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A liquid precursor for 3D printing ultramicroporous carbons (pore width <0.7 nm) to create a novel in-plane capacitive-analog of semiconductor-based diodes (CAPodes) is presented. This proof-of-concept integrates functional EDLCs into microstructured iontronic devices. The working principle is based on selective ion-sieving, controlling the size of the electrolyte ions, and the nanoporous sieving carbon's pore size. By blocking bulky electrolyte ions from entering the sub-nanometer pores, a unidirectional charging characteristic with controllable ion flux is achieved, leading to diodic U-I characteristics with a high rectification ratio. The liquid precursor approach enables successful printing of miniaturized in-plane CAPodes. A combination of inkjet and extrusion printing techniques with suitable inks is explored to fabricate electrode materials with engineered porosity. Deliberate fine-tuning of the ultramicroporous carbon's porosity and surface area is achieved using a customized carbon precursor and CO 2 etching techniques. Electrochemical evaluation of the printed CAPodes demonstrates successful miniaturization compared with macroscopic film assembly. 3D manufacturing and miniaturization allow for the integration of CAPodes into logic gate circuits (OR, AND). For the first time, these switchable devices are used as variable capacitors in a high-pass filter application, adjusting the cut-off frequency of applied alternating voltage analogous to an I-MOS varactor., (© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.)

In this paper, we propose a dual-mode frequency selective rasorber (FSR) with tunable transmission and absorption windows at the X-band, which shows a broad passband in each transmission window. The proposed tunable FSR consists of a lossy absorption layer, a lossless transmission layer, and an air gap between them. The top frequency selective surface (FSS) layer is a cross-shaped meandering line with resistors and varactors for tunable absorption, and the bottom layer is a cross-shaped gap with varactors to achieve tunable bandpass. The equivalent circuit model (ECM) is investigated, and the 3D full wave simulation is performed. The results are based on simulations, and the simulation results show that the passband can be tuned from 12 to 8 GHz with an insertion loss between 0.5 and 1.4 dB by sweeping the capacitance of the varactors. The proposed design decreases the chances of detection by adversary devices and assures spectrum-safe communication, thereby creating new avenues for radar stealth and target concealment.

This study proposes a high-temperature superconducting (HTS) bandpass filter with a continuously tunable bandwidth and center frequency. The proposed filter combines several gallium arsenide varactors and a dual-mode resonator (DMR). The even and odd modes of the DMR can be tuned simultaneously using a single bias voltage. The capacitive value of varactors in the circuit is tuned continuously under continuous voltage and frequency tunability. External couplings and the interstage can be realized using an interdigital coupling structure; a fixed capacitor is added to the feeder to improve its coupling strength. A low-insertion loss within the band is obtained using HTS technology. Additionally, the proposed filter is etched on a 0.5 mm-thick MgO substrate and combined with YBCO thin films for demonstration. For the as-fabricated device, the tuning frequency range of 1.22~1.34 GHz was 9.4%; the 3-dB fractional bandwidth was 12.95~17.39%, and the insertion loss was 2.28~3.59 dB. The simulation and experimental measurement results were highly consistent.

Inductor-capacitor voltage controlled oscillators (LC-VCOs) are the most common type of oscillator used in sensors systems, such as transceivers for wireless sensor networks (WSNs), VCO-based reading circuits, VCO-based radar sensors, etc. This work presents a technique to reduce the LC-VCOs phase noise using a new current-shaping method based on a feedback injection mechanism with only two additional transistors. This technique consists of keeping the negative resistance seen from LC tank constant throughout the oscillation cycle, achieving a significant phase noise reduction with a very low area increase. To test this method an LC-VCO was designed, fabricated and measured on a wafer using 90 nm CMOS technology with 1.2 V supply voltage. The oscillator outputs were buffered using source followers to provide additional isolation from load variations and to boost the output power. The tank was tuned to 1.8 GHz, comprising two 1.15 nH with 1.5 turns inductors with a quality factor (Q) of 14, a 3.27 pF metal-oxide-metal capacitor, and two varactors. The measured phase noise was -112 dBc/Hz at 1 MHz offset. Including the pads, the chip area is 750 × 850 μm2.

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga 2 O 3 ) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.

It is of both fundamental importance and practical value to measure the frequency of an LC resonator beyond the near-field region, especially when the resonator is used as a standalone capacitive sensor embedded inside a closed environment. To improve the coupling efficiency between the resonator and the external sniffer loop, we propose a novel method to integrate the LC resonator with a wirelessly-powered parametric resonator whose oscillation signal can be remotely identified in a noisy background. By measuring the minimum power level that is required for oscillation at different pumping frequencies, the resonator can be indirectly characterized by the frequency response curve. Starting from the basic principle of parametric oscillation, we will predict the measurable extremities in the frequency-dependent power curve under various circumstances that are classified based on the relative ratio between the lower and higher resonance frequencies. Our analytical models are validated by on-bench measurements performed on several parametric resonators with different circuit topologies. Their ability for remote characterization will make parametric resonators useful in structural health sensors or biomedical implants.

A novel graphene-based variable capacitor (varactor) that senses glucose based on the quantum capacitance effect was successfully developed. The sensor utilizes a metal-oxide-graphene varactor device structure that is inherently compatible with passive wireless sensing, a key advantage for in vivo glucose sensing. The graphene varactors were functionalized with pyrene-1-boronic acid (PBA) by self-assembly driven by π-π interactions. Successful surface functionalization was confirmed by both Raman spectroscopy and capacitance-voltage characterization of the devices. Through glucose binding to the PBA, the glucose concentration in the buffer solutions modulates the level of electrostatic doping of the graphene surface to different degrees, which leads to capacitance changes and Dirac voltage shifts. These responses to the glucose concentration were shown to be reproducible and reversible over multiple measurement cycles, suggesting promise for eventual use in wireless glucose monitoring.

Understanding the interactions of ambient molecules with graphene and adjacent dielectrics is of fundamental importance for a range of graphene-based devices, particularly sensors, where such interactions could influence the operation of the device. It is well-known that water can be trapped underneath graphene and its host substrate; however, the electrical effect of water beneath graphene and the dynamics of how the interfacial water changes with different ambient conditions has not been quantified. Here, using a metal-oxide-graphene variable-capacitor (varactor) structure, we show that graphene can be used to capacitively sense the intercalation of water between graphene and HfO2 and that this process is reversible on a fast time scale. Atomic force microscopy is used to confirm the intercalation and quantify the displacement of graphene as a function of humidity. Density functional theory simulations are used to quantify the displacement of graphene induced by intercalated water and also explain the observed Dirac point shifts as being due to the combined effect of water and oxygen on the carrier concentration in the graphene. Finally, molecular dynamics simulations indicate that a likely mechanism for the intercalation involves adsorption and lateral diffusion of water molecules beneath the graphene.