Search

Your search keyword '"FUCHS F"' showing total 80 results
Start Over Author "FUCHS F" Database OAIster
80 results on '"FUCHS F"'

1. The ANDANTE Project: A Worldwide Individual Data Meta-Analysis of the Effect of Sleep Apnea Treatment on Blood Pressure [El proyecto ANDANTE: un metanálisis a nivel mundial de datos individuales sobre el efecto del tratamiento de la apnea del sueño en la presión arterial]

Author

Pengo, M, Steier, J, Parati, G, Ayas, N, Barbe, F, Barnes, M, Campos-Rodriguez, F, Cistulli, P, Lloberes, P, Craig, S, Drager, L, Duran-Cantolla, J, Litvin and Evgeniya Elfimova, A, Esra, T, Giontella, A, Fava, C, Fuchs, S, Fuchs, F, Gagnadoux, F, Garcia-Rio, F, Javaheri and Daniel J Gottlieb, S, Hong, G, Grunstein, R, Hoyos, C, Joyeux-Faure, M, Liu, P, Lorenzi-Filho, G, Ip, M, Lui, M, Martinez-Garcia, M, Mcevoy, D, Mehra, R, Monasterio, C, Mcmillan, A, Morrell, M, Pamidi, S, Bilo, G, Lombardi, C, Peker, Y, Glos, M, Penzel, T, Pepin, J, Pepperell, J, Phillips, C, Quan, S, Quinnell, T, Salles, G, Salord, N, Sanchez-de-la-Torre, M, Irene Schwarz, E, Shaw, J, Shukla, G, Stradling, J, Thunstrom, E, Wang, J, Weaver, T, Zambon, A, Soranna, D, Zambra, G, Pengo M. F., Steier J., Parati G., Ayas N. T., Barbe F., Barnes M., Campos-Rodriguez F., Cistulli P., Lloberes P., Craig S., Drager L. F., Duran-Cantolla J., Litvin and Evgeniya Elfimova A., Esra T., Giontella A., Fava C., Fuchs S. C., Fuchs F. D., Gagnadoux F., Garcia-Rio F., Javaheri and Daniel J Gottlieb S., Hong G. -R., Grunstein R. R., Hoyos C. M., Joyeux-Faure M., Liu P. Y., Lorenzi-Filho G., Ip M. S. M., Lui M. M. S., Martinez-Garcia M. A., McEvoy D., Mehra R., Monasterio C., McMillan A., Morrell M. J., Pamidi S., Pengo M., Bilo G., Lombardi C., Peker Y., Glos M., Penzel T., Pepin J. -L., Pepperell J. C. T., Phillips C. L., Quan S. F., Quinnell T., Salles G. F., Salord N., Sanchez-de-la-Torre M., Irene Schwarz E., Shaw J. E., Shukla G., Stradling J., Thunstrom E., Wang J. -G., Weaver T. E., Zambon A., Soranna D., Zambra G., Pengo, M, Steier, J, Parati, G, Ayas, N, Barbe, F, Barnes, M, Campos-Rodriguez, F, Cistulli, P, Lloberes, P, Craig, S, Drager, L, Duran-Cantolla, J, Litvin and Evgeniya Elfimova, A, Esra, T, Giontella, A, Fava, C, Fuchs, S, Fuchs, F, Gagnadoux, F, Garcia-Rio, F, Javaheri and Daniel J Gottlieb, S, Hong, G, Grunstein, R, Hoyos, C, Joyeux-Faure, M, Liu, P, Lorenzi-Filho, G, Ip, M, Lui, M, Martinez-Garcia, M, Mcevoy, D, Mehra, R, Monasterio, C, Mcmillan, A, Morrell, M, Pamidi, S, Bilo, G, Lombardi, C, Peker, Y, Glos, M, Penzel, T, Pepin, J, Pepperell, J, Phillips, C, Quan, S, Quinnell, T, Salles, G, Salord, N, Sanchez-de-la-Torre, M, Irene Schwarz, E, Shaw, J, Shukla, G, Stradling, J, Thunstrom, E, Wang, J, Weaver, T, Zambon, A, Soranna, D, Zambra, G, Pengo M. F., Steier J., Parati G., Ayas N. T., Barbe F., Barnes M., Campos-Rodriguez F., Cistulli P., Lloberes P., Craig S., Drager L. F., Duran-Cantolla J., Litvin and Evgeniya Elfimova A., Esra T., Giontella A., Fava C., Fuchs S. C., Fuchs F. D., Gagnadoux F., Garcia-Rio F., Javaheri and Daniel J Gottlieb S., Hong G. -R., Grunstein R. R., Hoyos C. M., Joyeux-Faure M., Liu P. Y., Lorenzi-Filho G., Ip M. S. M., Lui M. M. S., Martinez-Garcia M. A., McEvoy D., Mehra R., Monasterio C., McMillan A., Morrell M. J., Pamidi S., Pengo M., Bilo G., Lombardi C., Peker Y., Glos M., Penzel T., Pepin J. -L., Pepperell J. C. T., Phillips C. L., Quan S. F., Quinnell T., Salles G. F., Salord N., Sanchez-de-la-Torre M., Irene Schwarz E., Shaw J. E., Shukla G., Stradling J., Thunstrom E., Wang J. -G., Weaver T. E., Zambon A., Soranna D., and Zambra G.

Published
2021

2. Triage in der Rheumatologie - eine Bestandsaufnahme

Author

Knitza, J, Fuchs, F, Morf, H, Mohn, J, Mühlensiepen, F, Ignatyev, Y, Bohr, D, Araujo, E, Bergmann, C, Simon, D, Kleyer, A, Vorbrüggen, W, Ramming, A, Distler, J, Bartz-Bazzanella, P, Schett, G, Welcker, M, Hueber, A, Knitza, J, Fuchs, F, Morf, H, Mohn, J, Mühlensiepen, F, Ignatyev, Y, Bohr, D, Araujo, E, Bergmann, C, Simon, D, Kleyer, A, Vorbrüggen, W, Ramming, A, Distler, J, Bartz-Bazzanella, P, Schett, G, Welcker, M, and Hueber, A

Published
2022

3. Triage in der Rheumatologie - eine Bestandsaufnahme

Author

Knitza, J, Fuchs, F, Morf, H, Mohn, J, Mühlensiepen, F, Ignatyev, Y, Bohr, D, Araujo, E, Bergmann, C, Simon, D, Kleyer, A, Vorbrüggen, W, Ramming, A, Distler, J, Bartz-Bazzanella, P, Schett, G, Welcker, M, Hueber, A, Knitza, J, Fuchs, F, Morf, H, Mohn, J, Mühlensiepen, F, Ignatyev, Y, Bohr, D, Araujo, E, Bergmann, C, Simon, D, Kleyer, A, Vorbrüggen, W, Ramming, A, Distler, J, Bartz-Bazzanella, P, Schett, G, Welcker, M, and Hueber, A

Published
2022

4. Polarization power spectra and dust cloud morphology

Author

Konstantinou, A., Pelgrims, V., Fuchs, F., Tassis, K., Konstantinou, A., Pelgrims, V., Fuchs, F., and Tassis, K.

Abstract

In the framework of studies of the CMB polarization and its Galactic foregrounds, the angular power spectra of thermal dust polarization maps have revealed an intriguing E/B asymmetry and a positive TE correlation. In interpretation studies of these observations, magnetized ISM dust clouds have been treated as filamentary structures only; however, sheet-like shapes are also supported by observational and theoretical evidence. In this work, we study the influence of cloud shape and its connection to the local magnetic field on angular power spectra of thermal dust polarization maps. We simulate realistic filament-like and sheet-like interstellar clouds, and generate synthetic maps of their thermal dust polarized emission using the software $Asterion$. We compute their polarization power spectra in multipole range $\ell \in [100,500]$ and quantify the E/B power asymmetry through the $R_{EB}$ ratio, and the correlation coefficient $r^{TE}$ between T and E modes. We quantify the dependence of $R_{EB}$ and $r^{TE}$ values on the offset angle (between longest cloud axis and magnetic field) and inclination angle (between line-of-sight and magnetic field) for both cloud shapes embedded either in a regular or a turbulent magnetic field. We find that both cloud shapes cover the same regions of the ($R_{EB}$, $r^{TE}$) parameter space. The dependence on inclination and offset angles are similar for both shapes although sheet-like structures generally show larger scatter. In addition to the known dependence on the offset angle, we find a strong dependence of $R_{EB}$ and $r^{TE}$ on the inclination angle. The fact that filament-like and sheet-like structures may lead to polarization power spectra with similar ($R_{EB}$, $r^{TE}$) values complicates their interpretation. In future analyses, this degeneracy should be accounted for as well as the connection to the magnetic field geometry., Comment: 16 pages, 24 figures. Accepted for publication by A&A

Published
2022
Full Text
View/download PDF

5. Electronic structure of In₂O₃ from resonant x-ray emission spectroscopy

Author

Piper, L. F. J., DeMasi, Alexander, Cho, S. W., Smith, Kevin E., Fuchs, F., Bechstedt, Friedhelm, Körber, C., Klein, Andreas, Payne, D. J., Egdell, Russell G., Piper, L. F. J., DeMasi, Alexander, Cho, S. W., Smith, Kevin E., Fuchs, F., Bechstedt, Friedhelm, Körber, C., Klein, Andreas, Payne, D. J., and Egdell, Russell G.

Abstract

The valence and conduction band structures of In₂O₃ have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In₂O₃.

Published
2021

6. Electronic structure of In₂O₃ from resonant x-ray emission spectroscopy

Author

Piper, L. F. J., DeMasi, Alexander, Cho, S. W., Smith, Kevin E., Fuchs, F., Bechstedt, Friedhelm, Körber, C., Klein, Andreas, Payne, D. J., Egdell, Russell G., Piper, L. F. J., DeMasi, Alexander, Cho, S. W., Smith, Kevin E., Fuchs, F., Bechstedt, Friedhelm, Körber, C., Klein, Andreas, Payne, D. J., and Egdell, Russell G.

Abstract

The valence and conduction band structures of In₂O₃ have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In₂O₃.

Published
2021

7. Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence

Author

(0000-0002-2708-2718) Echresh, A., (0000-0003-3318-9877) Arora, H., Fuchs, F., Li, Z., (0000-0002-5200-6928) Hübner, R., (0000-0002-4088-6032) Prucnal, S., Schuster, J., (0000-0003-4756-5239) Zahn, P., Helm, M., (0000-0002-4885-799X) Zhou, S., (0000-0001-6368-8728) Erbe, A., (0000-0002-8066-6392) Rebohle, L., (0000-0002-3146-8031) Georgiev, Y., (0000-0002-2708-2718) Echresh, A., (0000-0003-3318-9877) Arora, H., Fuchs, F., Li, Z., (0000-0002-5200-6928) Hübner, R., (0000-0002-4088-6032) Prucnal, S., Schuster, J., (0000-0003-4756-5239) Zahn, P., Helm, M., (0000-0002-4885-799X) Zhou, S., (0000-0001-6368-8728) Erbe, A., (0000-0002-8066-6392) Rebohle, L., and (0000-0002-3146-8031) Georgiev, Y.

Abstract

The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 cm^2/(Vs) and 4×10^19 cm^-3, respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape.

Published
2021

8. Data: Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence

Author

(0000-0002-2708-2718) Echresh, A., (0000-0003-3318-9877) Arora, H., Fuchs, F., Li, Z., (0000-0002-5200-6928) Hübner, R., (0000-0002-4088-6032) Prucnal, S., Schuster, J., (0000-0003-4756-5239) Zahn, P., Helm, M., (0000-0002-4885-799X) Zhou, S., (0000-0001-6368-8728) Erbe, A., (0000-0002-8066-6392) Rebohle, L., (0000-0002-3146-8031) Georgiev, Y., (0000-0002-2708-2718) Echresh, A., (0000-0003-3318-9877) Arora, H., Fuchs, F., Li, Z., (0000-0002-5200-6928) Hübner, R., (0000-0002-4088-6032) Prucnal, S., Schuster, J., (0000-0003-4756-5239) Zahn, P., Helm, M., (0000-0002-4885-799X) Zhou, S., (0000-0001-6368-8728) Erbe, A., (0000-0002-8066-6392) Rebohle, L., and (0000-0002-3146-8031) Georgiev, Y.

Abstract

The uploaded data are related to electrical measurements including two- and four-probe, Hall effect, and temperature-dependent measurements. The simulation data is included as well.

Published
2021

9. Electronic structure of In₂O₃ from resonant x-ray emission spectroscopy

Author

Piper, L. F. J., DeMasi, Alexander, Cho, S. W., Smith, Kevin E., Fuchs, F., Bechstedt, Friedhelm, Körber, C., Klein, Andreas, Payne, D. J., Egdell, Russell G., Piper, L. F. J., DeMasi, Alexander, Cho, S. W., Smith, Kevin E., Fuchs, F., Bechstedt, Friedhelm, Körber, C., Klein, Andreas, Payne, D. J., and Egdell, Russell G.

Abstract

The valence and conduction band structures of In₂O₃ have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In₂O₃.

Published
2021

10. Electronic structure of In₂O₃ from resonant x-ray emission spectroscopy

Author

Piper, L. F. J., DeMasi, Alexander, Cho, S. W., Smith, Kevin E., Fuchs, F., Bechstedt, Friedhelm, Körber, C., Klein, Andreas, Payne, D. J., Egdell, Russell G., Piper, L. F. J., DeMasi, Alexander, Cho, S. W., Smith, Kevin E., Fuchs, F., Bechstedt, Friedhelm, Körber, C., Klein, Andreas, Payne, D. J., and Egdell, Russell G.

Abstract

The valence and conduction band structures of In₂O₃ have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In₂O₃.

Published
2021

11. Electronic structure of In₂O₃ from resonant x-ray emission spectroscopy

Author

Piper, L. F. J., DeMasi, Alexander, Cho, S. W., Smith, Kevin E., Fuchs, F., Bechstedt, Friedhelm, Körber, C., Klein, Andreas, Payne, D. J., Egdell, Russell G., Piper, L. F. J., DeMasi, Alexander, Cho, S. W., Smith, Kevin E., Fuchs, F., Bechstedt, Friedhelm, Körber, C., Klein, Andreas, Payne, D. J., and Egdell, Russell G.

Abstract

The valence and conduction band structures of In₂O₃ have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In₂O₃.

