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Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co 1/3 NbS 2 , the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up an avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals., Competing Interests: Competing interests statement:The authors declare no competing interest.

We combine synchrotron-based infrared absorption and Raman scattering spectroscopies with diamond anvil cell techniques and first-principles calculations to explore the properties of hafnia under compression. We find that pressure drives HfO[Formula: see text]:7%Y from the mixed monoclinic ([Formula: see text]) [Formula: see text] antipolar orthorhombic ([Formula: see text]) phase to pure antipolar orthorhombic ([Formula: see text]) phase at approximately 6.3 GPa. This transformation is irreversible, meaning that upon release, the material is kinetically trapped in the [Formula: see text] metastable state at 300 K. Compression also drives polar orthorhombic ([Formula: see text]) hafnia into the tetragonal ([Formula: see text]) phase, although the latter is not metastable upon release. These results are unified by an analysis of the energy landscape. The fact that pressure allows us to stabilize targeted metastable structures with less Y stabilizer is important to preserving the flat phonon band physics of pure HfO[Formula: see text]., Competing Interests: Competing interests statement:The authors declare no competing interest.

Twisted bilayer graphene exhibits electronic properties strongly correlated with the size and arrangement of moiré patterns. While rigid rotation of the two graphene layers results in a moiré interference pattern, local rearrangements of atoms due to interlayer van der Waals interactions result in atomic reconstruction within the moiré cells. Manipulating these patterns by controlling the twist angle and externally applied strain provides a promising route to tuning their properties. Atomic reconstruction has been extensively studied for angles close to or smaller than the magic angle (θ m = 1.1°). However, this effect has not been explored for applied strain and is believed to be negligible for high twist angles. Using interpretive and fundamental physical measurements, we use theoretical and numerical analyses to resolve atomic reconstruction in angles above θ m . In addition, we propose a method to identify local regions within moiré cells and track their evolution with strain for a range of representative high twist angles. Our results show that atomic reconstruction is actively present beyond the magic angle, and its contribution to the moiré cell evolution is significant. Our theoretical method to correlate local and global phonon behavior further validates the role of reconstruction at higher angles. Our findings provide a better understanding of moiré reconstruction in large twist angles and the evolution of moiré cells under the application of strain, which might be potentially crucial for twistronics-based applications., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)

HfO 2 , a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc2 1 ) form in ultrathin films regarded as the plausible cause of ferroelectricity but thought not to be attainable in bulk crystals. Here, using a state-of-the-art laser-diode-heated floating zone technique, we report the Pbc2 1 phase and ferroelectricity in bulk single-crystalline HfO 2 :Y as well as the presence of the antipolar Pbca phase at different Y concentrations. Neutron diffraction and atomic imaging demonstrate (anti)polar crystallographic signatures and abundant 90°/180° ferroelectric domains in addition to switchable polarization with negligible wake-up effects. Density-functional-theory calculations indicate that the yttrium doping and rapid cooling are the key factors for stabilization of the desired phase in bulk. Our observations provide insights into the polymorphic nature and phase control of HfO 2 , remove the upper size limit for ferroelectricity and suggest directions towards next-generation ferroelectric devices.

Complementary to bulk synthesis, here we propose a designer lattice with extremely high magnetic frustration and demonstrate the possible realization of a quantum spin liquid state from both experiments and theoretical calculations. In an ultrathin (111) CoCr 2 O 4 slice composed of three triangular and one kagome cation planes, the absence of a spin ordering or freezing transition is demonstrated down to 0.03 K, in the presence of strong antiferromagnetic correlations in the energy scale of 30 K between Co and Cr sublattices, leading to the frustration factor of ∼1000. Persisting spin fluctuations are observed at low temperatures via low-energy muon spin relaxation. Our calculations further demonstrate the emergence of highly degenerate magnetic ground states at the 0 K limit, due to the competition among multiply altered exchange interactions. These results collectively indicate the realization of a proximate quantum spin liquid state on the synthetic lattice.

