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In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

Conventional methods used to measure the cold-test interaction impedance of helical slow-wave structures involve perturbing a helical circuit with a cylindrical dielectric rod placed on the central axis of the circuit. It has been shown that the difference in resonant frequency or axial phase shift between the perturbed and unperturbed circuits can be related to the interaction impedance. However, because of the complex configuration of the helical circuit, deriving this relationship involves several approximations. With the advent of accurate three-dimensional (3-D) helical circuit models, these standard approximations can be fully investigated. This paper addresses the most prominent approximations made in the analysis for measured interaction impedance by Lagerstrom and investigates their accuracy using the 3-D simulation code MAFIA. It is shown that a more accurate value of interaction impedance can be obtained by using 3-D computational methods rather than performing costly and time consuming experimental cold-test measurements.

Conventional methods used to measure the cold- test interaction impedance of helical slow-wave structures involve perturbing a helical circuit with a cylindrical dielectric rod placed on the central axis of the circuit It has been shown that the difference in resonant frequency or axial phase shift between the perturbed and unperturbed circuits can be related to the interaction impedance. However, because of the complex configuration of the helical circuit, deriving this relationship involves several approximations. With the advent of accurate three-dimensional (3-D) helical circuit models, these standard approximations can be fully Investigated. This paper addresses the most prominent approximations made in the analysis for measured interaction impedance by Lagerstrom and investigates their accuracy using the 3-D simulation code MAFIA. It is shown that a more accurate value of interaction impedance can be obtained by using 3-D computational methods rather than performing costly and time consuming experimental cold-test measurements.

This paper presents a theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes. The model describes the connection between the leakage current associated with the traps and the trap characteristics: concentration, energy level, and capture cross sections. It is observed that the above two types of diodes differ the voltage dependence of the trap-assisted tunneling current and dynamic resistance. The model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated dc characteristics of the photodiodes supports the validity of the model.

Zinc is a major residue impurity in the preparation of solar-grade silicon material by the zinc vapor reduction of silicon tetrachloride. This paper projects that in order to get a 17-percent AM1 cell efficiency for the Block IV module of the Low-Cost Solar Array Project, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14 atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17-percent AM1 efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double-acceptor zinc centers are obtained from previous high-field measurements as well as new measurements at zero field described in this paper. These rates are used in the exact dc-circuit model to compute the projections.

Tests were conducted at NASA Lewis to measure the bit-error-rate performance of two 30-GHz 200-W coupled-cavity traveling-wave tubes (TWTs). The transmission effects of each TWT on a band-limited 220-Mbit/s SMSK signal were investigated. The tests relied on the use of a recently developed digital simulation and evaluation system constructed at Lewis as part of the 30/20-GHz technology development program. This paper describes the approach taken to test the 30-GHz tubes and discusses the test data. A description of the bit-error-rate measurement system and the adaptations needed to facilitate TWT testing are also presented.

This paper reports on the progress in implementing optical interconnections for VLSI. Four areas are covered: (1) the holographic optical element (HOE), (2) the laser sources, (3) the detectors and associated circuits forming an optically addressed gate, and (4) interconnection experiments in which five gates are actuated from one source. A laser scanner system with a resolution of 12 x 20 microns has been utilized to generate the HOEs. Diffraction efficiency of the HOE and diffracted spot size have been measured. Stock lasers have been modified with a high-frequency package for interconnect experiments, and buried heterostructure fabrication techniques have been pursued. Measurements have been made on the fabricated photodetectors to determine dark current, responsivity, and response time. The optical gates and the overall chip have been driven successfully with an input light beam, as well as with the optical signal interconnected through the one to five holograms.

This paper presents the results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contacts. Polysilicon contacts were deposited and heat treated at different conditions. The electrical properties were measured using p-n junction test structures that are much more sensitive to the contact properties than are bipolar transistors. A simple phenomenological model was used to correlate the structural properties with electrical measurements. Possible transport mechanisms are examined and estimates are made about upper bounds on transport parameters in the principal regions of the devices. The main conclusion of this study is that the minority-carrier transport in the polycrystalline silicon is dominated by a highly disordered layer at the polysilicon-monosilicon interface characterized by very low minority-carrier mobility. The effective recombination velocity at the n(+) polysilicon-n(+) monosilicon interface was found to be a strong function of fabrication conditions. The results indicate that the recombination velocity can be much smaller than 10,000 cm/s.

