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Binary rutile oxides of 5d metals such as IrO 2 stand out in comparison to their 3d and 4d counterparts due to limited experimental studies, despite rich predicted quantum phenomena. Here, we investigate the electrical transport properties of IrO 2 by engineering epitaxial thin films grown using hybrid molecular beam epitaxy. Our findings reveal phonon-limited carrier transport and thickness-dependent anisotropic in-plane resistance in IrO 2 (110) films, the latter suggesting a complex relationship between strain relaxation and orbital hybridization. Magnetotransport measurements reveal a previously unobserved nonlinear Hall effect. A two-carrier analysis of this effect shows the presence of minority carriers with mobility exceeding 3000 cm 2 /(V s) at 1.8 K. These results point toward emergent properties in 5d metal oxides that can be controlled using dimensionality and epitaxial strain.

X-ray diffraction from dislocation half-loops consisting of a misfit segment with two threading arms extending from it to the surface is calculated by the Monte Carlo method. The diffraction profiles and reciprocal space maps are controlled by the ratio of the total lengths of the misfit and the threading segments of the half-loops. A continuous transformation from the diffraction characteristic of misfit dislocations to that of threading dislocations with increasing thickness of epitaxial film is studied. Diffraction from dislocations with edge- and screw-type threading arms is considered and the contributions of the two types of dislocations are compared., (© Vladimir M. Kaganer 2024.)

Transmission electron microscopy (TEM) has emerged as a valuable tool for assessing and mapping strain fields within materials. By directly analyzing local atomic spacing variations, TEM enables the precise measurement of local strain with high spatial resolution. However, it is standard practice to use thin specimens in TEM analysis to ensure electron transparency and minimize issues such as projection artifacts and contributions from multiple scattering. This raises an important question regarding the extent of structural modification, such as strain relaxation, induced in thin samples due to the increased surface-to-volume ratio and the thinning process. In this study, we conducted a systematic investigation to quantify the influence of TEM sample thickness on the residual strain field using deformed Fe-based and Zr-based metallic glasses as model systems. The samples were gradually thinned from 300 nm to 70 nm, and the same area was examined using 4D-STEM with identical imaging settings. Our results demonstrate that thinning the sample affects the atomic configuration at both the short-range (SR) and medium-range (MR) scales. Consequently, when the sample is thinned too much, it no longer preserves the native deformation structure. These findings highlight the critical importance of maintaining sufficient TEM sample thickness for obtaining meaningful and accurate strain measurements., Competing Interests: Declaration of Competing Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper., (Copyright © 2023. Published by Elsevier B.V.)

The fabrication of high-efficiency GaAsP-based solar cells on GaAs wafers requires addressing structural issues arising from the materials lattice mismatch. We report on tensile strain relaxation and composition control of MOVPE-grown As-rich GaAs 1-x P x /(100)GaAs heterostructures studied by double-crystal X-ray diffraction and field emission scanning electron microscopy. Thin (80-150 nm) GaAs 1-x P x epilayers appear partially relaxed (within 1-12% of the initial misfit) through a network of misfit dislocations along the sample [011] and [011-] in plane directions. Values of the residual lattice strain as a function of epilayer thickness were compared with predictions from the equilibrium (Matthews-Blakeslee) and energy balance models. It is shown that the epilayers relax at a slower rate than expected based on the equilibrium model, an effect ascribed to the existence of an energy barrier to the nucleation of new dislocations. The study of GaAs 1-x P x composition as a function of the V-group precursors ratio in the vapor during growth allowed for the determination of the As/P anion segregation coefficient. The latter agrees with values reported in the literature for P-rich alloys grown using the same precursor combination. P-incorporation into nearly pseudomorphic heterostructures turns out to be kinetically activated, with an activation energy E A = 1.41 ± 0.04 eV over the entire alloy compositional range.

The high porosity of a GaN porous structure (PS) makes it mechanically semi-flexible and can shield against the stress from the thick growth template on an overgrown layer to control the lattice structure or composition within the overgrown layer. To understand this stress shield effect, we investigated the lattice constant variations among different growth layers in various samples of overgrown Al 0.3 Ga 0.7 N on GaN templates under different strain-relaxation conditions based on d-spacing crystal lattice analysis. The fabrication of a strain-damping PS in a GaN template shields against the stress from the thick GaN template on the GaN interlayer, which lies between the PS and the overgrown AlGaN layer, such that the stress counteraction of the AlGaN layer against the GaN interlayer can reduce the tensile strain in AlGaN and increase its critical thickness. If the GaN interlayer is thin, such that a strong AlGaN counteraction occurs, the increased critical thickness can become larger than the overgrown AlGaN thickness. In this situation, crack-free, thick AlGaN overgrowth is feasible.

