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Programmable photonic integrated circuits (PICs) are an increasingly important platform in optical science and engineering. However, current programmable PICs are mostly formed through subtractive fabrication techniques, which limits the reconfigurability of the device and makes prototyping costly and time-consuming. A rewritable PIC architecture can circumvent these drawbacks, where PICs are repeatedly written and erased on a single PIC canvas. We demonstrate such a rewritable PIC platform by selective laser writing a layer of wide-band-gap phase change material (PCM) Sb 2 S 3 with a low-cost benchtop setup. We show arbitrary patterning with resolution up to 300 nm and write dielectric assisted waveguides with a low optical loss of 0.0172 dB/μm. We envision that using this inexpensive benchtop platform thousands of PIC designs can be written, tested, and erased on the same chip without the need for lithography/etching tools or a nanofabrication facility, thus reducing manufacturing cost and increasing accessibility.

Complimentary metal-oxide semiconductor (CMOS) integration of quantum technology provides a route to manufacture at volume, simplify assembly, reduce footprint, and increase performance. Quantum noise-limited homodyne detectors have applications across quantum technologies, and they comprise photonics and electronics. Here, we report a quantum noise-limited monolithic electronic-photonic integrated homodyne detector, with a footprint of 80 micrometers by 220 micrometers, fabricated in a 250-nanometer lithography bipolar CMOS process. We measure a 15.3-gigahertz 3-decibel bandwidth with a maximum shot noise clearance of 12 decibels and shot noise clearance out to 26.5 gigahertz, when measured with a 9-decibel-milliwatt power local oscillator. This performance is enabled by monolithic electronic-photonic integration, which goes below the capacitance limits of devices made up of separate integrated chips or discrete components. It exceeds the bandwidth of quantum detectors with macroscopic electronic interconnects, including wire and flip chip bonding. This demonstrates electronic-photonic integration enhancing quantum photonic device performance.

Mass-deployable implementations for quantum communication require compact, reliable, and low-cost hardware solutions for photon generation, control and analysis. We present a fiber-pigtailed hybrid photonic circuit comprising nonlinear waveguides for photon-pair generation and a polymer interposer reaching 68 dB of pump suppression and photon separation based on a polarizing beam splitter with > 25 dB polarization extinction ratio. The optical stability of the hybrid assembly enhances the quality of the entanglement, and the efficient background suppression and photon routing further reduce accidental coincidences. We thus achieve a 96 - 8 + 3 % concurrence and a 96 - 5 + 2 % fidelity to a Bell state. The generated telecom-wavelength, time-bin entangled photon pairs are ideally suited for distributing Bell pairs over fiber networks with low dispersion., (© 2024. The Author(s).)

Reinforcement learning (RL) stands as one of the three fundamental paradigms within machine learning and has made a substantial leap to build general-purpose learning systems. However, using traditional electrical computers to simulate agent-environment interactions in RL models consumes tremendous computing resources, posing a significant challenge to the efficiency of RL. Here, we propose a universal framework that utilizes a photonic integrated circuit (PIC) to simulate the interactions in RL for improving the algorithm efficiency. High parallelism and precision on-chip optical interaction calculations are implemented with the assistance of link calibration in the hybrid architecture PIC. By introducing similarity information into the reward function of the RL model, PIC-RL successfully accomplishes perovskite materials synthesis task within a 3472-dimensional state space, resulting in a notable 56% improvement in efficiency. Our results validate the effectiveness of simulating RL algorithm interactions on the PIC platform, highlighting its potential to boost computing power in large-scale and sophisticated RL tasks., (© 2024. The Author(s).)

In many physical systems, the interaction with an open environment leads to energy dissipation and reduced coherence, making it challenging to control these systems effectively. In the context of wave phenomena, such lossy interactions can be specifically controlled to isolate the system, a condition known as a bound-state-in-continuum (BIC). Despite the recent advances in engineered BICs for photonic waveguiding, practical implementations are still largely polarization- and geometry-specific, and the underlying principles remain to be systematically explored. Here, we theoretically and experimentally study low loss BIC photonic waveguiding within a two-layer heterogeneous electro-optically active integrated photonic platform. We show that coupling to the slab wave continuum can be selectively suppressed for guided modes with different polarizations and spatial structure. We demonstrate a low-loss same-polarization quasi-BIC guided mode enabling a high extinction Mach-Zehnder electro-optic amplitude modulator within a single Si 3 N 4 ridge waveguide integrated with an extended LiNbO 3 slab layer. By elucidating the broad BIC waveguiding principles and demonstrating them in an industry-relevant photonic configuration, this work may inspire innovative approaches to photonic applications such as switching and filtering. The broader impact of this work extends beyond photonics, influencing research in other wave dynamics disciplines, including microwave and acoustics., Competing Interests: Disclosures. Authors declare no conflicts of interest.