In this paper, the linearized relativistic Vlasov equation is solved and a dispersion relation is calculated for the interaction between a relativistic electron beam and the electromagnetic fields of a rectangular waveguide supporting TE(mn) modes. The dispersion relation is simplified to the special case of a frame of reference moving with the electrons and the resulting coupling coefficient epsilon(mn)super l is calculated for various TE(mn) modes. The dependence of epsilon(mn)super l on the parity of the harmonic number l and various mn modes of the waveguide are discussed.

The paper investigates the effects of metallic impurities on the performance of silicon solar cells. Czochralski and polycrystalline ingots were employed with boron and phosphorus as primary dopants and with controlled additions of secondary impurities. The data obtained from over 200 crystals indicate that impurity-induced performance loss is primarily due to a reduction of the base diffusion length. Based on this observation, a model is developed which predicts cell performance as a function of secondary impurity concentrations. The model calculations are in good agreement with experimental values except for Cu, Ni, Fe, and to a lesser degree, carbon, which at higher concentrations degrade the cell by junction defect mechanisms.

The paper presents a low-high-low GaAs IMPATT model used to define design windows at the frequency of interest. Emphasis is placed on experimental verification confirming both the utility of the model and the design windows obtained therefrom. It is noted that the model can be also useful during fabrication.

The paper examines efficiency enhancement of coupled-cavity traveling-wave tube (TWT) through cavity resonance tapering. Beam-wave resynchronization through circuit velocity reduction is used for TWT efficiency enhancement, with circuit velocity reduction in coupled cavity TWT's accomplished through period tapering. However, the amount of the latter is limited by the stability considerations, so that beyond a critical value of velocity reduction, the tube may be subject to zero drive oscillations originating in the velocity taper region. The coupled-cavity resonance tapering allows the velocity reduction to continue beyond the limit of stable period tapering, and it is accomplished by a gradual reduction in the cavity resonance frequency, with the period and the circuit bandwidth unchanged. The advantages of cavity resonance tapering vs period tapering are discussed, and test data are presented with the results of large-signal computer calculations. It is shown that cavity resonance tapering can produce efficiencies as period tapering without incurring the same risk of lower band-edge oscillations.

The paper presents an analytical treatment of transparent-emitter devices, particularly solar cells, that is more complete than previously available treatments. The proposed approach includes the effects of bandgap narrowing, Fermi-Dirac statistics, built-in field due to impurity profile, and a finite surface recombination velocity at the emitter surface. It is demonstrated that the transparent-emitter model can predict experimental values of Voc observed on n(plus)-p thin diffused junction silicon solar cells made on low-resistivity (0.1 ohm-cm) substrates. A test is included for the self-consistent validity of the transparent-emitter model. This test compares the calculated transit time of minority carriers across the emitter with the Auger-impact minority-carrier lifetime within the emitter region.

The spatial variation of the chemical composition of a semiconductor modifies the ideal one-electron energy band model as well as the Shockley equations for carrier recombination and transport in two important ways. The random component of the spatial variation introduces localized states in the energy gap by perturbing the band states. The nonrandom component gives rise to the position dependences of the conduction and valence band edges or the electron affinity and the energy gap. This paper gives the modifications of the Shockley equations from these two effects as well as an example of the steady-state recombination rate from distributed gap states in junction solar cells

This paper discusses the performance limitations of silicon solar cells which have been identified and investigated using a detailed numerical analysis of solar cell operation. Efficiency limitations are discussed as related to doping densities, minority carrier lifetimes, widths of solar cell regions, surface recombination, antireflecting layers, and ohmic contact stripes. Areas in which improvements can be expected in performance are identified and discussed.