Cracking has been recognized as a major obstacle degrading material properties, including structural stability, electrical conductivity, and thermal conductivity. Recently, there have been several reports on the nanosized cracks (nanocracks), particularly in the insulating oxides. In this work, we comprehensively investigate how nanocracks affect the physical properties of metallic SrRuO 3 (SRO) thin films. We grow SRO/SrTiO 3 (STO) bilayers on KTaO 3 (KTO) (001) substrates, which provide +1.7% tensile strain if the SRO layer is grown epitaxially. However, the SRO/STO bilayers suffer from the generation and propagation of nanocracks, and then, the strain becomes inhomogeneously relaxed. As the thickness increases, the nanocracks in the SRO layer become percolated, and its dc conductivity approaches zero. Notably, we observe an enhancement of the local optical conductivity near the nanocrack region using scanning-type near-field optical microscopy. This enhancement is attributed to the strain relaxation near the nanocracks. Our work indicates that nanocracks can be utilized as promising platforms for investigating local emergent phenomena related to strain effects.

Mg 3 Sb 2 -based compounds are one type of important room-temperature thermoelectric materials and the appropriate candidate of type-II nodal line semimetals. In Mg 3 Sb 2 -based films, compelling research topics such as dimensionality reduction and topological states rely on the controllable preparation of films with high crystallinity, which remains a big challenge. In this work, high quality Mg 3 Sb 2 films are successfully grown on mismatched substrates of sapphire (000 l ), while the temperature-driven twin structure evolution and characteristics of the electronic structure are revealed in the as-grown Mg 3 Sb 2 films by in situ and ex situ measurements. The transition of layer-to-island growth of Mg 3 Sb 2 films is kinetically controlled by increasing the substrate temperature ( T sub ), which is accompanied with the rational manipulation of twin structure and epitaxial strains. Twin-free structure could be acquired in the Mg 3 Sb 2 film grown at a low T and annealing, in close relation to the processes of strain relaxation and enhanced mass transfer. Measurements of scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES) elucidate the intrinsic p-type conduction of Mg sub of 573 K, while the formation of twin structure is significantly promoted by elevating the T sub and annealing, in close relation to the processes of strain relaxation and enhanced mass transfer. Measurements of scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES) elucidate the intrinsic p-type conduction of Mg 3 Sb 2 films and a bulk band gap of ~0.89 eV, and a prominent Fermi level downshift of ~0.2 eV could be achieved by controlling the film growth parameters. As elucidated in this work, the effective manipulation of the epitaxial strains, twin structure and Fermi level is instructive and beneficial for the further exploration and optimization of thermoelectric and topological properties of Mg 3 Sb 2 -based films., Competing Interests: The authors declare no conflict of interest.

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

Although the photovoltaic performance of perovskite solar cells (PSCs) has reached the commercial standards, the unsatisfactory stability limits their further application. Hydrophobic interface and encapsulation can block the damage of water and oxygen, while the instability induced by intrinsic residual strain remains inevitable. Here, the residual strain in a two-dimensional (2D) Ruddlesden-Popper (RP) perovskite film is investigated by X-ray diffraction and atomic force microscopy. It's found that the spacer cations contribute to the residual strain even though they are not in the inorganic cages. Benefited from strain relaxation, the film quality is improved, leading to suppressed recombination, promoted charge transport and enhanced efficiency. More significantly, the strain-released devices maintain 86 % of the initial efficiency after being kept in air with 85 % relative humidity (RH) for 1080 h, 82 % under maximum power point (MPP) tracking at 50 °C for 804 h and 86 % after continuous heating at 85 °C for 1080 h., (© 2022 Wiley-VCH GmbH.)

A three-dimensional kinetic Monte Carlo methodology is developed to study the strained epitaxial growth of wurtzite GaN/AlN quantum dots. It describes the kinetics of effective GaN adatoms on an hexagonal lattice. The elastic strain energy is evaluated by a purposely devised procedure: first, we take advantage of the fact that the deformation in a lattice-mismatched heterostructure is equivalent to that obtained by assuming that one of the regions of the system is subjected to a properly chosen uniform stress (Eshelby inclusion concept), and then the strain is obtained by applying the Green's function method. The standard Monte Carlo method has been modified to implement a multiscale algorithm that allows the isolated adatoms to perform long diffusion jumps. With these state-of-the art modifications, it is possible to perform efficiently simulations over large areas and long elapsed times. We have taylored the model to the conditions of molecular beam epitaxy under N-rich conditions. The corresponding simulations reproduce the different stages of the Stranski-Krastanov transition, showing quantitative agreement with the experimental findings concerning the critical deposition, and island size and density. The influence of growth parameters, such as the relative fluxes of Ga and N and the substrate temperature, is also studied and found to be consistent with the experimental observations. In addition, the growth of stacked layers of quantum dots is also simulated and the conditions for their vertical alignment and homogenization are illustrated. In summary, the developed methodology allows one to reproduce the main features of the self-organized quantum dot growth and to understand the microscopic mechanisms at play.