Published
2021

12. Coda-Q in the 2.5-20 s period band from seismic noise : application to the greater Alpine area

Author

Soergel, D., Pedersen, H. A., Stehly, L., Margerin, L., Paul, A., Hetenyi, G., Abreu, R., Allegretti, I., Apoloner, M. T., Aubert, C., De Berc, M. B., Bokelmann, G., Brunel, D., Capello, M., Carman, M., Cavaliere, A., Cheze, J., Chiarabba, C., Clinton, J., Cougoulat, G., Crawford, W., Cristiano, L., Czifra, T., D'Alema, E., Danesi, S., Daniel, R., Dasovic, I., Deschamps, A., Dessa, J. X., Doubre, C., Egdorf, S., Fiket, T., Fischer, K., Friederich, W., Fuchs, F., Funke, S., Giardini, D., Govoni, A., Graczer, Z., Groschl, G., Heimers, S., Heit, B., Herak, D., Herak, M., Huber, J., Jaric, D., Jedlicka, P., Jia, Y., Jund, H., Kissling, E., Klingen, S., Klotz, B., Kolinsky, P., Korn, M., Kotek, J., Kuhne, L., Kuk, K., Loos, J., Malengros, D., Margheriti, L., Maron, C., Martin, X., Massa, M., Mazzarini, F., Meier, T., Metral, L., Molinari, I., Moretti, M., Munzarova, H., Nardi, A., Pahor, J., Pequegnat, C., Pesaresi, D., Piccinini, D., Piromallo, C., Plenefisch, T., Plomerova, J., Pondrelli, S., Prevolnik, S., Racine, R., Régnier, Marc, Reiss, M., Ritter, J., Rumpker, G., Salimbeni, S., Schulte-Kortnack, D., Scherer, W., Schippkus, S., Sipka, V., Spallarossa, D., Spieker, K., Stipcevic, J., Strollo, A., Sule, B., Szanyi, G., Szucs, E., Thomas, C., Tilmann, F., Ueding, S., Vallocchia, M., Vecsey, L., Voigt, R., Wassermann, J., Weber, Z., Weidle, C., Wesztergom, V., Weyland, G., Wiemer, S., Wolyniec, D., Zieke, T., Zivvic, M., AlpArray Working Group, Soergel, D., Pedersen, H. A., Stehly, L., Margerin, L., Paul, A., Hetenyi, G., Abreu, R., Allegretti, I., Apoloner, M. T., Aubert, C., De Berc, M. B., Bokelmann, G., Brunel, D., Capello, M., Carman, M., Cavaliere, A., Cheze, J., Chiarabba, C., Clinton, J., Cougoulat, G., Crawford, W., Cristiano, L., Czifra, T., D'Alema, E., Danesi, S., Daniel, R., Dasovic, I., Deschamps, A., Dessa, J. X., Doubre, C., Egdorf, S., Fiket, T., Fischer, K., Friederich, W., Fuchs, F., Funke, S., Giardini, D., Govoni, A., Graczer, Z., Groschl, G., Heimers, S., Heit, B., Herak, D., Herak, M., Huber, J., Jaric, D., Jedlicka, P., Jia, Y., Jund, H., Kissling, E., Klingen, S., Klotz, B., Kolinsky, P., Korn, M., Kotek, J., Kuhne, L., Kuk, K., Loos, J., Malengros, D., Margheriti, L., Maron, C., Martin, X., Massa, M., Mazzarini, F., Meier, T., Metral, L., Molinari, I., Moretti, M., Munzarova, H., Nardi, A., Pahor, J., Pequegnat, C., Pesaresi, D., Piccinini, D., Piromallo, C., Plenefisch, T., Plomerova, J., Pondrelli, S., Prevolnik, S., Racine, R., Régnier, Marc, Reiss, M., Ritter, J., Rumpker, G., Salimbeni, S., Schulte-Kortnack, D., Scherer, W., Schippkus, S., Sipka, V., Spallarossa, D., Spieker, K., Stipcevic, J., Strollo, A., Sule, B., Szanyi, G., Szucs, E., Thomas, C., Tilmann, F., Ueding, S., Vallocchia, M., Vecsey, L., Voigt, R., Wassermann, J., Weber, Z., Weidle, C., Wesztergom, V., Weyland, G., Wiemer, S., Wolyniec, D., Zieke, T., Zivvic, M., and AlpArray Working Group

Abstract

Coda-Q is used to estimate the attenuation and scattering properties of the Earth. So far focus has been on earthquake data at frequencies above 1 Hz, as the high noise level in the first and second microseismic peak, and possibly lower scattering coefficient, hinder stable measurements at lower frequencies. In this work, we measure and map coda-Q in the period bands 2.5-5 s, 5-10 s and 10-20 s in the greater Alpine region using noise cross-correlations between station pairs, based on data from permanent seismic stations and from the temporary AlpArray experiment. The observed coda-Q for short interstation distances is independent of azimuth so there is no indication of influence of the directivity of the incoming noise field on our measurements. In the 2.5-5 s and 5-10 s period bands, our measurements are self-consistent, and we observe stable geographic patterns of low and high coda-Q in the period bands 2.5-5 s and 5-10 s. In the period band 10-20 s, the dispersion of our measurements increases and geographic patterns become speculative. The coda-Q maps show that major features are observed with high resolution, with a very good geographical resolution of for example low coda-Q in the Po Plain. There is a sharp contrast between the Po Plain and the Alps and Apennines where coda-Q is high, with the exception a small area in the Swiss Alps which may be contaminated by the low coda-Q of the Po Plain. The coda of the correlations is too short to make independent measurements at different times within the coda, so we cannot distinguish between intrinsic and scattering Q. Measurements on more severely selected data sets and longer time-series result in identical geographical patterns but lower numerical values. Therefore, high coda-Q values may be overestimated, but the geographic distribution between high and low coda-Q areas is respected. Our results demonstrate that noise correlations are a promising tool for extending coda-Q measurements to frequencies lower than t

Published
2020

13. SERIO - Side Effect Registry Immuno-Oncology Side Effect Registry for rare, severe and complex Side Effects of Immunotherapy

Author

Kramer, R., Mentzer, D., Erdmann, M., Knauss, S., Broeckelmann, P. J., Hassel, J. C., Ugurel, S., Pavel, M., Nickel, F. T., Landendinger, M., Fuchs, F., Meidenbauer, N., Jefremow, A., Manger, B., Gutzmer, R., Loquai, C., Kaehler, K., Zimmer, L., Berking, C., Keller-Stanislawski, B., Heinzerling, L., Kramer, R., Mentzer, D., Erdmann, M., Knauss, S., Broeckelmann, P. J., Hassel, J. C., Ugurel, S., Pavel, M., Nickel, F. T., Landendinger, M., Fuchs, F., Meidenbauer, N., Jefremow, A., Manger, B., Gutzmer, R., Loquai, C., Kaehler, K., Zimmer, L., Berking, C., Keller-Stanislawski, B., and Heinzerling, L.

Published
2020

14. SERIO - Side Effect Registry Immuno-Oncology Side Effect Registry for rare, severe and complex Side Effects of Immunotherapy

Author

Kramer, R., Mentzer, D., Erdmann, M., Knauss, S., Broeckelmann, P. J., Hassel, J. C., Ugurel, S., Pavel, M., Nickel, F. T., Landendinger, M., Fuchs, F., Meidenbauer, N., Jefremow, A., Manger, B., Gutzmer, R., Loquai, C., Kaehler, K., Zimmer, L., Berking, C., Keller-Stanislawski, B., Heinzerling, L., Kramer, R., Mentzer, D., Erdmann, M., Knauss, S., Broeckelmann, P. J., Hassel, J. C., Ugurel, S., Pavel, M., Nickel, F. T., Landendinger, M., Fuchs, F., Meidenbauer, N., Jefremow, A., Manger, B., Gutzmer, R., Loquai, C., Kaehler, K., Zimmer, L., Berking, C., Keller-Stanislawski, B., and Heinzerling, L.

Published
2020

15. Statistical studies of random silicon-germanium alloys using electronic structure calculations

Author

Roscher, W., Fuchs, F., Wagner, C., Schuster, J., Gemming, S., Roscher, W., Fuchs, F., Wagner, C., Schuster, J., and Gemming, S.

Abstract

Random alloys are relevant for many applications. One example is silicon-germanium which is used for high frequency devices like heterojunction-bipolar transistors. We therefore investigate the electronic structure of Si1−xGex alloys in the entire composition range 0≤ x≤ 1. For our study we use density functional theory in combination with bulk models of the alloys. To describe the band gap precisely we use the pseudopotential projector shift method as implemented in QuantumATK 18.06. We perform a random generation of Si1−xGex structures to get statistical distributions of the electronic properties. After optimizing the structure we evaluate the band structure by averaging equivalent directions in the Brillouin zone. The mean of the band gap is in good agreement with experimental reference data. We also demonstrate wide variations of the band gap, which are in the range of about 10 %. Further properties, such as the lattice constant and the formation energy are studied as well. Finally, we investigated also the impact of additional carbon dopants in the silicon-germanium alloy.

Published
2019

16. Understanding the electron transport through NiSi2-Si interfaces

Author

Fuchs, F., Gemming, S., Schuster, J., Fuchs, F., Gemming, S., and Schuster, J.

Abstract

Metal-semiconductor interfaces are of huge importance for applications and can be found in various field-effect transistors. We study the interface between NiSi2 and silicon on the basis of density functional theory and the NEGF formalism. Different crystal orientations and strain states are investigated systematically. We focus on the tunneling phenomena of carriers through the Schottky contact at the interface, which are crucial for the on-current in transistors. The on-current is found to be strongly dependent on strain and orientation. It will be shown that the height of the Schottky barrier determines the tunneling current. However, not all changes in the current can be traced back to the barrier height. The modification of the electronic structure matter as well, which can be modeled based on the effective mass of the tunneling carriers. We have also extracted work functions of the isolated materials which we relate to the extracted Schottky barrier heights. It will be shown that the Schottky-Mott model fails for this material system. Better approaches will be discussed in our contribution.

Published
2019

17. Carbon nanotubes for mechanical sensor applications

Author

(0000-0001-5829-6412) Wagner, C., (0000-0003-1638-8508) Meszmer, P., (0000-0003-2955-5336) Blaudeck, T., (0000-0001-6837-4592) Böttger, S., (0000-0003-2886-9835) Fuchs, F., Hermann, S., (0000-0003-4484-0354) Schuster, J., Wunderle, B., Schulz, S. E., (0000-0001-5829-6412) Wagner, C., (0000-0003-1638-8508) Meszmer, P., (0000-0003-2955-5336) Blaudeck, T., (0000-0001-6837-4592) Böttger, S., (0000-0003-2886-9835) Fuchs, F., Hermann, S., (0000-0003-4484-0354) Schuster, J., Wunderle, B., and Schulz, S. E.

Abstract

This article features the evolution of carbon nanotubes as functional material in nano and microelectromechanical systems. Introducing materials morphologies for the CNTs in a homologue series (single CNTs - bundles, fibers, yarns - networks and thin films), different concepts for mechanical sensors based on the intrinsic and extrinsic properties of the CNT material are introduced (piezoresistive effect, strain-induced band bending, charge tunneling). In a rigorous theoretical treatment, the limits of the achievable sensor performance (i.e., gauge factor) are derived and discussed in the context of applications. A careful literature survey shows that highest sensitivity is reached for devices exploiting the intrinsic transport properties of single CNTs. For reliability tests of such sensor systems made from nanomaterials and classical MEMS, a specimen-centered approach is introduced to give viable insights into the structure-property relationships and failure modes.

Published
2019

18. Towards reconfigurable electronics: silicidation of top down fabricated Silicon nanowires

Author

(0000-0003-4627-9433) Khan, M. B., Deb, D., Kerbusch, J., Fuchs, F., Löffler, M., Banerjee, S., Mühle, U., Weber, W. M., (0000-0003-0455-1945) Gemming, S., Schuster, J., (0000-0001-6368-8728) Erbe, A., (0000-0002-3146-8031) Georgiev, Y., (0000-0003-4627-9433) Khan, M. B., Deb, D., Kerbusch, J., Fuchs, F., Löffler, M., Banerjee, S., Mühle, U., Weber, W. M., (0000-0003-0455-1945) Gemming, S., Schuster, J., (0000-0001-6368-8728) Erbe, A., and (0000-0002-3146-8031) Georgiev, Y.

Abstract

We present results of our investigations on nickel (Ni) silicidation of top-down fabricated silicon nanowires (SiNWs). Control over the silicidation process is important for the applications of SiNWs in reconfigurable field effect transistors (RFETs). Silicidation is performed using a rapid thermal annealing (RTA) process on the SiNWs fabricated by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The effect of variations in crystallographic orientations of SiNWs and different NW designs on the silicidation process is studied. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) are done to study Ni diffusion, silicide phases and silicide-silicon interface. Control over the silicide phase is achieved together with atomically sharp interfaces between the silicide and silicon. We find that {111} interfaces are predominantly formed, which are energetically most favorable according to density functional theory calculations. However, control over the silicide length remains a challenge.

Published
2019

19. Electron transport through NiSi2-Si contacts and their role in reconfigurable field-effect transistors

Author

Fuchs, F., Gemming, S., Schuster, J., Fuchs, F., Gemming, S., and Schuster, J.

Abstract

A model is presented which describes reconfigurable field-effect transistors (RFETs) with metal contacts, whose switching is controlled by manipulating the Schottky barriers at the contacts. The proposed modeling approach is able to bridge the gap between quantum effects on the atomic scale and the transistor switching. We apply the model to transistors with a silicon channel and NiSi2 contacts. All relevant crystal orientations are compared, focusing on the differences between electron and hole current, which can be as large as four orders of magnitude. Best symmetry is found for the < 110 > orientation, which makes this orientation most advantageous for RFETs. The observed differences are analyzed in terms of the Schottky barrier height at the interface. Our study indicates that the precise orientation of the interface relative to a given transport direction, perpendicular or tilted, is an important technology parameter, which has been underestimated during the previous development of RFETs. Most of the conclusions regarding the studied metal-semiconductor interface are also valid for other device architectures.

Published
2019

20. Radially resolved electronic structure and charge carrier transport in silicon nanowires

Author

Fuchs, F., Gemming, S., Schuster, J., Fuchs, F., Gemming, S., and Schuster, J.

Abstract

The electronic structure of silicon nanowires is studied using density functional theory. A radially resolved density of states is discussed for different nanowire diameters and crystal orientations, which allows new insight into the transport properties. Strong differences between the surface and the center of the nanowire are found, indicating that the carrier transport will mainly take place in the nanowire center. For increasing diameter the density of states in the center approaches the bulk value. We find that bulk properties such as the indirect nature of the band gap become already significant at a nanowire diameter of approximately 5 nm and beyond. Finally, the spatial characteristic of the current is visualized in terms of transmission pathways. The electron transport is found to be more localized in the nanowire center compared to the hole transport. It also depends on the crystal orientation of the wire.

Published
2019

21. Statistical studies of random silicon-germanium alloys using electronic structure calculations

Author

Roscher, W., Fuchs, F., Wagner, C., Schuster, J., Gemming, S., Roscher, W., Fuchs, F., Wagner, C., Schuster, J., and Gemming, S.

Abstract

Random alloys are relevant for many applications. One example is silicon-germanium which is used for high frequency devices like heterojunction-bipolar transistors. We therefore investigate the electronic structure of Si1−xGex alloys in the entire composition range 0≤ x≤ 1. For our study we use density functional theory in combination with bulk models of the alloys. To describe the band gap precisely we use the pseudopotential projector shift method as implemented in QuantumATK 18.06. We perform a random generation of Si1−xGex structures to get statistical distributions of the electronic properties. After optimizing the structure we evaluate the band structure by averaging equivalent directions in the Brillouin zone. The mean of the band gap is in good agreement with experimental reference data. We also demonstrate wide variations of the band gap, which are in the range of about 10 %. Further properties, such as the lattice constant and the formation energy are studied as well. Finally, we investigated also the impact of additional carbon dopants in the silicon-germanium alloy.

Published
2019

22. Understanding the electron transport through NiSi2-Si interfaces

Author

Fuchs, F., Gemming, S., Schuster, J., Fuchs, F., Gemming, S., and Schuster, J.