Optical equalization can be used for chromatic dispersion compensation in optical communication systems to improve the system performance; however, optical signal processing (OSP) is generally specifically designed for transmission channels, that is non-adaptive to dynamic transmission distortions compared with digital signal processing (DSP). In this contribution, we demonstrate optical equalization using a photonic integrated circuit (PIC) filter for chromatic dispersion compensation, with static and adaptive techniques: (a) the static optical equalizer is calibrated based on the known fiber dispersion and length, by using the fractional delay reference method; (b) the adaptive optical equalizer is updated iteratively to compensate transmission impairments based on a least-mean squares (LMS) algorithm. Experimental results show that both the static optical equalizer and the adaptive optical LMS equalizer can give an 18-dB Q-factor for a 14-Gbd QPSK signal transmitting over 30 km. To highlight the capability of the optical equalizers, we use simulations to show the improvement in dispersion compensating characteristics by implementing additional taps.

The use of composite materials has seen widespread adoption in modern aerospace industry. This has been facilitated due to their favourable mechanical characteristics, namely, low weight and high stiffness and strength. For broader implementation of those materials though, the out-of-autoclave production processes have to be optimized, to allow for higher reliability of the parts produced as well as cost reduction and improved production speed. This optimization can be achieved by monitoring and controlling resin filling and curing cycles. Photonic Integrated Circuits (PICs), and, in particular, Silicon Photonics, owing to their fast response, small size, ability to operate at higher temperatures, immunity to electromagnetic interference, and compatibility with CMOS fabrication techniques, can offer sensing solutions fulfilling the requirements for composite material production using carbon fibres. In this paper, we demonstrate a passive optical temperature sensor, based on a 220 nm height Silicon-on-Insulator platform, embedded in a composite tool used for producing RTM-6 composite parts of high quality (for use in the aerospace industry). The design methodology of the photonic circuit as well as the experimental results and comparison with the industry standard thermocouples during a thermal cycling of the tool are presented. The optical sensor exhibits high sensitivity (85 pm/°C), high linearity (R 2 = 0.944), and is compatible with the RTM-6 production process, operating up to 180 °C.

A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92° beamwidth, 15.3° grating-lobe-free steering range, and 12 dB sidelobe level. Based on a reverse biased p-i-n structure, component phase modulators are 3 mm long with DC power consumption of less than 5 µW and greater than 770 MHz electro-optical bandwidth. Separately fabricated 4-mm-long phase modulators based on the same structure demonstrate single-sided V π ·L modulation efficiency ranging from 0.5 V·cm to 1.22 V·cm when tested at wavelengths from 980 nm to 1360 nm.

In this work, we report the realization of a polarization-insensitive grating coupler, single-mode waveguide, and ring resonator in the GaN-on-sapphire platform. We provide a detailed demonstration of the material characterization, device simulation, and experimental results. We achieve a grating coupler efficiency of -5.2 dB/coupler with a 1 dB and 3 dB bandwidth of 40 nm and 80 nm, respectively. We measure a single-mode waveguide loss of -6 dB/cm. The losses measured here are the lowest in a GaN-on-sapphire photonic circuit. This demonstration provides opportunities for the development of on-chip linear and non-linear optical processes using the GaN-on-sapphire platform. To the best of our knowledge, this is the first demonstration of an integrated photonic device using a GaN HEMT stack with 2D electron gas.

In this paper, a reconfigurable photonic integrated circuit that can produce various resonances is proposed and demonstrated. Particularly, it can generate a high performance Fano resonance with an ultra-wide free-spectral range. Moreover, the extinction ratio, slope rate, and center wavelength of the Fano resonance are tunable using integrated phase shifters. This work paves the way towards a variety of new applications, including low threshold lasers, low power consumption modulators, and high sensitivity sensors.

Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for optical feedback and mode selection resulting in laser self-injection locking with narrow emission linewidth. Multiple group III-nitride (III-N) based photonic integrated circuit chips with different waveguide designs including single-crystalline AlN, AlGaN, and GaN were developed and characterized. Single-frequency laser operation was demonstrated for all studied waveguide core materials. The best side-mode suppression ratio was determined to be ∼36 dB at 412 nm with a single-frequency laser emission linewidth of only 3.8 MHz at 461 nm. The performance metrics of this novel, to the best of our knowledge, type of laser suggest potential implementation in next-generation, portable quantum systems.