Semipolar (112¯2) InGaN/GaN superlattice templates with different periodical InGaN layer thicknesses were grown on m-plane sapphire substrates using metal-organic chemical vapor deposition (MOCVD). The strain in the superlattice layers, the relaxation mechanism and the influence of the strain relaxation on the semipolar superlattice template were explored. The results demonstrated that the strain in the (112¯2) InGaN/GaN superlattice templates was anisotropic and increased with increasing InGaN thickness. The strain relaxation in the InGaN/GaN superlattice templates was related to the formation of one-dimension misfit dislocation arrays in the superlattice structure, which caused tilts in the superlattice layer. Whereas, the rate of increase of the strain became slower with increasing InGaN thickness and new misfit dislocations emerged, which damaged the quality of the superlattice relaxed templates. The strain relaxation in the superlattice structure improved the surface microtopography and increased the incorporation of indium in the InGaN epitaxial layers.

The exotic transverse resistivity in magnetic materials has received intense research because of possible new emergent physics. Here, we report the strain-relaxation induced transverse resistivity anomaly in Mn 2 CoAl epitaxial films through lithography engineering. The anomalous Hall resistivityρxyAHdecreases from 0.48 to 0.17 μ Ω cm at 10 K when the widths of the Hall bar decreases from 40 to 1  μ m, and the temperature dependence ofρxyAHreverses for the 1.4  μ m deep-etched samples. Importantly, Hall resistivity anomalies appear in the 1 μ m-wide and 1.4 μ m-wide deep-etched Hall bar samples, which can be well explained by the two-channel transport mechanism. We believe that these observations can be attributed to the strain relaxation effect when the Hall bar width is narrowed to around 1  μ m. Our work shows that the induced strain relaxation can possibly lead to the alternation of the materials' electronic structure, and the size effect should be considered when the sample size is reduced to about 1  μ m., (© 2022 IOP Publishing Ltd.)

Strain engineering in bimetallic alloy structures is of great interest in electrochemical CO 2 reduction reactions (CO 2 RR), in which it simultaneously improves electrocatalytic activity and product selectivity by optimizing the binding properties of intermediates. However, a reliable synthetic strategy and systematic understanding of the strain effects in the CO 2 RR are still lacking. Herein, we report a strain relaxation strategy used to determine lattice strains in bimetal MNi alloys (M = Pd, Ag, and Au) and realize an outstanding CO 2 -to-CO Faradaic efficiency of 96.6% and show the outstanding activity and durability toward a Zn-CO 2 battery. Molecular dynamics (MD) simulations predict that the relaxation of strained PdNi alloys (s-PdNi) is correlated with increases in synthesis temperature, and the high temperature activation energy drives complete atomic mixing of multiple metal atoms to allow for regulation of lattice strains. Density functional theory (DFT) calculations reveal that strain relaxation effectively improves CO 2 RR activity and selectivity by optimizing the formation energies of *COOH and *CO intermediates on s-PdNi alloy surfaces, as also verified by in situ spectroscopic investigations. This approach provides a promising approach for catalyst design, enabling independent optimization of formation energies of reaction intermediates to improve catalytic activity and selectivity simultaneously.

Strain engineering plays an important role in tuning the microstructure and properties of heterostructures. The key to implement the strain modulation to heterostructures is controlling the strain relaxation, which is generally realized by varying the thickness of thin films or changing substrates. Here, we show that interface polarity can tailor the behavior of strain relaxation in a hexagonal manganite film, whose strain state can be tuned to different extents. Using scanning transmission electron microscopy, a reconstructed atomic layer with elongated interlayer spacing and minor in-plane rotation is observed at the interface, suggesting that the bond hierarchy at interface transits from three-dimension to two-dimension, which accounts for the strain-free heteroepitaxy. Utilizing interface polarity to control the strain relaxation highlights a conceptually opt route to optimize the strain engineering and the realization of strain-free heteroepitaxy in such highly lattice-mismatched heterostructure also provides possibility to transform more bulklike functional oxides to low dimensionality.