We report the electronic structure and magnetic properties of Co 2 Ti 1- x Ge x O 4 (0 ⩽ x ⩽ 1) spinel by means of the first-principle methods of density functional theory involving generalized gradient approximation along with the on-site Coulomb interaction ( U eff ) in the exchange-correlation energy functional. Special emphasis has been given to explore the site occupancy of Ge atoms in the spinel lattice by introducing the cationic disorder parameter ( y ) which is done in such a way that one can tailor the pyrochlore geometry and determine the electronic/magnetic structure quantitatively. For all the compositions ( x ), the system exhibits weak tetragonal distortion ( c / a ≠ 1) due to the non-degeneratedz2anddx2-y2states ( e g orbitals) of the B-site Co. We observe large exchange splitting (Δ EX ∼ 9 eV) between the up and down spin bands of t 2 g and e g states, respectively, of tetrahedral and octahedral Co 2+ ( 4 A 2( g ) (F)) and moderate crystal-field splitting (Δ CF ∼ 4 eV) and the Jahn-Teller distortion (Δ JT ∼ 0.9 eV). These features indicate the strong intra-atomic interaction which is also responsible for the alteration of energy band-gap (1.7 eV ⩽ E g ⩽ 3.3 eV). The exchange interaction ( J BB ∼ -4.8 meV, for ( x , y ) = (0.25, 0)) between the Co 2+ dominates the overall antiferromagnetic behaviour of the system for all ' x ' as compared to J AA (∼-2.2 meV, for ( x , y ) = (0.25, 0)) and J AB (∼-1.8 meV, for ( x , y ) = (0.25, 0)). For all the compositions without any disorderness in the system, the net ferrimagnetic moment (Δ μ ) remains constant, however, increases progressively with increasing x due to the imbalance of Co spins between the A- and B-sites., (© 2021 IOP Publishing Ltd.)

Hafnia (HfO_{2})-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. Identifying and stabilizing the ferroelectric phases of HfO_{2} have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO_{2} are used to discover that imposing an in-plane shear strain on the metastable tetragonal phase drives it to a polar phase. This in-plane-shear-induced polar phase is shown to be an epitaxial-strain-induced distortion of a previously proposed metastable ferroelectric Pnm2_{1} phase of HfO_{2}. This ferroelectric Pnm2_{1} phase can account for the recently observed ferroelectricity in (111)-oriented HfO_{2}-based thin films on a SrTiO_{3} (STO) (001) substrate [Nat. Mater. 17, 1095 (2018)NMAACR1476-112210.1038/s41563-018-0196-0]. Further investigation of this alternative ferroelectric phase of HfO_{2} could potentially improve the performances of HfO_{2}-based films in logic and memory devices.

MoTe_{2} has recently attracted much attention due to the observation of pressure-induced superconductivity, exotic topological phase transitions, and nonlinear quantum effects. However, there has been debate on the intriguing structural phase transitions among various observed phases of MoTe_{2} and their connection to the underlying topological electronic properties. In this work, by means of density-functional theory calculations, we investigate the structural phase transition between the polar T_{d} and nonpolar 1T^{'} phases of MoTe_{2} in reference to a hypothetical high-symmetry T_{0} phase that exhibits higher-order topological features. In the T_{d} phase we obtain a total of 12 Weyl points, which can be created/annihilated, dynamically manipulated, and switched by tuning a polar phonon mode. We also report the existence of a tunable nonlinear Hall effect in T_{d}-MoTe_{2} and propose the use of this effect as a probe for the detection of polarity orientation in polar (semi)metals. By studying the role of dimensionality, we identify a configuration in which a nonlinear surface response current emerges. The potential technological applications of the tunable Weyl phase and the nonlinear Hall effect are discussed.

We report on the emergent magnetic state of (111)-oriented CoCr 2 O 4 ultrathin films sandwiched between Al 2 O 3 spacer layers in a quantum confined geometry. At the two-dimensional crossover, polarized neutron reflectometry reveals an anomalous enhancement of the total magnetization compared to the bulk value. Synchrotron X-ray magnetic circular dichroism measurements demonstrate the appearance of a long-range ferromagnetic ordering of spins on both Co and Cr sublattices. Brillouin function analyses and ab-initio density functional theory calculations further corroborate that the observed phenomena are due to the strongly altered magnetic frustration invoked by quantum confinement effects, manifested by the onset of a Yafet-Kittel-type ordering as the magnetic ground state in the ultrathin limit, which is unattainable in the bulk.

