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In a 2D electron system (2DES) the breaking of the inversion, time-reversal and bulk crystal-field symmetries is interlaced with the effects of spin-orbit coupling (SOC) triggering exotic quantum phenomena. Here, epitaxial engineering is used to design and realize a 2DES characterized simultaneously by ferromagnetic order, large Rashba SOC and hexagonal band warping at the (111) interfaces between LaAlO 3 , EuTiO 3 , and SrTiO 3 insulators. The 2DES displays anomalous quantum corrections to the magneto-conductance driven by the time-reversal-symmetry breaking occurring below the magnetic transition temperature. The results are explained by the emergence of a non-trivial Berry phase and competing weak anti-localization/weak localization back-scattering of Dirac-like fermions, mimicking the phenomenology of gapped topological insulators. These findings open perspectives for the engineering of novel spin-polarized functional 2DES holding promises in spin-orbitronics and topological electronics., (© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.)

We report on the effects of visible light on the low temperature electronic properties of the spin-polarized two dimensional electron system (2DES) formed at the interfaces between LaAlO[Formula: see text], EuTiO[Formula: see text] and (001) SrTiO[Formula: see text]. A strong, persistent modulation of both longitudinal and transverse conductivity was obtained using light emitting diodes (LEDs) with emissions at different wavelengths in the visible spectrum range. In particular, Hall effect data show that visible light induces a non-volatile electron filling of bands with mainly 3d[Formula: see text] character, and at the same time an enhancement of the anomalous Hall effect associated to the magnetic properties of the system. Accordingly, a suppression of the weak-anti localization corrections to the magneto-conductance is found, which correlates with an enhancement of the spin-polarization and of the ferromagnetic character of 2DES. The results establish the LED-induced photo-doping as a viable route for the control of the ground state properties of artificial spin-polarized oxide 2DES., (© 2023. The Author(s).)

Current trends in data processing have given impetus for an intense search of new concepts of memory devices with emphasis on efficiency, speed, and scalability. A promising new approach to memory storage is based on resistance switching between charge-ordered domain states in the layered dichalcogenide 1T-TaS 2 . Here we investigate the energy efficiency scaling of such charge configuration memory (CCM) devices as a function of device size and data write time τ W as well as other parameters that have bearing on efficient device operation. We find that switching energy efficiency scales approximately linearly with both quantities over multiple decades, departing from linearity only when τ W approaches the ∼0.5 ps intrinsic switching limit. Compared to current state of the art memory devices, CCM devices are found to be much faster and significantly more energy efficient, demonstrated here with two-terminal switching using 2.2 fJ, 16 ps electrical pulses.

We present a 'top-down' patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors., (Creative Commons Attribution license.)

Superconductors are essential in many present and future technologies, from large-scale devices for medical imaging, accelerators, or fusion experiments to ultra-low-power superconducting electronics. However, their potential applicability, and particularly that of high-temperature superconductors (HTS), is severely affected by limited performances at large magnetic fields and high temperatures, where their use is most needed. One of the main reasons for these limitations is the presence of quantized vortices, whose movements result in losses, internal noise, and reduced performances. The conventional strategy to overcome the flow of vortices is to pin them along artificial defects. Here, we theoretically and experimentally demonstrate that critical-current density in high-temperature superconductors can reach unprecedented high values at high fields and temperatures by preventing vortex entry. By tailoring the geometry, that is, reducing the width, W, of nanowire-patterned HTS films, the range of the Meissner state, for which no vortices are present, is extended up to very large applied field values, on the order of ∼1 T. Current densities on the order of the depairing current can be sustained under high fields for a wide range of temperatures. Results may be relevant both for devising new conductors carrying depairing-current values at high temperatures and large magnetic fields and for reducing flux noise in sensors and quantum systems.

High-resolution focused ion beam lithography has been used to fabricate YBa₂Cu₃O 7-x (YBCO) wires with nanometric lateral dimensions. In the present work, we investigate Flux-flow instabilities in nanowires of different widths, showing sudden voltage switching jumps from the superconducting to the normal state. We present an extensive study on the temperature and field dependence of the switching characteristics which reveal that voltage jumps become less abrupt as the temperature increases, and disappear at the vortex-liquid state. On the contrary, the current distribution at the critical point becomes narrower at high temperatures. Sharp voltage switchings very close to the critical current density can be obtained by reducing the width of the nanowires, making them very appealing for practical applications., Competing Interests: The authors declare no conflict of interest.