Despite the rapid development of CsPbI x Br 3- x (0 ≤ x ≤ 3) inorganic perovskite solar cells, associated with their superior thermal stability, their low moisture stability limits their commercial deployment. In this study, 1D-2D-3D multidimensional coupled perovskites are prepared by means of an in situ self-integration approach. This pioneering method allows incorporating thus far unreported 1D-Tpy 2 Pb 3 I 6 and 2D-TpyPb 3 I 6 (Tpy; terpyridine) perovskites. Heterojunction perovskites demonstrate superior stability against water in comparison with control 3D CsPbI 2 Br, which is related to the hydrophobicity of low-dimension (LD) perovskites. Remarkably, the spontaneous involvement of LD perovskites can adjust/reconstruct the interfacial structure. This modification allows releasing the residual strain, establishing effective charge transfer channels that increase the carrier transport ability. Accordingly, 1D-2D-3D hybrid CsPbI 2 Br perovskite solar cells demonstrate a stabilized power conversion efficiency as high as 16.1%, which represents a very significant improvement, by a factor of 43%, with respect to control 3D CsPbI 2 Br perovskite solar cell. Equally importantly, the multidimensional coupled perovskite solar cells exhibit extraordinary stability, well above 1000 h in ambient atmosphere., (© 2021 Wiley-VCH GmbH.)

In situ metal-organic chemical vapor deposition growth of SiN x passivation layers is reported on AlGaN/GaN high-electron-mobility transistors (HEMTs) without surface damage. A higher SiN x growth rate, when produced by higher SiH 4 reactant gas flow, enables faster lateral coverage and coalescence of the initial SiN x islands, thereby suppressing SiH 4 -induced III-nitride etching. The effect of in situ SiN x passivation on the structural properties of AlGaN/GaN HEMTs has been evaluated using high-resolution X-ray diffraction. Electrical properties of the passivated HEMTs were evaluated by clover-leaf van der Pauw Hall measurements. The key findings include (a) a correlation of constituent gas chemistry with SiN x stoichiometry, (b) the degree of suppression of strain relaxation in the barrier layer that can be optimized through the SiN x stoichiometry, and (c) optimum strain relaxation by tailoring the SiN x passivation layer stoichiometry that can result in near-ideal AlGaN/AlN/GaN interfaces. The latter is expected to reduce the carrier scatterings and improve electron mobility. Under optimized conditions, low sheet resistance and high electron mobility are obtained. At 10 K, a sheet resistance of 33 Ω/sq and a mobility of 16,500 cm 2 /V-s are achieved. At 300 K, the sheet resistance is 336 Ω/sq and mobility is 2020 cm 2 /V-s with a sheet charge density of 0.78 × 10 13 cm -2 .

Highly conductive domain walls in insulating ferroelectric LiNbO 3 (LNO) single-crystal thin films with atomic smoothness are attractive for use in high-density integration of the ferroelectric domain wall random access memory (DWRAM) because of their excellent reliability and high read currents. However, downscaling of the memory size to the nanoscale could cause poor polarization retention. Understanding the size-dependent electrical performance of a memory cell is therefore crucial. In this work, highly insulating X-cut LNO thin films were bonded to SiO 2 /Si wafers and lateral mesa-like cells were fabricated on the film surfaces, where contact occurred with two-sided electrodes along the polar z -axis. Under application of an in-plane electric field above a coercive field ( E c ), the domain within each memory cell was switched to be antiparallel to the unswitched referencing domain at the bottom; this resulted in the formation of a conducting domain wall, which enables the nondestructive readout strategy of the DWRAM. The cell, which has a lateral length ( l ) above a critical size ( l 0 ) of 105 nm, is found to be a mixture of two phases across the cell area. The inner area of the cell suffers from poor polarization retention because E c = 150 kV/cm, as demonstrated by in-plane piezoresponse force microscopy imaging. In comparison, the outer periphery domains, which have lengths of 70 nm (∼ l 0 /2), show good retention but require a much higher E c of 785 kV/cm. The relevant physics is discussed as phase reconstruction occurs after release of the in-plane compressive strain near the outer regions; the results show good agreement with those of one-dimensional thermodynamic calculations and phase-field simulations. The measured current-voltage curves demonstrated a sudden enhancement of the wall current across the cell when l < l 0 , thus implying higher readout wall currents and better retention for the DWRAM at higher storage densities.

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH 3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH 3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH 3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH 3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

In this study, the Moiré sampling Scanning Transmission Electron Microscopy Geometrical Phase Analysis (or STEM Moiré GPA) strain characterization method is compared to the well-established Dark-Field Electron Holography technique on a thin film stack grown by Molecular Beam Epitaxy. While experimental data obtained with the two techniques are, overall, in good qualitative agreement, small statistically relevant differences are locally observed between the two methods. The results obtained from both techniques are further confronted with Finite Element Method (FEM) mechanical simulations modeling the strain relaxation phenomena from a thin lamella. The FEM simulation highlights a non-uniform deformation field along the beam propagation direction with a higher deformation level near the surface of the lamella compared to the center of the same lamella. The center-surface strain differences obtained from modeling are consistent with the experimentally derived differences accounting for the fact that the SMG method is sensitive to the strain state of the surface of the lamella with a very narrow depth-of-field, and the DFEH technique is measuring the strain state of the center of the same lamella averaging over a large section of the thickness. The depth-of-field difference between both methods can be reasonably related to their respective contrast mechanisms (STEM vs Conventional Transmission Electron Microscopy). As the SMG method is using a convergent probe, the narrow depth-of-field might be used to sense the deformation field over different sections of the lamella using the defocus and potentially retrieve the three-dimensional strain field., (Copyright © 2021. Published by Elsevier B.V.)

