Search

In this communication, a novel CdSe/CdS/ZnO nanowire array fabricated by a 3-step solution-based method was used as a photoanode of a quantum dot sensitized solar cell, which generated a maximum power conversion efficiency of 4.15%.

ZnO nanowire-CdO composite nanostructures were fabricated by a simple two-step process involving ammonia solution method and thermal evaporation. First, ZnO nanowires (NWs) were grown on Si substrate by aqueous ammonia solution method and then CdO was deposited on these ZnO NWs by thermal evaporation of cadmium chloride powder. The surface morphology and structure of the synthesized composite structures were analyzed by scanning electron microscopy, X-ray diffraction and transmission electron microscopy. The optical absorbance spectrum showed that ZnO NW-CdO composites can absorb light up to 550 nm. The photoluminescence spectrum of the composite structure does not show any CdO-related emission peak and also there was no band gap modification of ZnO due to CdO. The photocurrent measurements showed that ZnO NW-CdO composite structures have better photocurrent when compared with the bare ZnO NWs.

We report a two-step, solution-based synthetic method to fabricate CdS nanoparticles-sensitized ZnO nanowire heterostructure arrays which showed enhanced photocatalytic activities in comparison with bare ZnO nanowire arrays.

High density and vertically well-aligned ZnO nanoneedle arrays were fabricated on the ZnO thin film deposited on silicon substrates. The ZnO buffer layer and nanoneedles were synthesized by metal organic chemical vapor deposition using diethylzinc and oxygen gas. The ZnO buffer film was grown at 250 degrees C and the growth temperature of nanoneedles was in the range of 480-500 degrees C. As-grown ZnO nanoneedles showed single crystalline structure of ZnO (002). The crystalline properties of three samples (A: as-deposited ZnO buffer layer, B: annealed buffer film, C: ZnO nanoneedles) were compared using XRD and Raman spectroscopy. The synthesized ZnO nanoneedles (sample C) showed highest crystalline quality among three samples. The field emission properties of ZnO nanoneedles were investigated, which showed low turn on field of 4.8 Vmicrom(-1) and high field enhancement factor of 3.2 x 103.

A simple method of synthesizing nanomaterials and the ability to control the size and position of them are crucial for fabricating nanodevices. In this work, we developed a novel ammonia aqueous solution method for growing well-aligned ZnO nanorod arrays on a silicon substrate. For ZnO nanorod growth, a thin zinc metal seed layer was deposited on a silicon substrate by thermal evaporation. Uniform ZnO nanorods were grown on the zinc-coated silicon substrate in aqueous solution containing zinc nitrate and ammonia water. The growth temperature was as low as 60-90 degrees C and a 4-in. wafer size scale up was possible. The morphology of a zinc metal seed layer, pH, growth temperature, and concentration of zinc salt in aqueous solution were important parameters to determine growth characteristics such as average diameters and lengths of ZnO nanorods. We could demonstrate the discrete controlled growth of ZnO nanorods using sequential, tailored growth steps. By combining our novel solution method and general photolithography, we selectively grew ZnO nanorod arrays on a patterned silicon substrate. Our concepts on controlled ZnO nanorod growth using a simple solution method would be applicable for various nanodevice fabrications.

A simple, direct synthesis method was used to grow core-shell SiC-SiO(2) nanowires by heating NiO-catalysed silicon substrates. A carbothermal reduction of WO(3) provided a reductive environment and carbon source to synthesize crystalline SiC nanowires covered with SiO(2) sheaths at the growth temperature of 1000-1100 °C. Transmission electron microscopy showed that the SiC core was 15-25 nm in diameter and the SiO(2) shell layer was an average of 20 nm in thickness. The thickness of the SiO(2) shell layer could be controlled using hydrofluoric acid (HF) etching. Field emission results of core-shell SiC-SiO(2) and bare SiC nanowires showed that the SiC nanowires coated with an optimum SiO(2) thickness (10 nm) have a higher field emission current than the bare SiC nanowires.