Abstract

Metal-semiconductor interfaces are of huge importance for applications and can be found in various field-effect transistors. We study the interface between NiSi2 and silicon on the basis of density functional theory and the NEGF formalism. Different crystal orientations and strain states are investigated systematically. We focus on the tunneling phenomena of carriers through the Schottky contact at the interface, which are crucial for the on-current in transistors. The on-current is found to be strongly dependent on strain and orientation. It will be shown that the height of the Schottky barrier determines the tunneling current. However, not all changes in the current can be traced back to the barrier height. The modification of the electronic structure matter as well, which can be modeled based on the effective mass of the tunneling carriers. We have also extracted work functions of the isolated materials which we relate to the extracted Schottky barrier heights. It will be shown that the Schottky-Mott model fails for this material system. Better approaches will be discussed in our contribution.

Published
2019

23. Understanding the electron transport through NiSi2-Si interfaces

Author

Fuchs, F., Gemming, S., Schuster, J., Fuchs, F., Gemming, S., and Schuster, J.

Abstract

Metal-semiconductor interfaces are of huge importance for applications and can be found in various field-effect transistors. We study the interface between NiSi2 and silicon on the basis of density functional theory and the NEGF formalism. Different crystal orientations and strain states are investigated systematically. We focus on the tunneling phenomena of carriers through the Schottky contact at the interface, which are crucial for the on-current in transistors. The on-current is found to be strongly dependent on strain and orientation. It will be shown that the height of the Schottky barrier determines the tunneling current. However, not all changes in the current can be traced back to the barrier height. The modification of the electronic structure matter as well, which can be modeled based on the effective mass of the tunneling carriers. We have also extracted work functions of the isolated materials which we relate to the extracted Schottky barrier heights. It will be shown that the Schottky-Mott model fails for this material system. Better approaches will be discussed in our contribution.

Published
2019

24. Understanding the electron transport through NiSi2-Si interfaces

Author

Fuchs, F., Gemming, S., Schuster, J., Fuchs, F., Gemming, S., and Schuster, J.

Abstract

Metal-semiconductor interfaces are of huge importance for applications and can be found in various field-effect transistors. We study the interface between NiSi2 and silicon on the basis of density functional theory and the NEGF formalism. Different crystal orientations and strain states are investigated systematically. We focus on the tunneling phenomena of carriers through the Schottky contact at the interface, which are crucial for the on-current in transistors. The on-current is found to be strongly dependent on strain and orientation. It will be shown that the height of the Schottky barrier determines the tunneling current. However, not all changes in the current can be traced back to the barrier height. The modification of the electronic structure matter as well, which can be modeled based on the effective mass of the tunneling carriers. We have also extracted work functions of the isolated materials which we relate to the extracted Schottky barrier heights. It will be shown that the Schottky-Mott model fails for this material system. Better approaches will be discussed in our contribution.

Published
2019

27. Feasible device architectures for ultra-scaled CNTFETs

Author

Pacheco-Sanchez, A., Fuchs, F., Mothes, S., Zienert, A., Schuster, J., Gemming, S., Claus, M., Pacheco-Sanchez, A., Fuchs, F., Mothes, S., Zienert, A., Schuster, J., Gemming, S., and Claus, M.

Abstract

Feasible device architectures for ultra-scaled CNTFETs are studied down to 5.9 nm using a multiscale simulation approach covering electronic quantum transport simulations and TCAD numerical device simulations. Schottky-like and ohmic-like contacts are considered. The simplified approach employed in the numerical device simulator is critically evaluated and verified by means of comparing the results with electronic quantum simulation results of an identical device. Different performance indicators such as the switching speed, switching energy, the subthreshold slope, Ion/Ioff-ratio, among others, are extracted for different device architectures. These values guide the evaluation of the technology for different application scenarios. For high-performance logic applications, the buried gate CNTFET is claimed to be the most suitable structure.

Published
2018

28. Feasible device architectures for ultra-scaled CNTFETs

Author

Pacheco-Sanchez, A., Fuchs, F., Mothes, S., Zienert, A., Schuster, J., Gemming, S., Claus, M., Pacheco-Sanchez, A., Fuchs, F., Mothes, S., Zienert, A., Schuster, J., Gemming, S., and Claus, M.

Abstract

Feasible device architectures for ultra-scaled CNTFETs are studied down to 5.9 nm using a multiscale simulation approach covering electronic quantum transport simulations and TCAD numerical device simulations. Schottky-like and ohmic-like contacts are considered. The simplified approach employed in the numerical device simulator is critically evaluated and verified by means of comparing the results with electronic quantum simulation results of an identical device. Different performance indicators such as the switching speed, switching energy, the subthreshold slope, Ion/Ioff-ratio, among others, are extracted for different device architectures. These values guide the evaluation of the technology for different application scenarios. For high-performance logic applications, the buried gate CNTFET is claimed to be the most suitable structure.

Published
2018

29. Simulation of Nanodevices

Author

Wagner, C., (0000-0002-2876-7217) Teichert, F., Fuchs, F., (0000-0003-4484-0354) Schuster, J., (0000-0002-9827-8689) Schreiber, M., Gessner, T., Wagner, C., (0000-0002-2876-7217) Teichert, F., Fuchs, F., (0000-0003-4484-0354) Schuster, J., (0000-0002-9827-8689) Schreiber, M., and Gessner, T.

Abstract

Presentation of TP1 / DFG research unit 1713 “Sensoric micro- and nano systems

Published
2018

30. Worldwide trends in blood pressure from 1975 to 2015:a pooled analysis of 1479 population-based measurement studies with 19.1 million participants