Heteroepitaxial modification of nanomaterials has become a powerful means to create novel functionalities for various applications. One of the most elementary factors in heteroepitaxial nanostructures is the misfit strain arising from mismatched lattices of the constituent parts. Misfit strain not only dictates epitaxy kinetics for diversifying nanocrystal morphologies but also provides rational control over materials properties. In recent years, advances in chemical synthesis along with the rapid development of electron microscopy and X-ray diffraction techniques have enabled a substantial understanding of strain-related processes, which offers theoretical foundation and experimental guidance for researchers to refine heteroepitaxial nanostructures and their properties. Herein, recent investigations on heterogeneous core-shell nanocrystals containing misfit strains are summarized, with a focus on the mechanistic understanding of strain and strain-induced effects such as tuning the epitaxial habit, modulating the optical emission, and enhancing the catalytic activity and magnetic coercivity., (© 2020 Wiley-VCH GmbH.)

A mechanistic understanding of the growth of multiply twinned nanoparticles (MTPs), such as decahedra (Dh) and icosahedra (Ih), is crucial for precisely controlled syntheses and applications. Despite previous successes, no consensus has been reached regarding the multiple competing growth pathways for MTPs proposed thus far, in part due to the lack of information about their nucleation and growth dynamics. Here, we used decahedral and icosahedral gold nanoparticles as a model system in conjunction with in situ liquid cell transmission electron microscopy (LCTEM) to investigate the nucleation and growth dynamics of MTPs in aqueous solution; two growth pathways were successfully identified: (A) nucleation-based layer-by-layer growth from a rounded multiply twinned seed and (B) the successive twinning and growth of tetrahedra. The LCTEM results enabled us to directly and conclusively identify the growth behaviors of intermediate products. The internal strain relaxation mechanisms and growth kinetics differ for the two pathways: in pathway A, a MTP grew by the opening and closing of re-entrant grooves at the twin boundaries, which was not found in pathway B. We also analyzed different MTP growth pathways from an energetic perspective and discussed how the preferred pathway (A or B) is related to factors, such as the initial seed yield and the size- and morphology-dependent formation of MTPs. Our results contextualize the current understanding of MTP formation mechanisms and provide insightful guidance for the precisely controlled synthesis of MTPs for practical applications.

GeSn alloys have the potential of extending the Si photonics functionality in shortwave infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a relaxed Ge buffer on Si(100) wafer by using high power impulse magnetron sputtering (HiPI-MS). Detailed X-ray reciprocal space mapping and HRTEM investigations indicate higher crystalline quality of GeSn epitaxial layers deposited by Ge HiPI-MS compared to commonly used radio frequency magnetron sputtering (RF-MS). To obtain a rectifying heterostructure for SWIR light detection, a layer of GeSn nanocrystals (NCs) embedded in oxide was deposited on the epitaxial GeSn one. Embedded GeSn NCs are obtained by cosputtering deposition of (Ge 1- x Sn x ) 1- y (SiO 2 ) y layers and subsequent rapid thermal annealing at a low temperature of 400 °C. Intrinsic GeSn structural defects give p-type behavior, while the presence of oxygen leads to the n-character of the embedded GeSn NCs. Such an embedded NCs/epitaxial GeSn p-n heterostructure shows superior photoelectrical response up to 3 orders of magnitude increase in the 1.2-2.5 μm range, as compared to performances of diode based only on embedded NCs.

Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O 3 ) as oxidant precursor and post-deposition thermal annealing (TA) are investigated. Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm, respectively. Post-deposition thermal annealing is conducted at 300 °C in the ambience of oxygen (O 2 ) for 1 h. With strong oxidizing agent O 3 and post-deposition TA in growing ZnO, intrinsic strain and stress are reduced to 0.49% and 2.22 GPa, respectively, with extremely low background electron concentration (9.4 × 10 15  cm -3 ). This is originated from a lower density of thermally activated defects in the analyses of thermal quenching of the integrated intensity of photoluminescence (PL) spectra. TA further facilitates recrystallization forming more defect-free grains and then reduces strain and stress state causing a remarkable decrease of electron concentration and melioration of surface roughness.

