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A device for acoustic particle manipulation in the40 MHz range for continuous-flow operation in a 50 μm wide PDMS channel has been evaluated. Unidirectionalinterdigital transducers on a Y-cut Z-propagation lithiumniobate wafer were used to excite a surface acoustic wavethat generated an acoustic standing wave inside the microfluidicchannel. It was shown that particle alignment nodeswith different inter-node spacing could be obtained,depending on device design and driving frequency. Theobserved inter-node spacing differed from the standard halfwavelengthinter-node spacing generally employed in bulkacoustic transducer excited resonant systems. This effectand the related issue of acoustic node positions relative thechannel walls, which is fundamental for most continuousflow particle manipulation operations in channels, wasevaluated in measurements and simulations. Specificapplications of particle separation and alignment wherethese systems can offer benefits relative state-of the artdesigns were identified., VR, "Thin Film Guided Microacoustic Waves in Periodical Systems: Theory and Applications "

Surface acoustic wave (SAW) excitation of an acoustic field in a trapezoidal glass microfluidic channel for particle manipulation in continuous flow has been demonstrated. A unidirectional interdigital transducer (IDT) on a Y-cut Z-propagation lithium niobate (LiNbO3) substrate was used to excite a surface acoustic wave at approximately 35 MHz. An SU8 layer was used for adhesive bonding of the superstrate glass layer and the substrate piezoelectric layer. This work extends the use of SAWs for acoustic manipulation to also include glass channels in addition to prior work with mainly poly-di-methyl-siloxane channels. Efficient alignment of 1.9 mu m polystyrene particles to narrow nodal regions was successfully demonstrated. In addition, particle alignment with only one IDT active was realized. A finite element method simulation was used to visualize the acoustic field generated in the channel and the possibility of 2D alignment into small nodal regions was demonstrated.

A shear mode AlN solidly mounted resonator (SMR) microfluidic sensor system was fabricated and characterized. The AlN SMR fabrication process is fully IC compatible and uses reactive sputtering to deposit piezoelectric AlN thin films with a non-zero mean inclination of the c-axis, which allows in-liquid operation through the excitation of the shear mode. Silicone encapsulation bonded on top of the Si sensor chip includes a microfluidic system to transport the analyte and confine the flow to the active area of the sensor chip. The sensor operation in air, water, glycerol and acetone was characterized. The resonator had a resonance frequency of around 1.2 GHz and a Q value in water of around 100. Results concerning the stability and resolution are also presented. The results indicate a potential of highly sensitive low-cost microfluidic sensor systems for applications in, e.g. point-of-care testing., WISENET

This letter discusses the design of thickness shear mode thin-film bulk acoustic resonator (FBAR) sensor array for in liquid operation with respect to minimizing the observed Q-degradation and crosstalk., Electronically published since May 11, 2010, WISENET

Particle manipulation utilizing interface acoustic waves (IAWs) is proposed for the first time. An IAW-based manipulation system has been designed, micromachined and tested. This work addresses the issue of particle manipulation in microfluidic channels with particular emphasis on particles with submicron dimensions. The subject is of significant relevance for a range of bio-technological applications and in particular for lab-on-chip ones. Submicron particle manipulation in continuous flow has been demonstrated., VR Granted "Thin Film Guided Microacoustic Waves: Theory and Appliactions"

WISENET

The work in question addresses the issue of continuous flow particle manipulation in liquid media with particularemphasis on particles with micron and sub-micron dimensions.The subject is of significant relevance for a range of biotechnological applications and in particular for lab-on-chip ones.Particle manipulation utilizing Interface Acoustic Waves (IAW)is proposed for the first time. Manipulation of submicron sized particles is successfully demonstrated in a streaming free regime., In Print, VR granted: "Thin Film Guided Microacoustic Waves in Periodical Systems: Theory and Applications"

