nm half-pitch device node and beyond. However, key challenges around EUV photoresist materials such as the exposure-dose sensitivity or the line-width roughness continue to impede the full adoption into industrial nanofab facilities. New metrology tools are required to address these challenges by helping to determine the impact of the EUV materials' properties and processing conditions on the roughness through the different step of the process. Here, we apply the resonant soft x-ray scattering (RSOXS) technique to gain insights into the structure of patterned EUV resists before the development step takes place. By using energies around the carbon absorption edge to take advantage of small differences in chemistry, the electronic density contrast between the exposed and unexposed regions of the resists could be enhanced in order to image the patterns with sub-nm precision. Critical-dimension grazing incidence small-angle X-ray scattering (CDGISAXS) was then performed at energies where the contrast was maximized, enabling the reconstruction of the 3D shape of the latent image. This demonstrates the potential of RSOXS to provide a high-resolution heightsensitive profile of patterned EUV resists, which will help to quantify the evolution of critical features, such as the line edge roughness, at each step of the nanofabrication process.

We present a lateral shearing interferometer suitable for high-NA EUV wavefront metrology. In this interferometer, a geometric model is used to accurately characterize and predict systematic errors that come from performing interferometry at high NA. This interferometer is compatible with various optical geometries, including systems where the image plane is tilted with respect to the optical axis, as in the Berkeley MET5. Simulation results show that the systematic errors in tilted geometries can be reduced by aligning the shearing interferometer grating and detector parallel to the image plane. Subsequent residual errors can be removed by linear fitting.

This paper provides experimental measurements of through-focus pattern shifts between contact holes in a dense array and a surrounding pattern of lines and spaces using the SHARP actinic microscope in Berkeley. Experimental values for pattern shift in EUV lithography due to 3D mask effects are extracted from SHARP microscope images and benchmarked with pattern shift values determined by rigorous simulations.