This work presents the performance analysis of a passive optical network (PON) proposal with photonic integrated circuits (PIC). The PON architecture was simulated on MATLAB, focusing on the main functionalities of the optical line terminal, distribution network, and network unity regarded its effects on the physical layer. We show a simulated PIC, implemented on MATLAB through its analytic transfer function equation, used to implement orthogonal frequency division multiplexing in the optical domain to enhance the current optical networks for the 5G New-Radio (NR) scenario. We analyzed the OOK and optical PAM4 compared with phase modulation formats such as the DPSK and DQPSK. All modulation formats can be directly detected for the case in the study, simplifying the reception. Consequently, this work achieved a maximum symmetric transmission capacity of 1.2 Tbps over 90 km of standard single-mode fiber with 128 carriers, 64 carriers for downstream and 64 for upstream, obtained from an optical frequency comb with 0.3 dB flatness. We concluded that phase modulation formats associated with PIC could increase PON capability and push further our current scenario to the 5G new era.

The heterogeneous integration of a GaN-based photonic integrated circuit (PIC) and an Si-based transimpedance amplifier (TIA) is demonstrated in this work. The monolithic GaN PIC, fabricated from a GaN-on-Si light-emitting diode (LED) wafer, comprises LEDs whose optical outputs are coupled to photodetectors (PD) through suspended waveguides. The PIC chip is mounted onto a printed circuit board together with a TIA chip and two filter chip capacitors, occupying a compact footprint. The components are interconnected directly using wire-bonds to minimize signal delays and attenuation. The integrated system achieves rise and fall times of 2.21 and 2.10 ns, respectively, a transmission delay of 3.54 ns, and a bandwidth exceeding 390 MHz. Transmission of a pseudorandom binary sequence-3 (PRBS-3) signal across the integrated system is also demonstrated at the data transmission rate of 280 Mbit/s with a clearly resolved open eye diagram.

The traditional photonic integrated circuit (PIC) inherits the mature CMOS fabrication process from the electronic integrated circuit (IC) industry. However, this process also limits the PIC structure to a single-waveguide-layer configuration. In this work, we explore the possibility of the multi-waveguide-layer PIC by proposing and demonstrating a 3D optical phased array (OPA) device, with the light exiting from the edge of the device, based on multi-layer Si 3 N 4 /SiO 2 stacks. This device is in a multi-waveguide-layer configuration at every single position of the device. This configuration offers the possibility of using edge couplers at both the input and the emitting ends to achieve broadband high efficiency, and its uniqueness provides the potential for a more extended detection range in the lidar application. The device has been studied by numerical simulation, and proof-of-concept samples have been fabricated and tested.

The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma-reactive ion etching in chlorine, followed by wet etching in tetramethylammonium hydroxide (TMAH). For the dry etching stage, an optimized procedure was used. For the wet etching step, the TMAH temperature was set to a constant value of 80 °C, and the only variable parameter was time. The time was divided into individual steps, each of 20 min. To validate the results, electro-optical parameters were measured after each step and compared with a cleaved reference, as well as with scanning electron microscope imaging of the front surface. It was determined that the optimal wet etching time was 40 min. For this time, the laser tested achieved a fully comparable threshold current (within 10%) with the cleaved reference. The described technology is an important step for the future manufacturing of photonic integrated circuits with laser diodes integrated on a chip and for ultra-short-cavity lasers.

The accurate calibration of large-scale switch networks is critical for integrated photonics, in which the integrated optical true time delay chip is typical. In this work, a novel self-calibration method without extra testing ports is proposed by introducing lossless thermo-optic phase shifters instead to calibrate the network. As a demonstration, a 5-bit delay line based on silicon nitride is fabricated and calibrated. The extinction ratio of all the switches is greater than 30.9 dB at the cross and bar states. Using this method, the 5-bit optical delay line which can be tuned in a range of 118.53 ps and reach a low delay time deviation less than ±0.4 ps.

The extreme miniaturization of a cold-atom interferometer accelerometer requires the development of novel technologies and architectures for the interferometer subsystems. Here, we describe several component technologies and a laser system architecture to enable a path to such miniaturization. We developed a custom, compact titanium vacuum package containing a microfabricated grating chip for a tetrahedral grating magneto-optical trap (GMOT) using a single cooling beam. In addition, we designed a multi-channel photonic-integrated-circuit-compatible laser system implemented with a single seed laser and single sideband modulators in a time-multiplexed manner, reducing the number of optical channels connected to the sensor head. In a compact sensor head containing the vacuum package, sub-Doppler cooling in the GMOT produces 15 μK temperatures, and the GMOT can operate at a 20 Hz data rate. We validated the atomic coherence with Ramsey interferometry using microwave spectroscopy, then demonstrated a light-pulse atom interferometer in a gravimeter configuration for a 10 Hz measurement data rate and T = 0-4.5 ms interrogation time, resulting in Δg/g = 2.0 × 10 -6 . This work represents a significant step towards deployable cold-atom inertial sensors under large amplitude motional dynamics., (© 2022. This is a U.S. Government work and not under copyright protection in the US; foreign copyright protection may apply.)