Author

Zhou, B. (Bin), Bentham, J. (James), Di Cesare, M. (Mariachiara), Bixby, H. (Honor), Danaei, G. (Goodarz), Cowan, M. J. (Melanie J.), Paciorek, C. J. (Christopher J.), Singh, G. (Gitanjali), Hajifathalian, K. (Kaveh), Bennett, J. E. (James E.), Taddei, C. (Cristina), Bilano, V. (Ver), Carrillo-Larco, R. M. (Rodrigo M.), Djalalinia, S. (Shirin), Khatibzadeh, S. (Shahab), Lugero, C. (Charles), Peykari, N. (Niloofar), Zhang, W. Z. (Wan Zhu), Lu, Y. (Yuan), Stevens, G. A. (Gretchen A.), Riley, L. M. (Leanne M.), Bovet, P. (Pascal), Elliott, P. (Paul), Gu, D. (Dongfeng), Ikeda, N. (Nayu), Jackson, R. T. (Rod T.), Joffres, M. (Michel), Kengne, A. P. (Andre Pascal), Laatikainen, T. (Tiina), Lam, T. H. (Tai Hing), Laxmaiah, A. (Avula), Liu, J. (Jing), Miranda, J. J. (J. Jaime), Mondo, C. K. (Charles K.), Neuhauser, H. K. (Hannelore K.), Sundstrom, J. (Johan), Smeeth, L. (Liam), Soric, M. (Maroje), Woodward, M. (Mark), Ezzati, M. (Majid), Abarca-Gomez, L. (Leandra), Abdeen, Z. A. (Ziad A.), Rahim, H. A. (Hanan Abdul), Abu-Rmeileh, N. M. (Niveen M.), Acosta-Cazares, B. (Benjamin), Adams, R. (Robert), Aekplakorn, W. (Wichai), Afsana, K. (Kaosar), Aguilar-Salinas, C. A. (Carlos A.), Agyemang, C. (Charles), Ahmadvand, A. (Alireza), Ahrens, W. (Wolfgang), Al Raddadi, R. (Rajaa), Al Woyatan, R. (Rihab), Ali, M. M. (Mohamed M.), Alkerwi, A. (Ala'a), Aly, E. (Eman), Amouyel, P. (Philippe), Amuzu, A. (Antoinette), Andersen, L. B. (Lars Bo), Anderssen, S. A. (Sigmund A.), Angquist, L. (Lars), Anjana, R. M. (Ranjit Mohan), Ansong, D. (Daniel), Aounallah-Skhiri, H. (Hajer), Araujo, J. (Joana), Ariansen, I. (Inger), Aris, T. (Tahir), Arlappa, N. (Nimmathota), Aryal, K. (Krishna), Arveiler, D. (Dominique), Assah, F. K. (Felix K.), Assuncao, M. C. (Maria Cecilia F.), Avdicova, M. (Maria), Azevedo, A. (Ana), Azizi, F. (Fereidoun), Babu, B. V. (Bontha V.), Bahijri, S. (Suhad), Balakrishna, N. (Nagalla), Bandosz, P. (Piotr), Banegas, J. R. (Jose R.), Barbagallo, C. M. (Carlo M.), Barcelo, A. (Alberto), Barkat, A. (Amina), Barros, A. J. (Aluisio J. D.), Barros, M. V. (Mauro V.), Bata, I. (Iqbal), Batieha, A. M. (Anwar M.), Baur, L. A. (Louise A.), Beaglehole, R. (Robert), Ben Romdhane, H. (Habiba), Benet, M. (Mikhail), Benson, L. S. (Lowell S.), Bernabe-Ortiz, A. (Antonio), Bernotiene, G. (Gailute), Bettiol, H. (Heloisa), Bhagyalaxmi, A. (Aroor), Bharadwaj, S. (Sumit), Bhargava, S. K. (Santosh K.), Bi, Y. (Yufang), Bikbov, M. (Mukharram), Bjerregaard, P. (Peter), Bjertness, E. (Espen), Bjokelund, C. (Cecilia), Blokstra, A. (Anneke), Bo, S. (Simona), Bobak, M. (Martin), Boeing, H. (Heiner), Boggia, J. G. (Jose G.), Boissonnet, C. P. (Carlos P.), Bongard, V. (Vanina), Braeckman, L. (Lutgart), Brajkovich, I. (Imperia), Branca, F. (Francesco), Breckenkamp, J. (Juergen), Brenner, H. (Hermann), Brewster, L. M. (Lizzy M.), Bruno, G. (Graziella), Bueno-de-Mesquita, H. B. (H. B. (as)), Bugge, A. (Anna), Burns, C. (Con), Bursztyn, M. (Michael), de Leon, A. C. (Antonio Cabrera), Cameron, C. (Christine), Can, G. (Gunay), Candido, A. P. (Ana Paula C.), Capuano, V. (Vincenzo), Cardoso, V. C. (Viviane C.), Carlsson, A. C. (Axel C.), Carvalho, M. J. (Maria J.), Casanueva, F. F. (Felipe F.), Casas, J.-P. (Juan-Pablo), Caserta, C. A. (Carmelo A.), Chamukuttan, S. (Snehalatha), Chan, A. W. (Angelique W.), Chan, Q. (Queenie), Chaturvedi, H. K. (Himanshu K.), Chaturvedi, N. (Nishi), Chen, C.-J. (Chien-Jen), Chen, F. (Fangfang), Chen, H. (Huashuai), Chen, S. (Shuohua), Chen, Z. (Zhengming), Cheng, C.-Y. (Ching-Yu), Dekkaki, I. C. (Imane Cherkaoui), Chetrit, A. (Angela), Chiolero, A. (Arnaud), Chiou, S.-T. (Shu-Ti), Chirita-Emandi, A. (Adela), Cho, B. (Belong), Cho, Y. (Yumi), Chudek, J. (Jerzy), Cifkova, R. (Renata), Claessens, F. (Frank), Clays, E. (Els), Concin, H. (Hans), Cooper, C. (Cyrus), Cooper, R. (Rachel), Coppinger, T. C. (Tara C.), Costanzo, S. (Simona), Cottel, D. (Dominique), Cowell, C. (Chris), Craig, C. L. (Cora L.), Crujeiras, A. B. (Ana B.), Cruz, J. J. (Juan J.), D'Arrigo, G. (Graziella), d'Orsi, E. (Eleonora), Dallongeville, J. (Jean), Damasceno, A. (Albertino), Dankner, R. (Rachel), Dantoft, T. M. (Thomas M.), Dauchet, L. (Luc), De Backer, G. (Guy), de Gaetano, G. (Giovanni), De Henauw, S. (Stefaan), De Smedt, D. (Delphine), Deepa, M. (Mohan), Dehghan, A. (Abbas), Delisle, H. (Helene), Deschamps, V. (Valerie), Dhana, K. (Klodian), Di Castelnuovo, A. F. (Augusto F.), Dias-da-Costa, J. S. (Juvenal Soares), Diaz, A. (Alejandro), Dickerson, T. T. (Ty T.), Do, H. T. (Ha T. P.), Dobson, A. J. (Annette J.), Donfrancesco, C. (Chiara), Donoso, S. P. (Silvana P.), Doering, A. (Angela), Doua, K. (Kouamelan), Drygas, W. (Wojciech), Dulskiene, V. (Virginija), Dzakula, A. (Aleksandar), Dzerve, V. (Vilnis), Dziankowska-Zaborszczyk, E. (Elzbieta), Eggertsen, R. (Robert), Ekelund, U. (Ulf), El Ati, J. (Jalila), Ellert, U. (Ute), Elosua, R. (Roberto), Erasmus, R. T. (Rajiv T.), Erem, C. (Cihangir), Eriksen, L. (Louise), Escobedo-de la Pena, J. (Jorge), Evans, A. (Alun), Faeh, D. (David), Fall, C. H. (Caroline H.), Farzadfar, F. (Farshad), Felix-Redondo, F. J. (Francisco J.), Ferguson, T. S. (Trevor S.), Fernandez-Berges, D. (Daniel), Ferrante, D. (Daniel), Ferrari, M. (Marika), Ferreccio, C. (Catterina), Ferrieres, J. (Jean), Finn, J. D. (Joseph D.), Fischer, K. (Krista), Foeger, B. (Bernhard), Foo, L. H. (Leng Huat), Forslund, A.-S. (Ann-Sofie), Forsner, M. (Maria), Fortmann, S. P. (Stephen P.), Fouad, H. M. (Heba M.), Francis, D. K. (Damian K.), Franco, M. d. (Maria do Carmo), Franco, O. H. (Oscar H.), Frontera, G. (Guillermo), Fuchs, F. D. (Flavio D.), Fuchs, S. C. (Sandra C.), Fujita, Y. (Yuki), Furusawa, T. (Takuro), Gaciong, Z. (Zbigniew), Gareta, D. (Dickman), Garnett, S. P. (Sarah P.), Gaspoz, J.-M. (Jean-Michel), Gasull, M. (Magda), Gates, L. (Louise), Gavrila, D. (Diana), Geleijnse, J. M. (Johanna M.), Ghasemian, A. (Anoosheh), Ghimire, A. (Anup), Giampaoli, S. (Simona), Gianfagna, F. (Francesco), Giovannelli, J. (Jonathan), Goldsmith, R. A. (Rebecca A.), Goncalves, H. (Helen), Gonzalez Gross, M. (Marcela), Gonzalez Rivas, J. P. (Juan P.), Gottrand, F. (Frederic), Graff-Iversen, S. (Sidsel), Grafnetter, D. (Dusan), Grajda, A. (Aneta), Gregor, R. D. (Ronald D.), Grodzicki, T. (Tomasz), Grontved, A. (Anders), Gruden, G. (Grabriella), Grujic, V. (Vera), Guan, O. P. (Ong Peng), Gudnason, V. (Vilmundur), Guerrero, R. (Ramiro), Guessous, I. (Idris), Guimaraes, A. L. (Andre L.), Gulliford, M. C. (Martin C.), Gunnlaugsdottir, J. (Johanna), Gunter, M. (Marc), Gupta, P. C. (Prakash C.), Gureje, O. (Oye), Gurzkowska, B. (Beata), Gutierrez, L. (Laura), Gutzwiller, F. (Felix), Hadaegh, F. (Farzad), Halkjaer, J. (Jytte), Hambleton, I. R. (Ian R.), Hardy, R. (Rebecca), Harikumar, R. (Rachakulla), Hata, J. (Jun), Hayes, A. J. (Alison J.), He, J. (Jiang), Hendriks, M. E. (Marleen Elisabeth), Henriques, A. (Ana), Hernandez Cadena, L. (Leticia), . (), Herrala, S. (Sauli), Heshmat, R. (Ramin), Hihtaniemi, I. T. (Ilpo Tapani), Ho, S. Y. (Sai Yin), Ho, S. C. (Suzanne C.), Hobbs, M. (Michael), Hofman, A. (Albert), Dinc, G. H. (Gonul Horasan), Hormiga, C. M. (Claudia M.), Horta, B. L. (Bernardo L.), Houti, L. (Leila), Howitt, C. (Christina), Htay, T. T. (Thein Thein), Htet, A. S. (Aung Soe), Hu, Y. (Yonghua), Maria Huerta, J. (Jose), Husseini, A. S. (Abdullatif S.), Huybrechts, I. (Inge), Hwalla, N. (Nahla), Iacoviello, L. (Licia), Iannone, A. G. (Anna G.), Ibrahim, M. M. (M. Mohsen), Ikram, M. A. (M. Arfan), Irazola, V. E. (Vilma E.), Islam, M. (Muhammad), Ivkovic, V. (Vanja), Iwasaki, M. (Masanori), Jacobs, J. M. (Jeremy M.), Jafar, T. (Tazeen), Jamrozik, K. (Konrad), Janszky, I. (Imre), Jasienska, G. (Grazyna), Jelakovic, B. (Bojan), Jiang, C. Q. (Chao Qiang), Johansson, M. (Mattias), Jonas, J. B. (Jost B.), Jorgensen, T. (Torben), Joshi, P. (Pradeep), Juolevi, A. (Anne), Jurak, G. (Gregor), Juresa, V. (Vesna), Kaaks, R. (Rudolf), Kafatos, A. (Anthony), Kalter-Leibovici, O. (Ofra), Kamaruddin, N. A. (Nor Azmi), Kasaeian, A. (Amir), Katz, J. (Joanne), Kauhanen, J. (Jussi), Kaur, P. (Prabhdeep), Kavousi, M. (Maryam), Kazakbaeva, G. (Gyulli), Keil, U. (Ulrich), Boker, L. K. (Lital Keinan), Keinanen-Kiukaanniemi, S. (Sirkka), Kelishadi, R. (Roya), Kemper, H. C. (Han C. G.), Kersting, M. (Mathilde), Key, T. (Timothy), Khader, Y. S. (Yousef Saleh), Khalili, D. (Davood), Khang, Y.-H. (Young-Ho), Khaw, K.-T. (Kay-Tee), Kiechl, S. (Stefan), Killewo, J. (Japhet), Kim, J. (Jeongseon), Klumbiene, J. (Jurate), Kolle, E. (Elin), Kolsteren, P. (Patrick), Korrovits, P. (Paul), Koskinen, S. (Seppo), Kouda, K. (Katsuyasu), Koziel, S. (Slawomir), Kristensen, P. L. (Peter Lund), Krokstad, S. (Steinar), Kromhout, D. (Daan), Kruger, H. S. (Herculina S.), Kubinova, R. (Ruzena), Kuciene, R. (Renata), Kuh, D. (Diana), Kujala, U. M. (Urho M.), Kula, K. (Krzysztof), Kulaga, Z. (Zbigniew), Kumar, R. K. (R. Krishna), Kurjata, P. (Pawel), Kusuma, Y. S. (Yadlapalli S.), Kuulasmaa, K. (Kari), Kyobutungi, C. (Catherine), Lachat, C. (Carl), Landrove, O. (Orlando), Lanska, V. (Vera), Lappas, G. (Georg), Larijani, B. (Bagher), Laugsand, L. E. (Lars E.), Le, T. D. (Tuyen D.), Leclercq, C. (Catherine), Lee, J. (Jeannette), Lee, J. (Jeonghee), Lehtimaki, T. (Terho), Lekhraj, R. (Rampal), Leon-Munoz, L. M. (Luz M.), Levitt, N. S. (Naomi S.), Li, Y. (Yanping), Lilly, C. L. (Christa L.), Lim, W.-Y. (Wei-Yen), Fernanda Lima-Costa, M. (M.), Lin, H.-H. (Hsien-Ho), Lin, X. (Xu), Linneberg, A. (Allan), Lissner, L. (Lauren), Litwin, M. (Mieczyslaw), Lorbeer, R. (Roberto), Lotufo, P. A. (Paulo A.), Eugenio Lozano, J. (Jose), Luksiene, D. (Dalia), Lundqvist, A. (Annamari), Lunet, N. (Nuno), Lytsy, P. (Per), Ma, G. (Guansheng), Ma, J. (Jun), Machado-Coelho, G. L. (George L. L.), Machi, S. (Suka), Maggi, S. (Stefania), Magliano, D. J. (Dianna J.), Majer, M. (Marjeta), Makdisse, M. (Marcia), Malekzadeh, R. (Reza), Malhotra, R. (Rahul), Rao, K. M. (Kodavanti Mallikharjuna), Malyutina, S. (Sofia), Manios, Y. (Yannis), Mann, J. I. (Jim I.), Manzato, E. (Enzo), Margozzini, P. (Paula), Marques-Vidal, P. (Pedro), Marrugat, J. (Jaume), Martorell, R. (Reynaldo), Mathiesen, E. B. (Ellisiv B.), Matijasevich, A. (Alicia), Matsha, T. E. (Tandi E.), Mbanya, J. C. (Jean Claude N.), Posso, A. J. (Anselmo J. Mc Donald), McFarlane, S. R. (Shelly R.), McGarvey, S. T. (Stephen T.), McLachlan, S. (Stela), McLean, R. M. (Rachael M.), McNulty, B. A. (Breige A.), Khir, A. S. (Amir Sharifuddin Md), Mediene-Benchekor, S. (Sounnia), Medzioniene, J. (Jurate), Meirhaeghe, A. (Aline), Meisinger, C. (Christa), Menezes, A. M. (Ana Maria B.), Menon, G. R. (Geetha R.), Meshram, I. I. (Indrapal I.), Metspalu, A. (Andres), Mi, J. (Jie), Mikkel, K. (Kairit), Miller, J. C. (Jody C.), Francisco Miquel, J. (Juan), Jaime Miranda, J. (J.), Misigoj-Durakovic, M. (Marjeta), Mohamed, M. K. (Mostafa K.), Mohammad, K. (Kazem), Mohammadifard, N. (Noushin), Mohan, V. (Viswanathan), Yusoff, M. F. (Muhammad Fadhli Mohd), Moller, N. C. (Niels C.), Molnar, D. (Denes), Momenan, A. (Amirabbas), Monyeki, K. D. (Kotsedi Daniel K.), Moreira, L. B. (Leila B.), Morejon, A. (Alain), Moreno, L. A. (Luis A.), Morgan, K. (Karen), Moschonis, G. (George), Mossakowska, M. (Malgorzata), Mostafa, A. (Aya), Mota, J. (Jorge), Motlagh, M. E. (Mohammad Esmaeel), Motta, J. (Jorge), Muiesan, M. L. (Maria L.), Mueller-Nurasyid, M. (Martina), Murphy, N. (Neil), Mursu, J. (Jaakko), Musil, V. (Vera), Nagel, G. (Gabriele), Naidu, B. M. (Balkish M.), Nakamura, H. (Harunobu), Namsna, J. (Jana), Nang, E. E. (Ei Ei K.), Nangia, V. B. (Vinay B.), Narake, S. (Sameer), Maria Navarrete-Munoz, E. (Eva), Ndiaye, N. C. (Ndeye Coumba), Neal, W. A. (William A.), Nenko, I. (Ilona), Nervi, F. (Flavio), Nguyen, N. D. (Nguyen D.), Nieto-Martinez, R. E. (Ramfis E.), Niiranen, T. J. (Teemu J.), Ning, G. (Guang), Ninomiya, T. (Toshiharu), Nishtar, S. (Sania), Noale, M. (Marianna), Noboa, O. A. (Oscar A.), Noorbala, A. A. (Ahmad Ali), Norat, T. (Teresa), Noto, D. (Davide), Al Nsour, M. (Mohannad), O'Reilly, D. (Dermot), Oh, K. (Kyungwon), Olinto, M. T. (Maria Teresa A.), Oliveira, I. O. (Isabel O.), Omar, M. A. (Mohd Azahadi), Onat, A. (Altan), Ordunez, P. (Pedro), Osmond, C. (Clive), Ostojic, S. M. (Sergej M.), Otero, J. A. (Johanna A.), Overvad, K. (Kim), Owusu-Dabo, E. (Ellis), Paccaud, F. M. (Fred Michel), Padez, C. (Cristina), Pahomova, E. (Elena), Pajak, A. (Andrzej), Palli, D. (Domenico), Palmieri, L. (Luigi), Panda-Jonas, S. (Songhomitra), Panza, F. (Francesco), Papandreou, D. (Dimitrios), Parnell, W. R. (Winsome R.), Parsaeian, M. (Mahboubeh), Pecin, I. (Ivan), Pednekar, M. S. (Mangesh S.), Peer, N. (Nasheeta), Peeters, P. H. (Petra H.), Peixoto, S. V. (Sergio Viana), Pelletier, C. (Catherine), Peltonen, M. (Markku), Pereira, A. C. (Alexandre C.), Marina Perez, R. (Rosa), Peters, A. (Annette), Petkeviciene, J. (Janina), Pigeot, I. (Iris), Pikhart, H. (Hynek), Pilav, A. (Aida), Pilotto, L. (Lorenza), Pitakaka, F. (Freda), Plans-Rubio, P. (Pedro), Polakowska, M. (Maria), Polasek, O. (Ozren), Porta, M. (Miquel), Portegies, M. L. (Marileen L. P.), Pourshams, A. (Akram), Pradeepa, R. (Rajendra), Prashant, M. (Mathur), Price, J. F. (Jacqueline F.), Puiu, M. (Maria), Punab, M. (Margus), Qasrawi, R. F. (Radwan F.), Qorbani, M. (Mostafa), Radic, I. (Ivana), Radisauskas, R. (Ricardas), Rahman, M. (Mahfuzar), Raitakari, O. (Olli), Raj, M. (Manu), Rao, S. R. (Sudha Ramachandra), Ramos, E. (Elisabete), Rampal, S. (Sanjay), Rangel Reina, D. A. (Daniel A.), Rasmussen, F. (Finn), Redon, J. (Josep), Reganit, P. F. (Paul Ferdinand M.), Ribeiro, R. (Robespierre), Riboli, E. (Elio), Rigo, F. (Fernando), de Wit, T. F. (Tobias F. Rinke), Ritti-Dias, R. M. (Raphael M.), Robinson, S. M. (Sian M.), Robitaille, C. (Cynthia), Rodriguez-Artalejo, F. (Fernando), Rodriguez-Villamizar, L. A. (Laura A.), Rojas-Martinez, R. (Rosalba), Rosengren, A. (Annika), Rubinstein, A. (Adolfo), Rui, O. (Ornelas), Sandra Ruiz-Betancourt, B. (Blanca), Russo Horimoto, A. R. (Andrea R. V.), Rutkowski, M. (Marcin), Sabanayagam, C. (Charumathi), Sachdev, H. S. (Harshpal S.), Saidi, O. (Olfa), Sakarya, S. (Sibel), Salanave, B. (Benoit), Salazar Martinez, E. (Eduardo), Salmeron, D. (Diego), Salomaa, V. (Veikko), Salonen, J. T. (Jukka T.), Salvetti, M. (Massimo), Sanchez-Abanto, J. (Jose), Sans, S. (Susana), Santos, D. (Diana), Santos, I. S. (Ina S.), dos Santos, R. N. (Renata Nunes), Santos, R. (Rute), Saramies, J. L. (Jouko L.), Sardinha, L. B. (Luis B.), Margolis, G. S. (Giselle Sarganas), Sarrafzadegan, N. (Nizal), Saum, K.-U. (Kai-Uwe), Savva, S. C. (Savvas C.), Scazufca, M. (Marcia), Schargrodsky, H. (Herman), Schneider, I. J. (Ione J.), Schultsz, C. (Constance), Schutte, A. E. (Aletta E.), Sen, A. (Abhijit), Senbanjo, I. O. (Idowu O.), Sepanlou, S. G. (Sadaf G.), Sharma, S. K. (Sanjib K.), Shaw, J. E. (Jonathan E.), Shibuya, K. (Kenji), Shin, D. W. (Dong Wook), Shin, Y. (Youchan), Siantar, R. (Rosalynn), Sibai, A. M. (Abla M.), Santos Silva, D. A. (Diego Augusto), Simon, M. (Mary), Simons, J. (Judith), Simons, L. A. (Leon A.), Sjotrom, M. (Michael), Skovbjerg, S. (Sine), Slowikowska-Hilczer, J. (Jolanta), Slusarczyk, P. (Przemyslaw), Smith, M. C. (Margaret C.), Snijder, M. B. (Marieke B.), So, H.-K. (Hung-Kwan), Sobngwi, E. (Eugene), Soderberg, S. (Stefan), Solfrizzi, V. (Vincenzo), Sonestedt, E. (Emily), Song, Y. (Yi), Sorensen, T. I. (Thorkild I. A.), Jerome, C. S. (Charles Sossa), Soumare, A. (Aicha), Staessen, J. A. (Jan A.), Starc, G. (Gregor), Stathopoulou, M. G. (Maria G.), Stavreski, B. (Bill), Steene-Johannessen, J. (Jostein), Stehle, P. (Peter), Stein, A. D. (Aryeh D.), Stergiou, G. S. (George S.), Stessman, J. (Jochanan), Stieber, J. (Jutta), Stoeckl, D. (Doris), Stocks, T. (Tanja), Stokwiszewski, J. (Jakub), Stronks, K. (Karien), Strufaldi, M. W. (Maria Wany), Sun, C.-A. (Chien-An), Sung, Y.-T. (Yn-Tz), Suriyawongpaisal, P. (Paibul), Sy, R. G. (Rody G.), Tai, E. S. (E. Shyong), Tammesoo, M.-L. (Mari-Liis), Tamosiunas, A. (Abdonas), Tang, L. (Line), Tang, X. (Xun), Tanser, F. (Frank), Tao, Y. (Yong), Tarawneh, M. R. (Mohammed Rasoul), Tarqui-Mamani, C. B. (Carolina B.), Taylor, A. (Anne), Theobald, H. (Holger), Thijs, L. (Lutgarde), Thuesen, B. H. (Betina H.), Tjonneland, A. (Anne), Tolonen, H. K. (Hanna K.), Topbas, M. (Murat), Topor-Madry, R. (Roman), Jose Tormo, M. (Maria), Torrent, M. (Maties), Traissac, P. (Pierre), Trichopoulos, D. (Dimitrios), Trichopoulou, A. (Antonia), Trinh, O. T. (Oanh T. H.), Trivedi, A. (Atul), Tshepo, L. (Lechaba), Tulloch-Reid, M. K. (Marshall K.), Tuomainen, T.-P. (Tomi-Pekka), Turley, M. L. (Maria L.), Tynelius, P. (Per), Tzourio, C. (Christophe), Ueda, P. (Peter), Ugel, E. (Eunice), Ulmer, H. (Hanno), Uusitalo, H. M. (Hannu M. T.), Valdivia, G. (Gonzalo), Valvi, D. (Damaskini), van der Schouw, Y. T. (Yvonne T.), Van Herck, K. (Koen), van Rossem, L. (Lenie), van Valkengoed, I. G. (Irene G. M.), Vanderschueren, D. (Dirk), Vanuzzo, D. (Diego), Vatten, L. (Lars), Vega, T. (Tomas), Velasquez-Melendez, G. (Gustavo), Veronesi, G. (Giovanni), Verschuren, W. M. (W. M. Monique), Verstraeten, R. (Roosmarijn), Victora, C. G. (Cesar G.), Viet, L. (Lucie), Viikari-Juntura, E. (Eira), Vineis, P. (Paolo), Vioque, J. (Jesus), Virtanen, J. K. (Jyrki K.), Visvikis-Siest, S. (Sophie), Viswanathan, B. (Bharathi), Vollenweider, P. (Peter), Vrdoljak, A. (Ana), Vrijheid, M. (Martine), Wade, A. N. (Alisha N.), Wagner, A. (Aline), Walton, J. (Janette), Mohamud, W. N. (Wan Nazaimoon Wan), Wang, M.