GeSn is a promising material for the fabrication of on-chip photonic and nanoelectronic devices. Processing techniques dedicated to GeSn have thus been developed, including epitaxy, annealing, ion implantation, and etching. In this work, suspended, strain-relaxed, and high-quality GeSn microdisks are realized by a new approach without any etching to GeSn alloy. The GeSn alloy was grown on pre-patterned Ge (001) substrate by molecular beam epitaxy at low temperatures. The transmission electron microscopy and scanning electron microscopy were carried out to determine the microstructures of the GeSn samples. The microdisks with different diameters of Ge pedestals were fabricated by controlling the selective wet etching time, and micro-Raman results show that the microdisks with different dimensions of the remaining Ge pedestals have different extents of strain relaxation. The compressive strain of microdisks is almost completely relaxed under suitable conditions. The semiconductor processing technology presented in this work can be an alternative method to fabricate innovative GeSn and other materials based micro/nano-structures for a range of Si-compatible photonics, 3D-MOSFETs, and microelectromechanical device applications.

Two-dimensional (2D) superlattices composed of chemically heterogeneous transition-metal dichalcogenides (TMDs) have been proposed as key components in next-generation optoelectronic devices. For potential applications, coherent, defect-free compositional interfaces are usually required. In this paper, a combination of scaling theory and numerical analysis is employed to investigate strain relaxation mechanisms in misfitting, chemically heterogeneous TMDs. We demonstrate that, in free-standing superlattices, wrinkling of the monolayer is asymptotically preferred over misfit dislocation formation in both binary and ternary superlattices. For substrate-supported monolayers, however, misfit dislocation formation is thermodynamically favored above a critical superlattice width, implying the presence of an upper limit to the thermodynamic stability of coherent, misfitting 2D superlattices. Finally, it is shown numerically that the critical superlattice width is only weakly dependent on the misfit.

Van der Waals (vdW) epitaxy allows the fabrication of various heterostructures with dramatically released lattice matching conditions. This study demonstrates interface-driven stacking boundaries in WS 2 using epitaxially grown tungsten disulfide (WS 2 ) on wrinkled graphene. Graphene wrinkles function as highly reactive nucleation sites on WS 2 epilayers; however, they impede lateral growth and induce additional stress in the epilayer due to anisotropic friction. Moreover, partial dislocation-driven in-plane strain facilitates out-of-plane buckling with a height of 1 nm to release in-plane strain. Remarkably, in-plane strain relaxation at partial dislocations restores the bandgap to that of monolayer WS 2 due to reduced interlayer interaction. These findings clarify significant substrate morphology effects even in vdW epitaxy and are potentially useful for various applications involving modifying optical and electronic properties by manipulating extended 1D defects via substrate morphology control., (© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Strains in graphene play a significant role in graphene-based electronics, but many aspects of the grain boundary effects on strained graphene remain unclear. Here, the relationship between grain boundary and strain property of graphene grown by chemical vapor deposition (CVD) on the C-face of SiC substrate has been investigated by Raman spectroscopy. It is shown that abundant boundary-like defects exist in the graphene film and the blue-shifted 2D-band frequency, which results from compressive strain in graphene film, shifts downward linearly as 1/L a increases. Strain relaxation caused by grain boundary diffusion is considered to be the reason and the mechanism is analyzed in detail.

Strain usually exists in two-dimensional (2D) materials and devices, and its presence drastically modulates their properties. When 2D materials interface with noble metals, local strain and surface plasmon can couple at the metal-2D material boundaries, delivering a lot of intriguing phenomena. Current studies are mostly focused on the explanations of these strain-related phenomena based on a static point of view. Although strain can typically be relaxed in many environments, the time evolution of strain at metal-2D material interfaces remains largely unknown. In this work, we investigate the evolution of local strain at Ag-MoS 2 boundaries by surface-enhanced Raman scattering. With the split of MoS 2 Raman peaks as an indicator of local strain, it is found that the originally localized strain at Ag-MoS 2 boundaries evolves and relaxes with time into a delocalized strain in MoS 2 plane. The time to start the strain relaxation depends on the number of layers of MoS 2 flakes, suggesting that the relaxation may result from the mechanical instability of the interface between the topmost MoS 2 layer and the underlying materials. The relaxation occurs in a certain period of time, i.e., ∼70 days for 1L and ∼30 days for 3L. Accompanying the strain relaxation, surface sulfurization of Ag also occurs, a process that reduces the strength of locally enhanced electric field. Our results not only provide a deep understanding of strain evolution at metal-MoS 2 interfaces but also shed light on the optimization of MoS 2 -based device fabrications.