Since the discovery of high-temperature superconductors (HTSs), most efforts of researchers have been focused on the fabrication of superconducting devices capable of immobilizing vortices, hence of operating at enhanced temperatures and magnetic fields. Recent findings that geometric restrictions may induce self-arresting hypervortices recovering the dissipation-free state at high fields and temperatures made superconducting strips a mainstream of superconductivity studies. Here we report on the geometrical melting of the vortex lattice in a wide YBCO submicron bridge preceded by magnetoresistance (MR) oscillations fingerprinting the underlying regular vortex structure. Combined magnetoresistance measurements and numerical simulations unambiguously relate the resistance oscillations to the penetration of vortex rows with intermediate geometrical pinning and uncover the details of geometrical melting. Our findings offer a reliable and reproducible pathway for controlling vortices in geometrically restricted nanodevices and introduce a novel technique of geometrical spectroscopy, inferring detailed information of the structure of the vortex system through a combined use of MR curves and large-scale simulations.

Advances in growth technology of oxide materials allow single atomic layer control of heterostructures. In particular delta doping, a key materials' engineering tool in today's semiconductor technology, is now also available for oxides. Here we show that a fully electric-field-tunable spin-polarized and superconducting quasi-2D electron system (q2DES) can be artificially created by inserting a few unit cells of delta doping EuTiO3 at the interface between LaAlO3 and SrTiO3 oxides. Spin polarization emerges below the ferromagnetic transition temperature of the EuTiO3 layer (TFM = 6-8 K) and is due to the exchange interaction between the magnetic moments of Eu-4f and of Ti-3d electrons. Moreover, in a large region of the phase diagram, superconductivity sets in from a ferromagnetic normal state. The occurrence of magnetic interactions, superconductivity and spin-orbit coupling in the same q2DES makes the LaAlO3/EuTiO3/SrTiO3 system an intriguing platform for the emergence of novel quantum phases in low-dimensional materials.

We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis, which allows one to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence disorder and the orientation of the Rashba vector. The relevance of this approach in view of the implementation of hybrid Josephson junctions based on semiconducting nanowires coupled with high-temperature superconductors is discussed.

Possible ferromagnetism induced in otherwise nonmagnetic materials has been motivating intense research in complex oxide heterostructures. Here we show that a confined magnetism is realized at the interface between SrTiO3 and two insulating polar oxides, BiMnO3 and LaAlO3. By using polarization dependent x-ray absorption spectroscopy, we find that in both cases the magnetism can be stabilized by a negative exchange interaction between the electrons transferred to the interface and local magnetic moments. These local magnetic moments are associated with magnetic Ti3+ ions at the interface itself for LaAlO3/SrTiO3 and to Mn3+ ions in the overlayer for BiMnO3/SrTiO3. In LaAlO3/SrTiO3 the induced magnetism is quenched by annealing in oxygen, suggesting a decisive role of oxygen vacancies in this phenomenon.

Dissipation encodes the interaction of a quantum system with the environment and regulates the activation regimes of a Brownian particle. We have engineered grain boundary biepitaxial YBaCuO junctions to drive a direct transition from a quantum activated running state to a phase diffusion regime. The crossover to the quantum regime is tuned by the magnetic field and dissipation is described by a fully consistent set of junction parameters. To unravel phase dynamics in moderately damped systems is of general interest for advances in the comprehension of retrapping phenomena and in view of quantum hybrid technology.

Self-assembled YBaCuO diffusive grain boundary submicron Josephson junctions offer a realization of a special regime of the proximity effect, where normal state coherence prevails on the superconducting coherence in the barrier region. Resistance oscillations from the current-voltage characteristic encode mesoscopic information on the junction and more specifically on the minigap induced in the barrier. Their persistence at large voltages is evidence of the long lifetime of the antinodal (high energy) quasiparticles.

The metal-insulator transition (MIT) has been studied in Ba(0.9)Nd(0.1)CuO(2+x)/CaCuO2 ultrathin cuprate structures. Such structures allow for the direct measurement of the 2D sheet resistance R( square), eliminating ambiguity in the definition of the effective thickness of the conducting layer in high temperature superconductors. The MIT occurs at room temperature for experimental values of R(square) close to the 25.8 kOmega universal quantum resistance. All data confirm the assumption that each CaCuO2 layer forms a 2D superconducting sheet within the superconducting block, which can be described as weak-coupled equivalent sheets in parallel.