We employ an ab-initio structure search algorithm to explore the configurational space of bismuth in quasi-two dimensions. A confinement potential is introduced to restrict the movement of atoms within a predefined thickness to find the stable and metastable forms of monolayer Bi. In addition to the two known low-energy structures (puckered monoclinic and buckled hexagonal), our calculations predict three new phases: α, β, and γ. Each phase exhibits peculiar electronic properties, ranging from metallic (α and γ) to semiconducting (puckered monoclinic, buckled hexagonal, and β) monolayers. Topologically nontrivial features are predicted for buckled hexagonal and γ phases. We also remark on the role of 5d electrons on the electronic properties of Bi monolayer. We conclude that Bi provides a rich playground to study distortion-mediated metal-insulator phase transitions in quasi-2D.

Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl semimetals with broken inversion or time-reversal symmetry can provide a hunting ground for exploring topological interfacial states, such investigations have received little attention to date. Here, utilizing in-situ cryogenic transmission electron microscopy combined with first-principles calculations, we discover intriguing domain-wall structures in MoTe 2 , both between polar variants of the low-temperature(T) Weyl phase, and between this and the high-T higher-order topological phase. We demonstrate how polar domain walls can be manipulated with electron beams and show that phase domain walls tend to form superlattice-like structures along the c axis. Scanning tunneling microscopy indicates a possible signature of a conducting hinge state at phase domain walls. Our results open avenues for investigating topological interfacial states and unveiling multifunctional aspects of domain walls in topological materials.

Aspects of the optoelectronic performance of thin-film ferromagnetic materials are evaluated for application in ultrafast devices. Dynamics of photocarriers and their associated spin polarization are measured using transient reflectivity (TR) measurements in cross linear and circular polarization configurations for La 0.7 Sr 0.3 MnO 3 films with a range of thicknesses. Three spin-related recombination mechanisms have been observed for thicker films (thickness of d ≥ 20 nm) at different time regimes (τ), which are attributed to the electron-phonon recombination (τ < 1 ps), phonon-assisted spin-lattice recombination (τ ∼ 100 ps), and thermal diffusion and radiative recombination (τ > 1 ns). Density functional theory (DFT+U) based first-principles calculations provide information about the nature of the optical transitions and their probabilities for the majority and the minority spin channels. These transitions are partly responsible for the aforementioned recombination mechanisms, identified through the comparison of linear and circular TR measurements. The same sets of measurements for thinner films (4.4 nm ≤ d < 20 nm) revealed an additional relaxation dynamic (τ ∼ 10 ps), which is attributed to the enhanced surface recombination of charge carriers. Our DFT+U calculations further corroborate this observation, indicating an increase in the surface density of states with decreasing film thickness which results in higher amplitude and smaller time constant for surface recombination as the film thickness decreases.

The Mn valence in thin film La 0.7 Sr 0.3 MnO 3 was studied as a function of film thickness in the range of 1-16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn 3.7+ , whereas the interface valence reduces down to Mn 2.5+ . The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality.