Electroacoustic technology has in many ways revolutionised the wireless telecommunication industry. The IC compatible fabrication technique of thin film electroacoustic devices has so far provided a considerable increase in device performance and reduction in size. At the moment, new areas where this technology can be of use is under investigation. In particular, thin film bulk acoustic wave resonators are promising candidates for biochemical and gravimetric sensor applications. For bulk acoustic waves, the thesis addresses a number of aspects in the design, fabrication, characterisation, and integration of thin film electroacoustic devices. The object of the studies conducted in the thesis has been to improve on design and thereby optimise the performance of the device to fit a particular application of interest. For high frequency and high power applications, a conceptually new design of the solidly mounted resonator has been investigated. A 1 GHz plate wave resonator with a much higher Q factor than its surface acoustic counterpart have also been fabricated. A multi-chip-module 2 GHz microwave oscillator featuring a monolithically integrated solidly mounted resonator and a flip chip transistor have been fabricated and characterised with a phase noise of -125 dBc/Hz at 100 kHz. For sensor applications, the fabrication of shear mode solidly mounted resonators featuring c-axis inclined AlN films has been studied. A process for the bonding of a microfluidic system on top of the resonator has been realised. Further, the effect of conductive liquids on the resonator performance has been investigated.For surface acoustic wave devices, acoustic manipulation of particles in microfluidic channels has been studied. Two functional devices have been fabricated by bonding piezoelectric substrates to glass or fused silica superstrates. By generating an interface acoustic wave, that propagates along the bonded interface, manipulation of sub-micrometer particles was realised., wisenet

Electroacoustic technology has in many ways revolutionised the wireless telecommunication industry. The IC compatible fabrication technique of thin film electroacoustic devices has so far provided a considerable increase in device performance and reduction in size. At the moment, new areas where this technology can be of use is under investigation. In particular, thin film bulk acoustic wave resonators are promising candidates for biochemical and gravimetric sensor applications. For bulk acoustic waves, the thesis addresses a number of aspects in the design, fabrication, characterisation, and integration of thin film electroacoustic devices. The object of the studies conducted in the thesis has been to improve on design and thereby optimise the performance of the device to fit a particular application of interest. For high frequency and high power applications, a conceptually new design of the solidly mounted resonator has been investigated. A 1 GHz plate wave resonator with a much higher Q factor than its surface acoustic counterpart have also been fabricated. A multi-chip-module 2 GHz microwave oscillator featuring a monolithically integrated solidly mounted resonator and a flip chip transistor have been fabricated and characterised with a phase noise of -125 dBc/Hz at 100 kHz. For sensor applications, the fabrication of shear mode solidly mounted resonators featuring c-axis inclined AlN films has been studied. A process for the bonding of a microfluidic system on top of the resonator has been realised. Further, the effect of conductive liquids on the resonator performance has been investigated.For surface acoustic wave devices, acoustic manipulation of particles in microfluidic channels has been studied. Two functional devices have been fabricated by bonding piezoelectric substrates to glass or fused silica superstrates. By generating an interface acoustic wave, that propagates along the bonded interface, manipulation of sub-micrometer particles was realised., wisenet

Electroacoustic technology has in many ways revolutionised the wireless telecommunication industry. The IC compatible fabrication technique of thin film electroacoustic devices has so far provided a considerable increase in device performance and reduction in size. At the moment, new areas where this technology can be of use is under investigation. In particular, thin film bulk acoustic wave resonators are promising candidates for biochemical and gravimetric sensor applications. For bulk acoustic waves, the thesis addresses a number of aspects in the design, fabrication, characterisation, and integration of thin film electroacoustic devices. The object of the studies conducted in the thesis has been to improve on design and thereby optimise the performance of the device to fit a particular application of interest. For high frequency and high power applications, a conceptually new design of the solidly mounted resonator has been investigated. A 1 GHz plate wave resonator with a much higher Q factor than its surface acoustic counterpart have also been fabricated. A multi-chip-module 2 GHz microwave oscillator featuring a monolithically integrated solidly mounted resonator and a flip chip transistor have been fabricated and characterised with a phase noise of -125 dBc/Hz at 100 kHz. For sensor applications, the fabrication of shear mode solidly mounted resonators featuring c-axis inclined AlN films has been studied. A process for the bonding of a microfluidic system on top of the resonator has been realised. Further, the effect of conductive liquids on the resonator performance has been investigated.For surface acoustic wave devices, acoustic manipulation of particles in microfluidic channels has been studied. Two functional devices have been fabricated by bonding piezoelectric substrates to glass or fused silica superstrates. By generating an interface acoustic wave, that propagates along the bonded interface, manipulation of sub-micrometer particles was realised., wisenet

