Search

This paper presents a printed patch antenna design to achieve frequency and bandwidth reconfigurability. Two RF PIN diodes are simultaneously operated to achieve the multi-reconfigurability operation. The patch is inspired from a circular loop design. The basic structure of loop is altered, and PIN diodes are integrated into the patch. The antenna operates in dual band configuration at 3.42 and 8.02 GHz in the diodes ‘OFF’ state, whereas the antenna switches to triple band operation at 2.21, 4.85, and 10.19 GHz in the diodes ‘ON’ state. Moreover, the antenna also exhibits an increased bandwidth from 7.54 to 12 GHz in the diodes ‘ON’ state, as compared to a narrow bandwidth from 7.71 to 8.48 GHz in the diodes ‘OFF’ state. The proposed antenna structure is implemented and fabricated using FR4 epoxy substrate of relative permittivity 4.4, and thickness 1.6 mm. Implemented design exhibits measured gains of 3.06 dBi, 2.81 dBi, and 2.92 dBi at 2.21, 4.85, and 10.19 GHz in the PIN diodes ‘ON’ state, respectively, while in the PIN diodes ‘OFF’ state, at 3.42 GHz the gain is 3.03 dBi and at 8.02 GHz the gain is 3.37 dBi. Overall, simulation results agree well with the measured results.

This paper presents a printed patch antenna design to achieve frequency and bandwidth reconfigurability. Two RF PIN diodes are simultaneously operated to achieve the multi-reconfigurability operation. The patch is inspired from a circular loop design. The basic structure of loop is altered, and PIN diodes are integrated into the patch. The antenna operates in dual band configuration at 3.42 and 8.02 GHz in the diodes ‘OFF’ state, whereas the antenna switches to triple band operation at 2.21, 4.85, and 10.19 GHz in the diodes ‘ON’ state. Moreover, the antenna also exhibits an increased bandwidth from 7.54 to 12 GHz in the diodes ‘ON’ state, as compared to a narrow bandwidth from 7.71 to 8.48 GHz in the diodes ‘OFF’ state. The proposed antenna structure is implemented and fabricated using FR4 epoxy substrate of relative permittivity 4.4, and thickness 1.6 mm. Implemented design exhibits measured gains of 3.06 dBi, 2.81 dBi, and 2.92 dBi at 2.21, 4.85, and 10.19 GHz in the PIN diodes ‘ON’ state, respectively, while in the PIN diodes ‘OFF’ state, at 3.42 GHz the gain is 3.03 dBi and at 8.02 GHz the gain is 3.37 dBi. Overall, simulation results agree well with the measured results.