-D. (Ming-Dong), Wang, Q. (Qian), Wang, Y. X. (Ya Xing), Wannamethee, S. G. (S. Goya), Wareham, N. (Nicholas), Wederkopp, N. (Niels), Weerasekera, D. (Deepa), Whincup, P. H. (Peter H.), Widhalm, K. (Kurt), Widyahening, I. S. (Indah S.), Wiecek, A. (Andrzej), Wijga, A. H. (Alet H.), Wilks, R. J. (Rainford J.), Willeit, P. (Peter), Williams, E. A. (Emmanuel A.), Wilsgaard, T. (Tom), Wojtyniak, B. (Bogdan), Wong, T. Y. (Tien Yin), Wong-McClure, R. A. (Roy A.), Woo, J. (Jean), Wu, A. G. (Aleksander Giwercman), Wu, F. C. (Frederick C.), Wu, S. L. (Shou Ling), Xu, H. (Haiquan), Yan, W. (Weili), Yang, X. (Xiaoguang), Ye, X. (Xingwang), Yiallouros, P. K. (Panayiotis K.), Yoshihara, A. (Akihiro), Younger-Coleman, N. O. (Novie O.), Yusoff, A. F. (Ahmad F.), Zambon, S. (Sabina), Zdrojewski, T. (Tomasz), Zeng, Y. (Yi), Zhao, D. (Dong), Zhao, W. (Wenhua), Zheng, Y. (Yingffeng), Zhu, D. (Dan), Zimmermann, E. (Esther), Zuniga Cisneros, J. (Julio), Zhou, B. (Bin), Bentham, J. (James), Di Cesare, M. (Mariachiara), Bixby, H. (Honor), Danaei, G. (Goodarz), Cowan, M. J. (Melanie J.), Paciorek, C. J. (Christopher J.), Singh, G. (Gitanjali), Hajifathalian, K. (Kaveh), Bennett, J. E. (James E.), Taddei, C. (Cristina), Bilano, V. (Ver), Carrillo-Larco, R. M. (Rodrigo M.), Djalalinia, S. (Shirin), Khatibzadeh, S. (Shahab), Lugero, C. (Charles), Peykari, N. (Niloofar), Zhang, W. Z. (Wan Zhu), Lu, Y. (Yuan), Stevens, G. A. (Gretchen A.), Riley, L. M. (Leanne M.), Bovet, P. (Pascal), Elliott, P. (Paul), Gu, D. (Dongfeng), Ikeda, N. (Nayu), Jackson, R. T. (Rod T.), Joffres, M. (Michel), Kengne, A. P. (Andre Pascal), Laatikainen, T. (Tiina), Lam, T. H. (Tai Hing), Laxmaiah, A. (Avula), Liu, J. (Jing), Miranda, J. J. (J. Jaime), Mondo, C. K. (Charles K.), Neuhauser, H. K. (Hannelore K.), Sundstrom, J. (Johan), Smeeth, L. (Liam), Soric, M. (Maroje), Woodward, M. (Mark), Ezzati, M. (Majid), Abarca-Gomez, L. (Leandra), Abdeen, Z. A. (Ziad A.), Rahim, H. A. (Hanan Abdul), Abu-Rmeileh, N. M. (Niveen M.), Acosta-Cazares, B. (Benjamin), Adams, R. (Robert), Aekplakorn, W. (Wichai), Afsana, K. (Kaosar), Aguilar-Salinas, C. A. (Carlos A.), Agyemang, C. (Charles), Ahmadvand, A. (Alireza), Ahrens, W. (Wolfgang), Al Raddadi, R. (Rajaa), Al Woyatan, R. (Rihab), Ali, M. M. (Mohamed M.), Alkerwi, A. (Ala'a), Aly, E. (Eman), Amouyel, P. (Philippe), Amuzu, A. (Antoinette), Andersen, L. B. (Lars Bo), Anderssen, S. A. (Sigmund A.), Angquist, L. (Lars), Anjana, R. M. (Ranjit Mohan), Ansong, D. (Daniel), Aounallah-Skhiri, H. (Hajer), Araujo, J. (Joana), Ariansen, I. (Inger), Aris, T. (Tahir), Arlappa, N. (Nimmathota), Aryal, K. (Krishna), Arveiler, D. (Dominique), Assah, F. K. (Felix K.), Assuncao, M. C. (Maria Cecilia F.), Avdicova, M. (Maria), Azevedo, A. (Ana), Azizi, F. (Fereidoun), Babu, B. V. (Bontha V.), Bahijri, S. (Suhad), Balakrishna, N. (Nagalla), Bandosz, P. (Piotr), Banegas, J. R. (Jose R.), Barbagallo, C. M. (Carlo M.), Barcelo, A. (Alberto), Barkat, A. (Amina), Barros, A. J. (Aluisio J. D.), Barros, M. V. (Mauro V.), Bata, I. (Iqbal), Batieha, A. M. (Anwar M.), Baur, L. A. (Louise A.), Beaglehole, R. (Robert), Ben Romdhane, H. (Habiba), Benet, M. (Mikhail), Benson, L. S. (Lowell S.), Bernabe-Ortiz, A. (Antonio), Bernotiene, G. (Gailute), Bettiol, H. (Heloisa), Bhagyalaxmi, A. (Aroor), Bharadwaj, S. (Sumit), Bhargava, S. K. (Santosh K.), Bi, Y. (Yufang), Bikbov, M. (Mukharram), Bjerregaard, P. (Peter), Bjertness, E. (Espen), Bjokelund, C. (Cecilia), Blokstra, A. (Anneke), Bo, S. (Simona), Bobak, M. (Martin), Boeing, H. (Heiner), Boggia, J. G. (Jose G.), Boissonnet, C. P. (Carlos P.), Bongard, V. (Vanina), Braeckman, L. (Lutgart), Brajkovich, I. (Imperia), Branca, F. (Francesco), Breckenkamp, J. (Juergen), Brenner, H. (Hermann), Brewster, L. M. (Lizzy M.), Bruno, G. (Graziella), Bueno-de-Mesquita, H. B. (H. B. (as)), Bugge, A. (Anna), Burns, C. (Con), Bursztyn, M. (Michael), de Leon, A. C. (Antonio Cabrera), Cameron, C. (Christine), Can, G. (Gunay), Candido, A. P. (Ana Paula C.), Capuano, V. (Vincenzo), Cardoso, V. C. (Viviane C.), Carlsson, A. C. (Axel C.), Carvalho, M. J. (Maria J.), Casanueva, F. F. (Felipe F.), Casas, J.-P. (Juan-Pablo), Caserta, C. A. (Carmelo A.), Chamukuttan, S. (Snehalatha), Chan, A. W. (Angelique W.), Chan, Q. (Queenie), Chaturvedi, H. K. (Himanshu K.), Chaturvedi, N. (Nishi), Chen, C.-J. (Chien-Jen), Chen, F. (Fangfang), Chen, H. (Huashuai), Chen, S. (Shuohua), Chen, Z. (Zhengming), Cheng, C.-Y. (Ching-Yu), Dekkaki, I. C. (Imane Cherkaoui), Chetrit, A. (Angela), Chiolero, A. (Arnaud), Chiou, S.-T. (Shu-Ti), Chirita-Emandi, A. (Adela), Cho, B. (Belong), Cho, Y. (Yumi), Chudek, J. (Jerzy), Cifkova, R. (Renata), Claessens, F. (Frank), Clays, E. (Els), Concin, H. (Hans), Cooper, C. (Cyrus), Cooper, R. (Rachel), Coppinger, T. C. (Tara C.), Costanzo, S. (Simona), Cottel, D. (Dominique), Cowell, C. (Chris), Craig, C. L. (Cora L.), Crujeiras, A. B. (Ana B.), Cruz, J. J. (Juan J.), D'Arrigo, G. (Graziella), d'Orsi, E. (Eleonora), Dallongeville, J. (Jean), Damasceno, A. (Albertino), Dankner, R. (Rachel), Dantoft, T. M. (Thomas M.), Dauchet, L. (Luc), De Backer, G. (Guy), de Gaetano, G. (Giovanni), De Henauw, S. (Stefaan), De Smedt, D. (Delphine), Deepa, M. (Mohan), Dehghan, A. (Abbas), Delisle, H. (Helene), Deschamps, V. (Valerie), Dhana, K. (Klodian), Di Castelnuovo, A. F. (Augusto F.), Dias-da-Costa, J. S. (Juvenal Soares), Diaz, A. (Alejandro), Dickerson, T. T. (Ty T.), Do, H. T. (Ha T. P.), Dobson, A. J. (Annette J.), Donfrancesco, C. (Chiara), Donoso, S. P. (Silvana P.), Doering, A. (Angela), Doua, K. (Kouamelan), Drygas, W. (Wojciech), Dulskiene, V. (Virginija), Dzakula, A. (Aleksandar), Dzerve, V. (Vilnis), Dziankowska-Zaborszczyk, E. (Elzbieta), Eggertsen, R. (Robert), Ekelund, U. (Ulf), El Ati, J. (Jalila), Ellert, U. (Ute), Elosua, R. (Roberto), Erasmus, R. T. (Rajiv T.), Erem, C. (Cihangir), Eriksen, L. (Louise), Escobedo-de la Pena, J. (Jorge), Evans, A. (Alun), Faeh, D. (David), Fall, C. H. (Caroline H.), Farzadfar, F. (Farshad), Felix-Redondo, F. J. (Francisco J.), Ferguson, T. S. (Trevor S.), Fernandez-Berges, D. (Daniel), Ferrante, D. (Daniel), Ferrari, M. (Marika), Ferreccio, C. (Catterina), Ferrieres, J. (Jean), Finn, J. D. (Joseph D.), Fischer, K. (Krista), Foeger, B. (Bernhard), Foo, L. H. (Leng Huat), Forslund, A.-S. (Ann-Sofie), Forsner, M. (Maria), Fortmann, S. P. (Stephen P.), Fouad, H. M. (Heba M.), Francis, D. K. (Damian K.), Franco, M. d. (Maria do Carmo), Franco, O. H. (Oscar H.), Frontera, G. (Guillermo), Fuchs, F. D. (Flavio D.), Fuchs, S. C. (Sandra C.), Fujita, Y. (Yuki), Furusawa, T. (Takuro), Gaciong, Z. (Zbigniew), Gareta, D. (Dickman), Garnett, S. P. (Sarah P.), Gaspoz, J.-M. (Jean-Michel), Gasull, M. (Magda), Gates, L. (Louise), Gavrila, D. (Diana), Geleijnse, J. M. (Johanna M.), Ghasemian, A. (Anoosheh), Ghimire, A. (Anup), Giampaoli, S. (Simona), Gianfagna, F. (Francesco), Giovannelli, J. (Jonathan), Goldsmith, R. A. (Rebecca A.), Goncalves, H. (Helen), Gonzalez Gross, M. (Marcela), Gonzalez Rivas, J. P. (Juan P.), Gottrand, F. (Frederic), Graff-Iversen, S. (Sidsel), Grafnetter, D. (Dusan), Grajda, A. (Aneta), Gregor, R. D. (Ronald D.), Grodzicki, T. (Tomasz), Grontved, A. (Anders), Gruden, G. (Grabriella), Grujic, V. (Vera), Guan, O. P. (Ong Peng), Gudnason, V. (Vilmundur), Guerrero, R. (Ramiro), Guessous, I. (Idris), Guimaraes, A. L. (Andre L.), Gulliford, M. C. (Martin C.), Gunnlaugsdottir, J. (Johanna), Gunter, M. (Marc), Gupta, P. C. (Prakash C.), Gureje, O. (Oye), Gurzkowska, B. (Beata), Gutierrez, L. (Laura), Gutzwiller, F. (Felix), Hadaegh, F. (Farzad), Halkjaer, J. (Jytte), Hambleton, I. R. (Ian R.), Hardy, R. (Rebecca), Harikumar, R. (Rachakulla), Hata, J. (Jun), Hayes, A. J. (Alison J.), He, J. (Jiang), Hendriks, M. E. (Marleen Elisabeth), Henriques, A. (Ana), Hernandez Cadena, L. (Leticia), . (), Herrala, S. (Sauli), Heshmat, R. (Ramin), Hihtaniemi, I. T. (Ilpo Tapani), Ho, S. Y. (Sai Yin), Ho, S. C. (Suzanne C.), Hobbs, M. (Michael), Hofman, A. (Albert), Dinc, G. H. (Gonul Horasan), Hormiga, C. M. (Claudia M.), Horta, B. L. (Bernardo L.), Houti, L. (Leila), Howitt, C. (Christina), Htay, T. T. (Thein Thein), Htet, A. S. (Aung Soe), Hu, Y. (Yonghua), Maria Huerta, J. (Jose), Husseini, A. S. (Abdullatif S.), Huybrechts, I. (Inge), Hwalla, N. (Nahla), Iacoviello, L. (Licia), Iannone, A. G. (Anna G.), Ibrahim, M. M. (M. Mohsen), Ikram, M. A. (M. Arfan), Irazola, V. E. (Vilma E.), Islam, M. (Muhammad), Ivkovic, V. (Vanja), Iwasaki, M. (Masanori), Jacobs, J. M. (Jeremy M.), Jafar, T. (Tazeen), Jamrozik, K. (Konrad), Janszky, I. (Imre), Jasienska, G. (Grazyna), Jelakovic, B. (Bojan), Jiang, C. Q. (Chao Qiang), Johansson, M. (Mattias), Jonas, J. B. (Jost B.), Jorgensen, T. (Torben), Joshi, P. (Pradeep), Juolevi, A. (Anne), Jurak, G. (Gregor), Juresa, V. (Vesna), Kaaks, R. (Rudolf), Kafatos, A. (Anthony), Kalter-Leibovici, O. (Ofra), Kamaruddin, N. A. (Nor Azmi), Kasaeian, A. (Amir), Katz, J. (Joanne), Kauhanen, J. (Jussi), Kaur, P. (Prabhdeep), Kavousi, M. (Maryam), Kazakbaeva, G. (Gyulli), Keil, U. (Ulrich), Boker, L. K. (Lital Keinan), Keinanen-Kiukaanniemi, S. (Sirkka), Kelishadi, R. (Roya), Kemper, H. C. (Han C. G.), Kersting, M. (Mathilde), Key, T. (Timothy), Khader, Y. S. (Yousef Saleh), Khalili, D. (Davood), Khang, Y.-H. (Young-Ho), Khaw, K.-T. (Kay-Tee), Kiechl, S. (Stefan), Killewo, J. (Japhet), Kim, J. (Jeongseon), Klumbiene, J. (Jurate), Kolle, E. (Elin), Kolsteren, P. (Patrick), Korrovits, P. (Paul), Koskinen, S. (Seppo), Kouda, K. (Katsuyasu), Koziel, S. (Slawomir), Kristensen, P. L. (Peter Lund), Krokstad, S. (Steinar), Kromhout, D. (Daan), Kruger, H. S. (Herculina S.), Kubinova, R. (Ruzena), Kuciene, R. (Renata), Kuh, D. (Diana), Kujala, U. M. (Urho M.), Kula, K. (Krzysztof), Kulaga, Z. (Zbigniew), Kumar, R. K. (R. Krishna), Kurjata, P. (Pawel), Kusuma, Y. S. (Yadlapalli S.), Kuulasmaa, K. (Kari), Kyobutungi, C. (Catherine), Lachat, C. (Carl), Landrove, O. (Orlando), Lanska, V. (Vera), Lappas, G. (Georg), Larijani, B. (Bagher), Laugsand, L. E. (Lars E.), Le, T. D. (Tuyen D.), Leclercq, C. (Catherine), Lee, J. (Jeannette), Lee, J. (Jeonghee), Lehtimaki, T. (Terho), Lekhraj, R. (Rampal), Leon-Munoz, L. M. (Luz M.), Levitt, N. S. (Naomi S.), Li, Y. (Yanping), Lilly, C. L. (Christa L.), Lim, W.-Y. (Wei-Yen), Fernanda Lima-Costa, M. (M.), Lin, H.-H. (Hsien-Ho), Lin, X. (Xu), Linneberg, A. (Allan), Lissner, L. (Lauren), Litwin, M. (Mieczyslaw), Lorbeer, R. (Roberto), Lotufo, P. A. (Paulo A.), Eugenio Lozano, J. (Jose), Luksiene, D. (Dalia), Lundqvist, A. (Annamari), Lunet, N. (Nuno), Lytsy, P. (Per), Ma, G. (Guansheng), Ma, J. (Jun), Machado-Coelho, G. L. (George L. L.), Machi, S. (Suka), Maggi, S. (Stefania), Magliano, D. J. (Dianna J.), Majer, M. (Marjeta), Makdisse, M. (Marcia), Malekzadeh, R. (Reza), Malhotra, R. (Rahul), Rao, K. M. (Kodavanti Mallikharjuna), Malyutina, S. (Sofia), Manios, Y. (Yannis), Mann, J. I. (Jim I.), Manzato, E. (Enzo), Margozzini, P. (Paula), Marques-Vidal, P. (Pedro), Marrugat, J. (Jaume), Martorell, R. (Reynaldo), Mathiesen, E. B. (Ellisiv B.), Matijasevich, A. (Alicia), Matsha, T. E. (Tandi E.), Mbanya, J. C. (Jean Claude N.), Posso, A. J. (Anselmo J. Mc Donald), McFarlane, S. R. (Shelly R.), McGarvey, S. T. (Stephen T.), McLachlan, S. (Stela), McLean, R. M. (Rachael M.), McNulty, B. A. (Breige A.), Khir, A. S. (Amir Sharifuddin Md), Mediene-Benchekor, S. (Sounnia), Medzioniene, J. (Jurate), Meirhaeghe, A. (Aline), Meisinger, C. (Christa), Menezes, A. M. (Ana Maria B.), Menon, G. R. (Geetha R.), Meshram, I. I. (Indrapal I.), Metspalu, A. (Andres), Mi, J. (Jie), Mikkel, K. (Kairit), Miller, J. C. (Jody C.), Francisco Miquel, J. (Juan), Jaime Miranda, J. (J.), Misigoj-Durakovic, M. (Marjeta), Mohamed, M. K. (Mostafa K.), Mohammad, K. (Kazem), Mohammadifard, N. (Noushin), Mohan, V. (Viswanathan), Yusoff, M. F. (Muhammad Fadhli Mohd), Moller, N. C. (Niels C.), Molnar, D. (Denes), Momenan, A. (Amirabbas), Monyeki, K. D. (Kotsedi Daniel K.), Moreira, L. B. (Leila B.), Morejon, A. (Alain), Moreno, L. A. (Luis A.), Morgan, K. (Karen), Moschonis, G. (George), Mossakowska, M. (Malgorzata), Mostafa, A. (Aya), Mota, J. (Jorge), Motlagh, M. E. (Mohammad Esmaeel), Motta, J. (Jorge), Muiesan, M. L. (Maria L.), Mueller-Nurasyid, M. (Martina), Murphy, N. (Neil), Mursu, J. (Jaakko), Musil, V. (Vera), Nagel, G. (Gabriele), Naidu, B. M. (Balkish M.), Nakamura, H. (Harunobu), Namsna, J. (Jana), Nang, E. E. (Ei Ei K.), Nangia, V. B. (Vinay B.), Narake, S. (Sameer), Maria Navarrete-Munoz, E. (Eva), Ndiaye, N. C. (Ndeye Coumba), Neal, W. A. (William A.), Nenko, I. (Ilona), Nervi, F. (Flavio), Nguyen, N. D. (Nguyen D.), Nieto-Martinez, R. E. (Ramfis E.), Niiranen, T. J. (Teemu J.), Ning, G. (Guang), Ninomiya, T. (Toshiharu), Nishtar, S. (Sania), Noale, M. (Marianna), Noboa, O. A. (Oscar A.), Noorbala, A. A. (Ahmad Ali), Norat, T. (Teresa), Noto, D. (Davide), Al Nsour, M. (Mohannad), O'Reilly, D. (Dermot), Oh, K. (Kyungwon), Olinto, M. T. (Maria Teresa A.), Oliveira, I. O. (Isabel O.), Omar, M. A. (Mohd Azahadi), Onat, A. (Altan), Ordunez, P. (Pedro), Osmond, C. (Clive), Ostojic, S. M. (Sergej M.), Otero, J. A. (Johanna A.), Overvad, K. (Kim), Owusu-Dabo, E. (Ellis), Paccaud, F. M. (Fred Michel), Padez, C. (Cristina), Pahomova, E. (Elena), Pajak, A. (Andrzej), Palli, D. (Domenico), Palmieri, L. (Luigi), Panda-Jonas, S. (Songhomitra), Panza, F. (Francesco), Papandreou, D. (Dimitrios), Parnell, W. R. (Winsome R.), Parsaeian, M. (Mahboubeh), Pecin, I. (Ivan), Pednekar, M. S. (Mangesh S.), Peer, N. (Nasheeta), Peeters, P. H. (Petra H.), Peixoto, S. V. (Sergio Viana), Pelletier, C. (Catherine), Peltonen, M. (Markku), Pereira, A. C. (Alexandre C.), Marina Perez, R. (Rosa), Peters, A. (Annette), Petkeviciene, J. (Janina), Pigeot, I. (Iris), Pikhart, H. (Hynek), Pilav, A. (Aida), Pilotto, L. (Lorenza), Pitakaka, F. (Freda), Plans-Rubio, P. (Pedro), Polakowska, M. (Maria), Polasek, O. (Ozren), Porta, M. (Miquel), Portegies, M. L. (Marileen L. P.), Pourshams, A. (Akram), Pradeepa, R. (Rajendra), Prashant, M. (Mathur), Price, J. F. (Jacqueline F.), Puiu, M. (Maria), Punab, M. (Margus), Qasrawi, R. F. (Radwan F.), Qorbani, M. (Mostafa), Radic, I. (Ivana), Radisauskas, R. (Ricardas), Rahman, M. (Mahfuzar), Raitakari, O. (Olli), Raj, M. (Manu), Rao, S. R. (Sudha Ramachandra), Ramos, E. (Elisabete), Rampal, S. (Sanjay), Rangel Reina, D. A. (Daniel A.), Rasmussen, F. (Finn), Redon, J. (Josep), Reganit, P. F. (Paul Ferdinand M.), Ribeiro, R. (Robespierre), Riboli, E. (Elio), Rigo, F. (Fernando), de Wit, T. F. (Tobias F. Rinke), Ritti-Dias, R. M. (Raphael M.), Robinson, S. M. (Sian M.), Robitaille, C. (Cynthia), Rodriguez-Artalejo, F. (Fernando), Rodriguez-Villamizar, L. A. (Laura A.), Rojas-Martinez, R. (Rosalba), Rosengren, A. (Annika), Rubinstein, A. (Adolfo), Rui, O. (Ornelas), Sandra Ruiz-Betancourt, B. (Blanca), Russo Horimoto, A. R. (Andrea R. V.), Rutkowski, M. (Marcin), Sabanayagam, C. (Charumathi), Sachdev, H. S. (Harshpal S.), Saidi, O. (Olfa), Sakarya, S. (Sibel), Salanave, B. (Benoit), Salazar Martinez, E. (Eduardo), Salmeron, D. (Diego), Salomaa, V. (Veikko), Salonen, J. T. (Jukka T.), Salvetti, M. (Massimo), Sanchez-Abanto, J. (Jose), Sans, S. (Susana), Santos, D. (Diana), Santos, I. S. (Ina S.), dos Santos, R. N. (Renata Nunes), Santos, R. (Rute), Saramies, J. L. (Jouko L.), Sardinha, L. B. (Luis B.), Margolis, G. S. (Giselle Sarganas), Sarrafzadegan, N. (Nizal), Saum, K.-U. (Kai-Uwe), Savva, S. C. (Savvas C.), Scazufca, M. (Marcia), Schargrodsky, H. (Herman), Schneider, I. J. (Ione J.), Schultsz, C. (Constance), Schutte, A. E. (Aletta E.), Sen, A. (Abhijit), Senbanjo, I. O. (Idowu O.), Sepanlou, S. G. (Sadaf G.), Sharma, S. K. (Sanjib K.), Shaw, J. E. (Jonathan E.), Shibuya, K. (Kenji), Shin, D. W. (Dong Wook), Shin, Y. (Youchan), Siantar, R. (Rosalynn), Sibai, A. M. (Abla M.), Santos Silva, D. A. (Diego Augusto), Simon, M. (Mary), Simons, J. (Judith), Simons, L. A. (Leon A.), Sjotrom, M. (Michael), Skovbjerg, S. (Sine), Slowikowska-Hilczer, J. (Jolanta), Slusarczyk, P. (Przemyslaw), Smith, M. C. (Margaret C.), Snijder, M. B. (Marieke B.), So, H.-K. (Hung-Kwan), Sobngwi, E. (Eugene), Soderberg, S. (Stefan), Solfrizzi, V. (Vincenzo), Sonestedt, E. (Emily), Song, Y. (Yi), Sorensen, T. I. (Thorkild I. A.), Jerome, C. S. (Charles Sossa), Soumare, A. (Aicha), Staessen, J. A. (Jan A.), Starc, G. (Gregor), Stathopoulou, M. G. (Maria G.), Stavreski, B. (Bill), Steene-Johannessen, J. (Jostein), Stehle, P. (Peter), Stein, A. D. (Aryeh D.), Stergiou, G. S. (George S.), Stessman, J. (Jochanan), Stieber, J. (Jutta), Stoeckl, D. (Doris), Stocks, T. (Tanja), Stokwiszewski, J. (Jakub), Stronks, K. (Karien), Strufaldi, M. W. (Maria Wany), Sun, C.-A. (Chien-An), Sung, Y.-T. (Yn-Tz), Suriyawongpaisal, P. (Paibul), Sy, R. G. (Rody G.), Tai, E. S. (E. Shyong), Tammesoo, M.-L. (Mari-Liis), Tamosiunas, A. (Abdonas), Tang, L. (Line), Tang, X. (Xun), Tanser, F. (Frank), Tao, Y. (Yong), Tarawneh, M. R. (Mohammed Rasoul), Tarqui-Mamani, C. B. (Carolina B.), Taylor, A. (Anne), Theobald, H. (Holger), Thijs, L. (Lutgarde), Thuesen, B. H. (Betina H.), Tjonneland, A. (Anne), Tolonen, H. K. (Hanna K.), Topbas, M. (Murat), Topor-Madry, R. (Roman), Jose Tormo, M. (Maria), Torrent, M. (Maties), Traissac, P. (Pierre), Trichopoulos, D. (Dimitrios), Trichopoulou, A. (Antonia), Trinh, O. T. (Oanh T. H.), Trivedi, A. (Atul), Tshepo, L. (Lechaba), Tulloch-Reid, M. K. (Marshall K.), Tuomainen, T.-P. (Tomi-Pekka), Turley, M. L. (Maria L.), Tynelius, P. (Per), Tzourio, C. (Christophe), Ueda, P. (Peter), Ugel, E. (Eunice), Ulmer, H. (Hanno), Uusitalo, H. M. (Hannu M. T.), Valdivia, G. (Gonzalo), Valvi, D. (Damaskini), van der Schouw, Y. T. (Yvonne T.), Van Herck, K. (Koen), van Rossem, L. (Lenie), van Valkengoed, I. G. (Irene G. M.), Vanderschueren, D. (Dirk), Vanuzzo, D. (Diego), Vatten, L. (Lars), Vega, T. (Tomas), Velasquez-Melendez, G. (Gustavo), Veronesi, G. (Giovanni), Verschuren, W. M. (W. M. Monique), Verstraeten, R. (Roosmarijn), Victora, C. G. (Cesar G.), Viet, L. (Lucie), Viikari-Juntura, E. (Eira), Vineis, P. (Paolo), Vioque, J. (Jesus), Virtanen, J. K. (Jyrki K.), Visvikis-Siest, S. (Sophie), Viswanathan, B. (Bharathi), Vollenweider, P. (Peter), Vrdoljak, A. (Ana), Vrijheid, M. (Martine), Wade, A. N. (Alisha N.), Wagner, A. (Aline), Walton, J. (Janette), Mohamud, W. N. (Wan Nazaimoon Wan), Wang, M.-D. (Ming-Dong), Wang, Q. (Qian), Wang, Y. X. (Ya Xing), Wannamethee, S. G. (S. Goya), Wareham, N. (Nicholas), Wederkopp, N. (Niels), Weerasekera, D. (Deepa), Whincup, P. H. (Peter H.), Widhalm, K. (Kurt), Widyahening, I. S. (Indah S.), Wiecek, A. (Andrzej), Wijga, A. H. (Alet H.), Wilks, R. J. (Rainford J.), Willeit, P. (Peter), Williams, E. A. (Emmanuel A.), Wilsgaard, T. (Tom), Wojtyniak, B. (Bogdan), Wong, T. Y. (Tien Yin), Wong-McClure, R. A. (Roy A.), Woo, J. (Jean), Wu, A. G. (Aleksander Giwercman), Wu, F. C. (Frederick C.), Wu, S. L. (Shou Ling), Xu, H. (Haiquan), Yan, W. (Weili), Yang, X. (Xiaoguang), Ye, X. (Xingwang), Yiallouros, P. K. (Panayiotis K.), Yoshihara, A. (Akihiro), Younger-Coleman, N. O. (Novie O.), Yusoff, A. F. (Ahmad F.), Zambon, S. (Sabina), Zdrojewski, T. (Tomasz), Zeng, Y. (Yi), Zhao, D. (Dong), Zhao, W. (Wenhua), Zheng, Y. (Yingffeng), Zhu, D. (Dan), Zimmermann, E. (Esther), and Zuniga Cisneros, J. (Julio)