Electroacoustic technology has in many ways revolutionised the wireless telecommunication industry. The IC compatible fabrication technique of thin film electroacoustic devices has so far provided a considerable increase in device performance and reduction in size. At the moment, new areas where this technology can be of use is under investigation. In particular, thin film bulk acoustic wave resonators are promising candidates for biochemical and gravimetric sensor applications. For bulk acoustic waves, the thesis addresses a number of aspects in the design, fabrication, characterisation, and integration of thin film electroacoustic devices. The object of the studies conducted in the thesis has been to improve on design and thereby optimise the performance of the device to fit a particular application of interest. For high frequency and high power applications, a conceptually new design of the solidly mounted resonator has been investigated. A 1 GHz plate wave resonator with a much higher Q factor than its surface acoustic counterpart have also been fabricated. A multi-chip-module 2 GHz microwave oscillator featuring a monolithically integrated solidly mounted resonator and a flip chip transistor have been fabricated and characterised with a phase noise of -125 dBc/Hz at 100 kHz. For sensor applications, the fabrication of shear mode solidly mounted resonators featuring c-axis inclined AlN films has been studied. A process for the bonding of a microfluidic system on top of the resonator has been realised. Further, the effect of conductive liquids on the resonator performance has been investigated.For surface acoustic wave devices, acoustic manipulation of particles in microfluidic channels has been studied. Two functional devices have been fabricated by bonding piezoelectric substrates to glass or fused silica superstrates. By generating an interface acoustic wave, that propagates along the bonded interface, manipulation of sub-micrometer particles was realised., wisenet

For use in thin film electroacoustic (TEA) technology a few hundred nanometrethick nickel silicide (NiSi) electrode would need to be fabricated. A complete fabrication process for the formation of over 200 nm thick silicide films has been optimised for use as an electroacoustic electrode. Optimisation of silicidation temperature and identification of the mono phase of silicide is demonstrated. Thick electrodes are formed by depositing multilayers of silicon and nickel pairs onto silicon (Si) substrates before rapid thermal annealing. The numbers of multilayers and relative material thicknesses are optimized for both surface roughness and electrical resistivity. The growth of textured aluminium nitride (AlN) has been investigated on the optimised surfaces., SSF ICTEA, WISENET

A new design of a solidly mounted resonator (SMR) that utilizes an all-metal Bragg reflector eliminating thus the need for a bottom electrode is proposed. In this configuration, the role of the bottom electrode is taken by the Bragg reflector rendering the resonator “combined electrode-Bragg reflector SMR”. The main advantages of the proposed design are the substantially reduced electrode resistance (and hence higher Q), the utilization of the full piezoelectric coupling at high frequencies as well as expected improvement in power handling capabilities due to lower dissipation and improved heat conductivity. Resonators with the classical and the new design have been fabricated and evaluated. The measurements indicate that indeed the resonators with the new design demonstrate improved performance., WISENET, ICTEA (SSF)

SSF-ICTEA, WISENET

A 2 GHz oscillator based on a solidly mounted AlN thin-film bulk acoustic resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon multi-chip module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a high-resistivity silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset.

Oscillators based on AlN thin-film bulk acoustic resonators are designed, fabricated and measured. The circuits are realised as silicon-on-silicon multichip modules where SiGe transistors are flip-chip mounted on a novel carrier substrate which includes monolithically integrated resonators and passive components. The paper describes the development and processing of the carrier substrate and resonators, as well as the development of the oscillator circuits. The oscillators operate at 2 GHz. Measurements of the oscillators reveal a lowest phase-noise of -125 dBc/Hz at 100 kHz offset., WISENET

WISENET

Highly c-oriented aluminum nitride (AlN) thin piezoelectric films have been grown by pulsed direct-current (DC) magnetron reactive sputter deposition. The films were deposited at room temperature and had a typical full width half maximum (FWHM) value of the (0 0 2) rocking curve of around 2°. Resonant devices in thin film plates having surface acoustic wave (SAW) based designs were fabricated by means of low resolution photolithography. The devices were designed to operate with the fast Rayleigh and Lamb modes respectively. Both types of devices exhibited propagation velocities in excess of 10 000 m/s and sufficient electromechanical couplings. The device measurements illustrate the big potential of these modes for the development of low cost IC compatible electroacoustic devices in the lower GHz range. The basic properties of the modes studied are discussed in a comparative manner. Potential commercial applications are also outlined.

Semiconducting boron doped single-crystal CVD diamond has been patterned using aluminum masks and an inductively coupled plasma (ICP) etch system. For comparison insulating HPHT diamond samples were also patterned using the same process. Diamond etch rates above 200 nm/min were obtained with an O2/Ar discharge for a gas pressure of 2.5 mTorr using 600 W RF power. We have accomplished the fabrication of structures with a minimum feature size of 1 μm with vertical sidewalls in both CVD and HPHT diamond. The ICP etching produced smooth surfaces with a typical root-mean-square surface roughness of 3 nm. The dependence of etch rate on bias voltage was somewhat different for the two types of diamond. However, for all samples both the etch rate and anisotropy were found to improve with increasing bias voltage.