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In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol-gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of -1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of -0.45 V/+1.55 V presented a memory window larger than 10 3 , a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.

Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITO X :SiO 2 thin film resistive random access memory (RRAM) devices were observed and discussed. The ITO X :SiO 2 thin films were prepared using a co-sputtering deposition method on the TiN/Si substrate. For the RRAM device structure fabrication, an Al/ITO X :SiO 2 /TiN/Si structure was prepared by using aluminum for the top electrode and a TiN material for the bottom electrode. In addition, grain growth, defect reduction, and RRAM device performance of the ITO X :SiO 2 thin film for the various oxygen gas flow conditions were observed and described. Based on the I-V curve measurements of the RRAM devices, the turn on-off ratio and the bipolar resistance switching properties of the Al/ITO X :SiO 2 /TiN/Si RRAM devices in the set and reset states were also obtained. At low operating voltages and high resistance values, the conductance mechanism exhibits hopping conduction mechanisms for set states. Moreover, at high operating voltages, the conductance mechanism behaves as an ohmic conduction current mechanism. Finally, the Al/ITO X :SiO 2 /TiN/Si RRAM devices demonstrated memory window properties, bipolar resistance switching behavior, and nonvolatile characteristics for next-generation nonvolatile memory applications.

In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of I-V switching curves, the first order rate law behaviors of the reset state between the resistant variety properties and the reaction time were observed. To verify the decay reaction mechanism in the reset state, vanadium oxide thin films from RRAM devices were measured by different constant voltage sampling and exhibited the same decay reaction rate constant. Finally, the electrical conduction transfer mechanism and metallic filament forming model described by I-V switching properties of the RRAM devices were proven and investigated.

In this study, we describe composited perovskite films based on the doping of lead cesium triiodide (CsPbI 3 ) quantum dots (QDs) into methylammonium lead iodide (MAPbI 3 ). CsPbI 3 QDs and MAPbI 3 were prepared by ligand-assisted re-precipitation and solution mixing, respectively. These films were optimized by oxygen plasma treatment, and the effect of powers from 0 to 80 W on the structural properties of the composited perovskite films is discussed. The experimental results showed that the light-harvesting ability of the films was enhanced at 20 W. The formation of the metastable state (lead(II) oxide and lead tetroxide) was demonstrated by peak differentiation-imitating. A low power enhanced the quality of the films due to the removal of organic impurities, whereas a high power caused surface damage in the films owing to the severe degradation of MAPbI 3 .

Alcoholic liver injury represents a progressive process with a range of consequences including hepatic steatosis, steatohepatitis, liver fibrosis, cirrhosis, and hepatocellular carcinoma. Targeting key molecular regulators involved in the development of alcoholic liver injury may be of great value in the prevention of liver injury. Peroxisome proliferator-activated receptor α (PPARα) plays a pivotal role in modulation of hepatic lipid metabolism, oxidative stress, inflammatory response and fibrogenesis. As such, PPARα may be a potential therapeutic target for the treatment of alcoholic liver disease.

The purpose of this study is to reduce the glass substrate reflectivity over a wide spectral range (400-1200 nm) without having high reflectivity in the near-infrared region. After making porous SiO₂/MgF₂ double-layer antireflection (DLAR) thin film structure, the superstrate-type silicon-based tandem cells are added. In comparison to having only silicon-based tandem solar cells, the short-circuit current density has improved by 6.82% when porous SiO₂/MgF₂ DLAR thin film is applied to silicon-based tandem solar cells. This study has demonstrated that porous SiO₂/MgF₂ DLAR thin film structure provides antireflection properties over a broad spectral range (400-1200 nm) without having high reflectivity at near-infrared wavelengths.