Abstract

Background: Raised blood pressure is an important risk factor for cardiovascular diseases and chronic kidney disease. We estimated worldwide trends in mean systolic and mean diastolic blood pressure, and the prevalence of, and number of people with, raised blood pressure, defined as systolic blood pressure of 140 mm Hg or higher or diastolic blood pressure of 90 mm Hg or higher. Methods: For this analysis, we pooled national, subnational, or community population-based studies that had measured blood pressure in adults aged 18 years and older. We used a Bayesian hierarchical model to estimate trends from 1975 to 2015 in mean systolic and mean diastolic blood pressure, and the prevalence of raised blood pressure for 200 countries. We calculated the contributions of changes in prevalence versus population growth and ageing to the increase in the number of adults with raised blood pressure. Findings: We pooled 1479 studies that had measured the blood pressures of 19.1 million adults. Global age-standardised mean systolic blood pressure in 2015 was 127.0 mm Hg (95% credible interval 125.7–128.3) in men and 122.3 mm Hg (121.0–123.6) in women; age-standardised mean diastolic blood pressure was 78.7 mm Hg (77.9–79.5) for men and 76.7 mm Hg (75.9–77.6) for women. Global age-standardised prevalence of raised blood pressure was 24.1% (21.4–27.1) in men and 20.1% (17.8–22.5) in women in 2015. Mean systolic and mean diastolic blood pressure decreased substantially from 1975 to 2015 in high-income western and Asia Pacific countries, moving these countries from having some of the highest worldwide blood pressure in 1975 to the lowest in 2015. Mean blood pressure also decreased in women in central and eastern Europe, Latin America and the Caribbean, and, more recently, central Asia, Middle East, and north Africa, but the estimated trends in these super-regions had larger uncertainty than in high-income super-regions. By contrast, mean blood pressure might have increased in

Published
2017

31. Simulation of Reconfigurable Field-effect Transistors: Impact of the NiSi2-Si Interfaces, Crystal Orientation, and Strain

Author

Fuchs, F., Schuster, J., Gemming, S., Fuchs, F., Schuster, J., and Gemming, S.