A low-cost, multi-function fiber-optic sensing system is highly desirable for physical security monitoring. Using the silicon photonic integrated circuit technology, we propose and demonstrate a compact fiber-optic sensing system which can simultaneously measure the temperature and strain information. A key enabler of the proposed system is an on-chip optical interrogator consisting of a two-dimensional grating coupler, four microring resonators, and four on-chip photodetectors. The interrogator conveys the temperature and strain information via measuring the center wavelength of a fiber Bragg grating and the polarization state of back-reflected light through a single-mode fiber.

Erbium-doped fiber amplifiers revolutionized long-haul optical communications and laser technology. Erbium ions could provide a basis for efficient optical amplification in photonic integrated circuits but their use remains impractical as a result of insufficient output power. We demonstrate a photonic integrated circuit-based erbium amplifier reaching 145 milliwatts of output power and more than 30 decibels of small-signal gain-on par with commercial fiber amplifiers and surpassing state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. We apply ion implantation to ultralow-loss silicon nitride (Si 3 N 4 ) photonic integrated circuits, which are able to increase the soliton microcomb output power by 100 times, achieving power requirements for low-noise photonic microwave generation and wavelength-division multiplexing optical communications. Endowing Si 3 N 4 photonic integrated circuits with gain enables the miniaturization of various fiber-based devices such as high-pulse-energy femtosecond mode-locked lasers.

We demonstrate a monolithically integrated photonic integrated circuit (PIC) for terahertz spectroscopy with wide spectral bandwidth. The PIC includes two widely tunable sampled grating DBR (SG DBR) lasers, semiconductor optical amplifiers (SOAs), and passive components to combine signals. The SG DBR lasers cover 22 nm and 24 nm tuning range, respectively, with 4 nm overlap in the C band. The side mode suppression ratio (SMSR) exceeds 37 dB with a linewidth below 4.3 MHz. We used the PIC to generate THz radiation with a state-of-the-art photodiode emitter. The measured THz power spectrum between 0.03 and 1 THz compares well with the spectrum generated with commercial tunable laser sources. This demonstrates the suitability of our PIC for future miniaturized continuous wave (cw) THz systems.

Label-free direct-optical biosensors such as surface-plasmon resonance (SPR) spectroscopy has become a gold standard in biochemical analytics in centralized laboratories. Biosensors based on photonic integrated circuits (PIC) are based on the same physical sensing mechanism: evanescent field sensing. PIC-based biosensors can play an important role in healthcare, especially for point-of-care diagnostics, if challenges for a transfer from research laboratory to industrial applications can be overcome. Research is at this threshold, which presents a great opportunity for innovative on-site analyses in the health and environmental sectors. A deeper understanding of the innovative PIC technology is possible by comparing it with the well-established SPR spectroscopy. In this work, we shortly introduce both technologies and reveal similarities and differences. Further, we review some latest advances and compare both technologies in terms of surface functionalization and sensor performance.

The segmented planar imager is an advanced optical interferometric telescope with a photonic integrated circuit (PIC). It provides a significant reduction in size, weight, and power consumption as compared to traditional optical interferometry. In this article, we propose the combination of a single PIC with a two-dimensional (2D) lens array to achieve single-PIC imaging. Unlike previous designs which require a large number of PIC arrangements in different directions for imaging, a single-PIC imaging system requires only one PIC for 2D frequency domain sampling and imaging. In addition, the single-PIC imaging system can form a larger equivalent aperture through modularization. Since PIC can be mass-produced, the modularization ability of the single-PIC imaging system greatly shortens the production and development cycle of large-aperture telescopes.

In this work, we present a significant step toward in vivo ophthalmic optical coherence tomography and angiography on a photonic integrated chip. The diffraction gratings used in spectral-domain optical coherence tomography can be replaced by photonic integrated circuits comprising an arrayed waveguide grating. Two arrayed waveguide grating designs with 256 channels were tested, which enabled the first chip-based optical coherence tomography and angiography in vivo three-dimensional human retinal measurements. Design 1 supports a bandwidth of 22 nm, with which a sensitivity of up to 91 dB (830 µW) and an axial resolution of 10.7 µm was measured. Design 2 supports a bandwidth of 48 nm, with which a sensitivity of 90 dB (480 µW) and an axial resolution of 6.5 µm was measured. The silicon nitride-based integrated optical waveguides were fabricated with a fully CMOS-compatible process, which allows their monolithic co-integration on top of an optoelectronic silicon chip. As a benchmark for chip-based optical coherence tomography, tomograms generated by a commercially available clinical spectral-domain optical coherence tomography system were compared to those acquired with on-chip gratings. The similarities in the tomograms demonstrate the significant clinical potential for further integration of optical coherence tomography on a chip system.