Reported here are the results and their analysis from our detailed investigations of the effects of Cu doping ([Formula: see text]) on the electronic structure and magnetic properties of the spinel [Formula: see text]O 4 . A detailed comparison is given for the [Formula: see text] and [Formula: see text] cases for both the bulk-like samples and nanoparticles. The electronic structure determined from x-ray photoelectron spectroscopy and Rietveld analysis of x-ray diffraction patterns shows the structure to be: ([Formula: see text]) A [Formula: see text] [Formula: see text] [Formula: see text]] B [Formula: see text] i.e. [Formula: see text] substitutes for [Formula: see text] on the octahedral B-sites. For the bulk samples, the ferrimagnetic [Formula: see text] K for [Formula: see text] is lowered to [Formula: see text] K for the [Formula: see text] sample, this decrease being due to the effect of Cu doping. For the nanosize [Formula: see text] ([Formula: see text]) sample, the lower [Formula: see text] K ([Formula: see text] K) is observed using [Formula: see text] analysis, this lowering being due to finite size effects. For [Formula: see text], fits of dc paramagnetic susceptibility data of [Formula: see text] versus T in nanosize samples to the Néel expression are used to determine the exchange interactions between the A and B sites with exchange constants: [Formula: see text] K (4.1 K), [Formula: see text] K (16.3 K) and [Formula: see text] K (13.8 K) for [Formula: see text]. The temperature dependence of ac susceptibilities [Formula: see text] and [Formula: see text] at different frequencies shows that in bulk samples of [Formula: see text] and [Formula: see text], the transition at T C is the normal second order transition. But for the nanosize [Formula: see text] and 0.2 samples, analysis of the ac susceptibilities shows that the ferrimagnetic transition at T C is followed by a re-entrant spin-glass transition at lower temperatures [Formula: see text] K (138 K) for [Formula: see text] ([Formula: see text]). Analysis of the ac susceptibilities, [Formula: see text] and [Formula: see text], versus T data is done in terms of two scaling laws: (i) Vogel-Fulcher law [Formula: see text] [Formula: see text]; and (ii) power law of critical slowing-down [Formula: see text]. These fits confirm the existence of glassy behavior below T SG with the parameters [Formula: see text] (8.91), [Formula: see text] (9.6  ×  10[Formula: see text]) and [Formula: see text] K (∼138 K) for the samples [Formula: see text] (0.2), with similar results obtained for other samples. The linear behavior of the peak maximum in [Formula: see text] versus [Formula: see text] (AT-line) further supports the existence of glassy states in nanosize samples. For [Formula: see text], the temperature and composition dependence of the hysteresis loop parameters are investigated; all the samples with x  ⩾  0.1 have the coercivity H C and remanence [Formula: see text]. Since the results reported here in these nanostructures are significantly different from those in bulk [Formula: see text] [Formula: see text], further investigations of their magnetic structures using neutron diffraction are warranted.

The electronic, magnetic and optical properties of lanthanide substitutional doping (∼2% concentration) on the MoS 2 monolayer have been investigated within the density functional theory formalism together with the Hubbard correction (DFT+U). The dopants investigated include Ce, Eu, Gd, Lu and Tm. The calculated dopant substitutional energies under both Mo-rich and S-rich conditions suggest that it is possible to experimentally realize the lanthanide doped MoS 2 monolayer systems. The Eu, Gd and Tm dopants induce strong magnetization in the host lattice. The electronic structure calculations reveal that the dopants have a p-type character and they exhibit a half-metallic behavior in the Gd and Eu doped systems. A dilute magnetic semiconducting behavior can also be realized in Gd, Eu and Tm doped systems by slightly tuning the Fermi level. All the dopants refine the optical responses of the host system with the onset of the optical absorption edge shifting to lower energies within the visible range (red shift phenomenon). We observe an optical anisotropy for two different directions of the electric field (E) polarizations, i.e. parallel, E∥, and perpendicular, E⊥, to the xy-plane. Lanthanide substitutional doping significantly influences the electron energy loss spectra (EELS), absorption spectra, and dielectric properties of the host MoS 2 monolayer. Furthermore, we notice that lanthanide substitutional doping could enhance the photocatalytic properties of the MoS 2 monolayer.

Semi-conducting alloys Bi x Sb 1-x have emerged as a potential candidate for topological insulators and are well known for their novel thermoelectric properties. In this work, we present a systematic study of the low-energy phases of 35 different compositions of Bi x Sb 1-x (0 < x < 1) at zero temperature and zero pressure. We explore the potential energy surface of Bi x Sb 1-x as a function of Sb concentration by using the ab initio minima hopping structural search method. Even though Bi and Sb crystallize in the same R3[combining macron]m space group, our calculations indicate that Bi x Sb 1-x alloys can have several other thermodynamically stable crystal structures. In addition to the configurations on the convex hull, we find a large number of metastable structures which are dynamically stable. The electronic band structure calculations of several stable phases reveal the presence of strong spin-orbit interaction leading to the Rashba-Dresselhaus spin-splitting of bands which is of great interest for spintronics applications. We also find an orthorhombic structure of BiSb in the Imm2 space group which exhibits signatures of type-II Weyl semimetal. Additionally, we have studied the thermoelectric properties of the selected structures. Regarding thermoelectric properties, we find that the compositions which crystallize in the rhombohedral structure exhibit values of the Seebeck coefficient and the power factor similar to that of Bi 2 Te 3 at room temperature, while the theoretical maximum figure of merit (Z e T) is smaller than that of Bi 2 Te 3 . We observe enhancement in the thermopower with the increase in the strength of the Rashba-Dresselhaus spin-splitting effect.