Abstract

Reconfigurable transistors (RFETs) can be switched between electron and hole current by changing the polarity of the gate potential. This allows a much higher functionality and hence, logic operations can be realized with fewer transistors. The device performance of such a transistor is strongly dominated by the contact physics. In this work, the electron transport across the NiSi 2 -Si interface is studied using the NEGF formalism and density functional theory, which allows us to consider the atomic structure of the interface. A new model is then presented which relates the electron transport through the interface to the transfer characteristic of an RFET. The model is compared to experimental data, which shows very good agreement, especially with respect to the ratio between electron and hole current (left figure). Based on the model, different structure variations at the interface and their consequences on the device performance are discussed. It is demonstrated that best symmetry between electron and hole current is achieved for the <110> crystal orientation, which is much worse for <100> orientation (right figure). This makes the <110> orientation advantageous for RFETs. Also the influence of strain generated parallel to the interface plane is investigated (right figure). It is shown that strain can be used to tune the symmetry in case of <110> crystal orientation even further. This is entirely different for the <100> crystal orientation, where the highest electron currents are observed for all strain states. In this state, the electron currents are about three orders of magnitude higher than the hole currents. A detailed discussion of these differences based on work function and band structure analysis will be given in our contribution.

Published
2017

32. Electrical Characterization of sub-20 nm Silicon Nanowires Fabricated using Electron Beam Lithography and Inductively Coupled Plasma Etching

Author

Khan, M. B., Deb, D., Georgiev, Y. M., Fuchs, F., Schuster, J., Erbe, A., Khan, M. B., Deb, D., Georgiev, Y. M., Fuchs, F., Schuster, J., and Erbe, A.

Abstract

Scaling down of CMOS faces strong challenges due to which new materials, enhanced functionality and new device concepts have gained importance. These concepts include undoped silicon nanowire based reconfigurable devices which can be programmed as p-FET or n-FET by controlling the electrostatic potential applied across gate. In this work, electrical characterization of undoped sub-20 silicon nanowires (SiNWs) is reported. SiNWs are fabricated on intrinsic SOI substrates in <110> and <100> crystal directions by a top down approach. Hydrogen silsesquioxane (HSQ), a negative tone electron beam resist is used for nano- patterning as well as hard mask for etching. Nanowire etching process is optimized using an inductively coupled plasma (ICP) source and C4F8/SF6/O2 mixed gas recipe at 18 oC. These NWs are oxidized to form a SiO2 shell and subsequently silicidized. For silicidation the SiO2 shell is wet etched at pre-defined positions followed by Nickel(Ni) sputtering and diffusion which yield silicide-silicon(Schottky) junctions. Ni is used for silicidation to selectively control the charge carriers injection at the junctions. Different transport and silicidation progress was observed in <110> and <100> crystal directions.

Published
2017

33. Electronic Structure Simulation of Thin Silicon Layers: Impact of Orientation, Confinement, and Strain

Author

Joseph, T., Fuchs, F., Schuster, J., Schulz, S. E., Joseph, T., Fuchs, F., Schuster, J., and Schulz, S. E.

Abstract

Fully Depleted Silicon on Insulator transistors (FDSOI) are a promising approach for further scaling. The device features a fully depleted body which is isolated by an insulator box. This introduces better electrostatics, lower leakage current and thus better channel control. The device performance is heavily influenced by the orientation, confinement and strain in the ultra-thin body. In this work the electronic structure of ultra-thin silicon layers is investigated using Density Functional Theory (DFT). The simulation parameters for the model system were calibrated to reproduce the experimental band gap of bulk silicon. This ensures that the model describes the electronic structure of ultra-thin silicon layers accurately. Our study demonstrates the impact of confinement, orientation and strain on material dependent transport properties and their influence on the device performance. For this purpose our results will be used as an input for device simulations using Synopsys Sentaurus TCAD. We find that the band gap of the silicon layer increases with decreasing slab thickness which is a clear indication of quantum confinement. From the simulation, the band gap for the {100} confinement is found to be higher than {110} and {111} scenarios. Band gap is one of the factors which influence the intrinsic carrier in the semiconductor and thereby the transport. Another important factor for the transport is lattice strain. Strain is a useful method for modulating band structures. One good example is the transformation of direct band gap in {100} confined silicon slab to indirect band gap with 2 % biaxial compression. In our presentation we will discuss the influence of the effective mass as well. Furthermore, the strain dependence of the electronic structure and its impact on device properties is analyzed systematically.

Published
2017

34. NiSi2-Si interfaces as building blocks for reconfigurable field-effect transistors: from the atomic structure to device characteristics

Author

Fuchs, F., Schuster, J., Gemming, S., Fuchs, F., Schuster, J., and Gemming, S.

Abstract

The electron transport across metal-semiconductor interfaces is crucial for the functionality of reconfigurable field-effect transistors, which can be switched between electron and hole current. Devices were already fabricated experimentally, however, a profound understanding of the underlaying mechanism is not yet available. This study focuses on the NiSi2-Si interface, which is studied using the NEGF formalism. Based on the calculated transmission spectra, the transfer characteristic of a reconfigurable transistor is obtained using a simplified approach. Even though this model strongly simplifies the electrostatic environment in a transistor, very good agreement with experimental devices is demonstrated. The impact of strain on the device characteristic is studied as well. It is shown that the magnitude of electron and hole current can be altered successfully. They can also be tuned to be symmetric, which fits to experimental observations. Finally, new insight into the device functionality is gained based on our calculations of the work functions and effective masses of the isolated NiSi 2 and Si.

Published
2017

35. Electronic Structure Simulation of Thin Silicon Layers: Impact of Orientation, Confinement, and Strain

Author

Joseph, T., Fuchs, F., Schuster, J., Schulz, S. E., Joseph, T., Fuchs, F., Schuster, J., and Schulz, S. E.

Abstract

Fully Depleted Silicon on Insulator transistors (FDSOI) are a promising approach for further scaling. The device features a fully depleted body which is isolated by an insulator box. This introduces better electrostatics, lower leakage current and thus better channel control. The device performance is heavily influenced by the orientation, confinement and strain in the ultra-thin body. In this work the electronic structure of ultra-thin silicon layers is investigated using Density Functional Theory (DFT). The simulation parameters for the model system were calibrated to reproduce the experimental band gap of bulk silicon. This ensures that the model describes the electronic structure of ultra-thin silicon layers accurately. Our study demonstrates the impact of confinement, orientation and strain on material dependent transport properties and their influence on the device performance. For this purpose our results will be used as an input for device simulations using Synopsys Sentaurus TCAD. We find that the band gap of the silicon layer increases with decreasing slab thickness which is a clear indication of quantum confinement. From the simulation, the band gap for the {100} confinement is found to be higher than {110} and {111} scenarios. Band gap is one of the factors which influence the intrinsic carrier in the semiconductor and thereby the transport. Another important factor for the transport is lattice strain. Strain is a useful method for modulating band structures. One good example is the transformation of direct band gap in {100} confined silicon slab to indirect band gap with 2 % biaxial compression. In our presentation we will discuss the influence of the effective mass as well. Furthermore, the strain dependence of the electronic structure and its impact on device properties is analyzed systematically.

Published
2017

36. NiSi2-Si interfaces as building blocks for reconfigurable field-effect transistors: from the atomic structure to device characteristics

Author

Fuchs, F., Schuster, J., Gemming, S., Fuchs, F., Schuster, J., and Gemming, S.

Abstract

The electron transport across metal-semiconductor interfaces is crucial for the functionality of reconfigurable field-effect transistors, which can be switched between electron and hole current. Devices were already fabricated experimentally, however, a profound understanding of the underlaying mechanism is not yet available. This study focuses on the NiSi2-Si interface, which is studied using the NEGF formalism. Based on the calculated transmission spectra, the transfer characteristic of a reconfigurable transistor is obtained using a simplified approach. Even though this model strongly simplifies the electrostatic environment in a transistor, very good agreement with experimental devices is demonstrated. The impact of strain on the device characteristic is studied as well. It is shown that the magnitude of electron and hole current can be altered successfully. They can also be tuned to be symmetric, which fits to experimental observations. Finally, new insight into the device functionality is gained based on our calculations of the work functions and effective masses of the isolated NiSi 2 and Si.

Published
2017

37. Simulation of Reconfigurable Field-effect Transistors: Impact of the NiSi2-Si Interfaces, Strain, and Crystal Orientation

Author

Fuchs, F., Schuster, J., Gemming, S., Fuchs, F., Schuster, J., and Gemming, S.

Abstract

Reconfigurable transistors (RFETs) can be switched between electron and hole current by changing the polarity of the gate potential. The device performance of such a transistor is strongly dominated by the contact physics. In this work, the electron transport across the NiSi2-Si interface is studied using the NEGF formalism and density functional theory. A new model is presented which relates the electron transport through the interface to the transfer characteristic of an RFET. The model is compared to experimental data showing good agreement. Based on the model, the influence of strain and the choice of the crystal orientation is discussed. It is demonstrated that best symmetry between electron and hole current is achieved for the <110> orientation. Furthermore, this symmetry can be tuned by strain, which is not possible for the <100> and <112> orientations. A discussion of these differences based on band structure analysis will be given, too.

Published
2017

38. Electrical Characterization of sub-20 nm Silicon Nanowires Fabricated using Electron Beam Lithography and Inductively Coupled Plasma Etching

Author

Khan, M. B., Deb, D., Georgiev, Y. M., Fuchs, F., Schuster, J., Erbe, A., Khan, M. B., Deb, D., Georgiev, Y. M., Fuchs, F., Schuster, J., and Erbe, A.

Abstract

Scaling down of CMOS faces strong challenges due to which new materials, enhanced functionality and new device concepts have gained importance. These concepts include undoped silicon nanowire based reconfigurable devices which can be programmed as p-FET or n-FET by controlling the electrostatic potential applied across gate. In this work, electrical characterization of undoped sub-20 silicon nanowires (SiNWs) is reported. SiNWs are fabricated on intrinsic SOI substrates in <110> and <100> crystal directions by a top down approach. Hydrogen silsesquioxane (HSQ), a negative tone electron beam resist is used for nano- patterning as well as hard mask for etching. Nanowire etching process is optimized using an inductively coupled plasma (ICP) source and C4F8/SF6/O2 mixed gas recipe at 18 oC. These NWs are oxidized to form a SiO2 shell and subsequently silicidized. For silicidation the SiO2 shell is wet etched at pre-defined positions followed by Nickel(Ni) sputtering and diffusion which yield silicide-silicon(Schottky) junctions. Ni is used for silicidation to selectively control the charge carriers injection at the junctions. Different transport and silicidation progress was observed in <110> and <100> crystal directions.

Published
2017

39. Simulation of Reconfigurable Field-effect Transistors: Impact of the NiSi2-Si Interfaces, Crystal Orientation, and Strain

Author

Fuchs, F., Schuster, J., Gemming, S., Fuchs, F., Schuster, J., and Gemming, S.

Abstract

Reconfigurable transistors (RFETs) can be switched between electron and hole current by changing the polarity of the gate potential. This allows a much higher functionality and hence, logic operations can be realized with fewer transistors. The device performance of such a transistor is strongly dominated by the contact physics. In this work, the electron transport across the NiSi 2 -Si interface is studied using the NEGF formalism and density functional theory, which allows us to consider the atomic structure of the interface. A new model is then presented which relates the electron transport through the interface to the transfer characteristic of an RFET. The model is compared to experimental data, which shows very good agreement, especially with respect to the ratio between electron and hole current (left figure). Based on the model, different structure variations at the interface and their consequences on the device performance are discussed. It is demonstrated that best symmetry between electron and hole current is achieved for the <110> crystal orientation, which is much worse for <100> orientation (right figure). This makes the <110> orientation advantageous for RFETs. Also the influence of strain generated parallel to the interface plane is investigated (right figure). It is shown that strain can be used to tune the symmetry in case of <110> crystal orientation even further. This is entirely different for the <100> crystal orientation, where the highest electron currents are observed for all strain states. In this state, the electron currents are about three orders of magnitude higher than the hole currents. A detailed discussion of these differences based on work function and band structure analysis will be given in our contribution.

Published
2017

40. Towards an Electronic Model for Reconfigurable Transistors

Author

Fuchs, F., Schuster, J., Gemming, S., Fuchs, F., Schuster, J., and Gemming, S.

Abstract

In contrast to conventional CMOS transistors, reconfigurable field effect transistors (RFETs) can be switched between n- and p-type behavior, which allows more compact and flexible circuit designs [1, 2]. Symmetry between n- and p-current is required and this can be achieved by strain engineering as experimentally demonstrated in Ref. [2]. However, a detailed understanding of the electron transport across the strained interface is not yet available and requires electronic models to capture all relevant transport mechanism. We investigate the relation between strain and electron transport properties of planar interfaces between metallic NiSi 2 and semiconducting Si in <110> crystal orientation. We apply the non-equilibrium Green’s functions formalism together with density functional theory as implemented in Atomistix ToolKit [3] to calculate the transmission spectra. Using a modified version of the Landauer formula, we than obtain an expression for the current through the RFET and hence, the transfer characteristic can be investigated. A comparison between the calculated transfer characteristic using this model and experimental reference data [2] are performed. A very good agreement can be seen which verifies our model. However, in the experiment, the RFET was compressed during the oxidation process. Because the structure in the simulation was supposed to be unstrained, some pre-strain might be present in the simulation. We also study how strain, either applied perpendicular or parallel to the transport direction, alters the current. It can be seen that a small amount of strain is sufficient to change the ratio between n- and p-current and that symmetry can be achieved. Considering the above-mentioned pre-strain in the simulation, the general trend is also in agreement with experimental studies [1, 2]. [1] A. Heinzig et al., Reconfigurable Silicon Nanowire Transistors. Nano Letters 12, 119 (2012) [2] A. Heinzig et al., Dually Active Silicon Nanowire Transistors and C

Published
2016

41. Towards an Electronic Model for Reconfigurable Transistors

Author

Fuchs, F., Schuster, J., Gemming, S., Fuchs, F., Schuster, J., and Gemming, S.