Photonic integrated circuits (PIC) provide promising functionalities to significantly reduce the size and costs of optical coherence tomography (OCT) systems. This paper presents an imaging platform operating at a center wavelength of 830 nm for ophthalmic application using PIC-based swept source OCT. An on-chip Mach-Zehnder interferometer (MZI) configuration, which comprises an input power splitter, polarization beam splitters in the sample and the reference arm, and a 50/50 coupler for signal interference represents the core element of the system with a footprint of only [Formula: see text]. The system achieves 94 dB imaging sensitivity with 750 [Formula: see text]W on the sample, 50 kHz imaging speed and 5.5 [Formula: see text]m axial resolution (in soft tissue). With this setup, in vivo human retinal imaging of healthy subjects was performed producing B-scans, three-dimensional renderings as well as OCT angiography. These promising results are significant prerequisites for further integration of optical and electronic building blocks on a single swept source-OCT PIC., (© 2021. The Author(s).)

A photonic integrated circuit (PIC) comprised of an 11 cm long multimode speckle waveguide, a 1 × 32 splitter, and a linear grating coupler array is fabricated and utilized to receive 2 GHz of radio-frequency (RF) signal bandwidth from 2.5 to 4.5 GHz using compressive sensing (CS). Incoming RF signals are modulated onto chirped optical pulses which are input to the multimode waveguide. The multimode waveguide produces the random projections needed for CS via optical speckle. The time-varying phase and amplitude of two test RF signals between 2.5 and 4.5 GHz are successfully recovered using the standard penalized l1-norm method. The PIC reduces the speckle mixer footprint compared with the previously demonstrated fiber system. Two new PIC structures, the "waveguide bus trombone flare" and the "matched 90 degree bus bend" are developed to support precise analog signal routing. The use of a passive PIC serves as an initial critical step towards the miniaturization of a compressive sensing RF receiver.

We demonstrate an on-chip silicon-on-insulator (SOI) device to generate a non-diffracting beam of ≈850 µm length from a diffractive axicon-like lens etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The device consists of circular gratings with seven stages of 1x2 multimode interferometers. We present a technique to apodize the gratings azimuthally by breaking up the circles into arcs which successfully increased the penetration depth in the gratings from ≈5 µm to ≈60 µm. We characterize the device's performance by coupling 1300±50 nm swept source laser in to the chip from the axicon and measuring the out-coupled light from a grating coupler. Further, we also present the implementation of balanced homodyne detection method for the spectral characterization of the device and show that the position of the output lobe of the axicon does not change significantly with wavelength.

We demonstrate an ultra-sensitive waveguide-enhanced Raman sensor for low concentration organic compounds dissolved in water. The spectra are obtained using silicon nitride slot waveguides coated with a thin film of hexamethyldisilazane-modified mesoporous silica. Enriched locally by 600-fold within the coating, a micromolar level of cyclohexanone is probed. The sensor is also capable of simultaneous quantification of multiple analytes, and the adsorbed analytes can be completely released from the coating. These properties make this on-chip Raman sensor promising for diverse applications, especially for the monitoring of non-polar organics and biomolecules in aqueous environments.

The quantum cascade laser is a powerful solid-state source of terahertz-frequency radiation. However, integrating multiple photonic functions into a monolithic platform in this frequency range is non-trivial due to the scaling of photonic structures for the long terahertz wavelengths and the low frequency tuning coefficients of the quantum cascade lasers. Here, we have designed a simple terahertz-frequency photonic integrated circuit by coupling a racetrack resonator with a ridge laser in the longitudinal direction to design a notch filter. The transmission properties of this filter structure are dependent on the phase matching and losses in the coupled racetrack and results in a comb of stopband frequencies. We have optimized the comb separation by carefully selecting the cavity dimensions of the racetrack resonator to suppress longitudinal modes in the ridge laser enabling single-mode emission. The emission frequencies and output power from laser are controlled through appropriate control of drive currents to the ridge and the racetrack resonator. The emission frequency is electrically tuned over ∼81 GHz exploiting Stark shift of the gain as a function of drive current at the ridge laser, coinciding with an output power variation of ∼27% of the peak power (at a heat sink temperature of 50 K). The output power from the ridge also varied by ∼30% and the frequency was tuned by a further 10 GHz when the driving conditions at the ridge laser are invariant and the current at the racetrack resonator was varied. To our best knowledge, this is the first report of a frequency engineering, tuning and power modulation of terahertz-frequency quantum cascade lasers using a photonic integrated circuit.

