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Establishing a heterostructure is one of the adequate strategies for enhancing device performance and has been explored in sensing, and energy applications. In this study, we constructed a heterostructure through a two-step process involving hydrothermal synthesis of CuO nanostructures and subsequent spin coating on MBE-grown InGaN NRs. We found that the CuO content on the InGaN NRs has a great impact on carrier injection at the heterojunction and thus the H 2 S gas sensing performance. Popcorn CuO/InGaN NR shows excellent gas sensing performance towards different concentrations of H 2 S at room temperature. The highest response is up to 35.54% to a H 2 S concentration of 100 ppm. Even more significantly, this response is further enhanced significantly (123.70%) under 365 nm UV light. In contrast, this composite structure exhibits negligibly low responses to 100 ppm of NO 2 , H 2 , CO, and NH 3 . The heterostructure band model associated with a surface reaction model is manifested to elucidate the sensing mechanism.