Abstract

In contrast to conventional CMOS transistors, reconfigurable field effect transistors (RFETs) can be switched between n- and p-type behavior, which allows more compact and flexible circuit designs [1, 2]. Symmetry between n- and p-current is required and this can be achieved by strain engineering as experimentally demonstrated in Ref. [2]. However, a detailed understanding of the electron transport across the strained interface is not yet available and requires electronic models to capture all relevant transport mechanism. We investigate the relation between strain and electron transport properties of planar interfaces between metallic NiSi 2 and semiconducting Si in <110> crystal orientation. We apply the non-equilibrium Green’s functions formalism together with density functional theory as implemented in Atomistix ToolKit [3] to calculate the transmission spectra. Using a modified version of the Landauer formula, we than obtain an expression for the current through the RFET and hence, the transfer characteristic can be investigated. A comparison between the calculated transfer characteristic using this model and experimental reference data [2] are performed. A very good agreement can be seen which verifies our model. However, in the experiment, the RFET was compressed during the oxidation process. Because the structure in the simulation was supposed to be unstrained, some pre-strain might be present in the simulation. We also study how strain, either applied perpendicular or parallel to the transport direction, alters the current. It can be seen that a small amount of strain is sufficient to change the ratio between n- and p-current and that symmetry can be achieved. Considering the above-mentioned pre-strain in the simulation, the general trend is also in agreement with experimental studies [1, 2]. [1] A. Heinzig et al., Reconfigurable Silicon Nanowire Transistors. Nano Letters 12, 119 (2012) [2] A. Heinzig et al., Dually Active Silicon Nanowire Transistors and C

Published
2016

42. Comparison of Atomistic Quantum Transport and Numerical Device Simulation for Carbon Nanotube Field-effect Transistors

Author

Fuchs, F., Zienert, A., Mothes, S., Claus, M., Gemming, S., Schuster, J., Fuchs, F., Zienert, A., Mothes, S., Claus, M., Gemming, S., and Schuster, J.

Abstract

Carbon nanotube field-effect transistors (CNTFETs) are studied using atomistic quantum transport simulation and numerical device simulation. The studied CNTFETs consist of n-doped source- and drain-electrodes with an ideal wrap-around gate. Both the off- as well as the on-currents are described in very good agreement by both methods, which verifies the employed simplified approach in the numerical device simulation. The off-current is strongly dependent on interband tunneling in the studied CNTFETs. Thus, the good agreement between the methods verifies the tunneling model in the numerical device simulator, which can therefore be used to describe other tunneling devices, too. On the basis of the two methods we also discuss the effect of different channel lengths and aggressive gate scaling.

Published
2016

43. Comparison of Atomistic Quantum Transport and Numerical Device Simulation for Carbon Nanotube Field-effect Transistors

Author

Fuchs, F., Zienert, A., Mothes, S., Claus, M., Gemming, S., Schuster, J., Fuchs, F., Zienert, A., Mothes, S., Claus, M., Gemming, S., and Schuster, J.

Abstract

Carbon nanotube field-effect transistors (CNTFETs) are studied using atomistic quantum transport simulation and numerical device simulation. The studied CNTFETs consist of n-doped source- and drain-electrodes with an ideal wrap-around gate. Both the off- as well as the on-currents are described in very good agreement by both methods, which verifies the employed simplified approach in the numerical device simulation. The off-current is strongly dependent on interband tunneling in the studied CNTFETs. Thus, the good agreement between the methods verifies the tunneling model in the numerical device simulator, which can therefore be used to describe other tunneling devices, too. On the basis of the two methods we also discuss the effect of different channel lengths and aggressive gate scaling.

Published
2016

44. Electronic Structure and Transport Properties of Thin Silicon Nanowires

Author

Fuchs, F., Gemming, S., Schuster, J., Fuchs, F., Gemming, S., and Schuster, J.

Abstract

Silicon nanowires (SiNWs) are promising candidates as building blocks for electronic devices. For the simulation of SiNWs, numerical device simulations, based on the silicon bulk band structure, are often used. When the diameter of the wires is reduced, however, atomistic quantum simulations become mandatory at some point. In the present work, thin hydrogen-passivated SiNWs with diameters between 1 and 6 nm are studied by means of density functional theory. It is shown that the band gap approaches the bulk value in the limit of infinitely thick nanowires and increases for thin wires due to quantum confinement. Using a radially resolved density of states it is demonstrated, that the density of states is highest in the nanowire center, where most of the current transport would occur, and decreases near the surface. Comparing the density of states between SiNWs with different diameters, the transition to bulk silicon can be observed. This justifies the use of bulk band structure approximations for thicker SiNWs, but also highlights the need for atomistic quantum simulations in case of thinner ones.

Published
2016

45. Investigation of Carbon Nanotube Field-effect Transistors Using Atomistic Quantum Transport and Numerical Device Simulation

Author

Fuchs, F., Zienert, A., Schuster, J., Mothes, S., Claus, M., Gemming, S., Fuchs, F., Zienert, A., Schuster, J., Mothes, S., Claus, M., and Gemming, S.

Abstract

Carbon nanotube based field-effect transistors (CNTFETs) are studied by using atomistic quantum transport simulation and numerical device simulation. Atomistic simulations are based on the non-equilibrium Green’s functions formalism, where self-consistent extended Hückel theory is used [1]. We apply a parameter set previously developed in our group to describe contacts between metals and carbon nanotubes with a density functional theory (DFT)-like accuracy [2]. Numerical device simulations based on the effective-mass Schrödinger equation are done for comparison [3] to highlight the strengths but also the limitations of this widely used method. The studied CNTFETs consist of n-doped source- and drain-electrodes together with an ideal wrap-around gate. Thus, the transistor exhibits Ohmic contacts and is comparable to the one studied experimentally by Lu et al. [4]. Different CNTs with diameters ranging from 0.5 nm (7,0-CNT) to 1.3 nm (16,0-CNT) are compared. For larger diameters, band-to-band tunneling (BTBT) takes place, leading to ambipolar transfer characteristics. For small diameters, however, states within the channel are strongly localized and the BTBT is subsequently suppressed, resulting in very high on/off ratios of about 107 and ideal unipolar transfer characteristics. We investigate how different device parameters influence the device performance and show that the studied CNTFET shows excellent properties for channel lengths down to 8 nm and for a very small gate electrode of only 0.4 nm length. Finally, a comparison between the atomistic model and numerical device simulation is given. We show that the on- and off-currents are described in very good agreement and discuss the differences with respect to the switching behavior. [1] Calculations performed using Atomistix ToolKit 12.8 (www.quantumwise.com) [2] Zienert et al., Nanotechnology 25 (2014) [3] Claus et al., Journal of Computational Electronics 13 (2014) [4] Lu et al., Journal of the American Chemical

Published
2016

46. Characterization of silicon nanowires with NiSi2 Schottky contacts fabricated by top-down process

Author

Deb, D., Fuchs, F., (0000-0002-3146-8031) Georgiev, Y., (0000-0003-0455-1945) Gemming, S., Schuster, J., Erbe, A., Deb, D., Fuchs, F., (0000-0002-3146-8031) Georgiev, Y., (0000-0003-0455-1945) Gemming, S., Schuster, J., and Erbe, A.

Abstract

We report on characterization of reconfigurable, undoped silicon nanowire field effect transistors (FETs) with an axial heterostructure (metal/intrinsic-silicon/metal) fabricated on silicon on insulator (SOI) substrates by top-down process. Reconfigurable Si nanowire transistors with Schottky junctions can be reversely configured as p-FET or n-FET simply by the application of back gate electric signal. The fabrication scheme is based on electron beam lithography (EBL) using hydrogen silsesquioxane (HSQ), a negative-tone electron beam resist, followed by inductively-coupled plasma (ICP) etching. We produced silicon nanowires of 20 nm width and nanowire arrays with a pitch of ≈ 200 nm. Nickel was sputtered on the Si nanowires at lithographically defined areas followed by thermal annealing to create nickel-silicide Schottky junctions inside the nanowires which also act as source-drain contacts. Diffusion of Ni in Si nanowires was precisely controlled by the radial crystal orientation of the nanowires, which was checked by transmission electron microscopy (TEM). TEM images show atomic sharp NiSi2-silicon junctions. Quantum transport simulations using non-equilibrium Green’s functions show changes in local density of states at the NiSi2-Si interface. Calculations also confirm that at the NiSi2-Si junction the Schottky barrier, heights for electron and holes are equal.

Published
2016

47. An Atomistic Model for Carbon Nanotube Based Field-effect Transistors: Interband Tunneling and Device Scaling

Author

Fuchs, F., Zienert, A., Schuster, J., Gemming, S., Fuchs, F., Zienert, A., Schuster, J., and Gemming, S.

Abstract

We study carbon nanotube based field-effect transistors (CNTFETs) consisting of n-doped source and drain electrodes together with an ideal wrap-around gate. This system is comparable to the one studied experimentally by Lu et al. [1] and is our model for comparing different simulation approaches. In this contribution, we present our results based on a fully atomistic quantum transport model. Carbon nanotubes (CNTs) with diameters ranging from 0.5 nm to 1.3 nm, which corresponds to the (7,0) CNT and (16,0) CNT, respectively, are studied. We find that in case of thick CNTs, the band-to-band tunneling (BTBT) strongly increases the leakage current in the off-state. This leads to ambipolar transfer characteristics in agreement with experimental results1. Concerning very thin CNTs, the BTBT has not been studied in much detail, yet. We demonstrate that for these kind of CNTs, states within the channel are strongly localized. They do not allow carrier transport and thus suppress the BTBT, which results in ideal unipolar transfer characteristics and on/off ratios of about 107. We furthermore present a systematic investigation of the relation between device parameters and the resulting transistor characteristics, which can guide future device scaling. Thin CNTs for example allow outstanding device properties even for short channel lengths down to 8 nm. It is crucial to maintain channel control in ultra-scaled transistors. Thus, our studies also elucidate the impact of aggressive gate scaling. Even for a very small gate electrode of only 0.4 nm length, good switching properties can be preserved. The non-equilibrium Green’s functions formalism together with self-consistent extended Hückel theory is used for the simulations. Thanks to a parameter set previously developed in our group [2], we can describe CNTs with a density functional theory-like accuracy. [1] Lu et al., Journal of the American Chemical Society 128 (2006) [2] Zienert et al., Nanotechnology 25 (2014)

Published
2016

48. Stress Analysis in Semiconductor Devices by Kelvin Probe Force Microscopy

Author

Sheremet, E., Fuchs, F., Paul, S. D., Haas, S., Vogel, D., Rodriguez, R. D., Zienert, A., Schuster, J., Reuter, D., Geßner, T., Zahn, D. R. T., Hietschold, M., Sheremet, E., Fuchs, F., Paul, S. D., Haas, S., Vogel, D., Rodriguez, R. D., Zienert, A., Schuster, J., Reuter, D., Geßner, T., Zahn, D. R. T., and Hietschold, M.

Abstract

The determination of built-in strain in semiconductor devices with nanometer spatial resolution and high sensitivity is needed for the characterization of nanoscale electronic devices. Kelvin probe force microscopy (KPFM) is an atomic force microscopy-based method that provides the spatially resolved surface potential at the sample surface, fulfilling the requirements on resolution and sensitivity. The contrast observed in KPFM imaging is often attributed to stress, but there are only a few reports on the application of KPFM for quantitative stress analysis [1]. In this contribution we focus on the application of KPFM for analysis of stress in silicon devices, such as copper through silicon vias and silicon membranes. The experimental results are compared with density functional theory calculations of strained silicon. This work provides critical insights into the quantitative determination of stress at the nanoscale that so far has gone largely unnoticed in the scanning probe microscopy community. [1] W. Li, D.Y. Li, J. Appl. Phys. 99, 073502 (2006).

Published
2016

49. Comparison of Atomistic Quantum Transport and Numerical Device Simulation for Carbon Nanotube Field-effect Transistors

Author

Fuchs, F., Zienert, A., Mothes, S., Claus, M., Gemming, S., Schuster, J., Fuchs, F., Zienert, A., Mothes, S., Claus, M., Gemming, S., and Schuster, J.

Abstract

Carbon nanotube field-effect transistors (CNTFETs) are studied using atomistic quantum transport simulation and numerical device simulation. The studied CNTFETs consist of n-doped source- and drain-electrodes with an ideal wrap-around gate. Both the off- as well as the on-currents are described in very good agreement by both methods, which verifies the employed simplified approach in the numerical device simulation. The off-current is strongly dependent on interband tunneling in the studied CNTFETs. Thus, the good agreement between the methods verifies the tunneling model in the numerical device simulator, which can therefore be used to describe other tunneling devices, too. On the basis of the two methods we also discuss the effect of different channel lengths and aggressive gate scaling.

Published
2016

50. Characterization of silicon nanowires with NiSi2 Schottky contacts fabricated by top-down process

Author

Deb, D., Fuchs, F., (0000-0002-3146-8031) Georgiev, Y., (0000-0003-0455-1945) Gemming, S., Schuster, J., (0000-0001-6368-8728) Erbe, A., Deb, D., Fuchs, F., (0000-0002-3146-8031) Georgiev, Y., (0000-0003-0455-1945) Gemming, S., Schuster, J., and (0000-0001-6368-8728) Erbe, A.

Abstract

We report on characterization of reconfigurable, undoped silicon nanowire field effect transistors (FETs) with an axial heterostructure (metal/intrinsic-silicon/metal) fabricated on silicon on insulator (SOI) substrates by top-down process. Reconfigurable Si nanowire transistors with Schottky junctions can be reversely configured as p-FET or n-FET simply by the application of back gate electric signal. The fabrication scheme is based on electron beam lithography (EBL) using hydrogen silsesquioxane (HSQ), a negative-tone electron beam resist, followed by inductively-coupled plasma (ICP) etching. We produced silicon nanowires of 20 nm width and nanowire arrays with a pitch of ≈ 200 nm. Nickel was sputtered on the Si nanowires at lithographically defined areas followed by thermal annealing to create nickel-silicide Schottky junctions inside the nanowires which also act as source-drain contacts. Diffusion of Ni in Si nanowires was precisely controlled by the radial crystal orientation of the nanowires, which was checked by transmission electron microscopy (TEM). TEM images show atomic sharp NiSi2-silicon junctions. Quantum transport simulations using non-equilibrium Green’s functions show changes in local density of states at the NiSi2-Si interface. Calculations also confirm that at the NiSi2-Si junction the Schottky barrier, heights for electron and holes are equal.

Published
2016

Catalog

Books, media, physical & digital resources
See catalog results