An integrated Stokes vector receiver (SVR) that can retrieve state of polarization of light in the three-dimensional (3D) Stokes space has widespread applications, such as short-reach communication links, polarization-sensitive imaging, and sensing. While various approaches have been demonstrated to date, monolithic integration of polarization components on InP has been a challenging issue. In this paper, we develop a novel 4-port SVR circuit integrated on a compact InP chip to retrieve complete Stokes parameters of incoming light with various intensity and degree-of-polarization. By judiciously designing the lengths and positions of asymmetric waveguide sections, we demonstrate that the SV of signal can be projected onto four vertices of a regular tetrahedron inscribed in the Poincaré sphere. Additionally, we employ this device in decoding 10-Gbaud 4-ary and 8-ary Stokes-vector-modulated signals in the 3D Stokes space.

Photonic reservoir computing is a new paradigm for performing high-speed prediction and classification tasks in an efficient manner. The major challenge for the miniaturization of photonic reservoir computing is the need for the use of photonic integrated circuits. Herein, we experimentally demonstrate reservoir computing using a photonic integrated circuit with a semiconductor laser and a short external cavity. We propose a method to increase the number of virtual nodes in delayed feedback using short node intervals and outputs from multiple delay times. We perform time-series prediction and nonlinear channel equalization tasks using reservoir computing with the photonic integrated circuit. We show that the photonic integrated circuit with optical feedback outperforms the photonic integrated circuit without optical feedback for prediction tasks. To enhance the memory effect we feed past input signals in the current input data and demonstrate successful performance in an n-step-ahead prediction task.

This Letter presents an optical mode transition structure for use in Si 3 N 4 / LiNbO 3 -based hybrid photonics. A gradual modal transition from a Si 3 N 4 waveguide to a hybrid Si 3 N 4 / LiNbO 3 waveguide is achieved by etching a terrace structure into the sub-micrometer thick LiNbO 3 film. The etched film is then bonded to predefined low pressure chemical vapor deposition Si 3 N 4 waveguides. Herein we analyze hybrid optical devices both with and without the aforementioned mode transition terrace structure. Experimental and simulated results indicate that inclusion of the terrace significantly improves mode transition compared to an abrupt transition, i.e., a 1.78 dB lower mode transition loss compared to the abrupt transition. The proposed transition structure is also applied to the design of hybrid Si 3 N 4 - LiNbO 3 micro-ring resonators. A high-quality factor (Q) resonator is demonstrated with the terrace transition which mitigates undesired resonances.

We report on the heterogeneous integration of electrically pumped InP Fabry-Pérot lasers on a SOI photonic integrated circuit by transfer printing. Transfer printing is a promising micromanipulation technique that allows the heterogeneous integration of optical and electronic components realized on their native substrate onto a target substrate with efficient use of the source material, in a way that can be scaled to parallel manipulation and that allows mixing components from different sources onto the same target. We pre-process transfer printable etched facet Fabry-Pérot lasers on their native InP substrate, transfer print them into a trench defined in an SOI photonic chip and post-process the printed lasers on the target substrate. The laser facet is successfully butt-coupled to the photonic circuit using a silicon inverse taper based spot size converter. Milliwatt optical output power coupled to the Si waveguide circuit at 100 mA is demonstrated.

We propose and demonstrate a monolithically integrated mode division multiplexing (MDM) photonic system for parallel radio-frequency (RF) signal processing using a silicon platform. Two independent lowpass integrated microwave photonic filters (IMPFs) are successfully demonstrated using the proposed scheme. Full integration of active and passive devices ensures small footprint and good performance for microwave photonic applications. The adoption of MDM extends the parallel processing capability of a single wavelength line. The first order transverse electric (TE 1 ) and second order transverse electric (TE 2 ) modes are utilized for two IMPFs, with minimum bandwidth 3.7 and 3.8 GHz, respectively. Furthermore, by elaborately controlling the micro-ring based mode convertors, the continuous tuning of bandwidth is achieved from 3.7 to 8 GHz for TE 1 and 3.8 to 7.6 GHz for TE 2 based IMPFs.

We report for the first time the successful wavelength stabilization of two hybrid integrated InP/Polymer DBR lasers through optical injection. The two InP/Polymer DBR lasers are integrated into a photonic integrated circuit, providing an ideal source for millimeter and Terahertz wave generation by optical heterodyne technique. These lasers offer the widest tuning range of the carrier wave demonstrated to date up into the Terahertz range, about 20 nm (2.5 THz) on a single photonic integrated circuit. We demonstrate the application of this source to generate a carrier wave at 330 GHz to establish a wireless data transmission link at a data rate up to 18 Gbit/s. Using a coherent detection scheme we increase the sensitivity by more than 10 dB over direct detection.

We demonstrate an optical distance sensor integrated on a silicon photonic chip with a footprint of well below 1 mm 2 . The integrated system comprises a heterodyne receiver structure with tunable power splitting ratio and on-chip photodetectors. The functionality of the device is demonstrated in a synthetic-wavelength interferometry experiment using frequency combs as optical sources. We obtain accurate and fast distance measurements with an unambiguity range of 3.75 mm, a root-mean-square error of 3.4 µm and acquisition times of 14 µs.

