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1. Application of RADSAFE to Model Single Event Upset Response of a 0.25 micron CMOS SRAM

Author

Warren, Kevin M, Weller, Robert A, Sierawski, Brian, Reed, Robert A, Mendenhall, Marcus H, Schrimpf, Ronald D, Massengill, Lloyd, Porter, Mark, Wilkerson, Jeff, LaBel, Kenneth A, and Adams, James

Subjects
Electronics And Electrical Engineering
Abstract

The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.

Published
2006

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