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This study presents the simulation, fabrication and characterization ofmicromechanical radio frequency (RF) switch with micro inductors. The inductors areemployed to enhance the characteristic of the RF switch. An equivalent circuit model isdeveloped to simulate the performance of the RF switch. The behaviors of themicromechanical RF switch are simulated by the finite element method software,CoventorWare. The micromechanical RF switch is fabricated using the complementarymetal oxide semiconductor (CMOS) and a post-process. The post-process employs a wetetching to etch the sacrificial layer, and to release the suspended structures of the RF switch.The structure of the RF switch contains a coplanar waveguide (CPW), a suspendedmembrane, eight springs and two inductors in series. Experimental results reveal that theinsertion loss and isolation of the switch are 1.7 dB at 21 GHz and 19 dB at 21 GHz,respectively. The driving voltage of the switch is about 13 V.