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

We report a photonic integrated circuit implementation of an optical clock multiplier, or equivalently an optical frequency comb filter. The circuit comprises a novel topology of a ring-resonator-assisted asymmetrical Mach-Zehnder interferometer in a Sagnac loop, providing a reconfigurable comb filter with sub-GHz selectivity and low complexity. A proof-of-concept device is fabricated in a high-index-contrast stoichiometric silicon nitride (Si 3 N 4 /SiO 2 ) waveguide, featuring low loss, small size, and large bandwidth. In the experiment, we show a very narrow passband for filters of this kind, i.e. a -3-dB bandwidth of 0.6 GHz and a -20-dB passband of 1.2 GHz at a frequency interval of 12.5 GHz. As an application example, this particular filter shape enables successful demonstrations of five-fold repetition rate multiplication of optical clock signals, i.e. from 2.5 Gpulses/s to 12.5 Gpulses/s and from 10 Gpulses/s to 50 Gpulses/s. This work addresses comb spectrum processing on an integrated platform, pointing towards a device-compact solution for optical clock multipliers (frequency comb filters) which have diverse applications ranging from photonic-based RF spectrum scanners and photonic radars to GHz-granularity WDM switches and LIDARs.

We demonstrate a large-scale tunable-coupling ring resonator array, suitable for high-dimensional classical and quantum transforms, in a CMOS-compatible silicon photonics platform. The device consists of a waveguide coupled to 15 ring-based dispersive elements with programmable linewidths and resonance frequencies. The ability to control both quality factor and frequency of each ring provides an unprecedented 30 degrees of freedom in dispersion control on a single spatial channel. This programmable dispersion control system has a range of applications, including mode-locked lasers, quantum key distribution, and photon-pair generation. We also propose a novel application enabled by this circuit - high-speed quantum communications using temporal-mode-based quantum data locking - and discuss the utility of the system for performing the high-dimensional unitary optical transformations necessary for a quantum data locking demonstration.

The mid-infrared (2.5 < λ < 25 μm) spectral region is utilized for many purposes, such as chemical/biological sensing, free space communications, and illuminators/countermeasures. Compared to near-infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality. In this manuscript, we make a significant leap forward in mid-infrared technology by developing a platform which can combine functions of multiple mid-infrared optical elements, including an integrated light source. In a single device, we demonstrate wide wavelength tuning (240 nm) and beam steering (17.9 degrees) in the mid-infrared with a significantly reduced beam divergence (down to 0.5 degrees). The architecture is also set up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirror coating to function.

This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work within a heterodyne optical phase locked loop (OPLL). The PIC and an external electronic circuit were used to phase-lock a single-line semiconductor laser diode to an incoming reference laser, with tuneable frequency offset from 4 GHz to 12 GHz. The PIC contains 33 active and passive components monolithically integrated on a single chip, fully demonstrating the capability of a generic foundry PIC fabrication model. The electronic part of the OPLL consists of commercially available RF components. This semi-packaged system stabilizes the phase and frequency of the integrated laser so that an absolute frequency, high-purity heterodyne signal can be generated when the OPLL is in operation, with phase noise lower than -100 dBc/Hz at 10 kHz offset from the carrier. This is the lowest phase noise level ever demonstrated by monolithically integrated OPLLs.

This Letter presents a photonics-based millimeter wave and terahertz frequency synthesizer using a monolithic InP photonic integrated circuit composed of a mode-locked laser (MLL) and two pulse interleaver stages to multiply the repetition rate frequency. The MLL is a multiple colliding pulse MLL producing an 80 GHz repetition rate pulse train. Through two consecutive monolithic pulse interleaver structures, each doubling the repetition rate, we demonstrate the achievement of 160 and 320 GHz. The fabrication was done on a multi-project wafer run of a generic InP photonic technology platform.

Random number generators are essential for applications in information security and numerical simulations. Most optical-chaos-based random number generators produce random bit sequences by offline post-processing with large optical components. We demonstrate a real-time hardware implementation of a fast physical random number generator with a photonic integrated circuit and a field programmable gate array (FPGA) electronic board. We generate 1-Tbit random bit sequences and evaluate their statistical randomness using NIST Special Publication 800-22 and TestU01. All of the BigCrush tests in TestU01 are passed using 410-Gbit random bit sequences. A maximum real-time generation rate of 21.1 Gb/s is achieved for random bit sequences in binary format stored in a computer, which can be directly used for applications involving secret keys in cryptography and random seeds in large-scale numerical simulations.

Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7 × 7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing switching is demonstrated successfully. Bit error rate performance below 10 -9 is obtained for all spatial channels with low power penalty. The proposed design can be easily upgraded to reconfigurable optical add/drop multiplexer capable of switching several multicore fibers.