We present a comparative study of the morphology and structural as well as magnetic properties of crystalline Fe₃O₄/NiO bilayers grown on both MgO(001) and SrTiO₃(001) substrates by reactive molecular beam epitaxy. These structures were investigated by means of X-ray photoelectron spectroscopy, low-energy electron diffraction, X-ray reflectivity and diffraction, as well as vibrating sample magnetometry. While the lattice mismatch of NiO grown on MgO(001) was only 0.8%, it was exposed to a lateral lattice mismatch of &minus;6.9% if grown on SrTiO₃. In the case of Fe₃O₄, the misfit strain on MgO(001) and SrTiO₃(001) amounted to 0.3% and &minus;7.5%, respectively. To clarify the relaxation process of the bilayer system, the film thicknesses of the magnetite and nickel oxide films were varied between 5 and 20 nm. While NiO films were well ordered on both substrates, Fe₃O₄ films grown on NiO/SrTiO₃ exhibited a higher surface roughness as well as lower structural ordering compared to films grown on NiO/MgO. Further, NiO films grew pseudomorphic in the investigated thickness range on MgO substrates without any indication of relaxation, whereas on SrTiO₃ the NiO films showed strong strain relaxation. Fe₃O₄ films also exhibited strong relaxation, even for films of 5 nm thickness on both NiO/MgO and NiO/SrTiO₃. The magnetite layers on both substrates showed a fourfold magnetic in-plane anisotropy with magnetic easy axes pointing in 100 directions. The coercive field was strongly enhanced for magnetite grown on NiO/SrTiO₃ due to the higher density of structural defects, compared to magnetite grown on NiO/MgO.

Corrugation is a ubiquitous phenomenon for graphene grown on metal substrates by chemical vapor deposition, which greatly affects the electrical, mechanical, and chemical properties. Recent years have witnessed great progress in controlled growth of large graphene single crystals; however, the issue of surface roughness is far from being addressed. Here, the corrugation at the interface of copper (Cu) and graphene, including Cu step bunches (CuSB) and graphene wrinkles, are investigated and ascribed to the anisotropic strain relaxation. It is found that the corrugation is strongly dependent on Cu crystallographic orientations, specifically, the packed density and anisotropic atomic configuration. Dense Cu step bunches are prone to form on loose packed faces due to the instability of surface dynamics. On an anisotropic Cu crystal surface, Cu step bunches and graphene wrinkles are formed in two perpendicular directions to release the anisotropic interfacial stress, as revealed by morphology imaging and vibrational analysis. Cu(111) is a suitable crystal face for growth of ultraflat graphene with roughness as low as 0.20 nm. It is believed the findings will contribute to clarifying the interplay between graphene and Cu crystal faces, and reducing surface roughness of graphene by engineering the crystallographic orientation of Cu substrates., (© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Monolayer (1L) transition metal dichalcogenides (TMDCs) are promising materials for nanoscale optoelectronic devices because of their direct band gap and wide absorption range (ultraviolet to infrared). However, 1L-TMDCs cannot be easily utilized for practical optoelectronic device applications (e.g., photodetectors, solar cells, and light-emitting diodes) because of their extremely low optical quantum yields (QYs). In this investigation, a high-gain 1L-MoS 2 photodetector was successfully realized, based on the surface plasmon (SP) of the Ag nanowire (NW) network. Through systematic optical characterization of the hybrid structure consisting of a 1L-MoS 2 and the Ag NW network, it was determined that a strong SP and strain relaxation effect influenced a greatly enhanced optical QY. The photoluminescence (PL) emission was drastically increased by a factor of 560, and the main peak was shifted to the neutral exciton of 1L-MoS 2 . Consequently, the overall photocurrent of the hybrid 1L-MoS 2 photodetector was observed to be 250 times better than that of the pristine 1L-MoS 2 photodetector. In addition, the photoresponsivity and photodetectivity of the hybrid photodetector were effectively improved by a factor of ∼1000. This study provides a new approach for realizing highly efficient optoelectronic devices based on TMDCs.

In this study, the effect of reduced graphene oxide (rGO) on interconnected Co 3 O 4 nanosheets and the improved supercapacitive behaviors is reported. By optimizing the experimental parameters, we achieved a specific capacitance of ~1016.4 F g -1 for the Co 3 O 4 /rGO/NF (nickel foam) system at a current density of 1 A g -1 . However, the Co 3 O 4 /NF structure without rGO only delivers a specific capacitance of ~520.0 F g -1 at the same current density. The stability test demonstrates that Co 3 O 4 /rGO/NF retains ~95.5% of the initial capacitance value even after 3000 charge-discharge cycles at a high current density of 7 A g -1 . Further investigation reveals that capacitance improvement for the Co 3 O 4 /rGO/NF structure is mainly because of a higher specific surface area (~87.8 m 2  g -1 ) and a more optimal mesoporous size (4-15 nm) compared to the corresponding values of 67.1 m 2  g -1 and 6-25 nm, respectively, for the Co 3 O 4 /NF structure. rGO and the thinner Co 3 O 4 nanosheets benefit from the strain relaxation during the charge and discharge processes, improving the cycling stability of Co 3 O 4 /rGO/NF.

