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5 results on '"Fafard S"'

1. Island Shape Instabilities and Surfactant-Like Effects in the Growth of InGaAs/GaAs Quantum Dots

Author

Fafard, S, Cockayne, D, Zou, J, Liao, X, Lobo, C, and Leon, R

Abstract

InGaAs/GaAs island formation during vapor phase epitaxy showed diverging behaviors when varying group V partial pressures (PP). Differences include changes in critical thicknesses for the onset of the Stranski-Krastanow (S-K) transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing.

Published
1999

2. Ensemble Interactions in Strained Semiconductor Quantum Dot

Author

Leon, R, Marcinkevicius, S, Liao, X, Zou, J, Cockayne, D, and Fafard, S

Abstract

Large variations in InGaAs quantum dot concentrations were obtained with simultaneous growths on vicinal GaAs[001] substrates with different surface step densities.

Published
1999

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