We demonstrate and compare two different photonic-based signal sources for generating the carrier wave in a wireless communication link operating in the millimeter-wave range. The first signal source uses the optical heterodyne technique to generate a 113 GHz carrier wave frequency, while the second employs a different technique based on a pulsed mode-locked source with 100 GHz repetition rate frequency. The two optical sources were fabricated in a multi-project wafer run from an active/passive generic integration platform process using standardized building blocks, including multimode interference reflectors which allow us to define the structures on chip, without the need for cleaved facet mirrors. We highlight the superior performance of the mode-locked sources over an optical heterodyne technique. Error-free transmission was achieved in this experiment.

Topological edge states in a photonic integrated circuit based on the platform of silicon nitride are demonstrated with a two-dimensional coupled resonator optical waveguide array involving the synthetic magnetic field for photons at near-infrared wavelengths. Measurements indicate that the topological edge states can be observed at certain wavelengths, with light travelling around the boundary of the array. Combined with the induced disorders in fabrication near the edge, the system shows the defect immunity under the topological protection of edge states.

Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 µm wavelength range are demonstrated. The devices consist of a "W"-shaped InGaAs/GaAsSb multi-quantum-well gain section, III-V/silicon spot size converters and two silicon Bragg grating reflectors to form the laser cavity. In continuous-wave (CW) operation, we obtain a threshold current density of 2.7 kA/cm 2 and output power of 1.3 mW at 5 °C for 2.35 μm lasers. The lasers emit over 3.7 mW of peak power with a threshold current density of 1.6 kA/cm 2 in pulsed regime at room temperature. This demonstration of heterogeneously integrated lasers indicates that the material system and heterogeneous integration method are promising to realize fully integrated III-V/silicon photonics spectroscopic sensors in the 2 µm wavelength range.

We propose and fabricate an on-chip mode division multiplexed (MDM) photonic interconnection system. Such a monolithically photonic integrated circuit (PIC) is composed of a grating coupler, two micro-ring modulators, mode multiplexer/demultiplexer, and two germanium photodetectors. The signals' generation, multiplexing, transmission, demultiplexing, and detection are successfully demonstrated on the same chip. Twenty Gb/s MDM signals are successfully processed with clear and open eye diagrams, validating the feasibility of the proposed circuit. The measured power penalties show a good performance of the MDM link. The proposed on-chip MDM system can be potentially used for large-capacity optical interconnection in future high-performance computers and big data centers.

In this article we describe a cost-effective approach for hybrid laser integration, in which vertical cavity surface emitting lasers (VCSELs) are passively-aligned and flip-chip bonded to a Si photonic integrated circuit (PIC), with a tilt-angle optimized for optical-insertion into standard grating-couplers. A tilt-angle of 10° is achieved by controlling the reflow of the solder ball deposition used for the electrical-contacting and mechanical-bonding of the VCSEL to the PIC. After flip-chip integration, the VCSEL-to-PIC insertion loss is -11.8 dB, indicating an excess coupling penalty of -5.9 dB, compared to Fibre-to-PIC coupling. Finite difference time domain simulations indicate that the penalty arises from the relatively poor match between the VCSEL mode and the grating-coupler.

A flexible monitor suitable for the discrimination of on-chip transmitted mode division multiplexed (MDM) and wavelength division multiplexed (WDM) signals is proposed and fabricated. By selectively extracting part of the incoming signals through the tunable wavelength and mode dependent drop filter, the in-line and switchable monitor can discriminate the wavelength, mode and power information of the transmitted signals. Being different from a conventional mode and wavelength demultiplexer, the monitor is specifically designed to ensure a flexible in-line monitoring. For demonstration, three mode and three wavelength multiplexed signals are successfully processed. Assisted by the integrated photodetectors (PDs), both the measured photo currents and eye diagrams validate the performance of the proposed device. The bit error ratio (BER) measurement results show less than 0.4 dB power penalty between different modes and ~2 dB power penalty for single wavelength and WDM cases under 10 -9 BER level.

Orbital angular momentum (OAM) state of photons offer an attractive additional degree of freedom that has found a variety of applications. Measurement of OAM state, which is a critical task of these applications, demands photonic integrated devices for improved fidelity, miniaturization, and reconfiguration. Here we report the design of a silicon-integrated OAM receiver that is capable of detecting distinct and variable OAM states. Furthermore, the reconfiguration capability of the detector is achieved by applying voltage to the GeSe film to form gratings with alternate states. The resonant wavelength for arbitrary OAM state is demonstrated to be tunable in a quasi-linear manner through adjusting the duty cycle of the gratings. This work provides a viable approach for the realization of a compact integrated OAM detection device with enhanced functionality that may find important applications in optical communications and information processing with OAM states.