The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.

Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxation for subcritical thickness SLs is explained through the accumulation of Nagai tilt at each interface of the SL. Additional atomic force microscopy measurements reveal surface pit densities which appear to correlate with the amount of residual strain in the films along with the appearance of cracks for SLs which have exceeded the critical thickness for plastic relaxation. These results indicate a total SL thickness beyond which growth may be limited for the formation of high-quality coherent crystal structures; however, they may indicate a growth window for the reduction of threading dislocations by controlled relaxation of the epilayers.

The surface morphology of copper (Cu) often changes after the synthesis of graphene by chemical vapor deposition (CVD) on a Cu foil, which affects the electrical properties of graphene, as the Cu step bunches induce the periodic ripples on graphene that significantly disturb electrical conduction. However, the origin of the Cu surface reconstruction has not been completely understood yet. Here, we show that the compressive strain on graphene induced by the mismatch of thermal expansion coefficient with Cu surface can be released by forming periodic Cu step bunching that depends on graphene layers. Atomic force microscopy (AFM) images and the Raman analysis show the noticeably longer and higher step bunching of Cu surface under multilayer graphene and the weaker biaxial compressive strain on multilayer graphene compared to monolayer. We found that the surface areas of Cu step bunches under multilayer and monolayer graphene are increased by ∼1.41% and ∼0.77% compared to a flat surface, respectively, indicating that the compressive strain on multilayer graphene can be more effectively released by forming the Cu step bunching with larger area and longer periodicity. We believe that our finding on the strain relaxation of graphene layers by Cu step bunching formation would provide a crucial idea to enhance the electrical performance of graphene electrodes by controlling the ripple density of graphene.

Lattice-mismatched epitaxial films of La0.7Sr0.3MnO3 (LSMO) on LaAlO3 (001) substrates develop a crossed pattern of misfit dislocations above a critical thickness of 2.5 nm. Upon film thickness increases, the dislocation density progressively increases, and the dislocation spacing distribution becomes narrower. At a film thickness of 7.0 nm, the misfit dislocation density is close to the saturation for full relaxation. The misfit dislocation arrangement produces a 2D lateral periodic structure modulation (Λ ≈ 16 nm) alternating two differentiated phases: one phase fully coherent with the substrate and a fully relaxed phase. This modulation is confined to the interface region between film and substrate. This phase separation is clearly identified by X-ray diffraction and further proven in the macroscopic resistivity measurements as a combination of two transition temperatures (with low and high Tc). Films thicker than 7.0 nm show progressive relaxation, and their macroscopic resistivity becomes similar than that of the bulk material. Therefore, this study identifies the growth conditions and thickness ranges that facilitate the formation of laterally modulated nanocomposites with functional properties notably different from those of fully coherent or fully relaxed material.

Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading. Its validity is proven both experimentally and theoretically for the pivotal case of SiGe/Si(001)., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

The interplay of surface texture, strain relaxation, absorbance, grain size, and sheet resistance in textured, boron-doped ZnO (ZnO@B), transparent conductive oxide (TCO) materials of different thicknesses used for thin film, solar cell applications is investigated. The residual strain induced by the lattice mismatch and the difference in the thermal expansion coefficient for thicker ZnO@B is relaxed, leading to an increased surface texture, stronger absorbance, larger grain size, and lower sheet resistance. These experimental results reveal the optical and material characteristics of the TCO layer, which could be useful for enhancing the performance of solar cells through an optimized TCO layer.

Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of bandstructure engineering that is impossible in standard planar epitaxy. Nevertheless, the presence of strain and structural defects directly control the optoelectronic properties of these nanomaterials. Understanding with atomic accuracy how mismatched heterostructures release or accommodate strain, therefore, is highly desirable. By using atomic resolution high angle annular dark field scanning transmission electron microscopy combined with geometrical phase analyses and computer simulations, we are able to establish the relaxation mechanisms (including both elastic and plastic deformations) to release the mismatch strain in axial nanowire heterostructures. Formation of misfit dislocations, diffusion of atomic species, polarity transfer, and induced structural transformations are studied with atomic resolution at the intermediate ternary interfaces. Two nanowire heterostructure systems with promising applications (InAs/InSb and GaAs/GaSb) have been selected as key examples.